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Title: Probing carbon impurities in hexagonal boron nitride epilayers

In this paper, carbon doped hexagonal boron nitride epilayers have been grown by metal organic chemical vapor deposition. Photocurrent excitation spectroscopy has been utilized to probe the energy levels associated with carbon impurities in hexagonal boron nitride (h-BN). The observed transition peaks in photocurrent excitation spectra correspond well to the energy positions of the bandgap, substitutional donors (C B, carbon impurities occupying boron sites), and substitutional acceptors (C N, carbon impurities occupying nitrogen sites). From the observed transition peak positions, the derived energy level of C B donors in h-BN is E D ~ 0.45 eV, which agrees well with the value deduced from the temperature dependent electrical resistivity. The present study further confirms that the room temperature bandgap of h-BN is about 6.42–6.45 eV, and the C N deep acceptors have an energy level of about 2.2–2.3 eV. Finally, the results also infer that carbon doping introduces both shallow donors (C B) and deep acceptors (C N) via self-compensation, and the energy level of carbon donors appears to be too deep to enable carbon as a viable candidate as an n-type dopant in h-BN epilayers.
Authors:
ORCiD logo [1] ; ORCiD logo [1] ; ORCiD logo [1] ; ORCiD logo [1]
  1. Texas Tech Univ., Lubbock, TX (United States). Dept. of Electrical and Computer Engineering
Publication Date:
Grant/Contract Number:
NA0002927; W911NF-16-1-0268
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 18; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Texas Tech Univ., Lubbock, TX (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA); US Army Research Office (ARO)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; doping; materials properties; photonic bandgap materials; electrical resistivity; III-V semiconductors; carbon; photoelectric conversion; semiconductor growth; band gap; activation energies
OSTI Identifier:
1466211
Alternate Identifier(s):
OSTI ID: 1361858

Uddin, M. R., Li, J., Lin, J. Y., and Jiang, H. X.. Probing carbon impurities in hexagonal boron nitride epilayers. United States: N. p., Web. doi:10.1063/1.4982647.
Uddin, M. R., Li, J., Lin, J. Y., & Jiang, H. X.. Probing carbon impurities in hexagonal boron nitride epilayers. United States. doi:10.1063/1.4982647.
Uddin, M. R., Li, J., Lin, J. Y., and Jiang, H. X.. 2017. "Probing carbon impurities in hexagonal boron nitride epilayers". United States. doi:10.1063/1.4982647. https://www.osti.gov/servlets/purl/1466211.
@article{osti_1466211,
title = {Probing carbon impurities in hexagonal boron nitride epilayers},
author = {Uddin, M. R. and Li, J. and Lin, J. Y. and Jiang, H. X.},
abstractNote = {In this paper, carbon doped hexagonal boron nitride epilayers have been grown by metal organic chemical vapor deposition. Photocurrent excitation spectroscopy has been utilized to probe the energy levels associated with carbon impurities in hexagonal boron nitride (h-BN). The observed transition peaks in photocurrent excitation spectra correspond well to the energy positions of the bandgap, substitutional donors (CB, carbon impurities occupying boron sites), and substitutional acceptors (CN, carbon impurities occupying nitrogen sites). From the observed transition peak positions, the derived energy level of CB donors in h-BN is ED ~ 0.45 eV, which agrees well with the value deduced from the temperature dependent electrical resistivity. The present study further confirms that the room temperature bandgap of h-BN is about 6.42–6.45 eV, and the CN deep acceptors have an energy level of about 2.2–2.3 eV. Finally, the results also infer that carbon doping introduces both shallow donors (CB) and deep acceptors (CN) via self-compensation, and the energy level of carbon donors appears to be too deep to enable carbon as a viable candidate as an n-type dopant in h-BN epilayers.},
doi = {10.1063/1.4982647},
journal = {Applied Physics Letters},
number = 18,
volume = 110,
place = {United States},
year = {2017},
month = {5}
}