Electron and hole contributions to normal-state transport in the superconducting system Sn1-xInxTe

Zhang, Cheng; He, Xu-Gang; Chi, Hang; Zhong, Ruidan; Ku, Wei; Gu, Genda; Tranquada, J. M.; Li, Qiang

doi:10.1103/PhysRevB.98.054503

Title: Electron and hole contributions to normal-state transport in the superconducting system ${Sn}_{1 - x} {In}_{x} Te$

Abstract

Indium-doped SnTe has been of interest because the system can exhibit both topological sur- face states and bulk superconductivity. While the enhancement of the superconducting transition temperature is established, the character of the electronic states induced by indium doping remains poorly understood. We report a study of magneto-transport in a series of Sn_1-xIn_xTe single crystals with 0:1 ≤ x ≤ 0:45. From measurements of the Hall effect, we find that the dominant carrier type changes from hole-like to electron-like at x ~ 0:25; one would expect electron-like carriers if the In ions have a valence of +3. For single crystals with x = 0:45, corresponding to the highest super- conducting transition temperature, pronounced Shubnikov-de Haas oscillations are observed in the normal state. In measurements of magnetoresistance, we nd evidence for weak anti-localization (WAL). We attribute both the quantum oscillations and the WAL to bulk Dirac-like hole pockets, previously observed in photoemission studies, which coexist with the dominant electron-like carriers.

Authors:

Zhang, Cheng ^[1]; He, Xu-Gang ^[1]; Chi, Hang ^[2]; Zhong, Ruidan ^[1]; Ku, Wei ^[2]; Gu, Genda ^[2]; Tranquada, J. M. ^[2]; Li, Qiang ^[2]

Brookhaven National Lab. (BNL), Upton, NY (United States); Stony Brook Univ., NY (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States)

Publication Date:: 2018-08-09

Research Org.:: Energy Frontier Research Centers (EFRC) (United States). Center for Emergent Superconductivity (CES); Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1466623

Alternate Identifier(s):: OSTI ID: 1463759

Report Number(s):: BNL-207980-2018-JAAM
Journal ID: ISSN 2469-9950; PRBMDO

Grant/Contract Number:: SC0012704

Resource Type:: Accepted Manuscript

Journal Name:: Physical Review B

Additional Journal Information:: Journal Volume: 98; Journal Issue: 5; Journal ID: ISSN 2469-9950

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats


                    Zhang, Cheng, He, Xu-Gang, Chi, Hang, Zhong, Ruidan, Ku, Wei, Gu, Genda, Tranquada, J. M., and Li, Qiang. Electron and hole contributions to normal-state transport in the superconducting system Sn1-xInxTe.  United States: N. p., 2018. 
Web.  doi:10.1103/PhysRevB.98.054503.

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                    Zhang, Cheng, He, Xu-Gang, Chi, Hang, Zhong, Ruidan, Ku, Wei, Gu, Genda, Tranquada, J. M., & Li, Qiang. Electron and hole contributions to normal-state transport in the superconducting system Sn1-xInxTe.  United States.  https://doi.org/10.1103/PhysRevB.98.054503

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                    Zhang, Cheng, He, Xu-Gang, Chi, Hang, Zhong, Ruidan, Ku, Wei, Gu, Genda, Tranquada, J. M., and Li, Qiang. Thu .  
"Electron and hole contributions to normal-state transport in the superconducting system Sn1-xInxTe".  United States.  https://doi.org/10.1103/PhysRevB.98.054503.  https://www.osti.gov/servlets/purl/1466623.

