Low dissipation spectral filtering using a field-effect tunable III–V hybrid metasurface

Journal Article · 06 August 2018 · Applied Physics Letters

DOI: https://doi.org/10.1063/1.5042662 · OSTI ID:1465384

Sarma, Raktim ^[1]; Campione, Salvatore  ^[1]; Goldflam, Michael ^[1]; Shank, Joshua ^[1]; Noh, Jinhyun ^[2]; Smith, Sean ^[1]; Ye, Peide D. ^[2]; Sinclair, Michael ^[1]; Klem, John ^[1]; Wendt, Joel ^[1]; Ruiz, Isaac ^[1]; Howell, Stephen W. ^[1]; Brener, Igal  ^[1]

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1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
2. Purdue Univ., West Lafayette, IN (United States)

Considering the power constrained scaling of silicon complementary metal-oxide-semiconductor technology, the use of high mobility III–V compound semiconductors such as In_0.53Ga_0.47As in conjunction with high-κ dielectrics is becoming a promising option for future n-type metal-oxide-semiconductor field-effect-transistors. Development of low dissipation field-effect tunable III–V based photonic devices integrated with high-κ dielectrics is therefore very appealing from a technological perspective. In this work, we present an experimental realization of a monolithically integrable, field-effect-tunable, III–V hybrid metasurface operating at long-wave-infrared spectral bands. Here, our device relies on strong light-matter coupling between epsilon-near-zero (ENZ) modes of an ultra-thin In_0.53Ga_0.47As layer and the dipole resonances of a complementary plasmonic metasurface.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE National Nuclear Security Administration (NNSA)
• Grant/Contract Number: AC04-94AL85000; NA0003525
• OSTI ID: 1465384
• Alternate ID(s): OSTI ID: 1463755
• Report Number(s): SAND-2018-8724J; 666833
• Journal Information: Applied Physics Letters, Vol. 113, Issue 6; ISSN 0003-6951
• Publisher: American Institute of Physics (AIP)Copyright Statement
• Country of Publication: United States
• Language: English