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Title: Shot noise detection in hBN-based tunnel junctions

Abstract

High quality Au/hBN/Au tunnel devices are fabricated using transferred atomically thin hexagonal boron nitride as the tunneling barrier. All tunnel junctions show tunneling resistance on the order of several kX/lm2. Ohmic I-V curves at small bias with no signs of resonances indicate the sparsity of defects. Tunneling current shot noise is measured in these devices, and the excess shot noise shows consistency with theoretical expectations. Furthermore, these results show that atomically thin hBN is an excellent tunnel barrier, especially for the study of shot noise properties, and this can enable the study of the tunneling density of states and shot noise spectroscopy in more complex systems.

Authors:
 [1];  [1];  [2];  [2]; ORCiD logo [1]
  1. Rice Univ., Houston, TX (United States)
  2. National Institute for Materials Science, Ibaraki (Japan)
Publication Date:
Research Org.:
William Marsh Rice Univ., Houston, TX (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1466026
Alternate Identifier(s):
OSTI ID: 1361788
Grant/Contract Number:  
FG02-06ER46337
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 13; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Zhou, Panpan, Hardy, Will J., Watanabe, Kenji, Taniguchi, Takashi, and Natelson, Douglas. Shot noise detection in hBN-based tunnel junctions. United States: N. p., 2017. Web. doi:10.1063/1.4978693.
Zhou, Panpan, Hardy, Will J., Watanabe, Kenji, Taniguchi, Takashi, & Natelson, Douglas. Shot noise detection in hBN-based tunnel junctions. United States. doi:10.1063/1.4978693.
Zhou, Panpan, Hardy, Will J., Watanabe, Kenji, Taniguchi, Takashi, and Natelson, Douglas. Mon . "Shot noise detection in hBN-based tunnel junctions". United States. doi:10.1063/1.4978693. https://www.osti.gov/servlets/purl/1466026.
@article{osti_1466026,
title = {Shot noise detection in hBN-based tunnel junctions},
author = {Zhou, Panpan and Hardy, Will J. and Watanabe, Kenji and Taniguchi, Takashi and Natelson, Douglas},
abstractNote = {High quality Au/hBN/Au tunnel devices are fabricated using transferred atomically thin hexagonal boron nitride as the tunneling barrier. All tunnel junctions show tunneling resistance on the order of several kX/lm2. Ohmic I-V curves at small bias with no signs of resonances indicate the sparsity of defects. Tunneling current shot noise is measured in these devices, and the excess shot noise shows consistency with theoretical expectations. Furthermore, these results show that atomically thin hBN is an excellent tunnel barrier, especially for the study of shot noise properties, and this can enable the study of the tunneling density of states and shot noise spectroscopy in more complex systems.},
doi = {10.1063/1.4978693},
journal = {Applied Physics Letters},
number = 13,
volume = 110,
place = {United States},
year = {2017},
month = {3}
}

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    Works referencing / citing this record:

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