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@article{osti_1466623,

  title        = {Electron and hole contributions to normal-state transport in the superconducting system Sn1-xInxTe},

  author       = {Zhang, Cheng and He, Xu-Gang and Chi, Hang and Zhong, Ruidan and Ku, Wei and Gu, Genda and Tranquada, J. M. and Li, Qiang},

  abstractNote = {Indium-doped SnTe has been of interest because the system can exhibit both topological sur- face states and bulk superconductivity. While the enhancement of the superconducting transition temperature is established, the character of the electronic states induced by indium doping remains poorly understood. We report a study of magneto-transport in a series of Sn1-xInxTe single crystals with 0:1 ≤ x ≤ 0:45. From measurements of the Hall effect, we find that the dominant carrier type changes from hole-like to electron-like at x ~ 0:25; one would expect electron-like carriers if the In ions have a valence of +3. For single crystals with x = 0:45, corresponding to the highest super- conducting transition temperature, pronounced Shubnikov-de Haas oscillations are observed in the normal state. In measurements of magnetoresistance, we nd evidence for weak anti-localization (WAL). We attribute both the quantum oscillations and the WAL to bulk Dirac-like hole pockets, previously observed in photoemission studies, which coexist with the dominant electron-like carriers.},

  doi          = {10.1103/PhysRevB.98.054503},

  journal      = {Physical Review B},

  number       = 5,

  volume       = 98,

  place        = {United States},

  year         = {2018},

  month        = {8}

}

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Works referencing / citing this record:

Superconductivity of Topological Surface States and Strong Proximity Effect in Sn ₁₋ _x Pb _x Te–Pb Heterostructures
journal, November 2019

Yang, Hao; Li, Yao‐Yi; Liu, Teng‐Teng
Advanced Materials, Vol. 31, Issue 52
DOI: 10.1002/adma.201905582

Band structure engineering in Sn _1.03 Te through an In-induced resonant level
journal, January 2020

Misra, Shantanu; Wiendlocha, Bartlomiej; Tobola, Janusz
Journal of Materials Chemistry C, Vol. 8, Issue 3
DOI: 10.1039/c9tc04407h

Superconductivity of Topological Surface States and Strong Proximity Effect in Sn _1–x Pb _x Te‐Pb Heterostructures
journal, September 2020

Yang, Hao; Li, Yao‐Yi; Liu, Teng‐Teng
Advanced Materials, Vol. 32, Issue 38
DOI: 10.1002/adma.202003054

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Title: Electron and hole contributions to normal-state transport in the superconducting system Sn 1 - x In x Te

Abstract

Citation Formats

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Weak localization and antilocalization in topological insulator thin films with coherent bulk-surface coupling journal, July 2012

Quantum coherent transport in SnTe topological crystalline insulator thin films journal, September 2014

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Revealing Surface States in In-Doped SnTe Nanoplates with Low Bulk Mobility journal, May 2015

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Deep and resonance states in A<sup>IV</sup> B<sup>VI</sup> semiconductors [Глубокие и резонансные состояния в полупроводниках типа AIVBVI] journal, January 1985

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Title: Electron and hole contributions to normal-state transport in the superconducting system ${Sn}_{1 - x} {In}_{x} Te$

Observation of a topological crystalline insulator phase and topological phase transition in Pb1−xSnxTe
journal, January 2012

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journal, October 2011

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journal, March 2010

Type II superconducting parameters of Tl-doped PbTe determined from heat capacity and electronic transport measurements
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Quantum coherent transport in SnTe topological crystalline insulator thin films
journal, September 2014

The ordered crystal structure of In2Te3
journal, October 1959

Effects of Resonance Bonding on the Properties of Crystalline and Amorphous Semiconductors
journal, July 1973

Weak-Field Magnetoresistance and the Valence-Band Structure of SnTe
journal, March 1972

Time-Reversal-Invariant Topological Superconductors and Superfluids in Two and Three Dimensions
journal, May 2009

Enhanced superconducting pairing interaction in indium-doped tin telluride
journal, January 2009

Observation of surface states on heavily indium-doped SnTe(111), a superconducting topological crystalline insulator
journal, February 2016

Superconducting properties of the In-substituted topological crystalline insulator SnTe
journal, April 2013

Colloquium: Topological insulators
journal, November 2010

Experimental realization of a topological crystalline insulator in SnTe
journal, September 2012

