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Title: On-chip chalcogenide glass waveguide-integrated mid-infrared PbTe detectors

Abstract

Here, we experimentally demonstrate an on-chip polycrystalline PbTe photoconductive detector integrated with a chalcogenide glass waveguide. The device is monolithically fabricated on silicon, operates at room-temperature, and exhibits a responsivity of 1.0 A/W at wavelengths between 2.1 and 2.5 μm.

Authors:
 [1];  [1];  [1]; ORCiD logo [1];  [2];  [1];  [3]; ORCiD logo [4];  [1];  [1];  [5];  [6];  [7]
  1. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Materials Science and Engineering
  2. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Materials Processing Center
  3. Chongqing Univ., Chongqing (China). Key Lab. of Optoelectronic Technology and System, Education Ministry of China
  4. Tianjin Univ., Tianjin (China). School of Precision Instruments and Optoelectronics Engineering
  5. Univ. of Central Florida, Orlando, FL (United States). College of Optics and Photonics, Center for Research and Education in Optics and Lasers (CREOL)
  6. Singapore Univ.of Technology and Design, Singapore (Singapore). Photonics Devices and Systems Group
  7. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Materials Science and Engineering, and Materials Processing Center
Publication Date:
Research Org.:
Univ. of Delaware, Newark, DE (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF); Ministry of Defense, Singapore
OSTI Identifier:
1467877
Grant/Contract Number:  
NA0002509; HDTRA1-13-1-0001
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 7; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 47 OTHER INSTRUMENTATION

Citation Formats

Han, Z., Singh, V., Kita, D., Monmeyran, C., Becla, P., Su, P., Li, J., Huang, X., Kimerling, L. C., Hu, J., Richardson, K., Tan, D. T. H., and Agarwal, A. On-chip chalcogenide glass waveguide-integrated mid-infrared PbTe detectors. United States: N. p., 2016. Web. doi:10.1063/1.4961532.
Han, Z., Singh, V., Kita, D., Monmeyran, C., Becla, P., Su, P., Li, J., Huang, X., Kimerling, L. C., Hu, J., Richardson, K., Tan, D. T. H., & Agarwal, A. On-chip chalcogenide glass waveguide-integrated mid-infrared PbTe detectors. United States. doi:10.1063/1.4961532.
Han, Z., Singh, V., Kita, D., Monmeyran, C., Becla, P., Su, P., Li, J., Huang, X., Kimerling, L. C., Hu, J., Richardson, K., Tan, D. T. H., and Agarwal, A. Thu . "On-chip chalcogenide glass waveguide-integrated mid-infrared PbTe detectors". United States. doi:10.1063/1.4961532. https://www.osti.gov/servlets/purl/1467877.
@article{osti_1467877,
title = {On-chip chalcogenide glass waveguide-integrated mid-infrared PbTe detectors},
author = {Han, Z. and Singh, V. and Kita, D. and Monmeyran, C. and Becla, P. and Su, P. and Li, J. and Huang, X. and Kimerling, L. C. and Hu, J. and Richardson, K. and Tan, D. T. H. and Agarwal, A.},
abstractNote = {Here, we experimentally demonstrate an on-chip polycrystalline PbTe photoconductive detector integrated with a chalcogenide glass waveguide. The device is monolithically fabricated on silicon, operates at room-temperature, and exhibits a responsivity of 1.0 A/W at wavelengths between 2.1 and 2.5 μm.},
doi = {10.1063/1.4961532},
journal = {Applied Physics Letters},
number = 7,
volume = 109,
place = {United States},
year = {2016},
month = {8}
}

Journal Article:
Free Publicly Available Full Text
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