Strain annealing of SiC nanoparticles revealed through Bragg coherent diffraction imaging for quantum technologies

doi:10.1103/PhysRevMaterials.2.086001

Title: Strain annealing of SiC nanoparticles revealed through Bragg coherent diffraction imaging for quantum technologies

Abstract

The crystalline strain properties of nanoparticles have broad implications in a number of emerging fields, including quantum and biological sensing in which heterogeneous internal strain fields are detrimental to performance. Here we used synchrotron-based Bragg coherent x-ray diffraction imaging (BCDI) to measure three-dimensional lattice strain fields within individual 3C-SiC nanoparticles, a candidate host material for quantum sensing, as a function of temperature during and after annealing up to 900 degrees C. We observed pronounced homogenization of the initial strain field at temperatures above 500 degrees C, and we find that the surface layers and central volumes of the nanoparticles reduce strain at similar rates, suggesting a uniform healing mechanism. Thus, we attribute the observed strain homogenization to activation of mobile point defects that annihilate and improve the overall quality of the crystal lattice. This work also establishes the feasibility of performing BCDI at high temperatures (up to 900 degrees C) to map structural hystereses relevant to the processing of quantum nanomaterials.

Authors:

Hruszkewycz, S. O. ^[1]; Maddali, S. ^[1]; Anderson, C. P. ^[2]; Cha, W. ^[3]; Miao, K. C. ^[4]; Highland, M. J. ^[1]; Ulvestad, A. ^[1]; Awschalom, D. D. ^[5]; Heremans, F. J. ^[5]

Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
Univ. of Chicago, IL (United States). Dept. of Physics; Univ. of Chicago, IL (United States). Inst. for Molecular Engineering
Argonne National Lab. (ANL), Argonne, IL (United States). X-ray Science Division
Univ. of Chicago, IL (United States). Inst. for Molecular Engineering
Univ. of Chicago, IL (United States). Inst. for Molecular Engineering; Argonne National Lab. (ANL), Argonne, IL (United States). Inst. for Molecular Engineering & Materials Science Division

Publication Date:: 2018-08-01

Research Org.:: Argonne National Lab. (ANL), Argonne, IL (United States)

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

OSTI Identifier:: 1466340

Alternate Identifier(s):: OSTI ID: 1462585

Grant/Contract Number:: AC02-06CH11357

Resource Type:: Accepted Manuscript

Journal Name:: Physical Review Materials

Additional Journal Information:: Journal Volume: 2; Journal Issue: 8; Journal ID: ISSN 2475-9953

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; semiconductor; nanocrystal; quantum sensing; strain

Citation Formats


                    Hruszkewycz, S. O., Maddali, S., Anderson, C. P., Cha, W., Miao, K. C., Highland, M. J., Ulvestad, A., Awschalom, D. D., and Heremans, F. J. Strain annealing of SiC nanoparticles revealed through Bragg coherent diffraction imaging for quantum technologies.  United States: N. p., 2018. 
        Web.  doi:10.1103/PhysRevMaterials.2.086001.

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                    Hruszkewycz, S. O., Maddali, S., Anderson, C. P., Cha, W., Miao, K. C., Highland, M. J., Ulvestad, A., Awschalom, D. D., & Heremans, F. J. Strain annealing of SiC nanoparticles revealed through Bragg coherent diffraction imaging for quantum technologies.  United States.  doi:10.1103/PhysRevMaterials.2.086001.

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                    Hruszkewycz, S. O., Maddali, S., Anderson, C. P., Cha, W., Miao, K. C., Highland, M. J., Ulvestad, A., Awschalom, D. D., and Heremans, F. J. Wed .  
        "Strain annealing of SiC nanoparticles revealed through Bragg coherent diffraction imaging for quantum technologies".  United States.  doi:10.1103/PhysRevMaterials.2.086001.  https://www.osti.gov/servlets/purl/1466340.

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@article{osti_1466340,

  title        = {Strain annealing of SiC nanoparticles revealed through Bragg coherent diffraction imaging for quantum technologies},

  author       = {Hruszkewycz, S. O. and Maddali, S. and Anderson, C. P. and Cha, W. and Miao, K. C. and Highland, M. J. and Ulvestad, A. and Awschalom, D. D. and Heremans, F. J.},

  abstractNote = {The crystalline strain properties of nanoparticles have broad implications in a number of emerging fields, including quantum and biological sensing in which heterogeneous internal strain fields are detrimental to performance. Here we used synchrotron-based Bragg coherent x-ray diffraction imaging (BCDI) to measure three-dimensional lattice strain fields within individual 3C-SiC nanoparticles, a candidate host material for quantum sensing, as a function of temperature during and after annealing up to 900 degrees C. We observed pronounced homogenization of the initial strain field at temperatures above 500 degrees C, and we find that the surface layers and central volumes of the nanoparticles reduce strain at similar rates, suggesting a uniform healing mechanism. Thus, we attribute the observed strain homogenization to activation of mobile point defects that annihilate and improve the overall quality of the crystal lattice. This work also establishes the feasibility of performing BCDI at high temperatures (up to 900 degrees C) to map structural hystereses relevant to the processing of quantum nanomaterials.},

  doi          = {10.1103/PhysRevMaterials.2.086001},

  journal      = {Physical Review Materials},

  number       = 8,

  volume       = 2,

  place        = {United States},

  year         = {2018},

  month        = {8}

}

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DOI: 10.1103/PhysRevMaterials.2.086001

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Title: Strain annealing of SiC nanoparticles revealed through Bragg coherent diffraction imaging for quantum technologies

Abstract

Citation Formats

The nitrogen-vacancy colour centre in diamond journal, July 2013

Ab initio study of the migration of intrinsic defects in 3 C − SiC journal, November 2003

Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface journal, June 2017

Coherent X-ray diffraction imaging of strain at the nanoscale journal, April 2009

Topological defect dynamics in operando battery nanoparticles journal, June 2015

The silicon vacancy in SiC journal, December 2009

Avalanching strain dynamics during the hydriding phase transformation in individual palladium nanoparticles journal, December 2015

Thermal expansion coefficient of 3C–SiC journal, November 1995

Nitrogen-Vacancy Centers in Diamond: Nanoscale Sensors for Physics and Biology journal, April 2014

In situ study of annealing-induced strain relaxation in diamond nanoparticles using Bragg coherent diffraction imaging journal, February 2017

Structure of the silicon vacancy in 6 H − SiC after annealing identified as the carbon vacancy–carbon antisite pair journal, December 2001

Control of Spin Defects in Wide-Bandgap Semiconductors for Quantum Technologies journal, October 2016

Temperature shifts of the resonances of the NV − center in diamond journal, July 2014

Review of Silicon Carbide Power Devices and Their Applications journal, October 2017

Effects of Annealing on Residual Stress and Strain Gradient of Doped Polycrystalline SiC Thin Films journal, January 2008

3D lattice distortions and defect structures in ion-implanted nano-crystals journal, April 2017

Lattice swelling and modulus change in a helium-implanted tungsten alloy: X-ray micro-diffraction, surface acoustic wave measurements, and multiscale modelling journal, May 2015

Quantum sensing journal, July 2017

Silicon carbide MEMS for harsh environments journal, January 1998

Intrinsic Defects in Cubic Silicon Carbide journal, July 1997

Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams journal, November 1997

Stark tuning and electrical charge state control of single divacancies in silicon carbide journal, December 2017

Room temperature coherent control of defect spin qubits in silicon carbide journal, November 2011

Polytype control of spin qubits in silicon carbide journal, May 2013

The quantitative calculation of SiC polytypes from measurements of X-ray diffraction peak intensities journal, August 1979

Room Temperature Quantum Emission from Cubic Silicon Carbide Nanoparticles journal, July 2014

Carbon vacancy-related defect in 4 H and 6 H SiC journal, April 2001

First-principles study of neutral silicon interstitials in 3C- and 4H-SiC journal, September 2009

Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide journal, July 2014

Silicon carbide high-power devices journal, January 1996

3D Imaging of Twin Domain Defects in Gold Nanoparticles journal, May 2015

The nitrogen-vacancy colour centre in diamond
journal, July 2013

Ab initio study of the migration of intrinsic defects in $3 C - SiC$
journal, November 2003

Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface
journal, June 2017

Coherent X-ray diffraction imaging of strain at the nanoscale
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journal, June 2015

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journal, December 2009

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journal, December 2015

Thermal expansion coefficient of 3C–SiC
journal, November 1995

Nitrogen-Vacancy Centers in Diamond: Nanoscale Sensors for Physics and Biology
journal, April 2014

In situ study of annealing-induced strain relaxation in diamond nanoparticles using Bragg coherent diffraction imaging
journal, February 2017

Structure of the silicon vacancy in $6 H - SiC$ after annealing identified as the carbon vacancy–carbon antisite pair
journal, December 2001

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journal, October 2016

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journal, July 2014

Review of Silicon Carbide Power Devices and Their Applications
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