High temperature efficient, stable Si wafer-based selective solar absorbers

Tian, Hao; Zhou, Zhiguang; Liu, Tianran; Karina, Cindy; Guler, Urcan; Shalaev, Vladimir; Bermel, Peter

doi:10.1063/1.4979510

Title: High temperature efficient, stable Si wafer-based selective solar absorbers

Abstract

Creating selective solar absorber systems using simple, stable structures capable of surviving high temperatures is essential for widespread adoption of efficient, high-temperature solar thermal technologies. In this study, semiconductor-metal tandem selective solar absorbers based on commercially available Si wafers are fabricated and measured at different high temperatures. High selectivity of the devices is obtained at temperature as high as 490 °C, and the structure is demonstrated to be mechanically and thermally stable even at slightly higher temperatures (up to 535 °C). Increased free carrier absorption and lattice absorption of Si are observed at elevated temperatures, which raise thermal re-radiation dramatically. In order to mitigate this effect, a thin Si film-based selective absorber has also been computationally designed and optimized, which is predicted to exhibit even higher thermal transfer efficiency (60–70%) at a wide range of solar concentrations (20–100 suns). In conclusion, the simple structure combined with the mechanical and thermal stability enables the low-cost Si substrate-based selective solar absorber to find wide applications in solar thermal energy conversion systems.

Authors:

^[1]; Zhou, Zhiguang ^[1]; Liu, Tianran ^[1]; Karina, Cindy ^[2];

^[1]; Shalaev, Vladimir ^[1];

^[1]

Purdue Univ., West Lafayette, IN (United States)
ETH (Swiss Federal Institute of Technology) Zurich, Zurich (Switzerland)

Publication Date:: Mon Apr 03 00:00:00 EDT 2017

Research Org.:: Stanford Univ., CA (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

OSTI Identifier:: 1466036

Alternate Identifier(s):: OSTI ID: 1361803

Grant/Contract Number:: EE0004946

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 110; Journal Issue: 14; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY

Citation Formats


                    Tian, Hao, Zhou, Zhiguang, Liu, Tianran, Karina, Cindy, Guler, Urcan, Shalaev, Vladimir, and Bermel, Peter. High temperature efficient, stable Si wafer-based selective solar absorbers.  United States: N. p., 2017. 
Web.  doi:10.1063/1.4979510.

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                    Tian, Hao, Zhou, Zhiguang, Liu, Tianran, Karina, Cindy, Guler, Urcan, Shalaev, Vladimir, & Bermel, Peter. High temperature efficient, stable Si wafer-based selective solar absorbers.  United States.  https://doi.org/10.1063/1.4979510

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                    Tian, Hao, Zhou, Zhiguang, Liu, Tianran, Karina, Cindy, Guler, Urcan, Shalaev, Vladimir, and Bermel, Peter. Mon .  
"High temperature efficient, stable Si wafer-based selective solar absorbers".  United States.  https://doi.org/10.1063/1.4979510.  https://www.osti.gov/servlets/purl/1466036.

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@article{osti_1466036,

  title        = {High temperature efficient, stable Si wafer-based selective solar absorbers},

  author       = {Tian, Hao and Zhou, Zhiguang and Liu, Tianran and Karina, Cindy and Guler, Urcan and Shalaev, Vladimir and Bermel, Peter},

  abstractNote = {Creating selective solar absorber systems using simple, stable structures capable of surviving high temperatures is essential for widespread adoption of efficient, high-temperature solar thermal technologies. In this study, semiconductor-metal tandem selective solar absorbers based on commercially available Si wafers are fabricated and measured at different high temperatures. High selectivity of the devices is obtained at temperature as high as 490 °C, and the structure is demonstrated to be mechanically and thermally stable even at slightly higher temperatures (up to 535 °C). Increased free carrier absorption and lattice absorption of Si are observed at elevated temperatures, which raise thermal re-radiation dramatically. In order to mitigate this effect, a thin Si film-based selective absorber has also been computationally designed and optimized, which is predicted to exhibit even higher thermal transfer efficiency (60–70%) at a wide range of solar concentrations (20–100 suns). In conclusion, the simple structure combined with the mechanical and thermal stability enables the low-cost Si substrate-based selective solar absorber to find wide applications in solar thermal energy conversion systems.},

