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Title: Electron and hole contributions to normal-state transport in the superconducting system Sn 1 - x In x Te

Indium-doped SnTe has been of interest because the system can exhibit both topological sur- face states and bulk superconductivity. While the enhancement of the superconducting transition temperature is established, the character of the electronic states induced by indium doping remains poorly understood. We report a study of magneto-transport in a series of Sn 1-xIn xTe single crystals with 0:1 ≤ x ≤ 0:45. From measurements of the Hall effect, we find that the dominant carrier type changes from hole-like to electron-like at x ~ 0:25; one would expect electron-like carriers if the In ions have a valence of +3. For single crystals with x = 0:45, corresponding to the highest super- conducting transition temperature, pronounced Shubnikov-de Haas oscillations are observed in the normal state. In measurements of magnetoresistance, we nd evidence for weak anti-localization (WAL). We attribute both the quantum oscillations and the WAL to bulk Dirac-like hole pockets, previously observed in photoemission studies, which coexist with the dominant electron-like carriers.
Authors:
 [1] ;  [1] ;  [2] ;  [1] ;  [2] ;  [2] ;  [2] ;  [2]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States); Stony Brook Univ., NY (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
Report Number(s):
BNL-207980-2018-JAAM
Journal ID: ISSN 2469-9950; PRBMDO
Grant/Contract Number:
SC0012704
Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 98; Journal Issue: 5; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
OSTI Identifier:
1466623
Alternate Identifier(s):
OSTI ID: 1463759

Zhang, Cheng, He, Xu-Gang, Chi, Hang, Zhong, Ruidan, Ku, Wei, Gu, Genda, Tranquada, J. M., and Li, Qiang. Electron and hole contributions to normal-state transport in the superconducting system Sn1-xInxTe. United States: N. p., Web. doi:10.1103/PhysRevB.98.054503.
Zhang, Cheng, He, Xu-Gang, Chi, Hang, Zhong, Ruidan, Ku, Wei, Gu, Genda, Tranquada, J. M., & Li, Qiang. Electron and hole contributions to normal-state transport in the superconducting system Sn1-xInxTe. United States. doi:10.1103/PhysRevB.98.054503.
Zhang, Cheng, He, Xu-Gang, Chi, Hang, Zhong, Ruidan, Ku, Wei, Gu, Genda, Tranquada, J. M., and Li, Qiang. 2018. "Electron and hole contributions to normal-state transport in the superconducting system Sn1-xInxTe". United States. doi:10.1103/PhysRevB.98.054503.
@article{osti_1466623,
title = {Electron and hole contributions to normal-state transport in the superconducting system Sn1-xInxTe},
author = {Zhang, Cheng and He, Xu-Gang and Chi, Hang and Zhong, Ruidan and Ku, Wei and Gu, Genda and Tranquada, J. M. and Li, Qiang},
abstractNote = {Indium-doped SnTe has been of interest because the system can exhibit both topological sur- face states and bulk superconductivity. While the enhancement of the superconducting transition temperature is established, the character of the electronic states induced by indium doping remains poorly understood. We report a study of magneto-transport in a series of Sn1-xInxTe single crystals with 0:1 ≤ x ≤ 0:45. From measurements of the Hall effect, we find that the dominant carrier type changes from hole-like to electron-like at x ~ 0:25; one would expect electron-like carriers if the In ions have a valence of +3. For single crystals with x = 0:45, corresponding to the highest super- conducting transition temperature, pronounced Shubnikov-de Haas oscillations are observed in the normal state. In measurements of magnetoresistance, we nd evidence for weak anti-localization (WAL). We attribute both the quantum oscillations and the WAL to bulk Dirac-like hole pockets, previously observed in photoemission studies, which coexist with the dominant electron-like carriers.},
doi = {10.1103/PhysRevB.98.054503},
journal = {Physical Review B},
number = 5,
volume = 98,
place = {United States},
year = {2018},
month = {8}
}

Works referenced in this record:

Colloquium: Topological insulators
journal, November 2010

Quantum Oscillations and Hall Anomaly of Surface States in the Topological Insulator Bi2Te3
journal, July 2010

Topological crystalline insulators in the SnTe material class
journal, January 2012
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  • Nature Communications, Vol. 3, Article No. 982
  • DOI: 10.1038/ncomms1969