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Title: Growth and characterization of ErAs:GaBi xAs 1-x

We explore the growth and characterization of ErAs:GaBiAs as a candidate material for terahertz generation and detection via photoconductive switches. Spectrophotometry shows that the incorporation of small amounts of bismuth causes a reduction in the band gap, making these materials compatible with fiber-coupled lasers. ErAs pins the Fermi level within the band gap, causing high dark resistance while maintaining high mobility, shown by Hall effect measurements. Lastly, transient absorption (optical pump, optical probe) measurements show that the ErAs provides a carrier recombination pathway, causing short carrier lifetimes. These material properties make ErAs:GaBiAs an interesting choice for fiber-coupled photoconductive switches.
Authors:
 [1] ;  [2] ; ORCiD logo [1] ;  [1] ;  [1] ;  [1] ;  [3] ;  [1]
  1. Univ. of Delaware, Newark, DE (United States). Dept. of Materials Science and Engineering
  2. Univ. of Delaware, Newark, DE (United States). Dept. of of Physics and Astronomy
  3. Univ. of Delaware, Newark, DE (United States). Dept. of Physics and Astronomy; Univ. of Delaware, Newark, DE (United States). Dept. of Chemistry and Biochemistry
Publication Date:
Grant/Contract Number:
SC0008166; NNX15AI19H
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 17; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Univ. of Delaware, Newark, DE (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation (NSF); National Aeronautic and Space Administration (NASA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1465787
Alternate Identifier(s):
OSTI ID: 1330121