Low dissipation spectral filtering using a field-effect tunable III–V hybrid metasurface
Abstract
Considering the power constrained scaling of silicon complementary metal-oxide-semiconductor technology, the use of high mobility III–V compound semiconductors such as In0.53Ga0.47As in conjunction with high-κ dielectrics is becoming a promising option for future n-type metal-oxide-semiconductor field-effect-transistors. Development of low dissipation field-effect tunable III–V based photonic devices integrated with high-κ dielectrics is therefore very appealing from a technological perspective. In this work, we present an experimental realization of a monolithically integrable, field-effect-tunable, III–V hybrid metasurface operating at long-wave-infrared spectral bands. Here, our device relies on strong light-matter coupling between epsilon-near-zero (ENZ) modes of an ultra-thin In0.53Ga0.47As layer and the dipole resonances of a complementary plasmonic metasurface.
- Authors:
-
[1];
[1]
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Purdue Univ., West Lafayette, IN (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1465384
- Alternate Identifier(s):
- OSTI ID: 1463755
- Report Number(s):
- SAND-2018-8724J
Journal ID: ISSN 0003-6951; 666833
- Grant/Contract Number:
- AC04-94AL85000; NA0003525
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 113; Journal Issue: 6; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Sarma, