Above-Band Gap Photoinduced Stabilization of Engineered Ferroelectric Domains

doi:10.1021/acsami.8b00254

Title: Above-Band Gap Photoinduced Stabilization of Engineered Ferroelectric Domains

Abstract

The effect of above-band gap photons on the domains of the BiFeO3 (BFO) thin film was investigated via piezoresponse force microscopy and Kelvin probe force microscopy. It is found that under above-band gap illumination, the relaxation time of the polarization state was significantly extended, while the effective polarizing voltage for the pristine domains was reduced. We propose that this photoinduced domain stabilization can be attributed to the interaction between photogenerated surface charges and domains. Importantly, a similar phenomenon is observed in other ferroelectric (FE) materials with an internal electric field once they are illuminated by above-band gap light, indicating that this photoinduced stabilization is potentially universal rather than specific to BFO. Furthermore, this study will not only contribute to the knowledge of photovoltaic (PV) phenomena but also provide a new route to promote the stability of PV and FE materials.

Authors:

^[1]; Lu, Teng ^[1];

^[2]; Liu, Zhifu ^[3]; Li, Yongxiang ^[3]; Kremer, Felipe ^[4]; Li, Li ^[1]; Withers, Ray L. ^[1]; Wen, Haidan ^[2];

^[1]

The Australian National Univ., Canberra ACT (Australia)
Argonne National Lab. (ANL), Argonne, IL (United States)
Chinese Academy of Sciences, Shanghai (People's Republic of China)
Australian National Univ., Canberra ACT (Australia)

Publication Date:: 2018-03-09

Research Org.:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org.:: Australian Research Council; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division

OSTI Identifier:: 1466402

Grant/Contract Number:: AC02-06CH11357

Resource Type:: Accepted Manuscript

Journal Name:: ACS Applied Materials and Interfaces

Additional Journal Information:: Journal Volume: 10; Journal Issue: 15; Journal ID: ISSN 1944-8244

Publisher:: American Chemical Society (ACS)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; KPFM; PFM; above-bandgap illumination; domain; ferroelectrics; relaxation time; surface

Citation Formats


                    Mai, Haoxin, Lu, Teng, Li, Qian, Liu, Zhifu, Li, Yongxiang, Kremer, Felipe, Li, Li, Withers, Ray L., Wen, Haidan, and Liu, Yun. Above-Band Gap Photoinduced Stabilization of Engineered Ferroelectric Domains.  United States: N. p., 2018. 
        Web.  doi:10.1021/acsami.8b00254.

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                    Mai, Haoxin, Lu, Teng, Li, Qian, Liu, Zhifu, Li, Yongxiang, Kremer, Felipe, Li, Li, Withers, Ray L., Wen, Haidan, & Liu, Yun. Above-Band Gap Photoinduced Stabilization of Engineered Ferroelectric Domains.  United States.  doi:10.1021/acsami.8b00254.

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                    Mai, Haoxin, Lu, Teng, Li, Qian, Liu, Zhifu, Li, Yongxiang, Kremer, Felipe, Li, Li, Withers, Ray L., Wen, Haidan, and Liu, Yun. Fri .  
        "Above-Band Gap Photoinduced Stabilization of Engineered Ferroelectric Domains".  United States.  doi:10.1021/acsami.8b00254.  https://www.osti.gov/servlets/purl/1466402.

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@article{osti_1466402,

  title        = {Above-Band Gap Photoinduced Stabilization of Engineered Ferroelectric Domains},

  author       = {Mai, Haoxin and Lu, Teng and Li, Qian and Liu, Zhifu and Li, Yongxiang and Kremer, Felipe and Li, Li and Withers, Ray L. and Wen, Haidan and Liu, Yun},

  abstractNote = {The effect of above-band gap photons on the domains of the BiFeO3 (BFO) thin film was investigated via piezoresponse force microscopy and Kelvin probe force microscopy. It is found that under above-band gap illumination, the relaxation time of the polarization state was significantly extended, while the effective polarizing voltage for the pristine domains was reduced. We propose that this photoinduced domain stabilization can be attributed to the interaction between photogenerated surface charges and domains. Importantly, a similar phenomenon is observed in other ferroelectric (FE) materials with an internal electric field once they are illuminated by above-band gap light, indicating that this photoinduced stabilization is potentially universal rather than specific to BFO. Furthermore, this study will not only contribute to the knowledge of photovoltaic (PV) phenomena but also provide a new route to promote the stability of PV and FE materials.},

  doi          = {10.1021/acsami.8b00254},

  journal      = {ACS Applied Materials and Interfaces},

  number       = 15,

  volume       = 10,

  place        = {United States},

  year         = {2018},

  month        = {3}

}

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DOI: 10.1021/acsami.8b00254

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Cited by: 4 works

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Figures / Tables:

Figure 1: Characterization of as-prepared BFO thin films. (a) Specular scan XRD pattern (b) rocking curve scan around the BFO 110_C reflection along with the Gaussian peak fit (FWHM ~ 1.54°) , ; inset is a scanning X-ray diffraction map based on the BFO 110_C reflection measured at the rockingmore »

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