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Title: Strain annealing of SiC nanoparticles revealed through Bragg coherent diffraction imaging for quantum technologies

Abstract

The crystalline strain properties of nanoparticles have broad implications in a number of emerging fields, including quantum and biological sensing in which heterogeneous internal strain fields are detrimental to performance. Here we used synchrotron-based Bragg coherent x-ray diffraction imaging (BCDI) to measure three-dimensional lattice strain fields within individual 3C-SiC nanoparticles, a candidate host material for quantum sensing, as a function of temperature during and after annealing up to 900 degrees C. We observed pronounced homogenization of the initial strain field at temperatures above 500 degrees C, and we find that the surface layers and central volumes of the nanoparticles reduce strain at similar rates, suggesting a uniform healing mechanism. Thus, we attribute the observed strain homogenization to activation of mobile point defects that annihilate and improve the overall quality of the crystal lattice. This work also establishes the feasibility of performing BCDI at high temperatures (up to 900 degrees C) to map structural hystereses relevant to the processing of quantum nanomaterials.

Authors:
 [1];  [1];  [2];  [3];  [4];  [1];  [1];  [5];  [5]
+ Show Author Affiliations
  1. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  2. Univ. of Chicago, IL (United States). Dept. of Physics; Univ. of Chicago, IL (United States). Inst. for Molecular Engineering
  3. Argonne National Lab. (ANL), Argonne, IL (United States). X-ray Science Division
  4. Univ. of Chicago, IL (United States). Inst. for Molecular Engineering
  5. Univ. of Chicago, IL (United States). Inst. for Molecular Engineering; Argonne National Lab. (ANL), Argonne, IL (United States). Inst. for Molecular Engineering & Materials Science Division
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1466340
Alternate Identifier(s):
OSTI ID: 1462585
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Volume: 2; Journal Issue: 8; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; semiconductor; nanocrystal; quantum sensing; strain

Citation Formats

Hruszkewycz, S. O., Maddali, S., Anderson, C. P., Cha, W., Miao, K. C., Highland, M. J., Ulvestad, A., Awschalom, D. D., and Heremans, F. J. Strain annealing of SiC nanoparticles revealed through Bragg coherent diffraction imaging for quantum technologies. United States: N. p., 2018. Web. doi:10.1103/PhysRevMaterials.2.086001.
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Hruszkewycz, S. O., Maddali, S., Anderson, C. P., Cha, W., Miao, K. C., Highland, M. J., Ulvestad, A., Awschalom, D. D., & Heremans, F. J. Strain annealing of SiC nanoparticles revealed through Bragg coherent diffraction imaging for quantum technologies. United States. https://doi.org/10.1103/PhysRevMaterials.2.086001
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Hruszkewycz, S. O., Maddali, S., Anderson, C. P., Cha, W., Miao, K. C., Highland, M. J., Ulvestad, A., Awschalom, D. D., and Heremans, F. J. Wed . "Strain annealing of SiC nanoparticles revealed through Bragg coherent diffraction imaging for quantum technologies". United States. https://doi.org/10.1103/PhysRevMaterials.2.086001. https://www.osti.gov/servlets/purl/1466340.
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@article{osti_1466340,
title = {Strain annealing of SiC nanoparticles revealed through Bragg coherent diffraction imaging for quantum technologies},
author = {Hruszkewycz, S. O. and Maddali, S. and Anderson, C. P. and Cha, W. and Miao, K. C. and Highland, M. J. and Ulvestad, A. and Awschalom, D. D. and Heremans, F. J.},
abstractNote = {The crystalline strain properties of nanoparticles have broad implications in a number of emerging fields, including quantum and biological sensing in which heterogeneous internal strain fields are detrimental to performance. Here we used synchrotron-based Bragg coherent x-ray diffraction imaging (BCDI) to measure three-dimensional lattice strain fields within individual 3C-SiC nanoparticles, a candidate host material for quantum sensing, as a function of temperature during and after annealing up to 900 degrees C. We observed pronounced homogenization of the initial strain field at temperatures above 500 degrees C, and we find that the surface layers and central volumes of the nanoparticles reduce strain at similar rates, suggesting a uniform healing mechanism. Thus, we attribute the observed strain homogenization to activation of mobile point defects that annihilate and improve the overall quality of the crystal lattice. This work also establishes the feasibility of performing BCDI at high temperatures (up to 900 degrees C) to map structural hystereses relevant to the processing of quantum nanomaterials.},
doi = {10.1103/PhysRevMaterials.2.086001},
journal = {Physical Review Materials},
number = 8,
volume = 2,
place = {United States},
year = {2018},
month = {8}
}
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https://doi.org/10.1103/PhysRevMaterials.2.086001
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Works referenced in this record:

The nitrogen-vacancy colour centre in diamond
journal, July 2013

Ab initio study of the migration of intrinsic defects in 3 C − SiC
journal, November 2003

Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface
journal, June 2017

  • Christle, David J.; Klimov, Paul V.; de las Casas, Charles F.
  • Physical Review X, Vol. 7, Issue 2
  • DOI: 10.1103/PhysRevX.7.021046

Coherent X-ray diffraction imaging of strain at the nanoscale
journal, April 2009

  • Robinson, Ian; Harder, Ross
  • Nature Materials, Vol. 8, Issue 4
  • DOI: 10.1038/nmat2400

Topological defect dynamics in operando battery nanoparticles
journal, June 2015

The silicon vacancy in SiC
journal, December 2009

Avalanching strain dynamics during the hydriding phase transformation in individual palladium nanoparticles
journal, December 2015

  • Ulvestad, A.; Welland, M. J.; Collins, S. S. E.
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms10092

Thermal expansion coefficient of 3C–SiC
journal, November 1995

  • Talwar, D. N.; Sherbondy, Joseph C.
  • Applied Physics Letters, Vol. 67, Issue 22
  • DOI: 10.1063/1.115227

Nitrogen-Vacancy Centers in Diamond: Nanoscale Sensors for Physics and Biology
journal, April 2014

In situ study of annealing-induced strain relaxation in diamond nanoparticles using Bragg coherent diffraction imaging
journal, February 2017

  • Hruszkewycz, S. O.; Cha, W.; Andrich, P.
  • APL Materials, Vol. 5, Issue 2
  • DOI: 10.1063/1.4974865

Structure of the silicon vacancy in 6 H − SiC after annealing identified as the carbon vacancy–carbon antisite pair
journal, December 2001

Control of Spin Defects in Wide-Bandgap Semiconductors for Quantum Technologies
journal, October 2016

  • Heremans, F. Joseph; Yale, Christopher G.; Awschalom, David D.
  • Proceedings of the IEEE, Vol. 104, Issue 10
  • DOI: 10.1109/JPROC.2016.2561274

Temperature shifts of the resonances of the NV − center in diamond
journal, July 2014

Review of Silicon Carbide Power Devices and Their Applications
journal, October 2017

  • She, Xu; Huang, Alex Q.; Lucia, Oscar
  • IEEE Transactions on Industrial Electronics, Vol. 64, Issue 10
  • DOI: 10.1109/TIE.2017.2652401

Effects of Annealing on Residual Stress and Strain Gradient of Doped Polycrystalline SiC Thin Films
journal, January 2008

  • Roper, Christopher S.; Radmilovic, Velimir; Howe, Roger T.
  • Electrochemical and Solid-State Letters, Vol. 11, Issue 4
  • DOI: 10.1149/1.2831906

3D lattice distortions and defect structures in ion-implanted nano-crystals
journal, April 2017

  • Hofmann, Felix; Tarleton, Edmund; Harder, Ross J.
  • Scientific Reports, Vol. 7, Issue 1
  • DOI: 10.1038/srep45993

Quantum sensing
journal, July 2017

Silicon carbide MEMS for harsh environments
journal, January 1998

  • Mehregany, M.; Zorman, C. A.; Rajan, N.
  • Proceedings of the IEEE, Vol. 86, Issue 8
  • DOI: 10.1109/5.704265

Intrinsic Defects in Cubic Silicon Carbide
journal, July 1997

Annealing Properties of Defects in Ion-Implanted 3C-SiC Studied Using Monoenergetic Positron Beams
journal, November 1997

  • Uedono, Akira; Itoh, Hisayoshi; Ohshima, Takeshi
  • Japanese Journal of Applied Physics, Vol. 36, Issue Part 1, No. 11
  • DOI: 10.1143/JJAP.36.6650

Stark tuning and electrical charge state control of single divacancies in silicon carbide
journal, December 2017

  • de las Casas, Charles F.; Christle, David J.; Ul Hassan, Jawad
  • Applied Physics Letters, Vol. 111, Issue 26
  • DOI: 10.1063/1.5004174

Room temperature coherent control of defect spin qubits in silicon carbide
journal, November 2011

  • Koehl, William F.; Buckley, Bob B.; Heremans, F. Joseph
  • Nature, Vol. 479, Issue 7371
  • DOI: 10.1038/nature10562

Polytype control of spin qubits in silicon carbide
journal, May 2013

  • Falk, Abram L.; Buckley, Bob B.; Calusine, Greg
  • Nature Communications, Vol. 4, Issue 1
  • DOI: 10.1038/ncomms2854

The quantitative calculation of SiC polytypes from measurements of X-ray diffraction peak intensities
journal, August 1979

  • Ruska, J.; Gauckler, L. J.; Lorenz, J.
  • Journal of Materials Science, Vol. 14, Issue 8
  • DOI: 10.1007/BF00551044

Room Temperature Quantum Emission from Cubic Silicon Carbide Nanoparticles
journal, July 2014

  • Castelletto, Stefania; Johnson, Brett C.; Zachreson, Cameron
  • ACS Nano, Vol. 8, Issue 8
  • DOI: 10.1021/nn502719y

Carbon vacancy-related defect in 4 H and 6 H SiC
journal, April 2001

First-principles study of neutral silicon interstitials in 3C- and 4H-SiC
journal, September 2009

Magnetic field and temperature sensing with atomic-scale spin defects in silicon carbide
journal, July 2014

  • Kraus, H.; Soltamov, V. A.; Fuchs, F.
  • Scientific Reports, Vol. 4, Issue 1
  • DOI: 10.1038/srep05303

Silicon carbide high-power devices
journal, January 1996

  • Weitzel, C. E.; Palmour, J. W.; Carter, C. H.
  • IEEE Transactions on Electron Devices, Vol. 43, Issue 10
  • DOI: 10.1109/16.536819

3D Imaging of Twin Domain Defects in Gold Nanoparticles
journal, May 2015

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    Works referencing / citing this record:

    Three-dimensional optical trapping and orientation of microparticles for coherent X-ray diffraction imaging
    journal, February 2019

    • Gao, Yuan; Harder, Ross; Southworth, Stephen H.
    • Proceedings of the National Academy of Sciences, Vol. 116, Issue 10
    • DOI: 10.1073/pnas.1720785116

    Electrical and optical control of single spins integrated in scalable semiconductor devices
    journal, December 2019

    • Anderson, Christopher P.; Bourassa, Alexandre; Miao, Kevin C.
    • Science, Vol. 366, Issue 6470
    • DOI: 10.1126/science.aax9406
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