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Title: Above-Band Gap Photoinduced Stabilization of Engineered Ferroelectric Domains

Abstract

The effect of above-band gap photons on the domains of the BiFeO3 (BFO) thin film was investigated via piezoresponse force microscopy and Kelvin probe force microscopy. It is found that under above-band gap illumination, the relaxation time of the polarization state was significantly extended, while the effective polarizing voltage for the pristine domains was reduced. We propose that this photoinduced domain stabilization can be attributed to the interaction between photogenerated surface charges and domains. Importantly, a similar phenomenon is observed in other ferroelectric (FE) materials with an internal electric field once they are illuminated by above-band gap light, indicating that this photoinduced stabilization is potentially universal rather than specific to BFO. Furthermore, this study will not only contribute to the knowledge of photovoltaic (PV) phenomena but also provide a new route to promote the stability of PV and FE materials.

Authors:
ORCiD logo [1];  [1]; ORCiD logo [2];  [3];  [3];  [4];  [1];  [1];  [2]; ORCiD logo [1]
  1. The Australian National Univ., Canberra ACT (Australia)
  2. Argonne National Lab. (ANL), Argonne, IL (United States)
  3. Chinese Academy of Sciences, Shanghai (People's Republic of China)
  4. Australian National Univ., Canberra ACT (Australia)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
Australian Research Council; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
OSTI Identifier:
1466402
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
ACS Applied Materials and Interfaces
Additional Journal Information:
Journal Volume: 10; Journal Issue: 15; Journal ID: ISSN 1944-8244
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; KPFM; PFM; above-bandgap illumination; domain; ferroelectrics; relaxation time; surface

Citation Formats

Mai, Haoxin, Lu, Teng, Li, Qian, Liu, Zhifu, Li, Yongxiang, Kremer, Felipe, Li, Li, Withers, Ray L., Wen, Haidan, and Liu, Yun. Above-Band Gap Photoinduced Stabilization of Engineered Ferroelectric Domains. United States: N. p., 2018. Web. doi:10.1021/acsami.8b00254.
Mai, Haoxin, Lu, Teng, Li, Qian, Liu, Zhifu, Li, Yongxiang, Kremer, Felipe, Li, Li, Withers, Ray L., Wen, Haidan, & Liu, Yun. Above-Band Gap Photoinduced Stabilization of Engineered Ferroelectric Domains. United States. doi:10.1021/acsami.8b00254.
Mai, Haoxin, Lu, Teng, Li, Qian, Liu, Zhifu, Li, Yongxiang, Kremer, Felipe, Li, Li, Withers, Ray L., Wen, Haidan, and Liu, Yun. Fri . "Above-Band Gap Photoinduced Stabilization of Engineered Ferroelectric Domains". United States. doi:10.1021/acsami.8b00254. https://www.osti.gov/servlets/purl/1466402.
@article{osti_1466402,
title = {Above-Band Gap Photoinduced Stabilization of Engineered Ferroelectric Domains},
author = {Mai, Haoxin and Lu, Teng and Li, Qian and Liu, Zhifu and Li, Yongxiang and Kremer, Felipe and Li, Li and Withers, Ray L. and Wen, Haidan and Liu, Yun},
abstractNote = {The effect of above-band gap photons on the domains of the BiFeO3 (BFO) thin film was investigated via piezoresponse force microscopy and Kelvin probe force microscopy. It is found that under above-band gap illumination, the relaxation time of the polarization state was significantly extended, while the effective polarizing voltage for the pristine domains was reduced. We propose that this photoinduced domain stabilization can be attributed to the interaction between photogenerated surface charges and domains. Importantly, a similar phenomenon is observed in other ferroelectric (FE) materials with an internal electric field once they are illuminated by above-band gap light, indicating that this photoinduced stabilization is potentially universal rather than specific to BFO. Furthermore, this study will not only contribute to the knowledge of photovoltaic (PV) phenomena but also provide a new route to promote the stability of PV and FE materials.},
doi = {10.1021/acsami.8b00254},
journal = {ACS Applied Materials and Interfaces},
number = 15,
volume = 10,
place = {United States},
year = {2018},
month = {3}
}

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Figures / Tables:

Figure 1 Figure 1: Characterization of as-prepared BFO thin films. (a) Specular scan XRD pattern (b) rocking curve scan around the BFO 110C reflection along with the Gaussian peak fit (FWHM ~ 1.54°) , ; inset is a scanning X-ray diffraction map based on the BFO 110C reflection measured at the rockingmore » angle ω = 10.5° (Scale bar = 5 μm). (c) Cross-section TEM image of the BFO thin film. (d) AFM image of the BFO thin film in a region of 1.5 × 1.5 μm2. (e) Calculated band gap of the BFO thin films with the tangent of the linear part as dotted line (Inset is the raw UV–vis absorption spectrum).« less

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