Electron and hole contributions to normalstate transport in the superconducting system ${\mathrm{Sn}}_{1x}{\mathrm{In}}_{x}\mathrm{Te}$
Abstract
Indiumdoped SnTe has been of interest because the system can exhibit both topological sur face states and bulk superconductivity. While the enhancement of the superconducting transition temperature is established, the character of the electronic states induced by indium doping remains poorly understood. We report a study of magnetotransport in a series of Sn_{1x}In_{x}Te single crystals with 0:1 ≤ x ≤ 0:45. From measurements of the Hall effect, we find that the dominant carrier type changes from holelike to electronlike at x ~ 0:25; one would expect electronlike carriers if the In ions have a valence of +3. For single crystals with x = 0:45, corresponding to the highest super conducting transition temperature, pronounced Shubnikovde Haas oscillations are observed in the normal state. In measurements of magnetoresistance, we nd evidence for weak antilocalization (WAL). We attribute both the quantum oscillations and the WAL to bulk Diraclike hole pockets, previously observed in photoemission studies, which coexist with the dominant electronlike carriers.
 Authors:

 Brookhaven National Lab. (BNL), Upton, NY (United States); Stony Brook Univ., NY (United States)
 Brookhaven National Lab. (BNL), Upton, NY (United States)
 Publication Date:
 Research Org.:
 Energy Frontier Research Centers (EFRC) (United States). Center for Emergent Superconductivity (CES); Brookhaven National Laboratory (BNL), Upton, NY (United States)
 Sponsoring Org.:
 USDOE Office of Science (SC), Basic Energy Sciences (BES)
 OSTI Identifier:
 1466623
 Alternate Identifier(s):
 OSTI ID: 1463759
 Report Number(s):
 BNL2079802018JAAM
Journal ID: ISSN 24699950; PRBMDO
 Grant/Contract Number:
 SC0012704
 Resource Type:
 Accepted Manuscript
 Journal Name:
 Physical Review B
 Additional Journal Information:
 Journal Volume: 98; Journal Issue: 5; Journal ID: ISSN 24699950
 Publisher:
 American Physical Society (APS)
 Country of Publication:
 United States
 Language:
 English
 Subject:
 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Zhang, Cheng, He, XuGang, Chi, Hang, Zhong, Ruidan, Ku, Wei, Gu, Genda, Tranquada, J. M., and Li, Qiang. Electron and hole contributions to normalstate transport in the superconducting system Sn1xInxTe. United States: N. p., 2018.
Web. doi:10.1103/PhysRevB.98.054503.
Zhang, Cheng, He, XuGang, Chi, Hang, Zhong, Ruidan, Ku, Wei, Gu, Genda, Tranquada, J. M., & Li, Qiang. Electron and hole contributions to normalstate transport in the superconducting system Sn1xInxTe. United States. https://doi.org/10.1103/PhysRevB.98.054503
Zhang, Cheng, He, XuGang, Chi, Hang, Zhong, Ruidan, Ku, Wei, Gu, Genda, Tranquada, J. M., and Li, Qiang. Thu .
"Electron and hole contributions to normalstate transport in the superconducting system Sn1xInxTe". United States. https://doi.org/10.1103/PhysRevB.98.054503. https://www.osti.gov/servlets/purl/1466623.
@article{osti_1466623,
title = {Electron and hole contributions to normalstate transport in the superconducting system Sn1xInxTe},
author = {Zhang, Cheng and He, XuGang and Chi, Hang and Zhong, Ruidan and Ku, Wei and Gu, Genda and Tranquada, J. M. and Li, Qiang},
abstractNote = {Indiumdoped SnTe has been of interest because the system can exhibit both topological sur face states and bulk superconductivity. While the enhancement of the superconducting transition temperature is established, the character of the electronic states induced by indium doping remains poorly understood. We report a study of magnetotransport in a series of Sn1xInxTe single crystals with 0:1 ≤ x ≤ 0:45. From measurements of the Hall effect, we find that the dominant carrier type changes from holelike to electronlike at x ~ 0:25; one would expect electronlike carriers if the In ions have a valence of +3. For single crystals with x = 0:45, corresponding to the highest super conducting transition temperature, pronounced Shubnikovde Haas oscillations are observed in the normal state. In measurements of magnetoresistance, we nd evidence for weak antilocalization (WAL). We attribute both the quantum oscillations and the WAL to bulk Diraclike hole pockets, previously observed in photoemission studies, which coexist with the dominant electronlike carriers.},
doi = {10.1103/PhysRevB.98.054503},
journal = {Physical Review B},
number = 5,
volume = 98,
place = {United States},
year = {2018},
month = {8}
}
Web of Science
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