skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Electron and hole contributions to normal-state transport in the superconducting system Sn 1 - x In x Te

Abstract

Indium-doped SnTe has been of interest because the system can exhibit both topological sur- face states and bulk superconductivity. While the enhancement of the superconducting transition temperature is established, the character of the electronic states induced by indium doping remains poorly understood. We report a study of magneto-transport in a series of Sn 1-xIn xTe single crystals with 0:1 ≤ x ≤ 0:45. From measurements of the Hall effect, we find that the dominant carrier type changes from hole-like to electron-like at x ~ 0:25; one would expect electron-like carriers if the In ions have a valence of +3. For single crystals with x = 0:45, corresponding to the highest super- conducting transition temperature, pronounced Shubnikov-de Haas oscillations are observed in the normal state. In measurements of magnetoresistance, we nd evidence for weak anti-localization (WAL). We attribute both the quantum oscillations and the WAL to bulk Dirac-like hole pockets, previously observed in photoemission studies, which coexist with the dominant electron-like carriers.

Authors:
 [1];  [1];  [2];  [1];  [2];  [2];  [2];  [2]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States); Stony Brook Univ., NY (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
Research Org.:
Energy Frontier Research Centers (EFRC) (United States). Center for Emergent Superconductivity (CES); Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1466623
Alternate Identifier(s):
OSTI ID: 1463759
Report Number(s):
BNL-207980-2018-JAAM
Journal ID: ISSN 2469-9950; PRBMDO
Grant/Contract Number:  
SC0012704
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 98; Journal Issue: 5; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Zhang, Cheng, He, Xu-Gang, Chi, Hang, Zhong, Ruidan, Ku, Wei, Gu, Genda, Tranquada, J. M., and Li, Qiang. Electron and hole contributions to normal-state transport in the superconducting system Sn1-xInxTe. United States: N. p., 2018. Web. doi:10.1103/PhysRevB.98.054503.
Zhang, Cheng, He, Xu-Gang, Chi, Hang, Zhong, Ruidan, Ku, Wei, Gu, Genda, Tranquada, J. M., & Li, Qiang. Electron and hole contributions to normal-state transport in the superconducting system Sn1-xInxTe. United States. doi:10.1103/PhysRevB.98.054503.
Zhang, Cheng, He, Xu-Gang, Chi, Hang, Zhong, Ruidan, Ku, Wei, Gu, Genda, Tranquada, J. M., and Li, Qiang. Thu . "Electron and hole contributions to normal-state transport in the superconducting system Sn1-xInxTe". United States. doi:10.1103/PhysRevB.98.054503. https://www.osti.gov/servlets/purl/1466623.
@article{osti_1466623,
title = {Electron and hole contributions to normal-state transport in the superconducting system Sn1-xInxTe},
author = {Zhang, Cheng and He, Xu-Gang and Chi, Hang and Zhong, Ruidan and Ku, Wei and Gu, Genda and Tranquada, J. M. and Li, Qiang},
abstractNote = {Indium-doped SnTe has been of interest because the system can exhibit both topological sur- face states and bulk superconductivity. While the enhancement of the superconducting transition temperature is established, the character of the electronic states induced by indium doping remains poorly understood. We report a study of magneto-transport in a series of Sn1-xInxTe single crystals with 0:1 ≤ x ≤ 0:45. From measurements of the Hall effect, we find that the dominant carrier type changes from hole-like to electron-like at x ~ 0:25; one would expect electron-like carriers if the In ions have a valence of +3. For single crystals with x = 0:45, corresponding to the highest super- conducting transition temperature, pronounced Shubnikov-de Haas oscillations are observed in the normal state. In measurements of magnetoresistance, we nd evidence for weak anti-localization (WAL). We attribute both the quantum oscillations and the WAL to bulk Dirac-like hole pockets, previously observed in photoemission studies, which coexist with the dominant electron-like carriers.},
doi = {10.1103/PhysRevB.98.054503},
journal = {Physical Review B},
number = 5,
volume = 98,
place = {United States},
year = {2018},
month = {8}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 1 work
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Observation of a topological crystalline insulator phase and topological phase transition in Pb1−xSnxTe
journal, January 2012

  • Xu, Su-Yang; Liu, Chang; Alidoust, N.
  • Nature Communications, Vol. 3, Issue 1
  • DOI: 10.1038/ncomms2191

Topological insulators and superconductors
journal, October 2011


The birth of topological insulators
journal, March 2010


Type II superconducting parameters of Tl-doped PbTe determined from heat capacity and electronic transport measurements
journal, October 2006


Weak localization and antilocalization in topological insulator thin films with coherent bulk-surface coupling
journal, July 2012


Quantum coherent transport in SnTe topological crystalline insulator thin films
journal, September 2014

