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Title: Study of shot noise in photoresists for extreme ultraviolet lithography through comparative analysis of line edge roughness in electron beam and extreme ultraviolet lithography

In this paper, the influence of the absorption shot noise on line edge roughness (LER) of photoresists for extreme ultraviolet (EUV) lithography is studied experimentally through the comparative analysis of LER obtained by EUV (92 eV photons) and 100 keV e-beam lithography. Techniques for performing EUV and e-beam lithography with a matched image log slope for a fair comparison of LER values are described. Measurements of absorption of 100 keV electrons estimated through a transmissive electron energy loss spectroscopy measurement with a 120 keV electron beam showed that despite having access to core levels in the material (e.g., 284 eV edge in carbon), these electrons mostly just excite the energy levels less than 100 eV in the resist, with a mean deposited energy of 35 eV. By combining the incident flux and the absorption probabilities, the absorbed quanta for patterning of 50 nm half-pitch line/space features was found to be similar between the two patterning technologies.
Authors:
 [1] ;  [1] ;  [2]
  1. Univ. of California, Berkeley, CA (United States). Dept. of Electrical Engineering and Computer Sciences
  2. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Center for X-Ray Optics
Publication Date:
Grant/Contract Number:
AC02-05CH11231
Type:
Accepted Manuscript
Journal Name:
Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics
Additional Journal Information:
Journal Volume: 35; Journal Issue: 6; Journal ID: ISSN 2166-2746
Publisher:
American Vacuum Society/AIP
Research Org:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
OSTI Identifier:
1466709
Alternate Identifier(s):
OSTI ID: 1421080

Bhattarai, Suchit, Neureuther, Andrew R., and Naulleau, Patrick P.. Study of shot noise in photoresists for extreme ultraviolet lithography through comparative analysis of line edge roughness in electron beam and extreme ultraviolet lithography. United States: N. p., Web. doi:10.1116/1.4991054.
Bhattarai, Suchit, Neureuther, Andrew R., & Naulleau, Patrick P.. Study of shot noise in photoresists for extreme ultraviolet lithography through comparative analysis of line edge roughness in electron beam and extreme ultraviolet lithography. United States. doi:10.1116/1.4991054.
Bhattarai, Suchit, Neureuther, Andrew R., and Naulleau, Patrick P.. 2017. "Study of shot noise in photoresists for extreme ultraviolet lithography through comparative analysis of line edge roughness in electron beam and extreme ultraviolet lithography". United States. doi:10.1116/1.4991054. https://www.osti.gov/servlets/purl/1466709.
@article{osti_1466709,
title = {Study of shot noise in photoresists for extreme ultraviolet lithography through comparative analysis of line edge roughness in electron beam and extreme ultraviolet lithography},
author = {Bhattarai, Suchit and Neureuther, Andrew R. and Naulleau, Patrick P.},
abstractNote = {In this paper, the influence of the absorption shot noise on line edge roughness (LER) of photoresists for extreme ultraviolet (EUV) lithography is studied experimentally through the comparative analysis of LER obtained by EUV (92 eV photons) and 100 keV e-beam lithography. Techniques for performing EUV and e-beam lithography with a matched image log slope for a fair comparison of LER values are described. Measurements of absorption of 100 keV electrons estimated through a transmissive electron energy loss spectroscopy measurement with a 120 keV electron beam showed that despite having access to core levels in the material (e.g., 284 eV edge in carbon), these electrons mostly just excite the energy levels less than 100 eV in the resist, with a mean deposited energy of 35 eV. By combining the incident flux and the absorption probabilities, the absorbed quanta for patterning of 50 nm half-pitch line/space features was found to be similar between the two patterning technologies.},
doi = {10.1116/1.4991054},
journal = {Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics},
number = 6,
volume = 35,
place = {United States},
year = {2017},
month = {11}
}