Epitaxial strain modulated electronic properties of interface controlled nickelate superlattices

Middey, S.; Meyers, D.; Ojha, Shashank Kumar; Kareev, M.; Liu, X.; Cao, Y.; Freeland, J. W.; Chakhalian, J.

doi:10.1103/PhysRevB.98.045115

Title: Epitaxial strain modulated electronic properties of interface controlled nickelate superlattices

Journal Article · 10 July 2018 · Physical Review B

DOI: https://doi.org/10.1103/PhysRevB.98.045115 · OSTI ID:1466980

Middey, S. ^[1]; Meyers, D. ^[2]; Ojha, Shashank Kumar ^[1]; Kareev, M. ^[3]; Liu, X. ^[3]; Cao, Y. ^[3]; Freeland, J. W. ^[4]; Chakhalian, J. ^[3]

Indian Inst. of Science (IISc), Bangalore (India). Dept. of Physics
Brookhaven National Lab. (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Science Dept.
Rutgers Univ., Piscataway, NJ (United States). Dept. of Physics and Astronomy
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)

For this study, perovskite nickelate heterostructures consisting of single unit cells of EuNiO₃ and LaNiO₃ have been grown on a set of single crystalline substrates by pulsed laser interval deposition to investigate the effect of epitaxial strain on electronic and magnetic properties at the extreme interface limit. Despite the variation of substrate in-plane lattice constants and lattice symmetry, the structural response to heterostructuring is primarily controlled by the presence of the EuNiO₃ layer. In sharp contrast to bulk LaNiO₃ or EuNiO₃, the superlattices grown under tensile strains exhibit metal-to-insulator transitions (MIT) below room temperature. The onset of magnetic and electronic transitions associated with the MIT can be further separated by application of large tensile strain. Furthermore, these transitions can be entirely suppressed by very small compressive strain. X-ray resonant absorption spectroscopy measurements reveal that such strain-controlled MIT is directly linked to a strain-induced self-doping effect without any chemical doping.

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Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States); Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; Gordon and Betty Moore Foundation

Grant/Contract Number:: SC0012704; 1047478; GBMF4534; SC00012375; AC02-06CH11357

OSTI ID:: 1466980

Alternate ID(s):: OSTI ID: 1459685; OSTI ID: 1481748

Report Number(s):: BNL-208013-2018-JAAM; PRBMDO

Journal Information:: Physical Review B, Vol. 98, Issue 4; ISSN 2469-9950

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 12 works

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