  doi          = {10.1063/1.4979510},

  journal      = {Applied Physics Letters},

  number       = 14,

  volume       = 110,

  place        = {United States},

  year         = {Mon Apr 03 00:00:00 EDT 2017},

  month        = {Mon Apr 03 00:00:00 EDT 2017}

}

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Works referencing / citing this record:

Hybrid Solar Absorber–Emitter by Coherence‐Enhanced Absorption for Improved Solar Thermophotovoltaic Conversion
journal, October 2018

Wang, Yang; Zhou, Lin; Zhang, Ye
Advanced Optical Materials, Vol. 6, Issue 24
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Title: High temperature efficient, stable Si wafer-based selective solar absorbers

Abstract

Citation Formats

Optical performance of absorber-reflector combinations for photothermal solar energy conversion journal, January 1978

High-performance flat-panel solar thermoelectric generators with high thermal concentration journal, May 2011

High efficiency rare-earth emitter for thermophotovoltaic applications journal, September 2014

Mid-infrared optical properties of thin films of aluminum oxide, titanium dioxide, silicon dioxide, aluminum nitride, and silicon nitride journal, January 2012

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Coherent spontaneous emission of light by thermal sources journal, April 2004

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Deposition of semiconductor films with high solar absorptivity journal, January 1975

Optical properties of metallic films for vertical-cavity optoelectronic devices journal, January 1998

Chemical vapor deposition of thin semiconductor films for solar energy conversion journal, December 1976

Solar thermophotovoltaics: reshaping the solar spectrum journal, January 2016

Textured thin‐film Si solar selective absorbers using reactive ion etching journal, October 1980

Black germanium solar selective absorber surfaces journal, October 1978

Perfect selective metamaterial solar absorbers journal, January 2013

Design and global optimization of high-efficiency thermophotovoltaic systems journal, January 2010

Textured silicon: A selective absorber for solar thermal conversion journal, November 1979

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Large-Area Free-Standing Ultrathin Single-Crystal Silicon as Processable Materials journal, August 2013

Optical properties of ordered carbon nanotube arrays grown in porous anodic alumina templates journal, January 2013

Ni-Al2O3 selective cermet coatings for photothermal conversion up to 500°C journal, September 1990

Two-dimensional tungsten photonic crystals as selective thermal emitters journal, May 2008

Selective absorber using glow-discharge amorphous silicon for solar photothermal conversion journal, October 1980

Photonic Crystal Selective Structures for Solar Thermophotovoltaics journal, December 2015

Spectral Emissivity of Silicon journal, March 1967

Radiative Processes in Astrophysics book, January 1985

Integrated photonic crystal selective emitter for thermophotovoltaics journal, January 2016

Recent developments in high-temperature photonic crystals for energy conversion journal, January 2012

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Radiative Processes in Astrophysics journal, June 1981

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Hybrid Solar Absorber–Emitter by Coherence‐Enhanced Absorption for Improved Solar Thermophotovoltaic Conversion journal, October 2018

Optical performance of absorber-reflector combinations for photothermal solar energy conversion
journal, January 1978

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Textured silicon: A selective absorber for solar thermal conversion
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Large-Area Free-Standing Ultrathin Single-Crystal Silicon as Processable Materials
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Optical properties of ordered carbon nanotube arrays grown in porous anodic alumina templates
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Ni-Al2O3 selective cermet coatings for photothermal conversion up to 500°C
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Selective absorber using glow-discharge amorphous silicon for solar photothermal conversion
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Radiative Processes in Astrophysics
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Radiative Processes in Astrophysics
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