Anomalous composition dependence of the superconductivity in In-doped SnTe
journal, January 2016

Quantum Oscillations and Hall Anomaly of Surface States in the Topological Insulator Bi₂Te₃
journal, July 2010

Spin-Orbit Interaction and Magnetoresistance in the Two Dimensional Random System
journal, February 1980

Topological Crystalline Insulators
journal, March 2011

Odd-Parity Pairing and Topological Superconductivity in a Strongly Spin-Orbit Coupled Semiconductor
journal, November 2012

Optimizing the superconducting transition temperature and upper critical field of Sn $_{1 - x}$ In $_{x}$ Te
journal, July 2013

Large bulk resistivity and surface quantum oscillations in the topological insulator ${Bi}_{2} {Te}_{2} Se$
journal, December 2010

The infrared effective charge in IV-VI compounds. I. A simple one-dimensional model
journal, November 1979

Superconducting Proximity Effect and Majorana Fermions at the Surface of a Topological Insulator
journal, March 2008

Deep and resonance states in A ^IV B ^VI semiconductors
journal, January 1985

Full-potential, linearized augmented plane wave programs for crystalline systems
journal, June 1990

Topological crystalline insulators in the SnTe material class
journal, January 2012

Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te
journal, October 2012

Impurity Effect on Weak Antilocalization in the Topological Insulator ${Bi}_{2} {Te}_{3}$
journal, April 2011

Superconductivity, pairing symmetry, and disorder in the doped topological insulator ${Sn}_{1 - x} {In}_{x} Te$ for $x \geq 0.10$
journal, January 2018

Fermiology of the Strongly Spin-Orbit Coupled Superconductor ${Sn}_{1 - x} {In}_{x} Te$ : Implications for Topological Superconductivity
journal, May 2013

Two-dimensional surface state in the quantum limit of a topological insulator
journal, November 2010

Low-energy phonons and superconductivity in ${Sn}_{0.8} {In}_{0.2} Te$
journal, February 2015

Band Structure of SnTe Studied by Photoemission Spectroscopy
journal, August 2010

Quantum oscillations in a topological insulator Bi2Te2Se with large bulk resistivity ()
journal, February 2012

Weak antilocalization in (111) thin films of a topological crystalline insulator SnTe
journal, December 2014

Revealing Surface States in In-Doped SnTe Nanoplates with Low Bulk Mobility
journal, May 2015

Enhanced surface mobility and quantum oscillations in topological insulator Bi _1.5 Sb _0.5 Te _1.7 Se _1.3 nanoflakes
journal, October 2013

Deep and resonance states in A<sup>IV</sup> B<sup>VI</sup> semiconductors [Глубокие и резонансные состояния в полупроводниках типа A^IVB^VI]
journal, January 1985

Observation of a topological crystalline insulator phase and topological phase transition in Pb1−xSnxTe
text, January 2012

Superconducting Proximity Effect and Majorana Fermions at the Surface of a Topological Insulator
journal, January 2009

Superconducting proximity effect and Majorana fermions at the surface of a topological insulator
text, January 2007

Enhanced superconducting pairing interaction in indium-doped tin telluride
text, January 2008

Topological Crystalline Insulators
text, January 2010

Weak Localization and Antilocalization in Topological Insulator Thin Films with Coherent Bulk-Surface Coupling
text, January 2012

Experimental realization of a topological crystalline insulator in SnTe
text, January 2012

Quantum Coherent Transport in SnTe Topological Crystalline Insulator Thin Films
text, January 2014

Observation of surface states on heavily indium doped SnTe(111), a superconducting topological crystalline insulator
text, January 2015

Superconductivity of Topological Surface States and Strong Proximity Effect in Sn ₁₋ _x Pb _x Te–Pb Heterostructures
journal, November 2019

Band structure engineering in Sn _1.03 Te through an In-induced resonant level
journal, January 2020

Superconductivity of Topological Surface States and Strong Proximity Effect in Sn _1–x Pb _x Te‐Pb Heterostructures
journal, September 2020