skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Thermal conductivity of GaAs/Ge nanostructures

Abstract

Superlattices are of great interest as platform materials for thermoelectric technology that are capable of directly converting low-grade heat energy into useful electrical power. In this paper, the thermal conductivities of GaAs/Ge superlattice nanostructures were investigated systematically in relation to their morphologies and interfaces. Thermal conductivities were measured using ultrafast time-domain thermoreflectance and were found to decrease with increasing interface densities, consistent with past understanding of microscopic phonon transport in the particle regime. The lowest thermal conductivities were observed in (GaAs)0.77(Ge2)0.23 alloys, and transmission electron microscopy study reveals phase separation in the alloys. These alloys can be interpreted as fine nanostructures, with length scales comparable to the periods of very thin superlattices. Electrical transport measurements along the film plane direction showed no significant reduction in electrical properties attributable to the interfaces between GaAs and Ge. Finally, our experimental findings help gain fundamental insight into nanoscale thermal transport in superlattices and are also useful for future improvement of thermoelectric performance using nanostructures.

Authors:
 [1]; ORCiD logo [2];  [2]; ORCiD logo [1]
  1. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Materials Science and Engineering
  2. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Mechanical Engineering
Publication Date:
Research Org.:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Energy Frontier Research Centers (EFRC) (United States). Solid-State Solar-Thermal Energy Conversion Center (S3TEC)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF); National Research Foundation (NRF) (Singapore)
OSTI Identifier:
1466226
Alternate Identifier(s):
OSTI ID: 1366562
Grant/Contract Number:  
SC0001299; FG02-09ER46577; DMR-14-19807
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 22; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; germanium; electrical properties; phonons; elemental semiconductors; III-V semiconductors; thermal models; superlattices; thermoelectric energy conversion; nanostructures; thermal conductivity

Citation Formats

Jia, Roger, Zeng, Lingping, Chen, Gang, and Fitzgerald, Eugene A. Thermal conductivity of GaAs/Ge nanostructures. United States: N. p., 2017. Web. doi:10.1063/1.4984957.
Jia, Roger, Zeng, Lingping, Chen, Gang, & Fitzgerald, Eugene A. Thermal conductivity of GaAs/Ge nanostructures. United States. doi:10.1063/1.4984957.
Jia, Roger, Zeng, Lingping, Chen, Gang, and Fitzgerald, Eugene A. Thu . "Thermal conductivity of GaAs/Ge nanostructures". United States. doi:10.1063/1.4984957. https://www.osti.gov/servlets/purl/1466226.
@article{osti_1466226,
title = {Thermal conductivity of GaAs/Ge nanostructures},
author = {Jia, Roger and Zeng, Lingping and Chen, Gang and Fitzgerald, Eugene A.},
abstractNote = {Superlattices are of great interest as platform materials for thermoelectric technology that are capable of directly converting low-grade heat energy into useful electrical power. In this paper, the thermal conductivities of GaAs/Ge superlattice nanostructures were investigated systematically in relation to their morphologies and interfaces. Thermal conductivities were measured using ultrafast time-domain thermoreflectance and were found to decrease with increasing interface densities, consistent with past understanding of microscopic phonon transport in the particle regime. The lowest thermal conductivities were observed in (GaAs)0.77(Ge2)0.23 alloys, and transmission electron microscopy study reveals phase separation in the alloys. These alloys can be interpreted as fine nanostructures, with length scales comparable to the periods of very thin superlattices. Electrical transport measurements along the film plane direction showed no significant reduction in electrical properties attributable to the interfaces between GaAs and Ge. Finally, our experimental findings help gain fundamental insight into nanoscale thermal transport in superlattices and are also useful for future improvement of thermoelectric performance using nanostructures.},
doi = {10.1063/1.4984957},
journal = {Applied Physics Letters},
number = 22,
volume = 110,
place = {United States},
year = {2017},
month = {6}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 2 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Measuring Phonon Mean Free Path Distributions by Probing Quasiballistic Phonon Transport in Grating Nanostructures
journal, November 2015

  • Zeng, Lingping; Collins, Kimberlee C.; Hu, Yongjie
  • Scientific Reports, Vol. 5, Issue 1
  • DOI: 10.1038/srep17131

Silicon nanowires as efficient thermoelectric materials
journal, January 2008

  • Boukai, Akram I.; Bunimovich, Yuri; Tahir-Kheli, Jamil
  • Nature, Vol. 451, Issue 7175, p. 168-171
  • DOI: 10.1038/nature06458

Thermal conductivity of symmetrically strained Si/Ge superlattices
journal, September 2000

  • Borca-Tasciuc, Theodorian; Liu, Weili; Liu, Jianlin
  • Superlattices and Microstructures, Vol. 28, Issue 3
  • DOI: 10.1006/spmi.2000.0900

Parameters influencing interfacial morphology in GaAs/Ge superlattices grown by metal organic chemical vapor deposition
journal, February 2016


Anisotropy of the Thermal Conductivity in GaAs/AlAs Superlattices
journal, August 2013

  • Luckyanova, Maria N.; Johnson, Jeremy A.; Maznev, A. A.
  • Nano Letters, Vol. 13, Issue 9
  • DOI: 10.1021/nl4001162

Ge‐GaAs superlattices by molecular beam epitaxy
journal, June 1981

  • Chang, Chin‐An; Segmüller, Armin; Chang, L. L.
  • Applied Physics Letters, Vol. 38, Issue 11
  • DOI: 10.1063/1.92179

Thermal conductivity of Si–Ge superlattices
journal, June 1997

  • Lee, S. -M.; Cahill, David G.; Venkatasubramanian, Rama
  • Applied Physics Letters, Vol. 70, Issue 22
  • DOI: 10.1063/1.118755

