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Title: Layer thickness dependent strain rate sensitivity of Cu/amorphous CuNb multilayer

We report strain rate sensitivity of crystalline materials is closely related to dislocation activity. In the absence of dislocations, amorphous alloys are usually considered to be strain rate insensitive. However, the strain rate sensitivity of crystalline/amorphous composites is rarely studied, especially at nanoscale. In this study, we show that the strain rate sensitivity of Cu/amorphous CuNb multilayers is layer thickness dependent. At small layer thickness (below 50 nm), the multilayers demonstrate limited strain rate sensitivity; at relatively large layer thickness (above 100 nm), the strain rate sensitivity of multilayers is close to that of the single layer Cu film. Finally, mechanisms that lead to size dependent variation of strain rate sensitivity in these multilayers are discussed.
Authors:
 [1] ;  [2] ;  [1] ;  [3] ;  [3] ;  [4] ; ORCiD logo [3]
  1. Texas A & M Univ., College Station, TX (United States). Department of Mechanical Engineering
  2. Shanghai Jiao Tong University, Shanghai (China). State Key Lab of Metal Matrix Composites, School of Materials Science and Engineering
  3. Purdue Univ., West Lafayette, IN (United States). School of Materials Engineering
  4. Purdue Univ., West Lafayette, IN (United States). School of Materials Engineering and School of Electrical and Computer Engineering
Publication Date:
Grant/Contract Number:
SC0016337
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 16; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Purdue Univ., West Lafayette, IN (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1466208
Alternate Identifier(s):
OSTI ID: 1361825

Fan, Z., Liu, Y., Xue, S., Rahimi, R. M., Bahr, D. F., Wang, H., and Zhang, X.. Layer thickness dependent strain rate sensitivity of Cu/amorphous CuNb multilayer. United States: N. p., Web. doi:10.1063/1.4980850.
Fan, Z., Liu, Y., Xue, S., Rahimi, R. M., Bahr, D. F., Wang, H., & Zhang, X.. Layer thickness dependent strain rate sensitivity of Cu/amorphous CuNb multilayer. United States. doi:10.1063/1.4980850.
Fan, Z., Liu, Y., Xue, S., Rahimi, R. M., Bahr, D. F., Wang, H., and Zhang, X.. 2017. "Layer thickness dependent strain rate sensitivity of Cu/amorphous CuNb multilayer". United States. doi:10.1063/1.4980850. https://www.osti.gov/servlets/purl/1466208.
@article{osti_1466208,
title = {Layer thickness dependent strain rate sensitivity of Cu/amorphous CuNb multilayer},
author = {Fan, Z. and Liu, Y. and Xue, S. and Rahimi, R. M. and Bahr, D. F. and Wang, H. and Zhang, X.},
abstractNote = {We report strain rate sensitivity of crystalline materials is closely related to dislocation activity. In the absence of dislocations, amorphous alloys are usually considered to be strain rate insensitive. However, the strain rate sensitivity of crystalline/amorphous composites is rarely studied, especially at nanoscale. In this study, we show that the strain rate sensitivity of Cu/amorphous CuNb multilayers is layer thickness dependent. At small layer thickness (below 50 nm), the multilayers demonstrate limited strain rate sensitivity; at relatively large layer thickness (above 100 nm), the strain rate sensitivity of multilayers is close to that of the single layer Cu film. Finally, mechanisms that lead to size dependent variation of strain rate sensitivity in these multilayers are discussed.},
doi = {10.1063/1.4980850},
journal = {Applied Physics Letters},
number = 16,
volume = 110,
place = {United States},
year = {2017},
month = {4}
}

Works referenced in this record:

An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments
journal, June 1992
  • Oliver, W. C.; Pharr, G. M.
  • Journal of Materials Research, Vol. 7, Issue 06, p. 1564-1583
  • DOI: 10.1557/JMR.1992.1564