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Title: Carrier concentration and transport in Be-doped InAsSb for infrared sensing applications

Abstract

Accurate p-type doping of the active region in III-V infrared detectors is essential for optimizing the detector design and overall performance. While most III-V detector absorbers are n-type (e.g., nBn), the minority carrier devices with p-type absorbers would be expected to have relatively higher quantum efficiencies due to the higher mobility of their constituent minority carrier electrons. However, correctly determining the hole carrier concentration in narrow bandgap InAsSb may be challenging due to the potential for electron accumulation at the surface of the material and at its interface with the layer grown directly below it. Electron accumulation layers form high conductance electron channels that can dominate both resistivity and Hall-effect transport measurements. Therefore, to correctly determine the bulk hole concentration and mobility, temperature- and magnetic-field-dependent transport measurements in conjunction with Multi-Carrier Fit analysis were utilized on a series of p-doped InAs0.91Sb0.09 samples on GaSb substrates. Finally, the resulting hole concentrations and mobilities at 77 K (300 K) were 1.6 x 1018 cm-3 (2.3 x 1018 cm-3) and 125 cm2 V-1 s-1 (60 cm2 V-1 s-1), respectively, compared with the intended Be-doping of ~2 x 1018 cm-3.

Authors:
 [1];  [2];  [2];  [2];  [3];  [4];  [2];  [5]
+ Show Author Affiliations
  1. Univ. of New Mexico (United States)
  2. Air Force Research Lab. (United States)
  3. The Univ. of New Mexico (United States)
  4. Sandia National Labs. (United States)
  5. The Ohio State Univ. (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
Air Force Research Laboratory (AFRL); USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1467457
Report Number(s):
SAND-2018-6645J
Journal ID: ISSN 0277-786X; 664460
Grant/Contract Number:  
AC04-94AL85000; NA0003525
Resource Type:
Accepted Manuscript
Journal Name:
Proceedings of SPIE - The International Society for Optical Engineering
Additional Journal Information:
Journal Volume: 10624; Journal ID: ISSN 0277-786X
Publisher:
SPIE
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; InAsSb; beryllium doping; Hall-effect measurements; magneto-transport; III-V detectors

Citation Formats

Casias, Lilian K., Morath, Christian P., Steenbergen, Elizabeth H., Webster, Preston T., Balakrishnan, Ganesh, Kim, Jin, Cowan, Vincent M., and Krishna, Sanjay. Carrier concentration and transport in Be-doped InAsSb for infrared sensing applications. United States: N. p., 2018. Web. doi:10.1117/12.2305431.
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Casias, Lilian K., Morath, Christian P., Steenbergen, Elizabeth H., Webster, Preston T., Balakrishnan, Ganesh, Kim, Jin, Cowan, Vincent M., & Krishna, Sanjay. Carrier concentration and transport in Be-doped InAsSb for infrared sensing applications. United States. https://doi.org/10.1117/12.2305431
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Casias, Lilian K., Morath, Christian P., Steenbergen, Elizabeth H., Webster, Preston T., Balakrishnan, Ganesh, Kim, Jin, Cowan, Vincent M., and Krishna, Sanjay. Mon . "Carrier concentration and transport in Be-doped InAsSb for infrared sensing applications". United States. https://doi.org/10.1117/12.2305431. https://www.osti.gov/servlets/purl/1467457.
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@article{osti_1467457,
title = {Carrier concentration and transport in Be-doped InAsSb for infrared sensing applications},
author = {Casias, Lilian K. and Morath, Christian P. and Steenbergen, Elizabeth H. and Webster, Preston T. and Balakrishnan, Ganesh and Kim, Jin and Cowan, Vincent M. and Krishna, Sanjay},
abstractNote = {Accurate p-type doping of the active region in III-V infrared detectors is essential for optimizing the detector design and overall performance. While most III-V detector absorbers are n-type (e.g., nBn), the minority carrier devices with p-type absorbers would be expected to have relatively higher quantum efficiencies due to the higher mobility of their constituent minority carrier electrons. However, correctly determining the hole carrier concentration in narrow bandgap InAsSb may be challenging due to the potential for electron accumulation at the surface of the material and at its interface with the layer grown directly below it. Electron accumulation layers form high conductance electron channels that can dominate both resistivity and Hall-effect transport measurements. Therefore, to correctly determine the bulk hole concentration and mobility, temperature- and magnetic-field-dependent transport measurements in conjunction with Multi-Carrier Fit analysis were utilized on a series of p-doped InAs0.91Sb0.09 samples on GaSb substrates. Finally, the resulting hole concentrations and mobilities at 77 K (300 K) were 1.6 x 1018 cm-3 (2.3 x 1018 cm-3) and 125 cm2 V-1 s-1 (60 cm2 V-1 s-1), respectively, compared with the intended Be-doping of ~2 x 1018 cm-3.},
doi = {10.1117/12.2305431},
journal = {Proceedings of SPIE - The International Society for Optical Engineering},
number = ,
volume = 10624,
place = {United States},
year = {Mon May 21 00:00:00 EDT 2018},
month = {Mon May 21 00:00:00 EDT 2018}
}
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Journal Article:
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https://doi.org/10.1117/12.2305431
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Figures / Tables:

Figure 1 Figure 1: Schematics of the fabricated samples in van der Pauw configuration: (a) 2-D InAsSb sample with distinct conductive paths (b) 3-D etched InAsSb sample.
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