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Title: Band structure characterization of WS 2 grown by chemical vapor deposition

Growth by chemical vapor deposition (CVD) leads to multilayer WS 2 of very high quality, based on high-resolution angle-resolved photoemission spectroscopy. The experimental valence band electronic structure is considered to be in good agreement with that obtained from density functional theory calculations. We find the spin-orbit splitting at the K¯ point to be 420 ± 20 meV with a hole effective mass of –0.35 ± 0.02 m e for the upper spin-orbit component (the branch closer to the Fermi level) and –0.43 ± 0.07 m e for the lower spin-orbit component. As predicted by theory, a thickness-dependent increase of bandwidth is observed at the top of the valence band, in the region of the Brillouin zone center. In conclusion, the top of the valence band of the CVD-prepared films exhibits a substantial binding energy, consistent with n-type behavior, and in agreement with transistor characteristics acquired using devices incorporating the same WS 2 material.
Authors:
 [1] ;  [2] ;  [2] ; ORCiD logo [3] ;  [1] ;  [4] ;  [5] ;  [5] ;  [2] ;  [2] ;  [2] ;  [2] ;  [2] ;  [2] ;  [2] ;  [5] ;  [3] ; ORCiD logo [1] ;  [4] ;  [2]
  1. Univ. of Nebraska, Lincoln, NE (United States)
  2. Univ. of California—Riverside, Riverside, CA (United States)
  3. Univ. of Central Florida, Orlando, FL (United States)
  4. Univ. of Minnesota, Minneapolis, MN (United States)
  5. Elettra-Sincrotrone Trieste, Trieste (Italy)
Publication Date:
Grant/Contract Number:
FG02-07ER15842
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 25; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Univ. of California, Riverside, CA (United States)
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS; WS2; band structure; majority carrier; spin-orbit coupling; effective mass
OSTI Identifier:
1467573
Alternate Identifier(s):
OSTI ID: 1258326

Tanabe, Iori, Gomez, Michael, Coley, William C., Le, Duy, Echeverria, Elena M., Stecklein, Gordon, Kandyba, Viktor, Balijepalli, Santosh K., Klee, Velveth, Nguyen, Ariana E., Preciado, Edwin, Lu, I-Hsi, Bobek, Sarah, Barroso, David, Martinez-Ta, Dominic, Barinov, Alexei, Rahman, Talat S., Dowben, Peter A., Crowell, Paul A., and Bartels, Ludwig. Band structure characterization of WS2 grown by chemical vapor deposition. United States: N. p., Web. doi:10.1063/1.4954278.
Tanabe, Iori, Gomez, Michael, Coley, William C., Le, Duy, Echeverria, Elena M., Stecklein, Gordon, Kandyba, Viktor, Balijepalli, Santosh K., Klee, Velveth, Nguyen, Ariana E., Preciado, Edwin, Lu, I-Hsi, Bobek, Sarah, Barroso, David, Martinez-Ta, Dominic, Barinov, Alexei, Rahman, Talat S., Dowben, Peter A., Crowell, Paul A., & Bartels, Ludwig. Band structure characterization of WS2 grown by chemical vapor deposition. United States. doi:10.1063/1.4954278.
Tanabe, Iori, Gomez, Michael, Coley, William C., Le, Duy, Echeverria, Elena M., Stecklein, Gordon, Kandyba, Viktor, Balijepalli, Santosh K., Klee, Velveth, Nguyen, Ariana E., Preciado, Edwin, Lu, I-Hsi, Bobek, Sarah, Barroso, David, Martinez-Ta, Dominic, Barinov, Alexei, Rahman, Talat S., Dowben, Peter A., Crowell, Paul A., and Bartels, Ludwig. 2016. "Band structure characterization of WS2 grown by chemical vapor deposition". United States. doi:10.1063/1.4954278. https://www.osti.gov/servlets/purl/1467573.
@article{osti_1467573,
title = {Band structure characterization of WS2 grown by chemical vapor deposition},
author = {Tanabe, Iori and Gomez, Michael and Coley, William C. and Le, Duy and Echeverria, Elena M. and Stecklein, Gordon and Kandyba, Viktor and Balijepalli, Santosh K. and Klee, Velveth and Nguyen, Ariana E. and Preciado, Edwin and Lu, I-Hsi and Bobek, Sarah and Barroso, David and Martinez-Ta, Dominic and Barinov, Alexei and Rahman, Talat S. and Dowben, Peter A. and Crowell, Paul A. and Bartels, Ludwig},
abstractNote = {Growth by chemical vapor deposition (CVD) leads to multilayer WS2 of very high quality, based on high-resolution angle-resolved photoemission spectroscopy. The experimental valence band electronic structure is considered to be in good agreement with that obtained from density functional theory calculations. We find the spin-orbit splitting at the K¯ point to be 420 ± 20 meV with a hole effective mass of –0.35 ± 0.02 me for the upper spin-orbit component (the branch closer to the Fermi level) and –0.43 ± 0.07 me for the lower spin-orbit component. As predicted by theory, a thickness-dependent increase of bandwidth is observed at the top of the valence band, in the region of the Brillouin zone center. In conclusion, the top of the valence band of the CVD-prepared films exhibits a substantial binding energy, consistent with n-type behavior, and in agreement with transistor characteristics acquired using devices incorporating the same WS2 material.},
doi = {10.1063/1.4954278},
journal = {Applied Physics Letters},
number = 25,
volume = 108,
place = {United States},
year = {2016},
month = {6}
}