Above-Band Gap Photoinduced Stabilization of Engineered Ferroelectric Domains
Abstract
The effect of above-band gap photons on the domains of the BiFeO3 (BFO) thin film was investigated via piezoresponse force microscopy and Kelvin probe force microscopy. It is found that under above-band gap illumination, the relaxation time of the polarization state was significantly extended, while the effective polarizing voltage for the pristine domains was reduced. We propose that this photoinduced domain stabilization can be attributed to the interaction between photogenerated surface charges and domains. Importantly, a similar phenomenon is observed in other ferroelectric (FE) materials with an internal electric field once they are illuminated by above-band gap light, indicating that this photoinduced stabilization is potentially universal rather than specific to BFO. Furthermore, this study will not only contribute to the knowledge of photovoltaic (PV) phenomena but also provide a new route to promote the stability of PV and FE materials.
- Authors:
-
- The Australian National Univ., Canberra ACT (Australia)
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Chinese Academy of Sciences, Shanghai (People's Republic of China)
- Australian National Univ., Canberra ACT (Australia)
- Publication Date:
- Research Org.:
- Argonne National Lab. (ANL), Argonne, IL (United States)
- Sponsoring Org.:
- Australian Research Council; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
- OSTI Identifier:
- 1466402
- Grant/Contract Number:
- AC02-06CH11357
- Resource Type:
- Accepted Manuscript
- Journal Name:
- ACS Applied Materials and Interfaces
- Additional Journal Information:
- Journal Volume: 10; Journal Issue: 15; Journal ID: ISSN 1944-8244
- Publisher:
- American Chemical Society (ACS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; KPFM; PFM; above-bandgap illumination; domain; ferroelectrics; relaxation time; surface
Citation Formats
Mai, Haoxin, Lu, Teng, Li, Qian, Liu, Zhifu, Li, Yongxiang, Kremer, Felipe, Li, Li, Withers, Ray L., Wen, Haidan, and Liu, Yun. Above-Band Gap Photoinduced Stabilization of Engineered Ferroelectric Domains. United States: N. p., 2018.
Web. doi:10.1021/acsami.8b00254.
Mai, Haoxin, Lu, Teng, Li, Qian, Liu, Zhifu, Li, Yongxiang, Kremer, Felipe, Li, Li, Withers, Ray L., Wen, Haidan, & Liu, Yun. Above-Band Gap Photoinduced Stabilization of Engineered Ferroelectric Domains. United States. doi:10.1021/acsami.8b00254.
Mai, Haoxin, Lu, Teng, Li, Qian, Liu, Zhifu, Li, Yongxiang, Kremer, Felipe, Li, Li, Withers, Ray L., Wen, Haidan, and Liu, Yun. Fri .
"Above-Band Gap Photoinduced Stabilization of Engineered Ferroelectric Domains". United States. doi:10.1021/acsami.8b00254. https://www.osti.gov/servlets/purl/1466402.
@article{osti_1466402,
title = {Above-Band Gap Photoinduced Stabilization of Engineered Ferroelectric Domains},
author = {Mai, Haoxin and Lu, Teng and Li, Qian and Liu, Zhifu and Li, Yongxiang and Kremer, Felipe and Li, Li and Withers, Ray L. and Wen, Haidan and Liu, Yun},
abstractNote = {The effect of above-band gap photons on the domains of the BiFeO3 (BFO) thin film was investigated via piezoresponse force microscopy and Kelvin probe force microscopy. It is found that under above-band gap illumination, the relaxation time of the polarization state was significantly extended, while the effective polarizing voltage for the pristine domains was reduced. We propose that this photoinduced domain stabilization can be attributed to the interaction between photogenerated surface charges and domains. Importantly, a similar phenomenon is observed in other ferroelectric (FE) materials with an internal electric field once they are illuminated by above-band gap light, indicating that this photoinduced stabilization is potentially universal rather than specific to BFO. Furthermore, this study will not only contribute to the knowledge of photovoltaic (PV) phenomena but also provide a new route to promote the stability of PV and FE materials.},
doi = {10.1021/acsami.8b00254},
journal = {ACS Applied Materials and Interfaces},
number = 15,
volume = 10,
place = {United States},
year = {2018},
month = {3}
}
Web of Science
Figures / Tables:

Works referencing / citing this record:
High performance bulk photovoltaics in narrow-bandgap centrosymmetric ultrathin films
journal, January 2020
- Mai, Haoxin; Lu, Teng; Sun, Qingbo
- Materials Horizons, Vol. 7, Issue 3
Progress in BiFeO 3 -based heterostructures: materials, properties and applications
journal, January 2020
- Yin, Li; Mi, Wenbo
- Nanoscale, Vol. 12, Issue 2
Evaluation of the Structural Phase Transition in Multiferroic (Bi1−x Prx)(Fe0.95 Mn0.05)O3 Thin Films by A Multi-Technique Approach Including Picosecond Laser Ultrasonics
journal, February 2019
- Raetz, Samuel; Lomonosov, Alexey; Avanesyan, Sergey
- Applied Sciences, Vol. 9, Issue 4
Figures / Tables found in this record: