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Title: Large-area and bright pulsed electroluminescence in monolayer semiconductors

Transition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostructures. Here, we demonstrate a transient-mode electroluminescent device based on transition-metal dichalcogenide monolayers (MoS 2, WS 2, MoSe 2, and WSe 2) to overcome these problems. Electroluminescence from this dopant-free two-terminal device is obtained by applying an AC voltage between the gate and the semiconductor. Notably, the electroluminescence intensity is weakly dependent on the Schottky barrier height or polarity of the contact. We fabricate a monolayer seven-segment display and achieve the first transparent and bright millimeter-scale light-emitting monolayer semiconductor device.
Authors:
ORCiD logo [1] ; ORCiD logo [1] ; ORCiD logo [1] ; ORCiD logo [1] ; ORCiD logo [2] ; ORCiD logo [3] ; ORCiD logo [4] ; ORCiD logo [2] ; ORCiD logo [1]
  1. Univ. of California, Berkeley, CA (United States). Electrical Engineering and Computer Sciences; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
  2. Univ. of California, Berkeley, CA (United States). Electrical Engineering and Computer Sciences
  3. King Abdullah Univ. of Science & Technology (KAUST), Thuwal (Saudi Arabia). Computer, Electrical and Mathematical Sciences and Engineering Division
  4. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
Publication Date:
Grant/Contract Number:
AC02-05CH11231; 1623038
Type:
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 9; Journal Issue: 1; Related Information: © 2018 The Author(s).; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Research Org:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 42 ENGINEERING
OSTI Identifier:
1465474

Lien, Der-Hsien, Amani, Matin, Desai, Sujay B., Ahn, Geun Ho, Han, Kevin, He, Jr-Hau, Ager, Joel W., Wu, Ming C., and Javey, Ali. Large-area and bright pulsed electroluminescence in monolayer semiconductors. United States: N. p., Web. doi:10.1038/s41467-018-03218-8.
Lien, Der-Hsien, Amani, Matin, Desai, Sujay B., Ahn, Geun Ho, Han, Kevin, He, Jr-Hau, Ager, Joel W., Wu, Ming C., & Javey, Ali. Large-area and bright pulsed electroluminescence in monolayer semiconductors. United States. doi:10.1038/s41467-018-03218-8.
Lien, Der-Hsien, Amani, Matin, Desai, Sujay B., Ahn, Geun Ho, Han, Kevin, He, Jr-Hau, Ager, Joel W., Wu, Ming C., and Javey, Ali. 2018. "Large-area and bright pulsed electroluminescence in monolayer semiconductors". United States. doi:10.1038/s41467-018-03218-8. https://www.osti.gov/servlets/purl/1465474.
@article{osti_1465474,
title = {Large-area and bright pulsed electroluminescence in monolayer semiconductors},
author = {Lien, Der-Hsien and Amani, Matin and Desai, Sujay B. and Ahn, Geun Ho and Han, Kevin and He, Jr-Hau and Ager, Joel W. and Wu, Ming C. and Javey, Ali},
abstractNote = {Transition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostructures. Here, we demonstrate a transient-mode electroluminescent device based on transition-metal dichalcogenide monolayers (MoS2, WS2, MoSe2, and WSe2) to overcome these problems. Electroluminescence from this dopant-free two-terminal device is obtained by applying an AC voltage between the gate and the semiconductor. Notably, the electroluminescence intensity is weakly dependent on the Schottky barrier height or polarity of the contact. We fabricate a monolayer seven-segment display and achieve the first transparent and bright millimeter-scale light-emitting monolayer semiconductor device.},
doi = {10.1038/s41467-018-03218-8},
journal = {Nature Communications},
number = 1,
volume = 9,
place = {United States},
year = {2018},
month = {3}
}

Works referenced in this record:

Atomically Thin MoS2 A New Direct-Gap Semiconductor
journal, September 2010

Single-layer MoS2 transistors
journal, January 2011
  • Radisavljevic, B.; Radenovic, A.; Brivio, J.
  • Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150
  • DOI: 10.1038/nnano.2010.279