  • Assaf, B. A.; Katmis, F.; Wei, P.
  • Applied Physics Letters, Vol. 105, Issue 10
  • DOI: 10.1063/1.4895456

The ordered crystal structure of In2Te3
journal, October 1959


Effects of Resonance Bonding on the Properties of Crystalline and Amorphous Semiconductors
journal, July 1973


Weak-Field Magnetoresistance and the Valence-Band Structure of SnTe
journal, March 1972


Time-Reversal-Invariant Topological Superconductors and Superfluids in Two and Three Dimensions
journal, May 2009


Enhanced superconducting pairing interaction in indium-doped tin telluride
journal, January 2009


Observation of surface states on heavily indium-doped SnTe(111), a superconducting topological crystalline insulator
journal, February 2016


Superconducting properties of the In-substituted topological crystalline insulator SnTe
journal, April 2013


Colloquium: Topological insulators
journal, November 2010


Experimental realization of a topological crystalline insulator in SnTe
journal, September 2012

  • Tanaka, Y.; Ren, Zhi; Sato, T.
  • Nature Physics, Vol. 8, Issue 11
  • DOI: 10.1038/nphys2442

Anomalous composition dependence of the superconductivity in In-doped SnTe
journal, January 2016


Quantum Oscillations and Hall Anomaly of Surface States in the Topological Insulator Bi2Te3
journal, July 2010


Spin-Orbit Interaction and Magnetoresistance in the Two Dimensional Random System
journal, February 1980

  • Hikami, S.; Larkin, A. I.; Nagaoka, Y.
  • Progress of Theoretical Physics, Vol. 63, Issue 2
  • DOI: 10.1143/PTP.63.707

Topological Crystalline Insulators
journal, March 2011


Odd-Parity Pairing and Topological Superconductivity in a Strongly Spin-Orbit Coupled Semiconductor
journal, November 2012


Optimizing the superconducting transition temperature and upper critical field of Sn 1 x In x Te
journal, July 2013


Large bulk resistivity and surface quantum oscillations in the topological insulator Bi 2 Te 2 Se
journal, December 2010


The infrared effective charge in IV-VI compounds. I. A simple one-dimensional model
journal, November 1979


Superconducting Proximity Effect and Majorana Fermions at the Surface of a Topological Insulator
journal, March 2008


Deep and resonance states in A IV B VI semiconductors
journal, January 1985


Full-potential, linearized augmented plane wave programs for crystalline systems
journal, June 1990


Topological crystalline insulators in the SnTe material class
journal, January 2012

  • Hsieh, Timothy H.; Lin, Hsin; Liu, Junwei
  • Nature Communications, Vol. 3, Article No. 982
  • DOI: 10.1038/ncomms1969

Weak Anti-localization and Quantum Oscillations of Surface States in Topological Insulator Bi2Se2Te
journal, October 2012

  • Bao, Lihong; He, Liang; Meyer, Nicholas
  • Scientific Reports, Vol. 2, Issue 1
  • DOI: 10.1038/srep00726

Impurity Effect on Weak Antilocalization in the Topological Insulator Bi 2 Te 3
journal, April 2011


Superconductivity, pairing symmetry, and disorder in the doped topological insulator Sn 1 x In x Te for x 0.10
journal, January 2018


Fermiology of the Strongly Spin-Orbit Coupled Superconductor Sn 1 x In x Te : Implications for Topological Superconductivity
journal, May 2013


Two-dimensional surface state in the quantum limit of a topological insulator
journal, November 2010

  • Analytis, James G.; McDonald, Ross D.; Riggs, Scott C.
  • Nature Physics, Vol. 6, Issue 12
  • DOI: 10.1038/nphys1861

Low-energy phonons and superconductivity in Sn 0.8 In 0.2 Te
journal, February 2015


Band Structure of SnTe Studied by Photoemission Spectroscopy
journal, August 2010


Quantum oscillations in a topological insulator Bi2Te2Se with large bulk resistivity ()
journal, February 2012

  • Xiong, Jun; Petersen, A. C.; Qu, Dongxia
  • Physica E: Low-dimensional Systems and Nanostructures, Vol. 44, Issue 5
  • DOI: 10.1016/j.physe.2011.09.011

Weak antilocalization in (111) thin films of a topological crystalline insulator SnTe
journal, December 2014


Revealing Surface States in In-Doped SnTe Nanoplates with Low Bulk Mobility
journal, May 2015


Enhanced surface mobility and quantum oscillations in topological insulator Bi 1.5 Sb 0.5 Te 1.7 Se 1.3 nanoflakes
journal, October 2013

  • Hsiung, Te-Chih; Chen, Ding-Yuan; Zhao, Li
  • Applied Physics Letters, Vol. 103, Issue 16
  • DOI: 10.1063/1.4826092