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Title: Growth and characterization of TbAs films

We report on the molecular beam epitaxy growth and characterization of TbAs films. In situ reflection high energy electron diffraction and ex situ high resolution X-ray diffraction, reciprocal space mapping, and both scanning and transmission electron microscopy are used to confirm the complete film growth and study the films’ morphology. Spectrophotometry measurements provide the energy of optical transitions, revealing a red shift in optical band gap with increasing thickness. The Hall effect measurements show temperature insensitive carrier concentrations, resistivities, and mobilities. The carrier concentration decreases and resistivity increases with increasing film thickness; mobility appears thickness independent. Here, the films’ reflectivity, obtained via Fourier transform infrared spectroscopy, shows a possible Drude edge that differs from the trend of other lanthanide monopnictides. Lastly, these measurements show that TbAs is a degenerately doped semiconductor with a combination of electronic and optical properties that is dissimilar to other lanthanide monopnictides.
Authors:
 [1] ;  [1] ; ORCiD logo [1] ; ORCiD logo [1]
  1. Univ. of Delaware, Newark, DE (United States). Department of Materials Science and Engineering
Publication Date:
Grant/Contract Number:
SC0008166
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 20; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Univ. of Delaware, Newark, DE (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
OSTI Identifier:
1465794
Alternate Identifier(s):
OSTI ID: 1332368

Bomberger, Cory C., Tew, Bo E., Lewis, Matthew R., and Zide, Joshua M. O.. Growth and characterization of TbAs films. United States: N. p., Web. doi:10.1063/1.4967841.
Bomberger, Cory C., Tew, Bo E., Lewis, Matthew R., & Zide, Joshua M. O.. Growth and characterization of TbAs films. United States. doi:10.1063/1.4967841.
Bomberger, Cory C., Tew, Bo E., Lewis, Matthew R., and Zide, Joshua M. O.. 2016. "Growth and characterization of TbAs films". United States. doi:10.1063/1.4967841. https://www.osti.gov/servlets/purl/1465794.
@article{osti_1465794,
title = {Growth and characterization of TbAs films},
author = {Bomberger, Cory C. and Tew, Bo E. and Lewis, Matthew R. and Zide, Joshua M. O.},
abstractNote = {We report on the molecular beam epitaxy growth and characterization of TbAs films. In situ reflection high energy electron diffraction and ex situ high resolution X-ray diffraction, reciprocal space mapping, and both scanning and transmission electron microscopy are used to confirm the complete film growth and study the films’ morphology. Spectrophotometry measurements provide the energy of optical transitions, revealing a red shift in optical band gap with increasing thickness. The Hall effect measurements show temperature insensitive carrier concentrations, resistivities, and mobilities. The carrier concentration decreases and resistivity increases with increasing film thickness; mobility appears thickness independent. Here, the films’ reflectivity, obtained via Fourier transform infrared spectroscopy, shows a possible Drude edge that differs from the trend of other lanthanide monopnictides. Lastly, these measurements show that TbAs is a degenerately doped semiconductor with a combination of electronic and optical properties that is dissimilar to other lanthanide monopnictides.},
doi = {10.1063/1.4967841},
journal = {Applied Physics Letters},
number = 20,
volume = 109,
place = {United States},
year = {2016},
month = {11}
}