On-chip chalcogenide glass waveguide-integrated mid-infrared PbTe detectors
Abstract
Here, we experimentally demonstrate an on-chip polycrystalline PbTe photoconductive detector integrated with a chalcogenide glass waveguide. The device is monolithically fabricated on silicon, operates at room-temperature, and exhibits a responsivity of 1.0 A/W at wavelengths between 2.1 and 2.5 μm.
- Authors:
-
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Materials Science and Engineering
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Materials Processing Center
- Chongqing Univ., Chongqing (China). Key Lab. of Optoelectronic Technology and System, Education Ministry of China
- Tianjin Univ., Tianjin (China). School of Precision Instruments and Optoelectronics Engineering
- Univ. of Central Florida, Orlando, FL (United States). College of Optics and Photonics, Center for Research and Education in Optics and Lasers (CREOL)
- Singapore Univ.of Technology and Design, Singapore (Singapore). Photonics Devices and Systems Group
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Materials Science and Engineering, and Materials Processing Center
- Publication Date:
- Research Org.:
- Univ. of Delaware, Newark, DE (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF); Ministry of Defense, Singapore
- OSTI Identifier:
- 1467877
- Grant/Contract Number:
- NA0002509; HDTRA1-13-1-0001
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 109; Journal Issue: 7; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 47 OTHER INSTRUMENTATION
Citation Formats
Han, Z., Singh, V., Kita, D., Monmeyran, C., Becla, P., Su, P., Li, J., Huang, X., Kimerling, L. C., Hu, J., Richardson, K., Tan, D. T. H., and Agarwal, A. On-chip chalcogenide glass waveguide-integrated mid-infrared PbTe detectors. United States: N. p., 2016.
Web. doi:10.1063/1.4961532.
Han, Z., Singh, V., Kita, D., Monmeyran, C., Becla, P., Su, P., Li, J., Huang, X., Kimerling, L. C., Hu, J., Richardson, K., Tan, D. T. H., & Agarwal, A. On-chip chalcogenide glass waveguide-integrated mid-infrared PbTe detectors. United States. https://doi.org/10.1063/1.4961532
Han, Z., Singh, V., Kita, D., Monmeyran, C., Becla, P., Su, P., Li, J., Huang, X., Kimerling, L. C., Hu, J., Richardson, K., Tan, D. T. H., and Agarwal, A. Thu .
"On-chip chalcogenide glass waveguide-integrated mid-infrared PbTe detectors". United States. https://doi.org/10.1063/1.4961532. https://www.osti.gov/servlets/purl/1467877.
@article{osti_1467877,
title = {On-chip chalcogenide glass waveguide-integrated mid-infrared PbTe detectors},
author = {Han, Z. and Singh, V. and Kita, D. and Monmeyran, C. and Becla, P. and Su, P. and Li, J. and Huang, X. and Kimerling, L. C. and Hu, J. and Richardson, K. and Tan, D. T. H. and Agarwal, A.},
abstractNote = {Here, we experimentally demonstrate an on-chip polycrystalline PbTe photoconductive detector integrated with a chalcogenide glass waveguide. The device is monolithically fabricated on silicon, operates at room-temperature, and exhibits a responsivity of 1.0 A/W at wavelengths between 2.1 and 2.5 μm.},
doi = {10.1063/1.4961532},
journal = {Applied Physics Letters},
number = 7,
volume = 109,
place = {United States},
year = {Thu Aug 18 00:00:00 EDT 2016},
month = {Thu Aug 18 00:00:00 EDT 2016}
}
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