Ge-related faceting and segregation during the growth of metastable (GaAs)1−x(Ge2)x alloy layers by metal–organic vapor-phase epitaxy
journal, March 1999

  • Norman, A. G.; Olson, J. M.; Geisz, J. F.
  • Applied Physics Letters, Vol. 74, Issue 10
  • DOI: 10.1063/1.123557

Enhanced thermoelectric performance of rough silicon nanowires
journal, January 2008

  • Hochbaum, Allon I.; Chen, Renkun; Delgado, Raul Diaz
  • Nature, Vol. 451, Issue 7175, p. 163-167
  • DOI: 10.1038/nature06381

Thermal-conductivity measurements of GaAs/AlAs superlattices using a picosecond optical pump-and-probe technique
journal, March 1999


Analysis of heat flow in layered structures for time-domain thermoreflectance
journal, December 2004

  • Cahill, David G.
  • Review of Scientific Instruments, Vol. 75, Issue 12
  • DOI: 10.1063/1.1819431

Thermal conductivity and heat transfer in superlattices
journal, November 1997

  • Chen, G.; Neagu, M.
  • Applied Physics Letters, Vol. 71, Issue 19
  • DOI: 10.1063/1.120126

Pulse accumulation, radial heat conduction, and anisotropic thermal conductivity in pump-probe transient thermoreflectance
journal, November 2008

  • Schmidt, Aaron J.; Chen, Xiaoyuan; Chen, Gang
  • Review of Scientific Instruments, Vol. 79, Issue 11
  • DOI: 10.1063/1.3006335

Thermal boundary resistance
journal, July 1989


Use of quantum‐well superlattices to obtain a high figure of merit from nonconventional thermoelectric materials
journal, December 1993

  • Hicks, L. D.; Harman, T. C.; Dresselhaus, M. S.
  • Applied Physics Letters, Vol. 63, Issue 23
  • DOI: 10.1063/1.110207

Spectral mapping of thermal conductivity through nanoscale ballistic transport
journal, June 2015

  • Hu, Yongjie; Zeng, Lingping; Minnich, Austin J.
  • Nature Nanotechnology, Vol. 10, Issue 8
  • DOI: 10.1038/nnano.2015.109

Electron microscope studies of a Ge–GaAs superlattice grown by molecular beam epitaxy
journal, August 1983

  • Kuan, T. S.; Chang, C. ‐A.
  • Journal of Applied Physics, Vol. 54, Issue 8
  • DOI: 10.1063/1.332688

Thermal properties of AlAs/GaAs superlattices
journal, November 1987

  • Yao, Takafumi
  • Applied Physics Letters, Vol. 51, Issue 22
  • DOI: 10.1063/1.98526

Anisotropic Thermal Conductivity of Ge Quantum-Dot and Symmetrically Strained Si/Ge Superlattices
journal, March 2001

  • Liu, W. L.; Borca-Tasciuc, T.; Chen, G.
  • Journal of Nanoscience and Nanotechnology, Vol. 1, Issue 1
  • DOI: 10.1166/jnn.2001.013

Electronic structure at an abrupt GaAs–Ge interface
journal, July 1977

  • Baraff, G. A.; Appelbaum, Joel A.; Hamann, D. R.
  • Journal of Vacuum Science and Technology, Vol. 14, Issue 4
  • DOI: 10.1116/1.569411

Molecular beam epitaxy of Ge and Ga1−xAlxAs ultra thin film superlattices
journal, February 1979


Size and Interface Effects on Thermal Conductivity of Superlattices and Periodic Thin-Film Structures
journal, May 1997


Surface layer spinodal decomposition in In 1− x Ga x As y P 1− y and In 1− x Ga x As grown by hydride transport vapor‐phase epitaxy
journal, May 1985

  • Chu, S. N. G.; Nakahara, S.; Strege, K. E.
  • Journal of Applied Physics, Vol. 57, Issue 10
  • DOI: 10.1063/1.335368

High-Thermoelectric Performance of Nanostructured Bismuth Antimony Telluride Bulk Alloys
journal, May 2008


Thermal conductivity of individual silicon nanowires
journal, October 2003

  • Li, Deyu; Wu, Yiying; Kim, Philip
  • Applied Physics Letters, Vol. 83, Issue 14, p. 2934-2936
  • DOI: 10.1063/1.1616981

Monte Carlo study of non-diffusive relaxation of a transient thermal grating in thin membranes
journal, February 2016

  • Zeng, Lingping; Chiloyan, Vazrik; Huberman, Samuel
  • Applied Physics Letters, Vol. 108, Issue 6
  • DOI: 10.1063/1.4941766

Competitive evolution of the fine contrast modulation and CuPt ordering in InGaP/GaAs layers
journal, October 1996

  • Diéguez, A.; Peiró, F.; Cornet, A.
  • Journal of Applied Physics, Vol. 80, Issue 7
  • DOI: 10.1063/1.363332

    Works referencing / citing this record:

    Growth and in-plane undulations of GaAs/Ge superlattices on [001]-oriented Ge and GaAs substrates: formation of regular 3D island-in-network nanostructures
    journal, January 2018

    • Liu, Hongfei; Jin, Yunjiang; Lin, Ming
    • Journal of Materials Chemistry C, Vol. 6, Issue 47
    • DOI: 10.1039/c8tc04799e

    Luminescence of III-IV-V thin film alloys grown by metalorganic chemical vapor deposition
    journal, May 2018

    • Jia, Roger; Zhu, Tony; Bulović, Vladimir
    • Journal of Applied Physics, Vol. 123, Issue 17
    • DOI: 10.1063/1.5016443