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Title: Effects of Channel Implant Variation on Radiation-Induced Edge Leakage Currents in n-Channel MOSFETs

The effects of radiation-induced defects and statistical variation in the dose and energy of MOSFET channel implants in a modern bulk CMOS technology are modeled using a process simulator in combination with analytical computations. The model integrates doping profiles obtained from process simulations and experimentally determined defect potentials into implicit surface potential equations. Solutions to these equations are then used to model radiation-induced edge leakage currents in 90-nm bulk CMOS n-channel MOSFETs. The results indicate that slight variations in the channel implant parameters can have a significant impact on the doping profile along the shallow trench isolation sidewall and thus the radiation-induced edge leakage currents.
Authors:
ORCiD logo [1] ; ORCiD logo [2] ;  [3]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Arizona State Univ., Tempe, AZ (United States)
  3. Silvaco, Inc., Chelmsford, MA (United States)
Publication Date:
Report Number(s):
SAND2018-0525J
Journal ID: ISSN 0018-9499; 660030
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Volume: 64; Journal Issue: 8; Journal ID: ISSN 0018-9499
Publisher:
IEEE
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 97 MATHEMATICS AND COMPUTING; bulk CMOS; process variation; radiation-induced defects; radiation-induced edge leakage currents; total ionizing dose (TID); implants; semiconductor process modeling; computational modeling; mathematical model; doping profiles
OSTI Identifier:
1467000