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Title: Detection of charge density wave phase transitions at 1T-TaS 2/GaAs interfaces

The transition metal dichalcogenide 1T-TaS 2 is well known to harbor a rich variety of charge density wave (CDW) distortions which are correlated with underlying lattice atom modulations. The long range CDW phases extend throughout the whole crystal and terminate with charge displacements at the crystal boundaries. In this paper, we report on the transport properties and capacitance characteristics of the interface between freshly exfoliated flakes of 1T-TaS 2 in intimate van der Waals contact with n-type GaAs substrates. The extracted barrier parameters (ideality, barrier height, and built-in potential) experience pronounced changes across the Mott-CDW transition in the 1T-TaS 2. Finally, the CDW-induced changes in barrier properties are well described by a bond polarization model which upon decreasing temperature gives rise to an increased potential drop across the interfacial region due to the localization of carriers and a decreased dielectric constant.
Authors:
ORCiD logo [1] ; ORCiD logo [1] ;  [1] ; ORCiD logo [1]
  1. Univ. of Florida, Gainesville, FL (United States). Dept. of Physics
Publication Date:
Grant/Contract Number:
FG02-86ER45268; DMR-1305783
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 18; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Univ. of Florida, Gainesville, FL (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation (NSF)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; work functions; materials fabrication; capacitance; polarization; phase transitions; III-V semiconductors; charge density waves; interface structure; dielectric constant
OSTI Identifier:
1466214
Alternate Identifier(s):
OSTI ID: 1361870

Zhu, Xiaochen, Li, Ang J., Stewart, G. R., and Hebard, Arthur F.. Detection of charge density wave phase transitions at 1T-TaS2/GaAs interfaces. United States: N. p., Web. doi:10.1063/1.4982964.
Zhu, Xiaochen, Li, Ang J., Stewart, G. R., & Hebard, Arthur F.. Detection of charge density wave phase transitions at 1T-TaS2/GaAs interfaces. United States. doi:10.1063/1.4982964.
Zhu, Xiaochen, Li, Ang J., Stewart, G. R., and Hebard, Arthur F.. 2017. "Detection of charge density wave phase transitions at 1T-TaS2/GaAs interfaces". United States. doi:10.1063/1.4982964. https://www.osti.gov/servlets/purl/1466214.
@article{osti_1466214,
title = {Detection of charge density wave phase transitions at 1T-TaS2/GaAs interfaces},
author = {Zhu, Xiaochen and Li, Ang J. and Stewart, G. R. and Hebard, Arthur F.},
abstractNote = {The transition metal dichalcogenide 1T-TaS2 is well known to harbor a rich variety of charge density wave (CDW) distortions which are correlated with underlying lattice atom modulations. The long range CDW phases extend throughout the whole crystal and terminate with charge displacements at the crystal boundaries. In this paper, we report on the transport properties and capacitance characteristics of the interface between freshly exfoliated flakes of 1T-TaS2 in intimate van der Waals contact with n-type GaAs substrates. The extracted barrier parameters (ideality, barrier height, and built-in potential) experience pronounced changes across the Mott-CDW transition in the 1T-TaS2. Finally, the CDW-induced changes in barrier properties are well described by a bond polarization model which upon decreasing temperature gives rise to an increased potential drop across the interfacial region due to the localization of carriers and a decreased dielectric constant.},
doi = {10.1063/1.4982964},
journal = {Applied Physics Letters},
number = 18,
volume = 110,
place = {United States},
year = {2017},
month = {5}
}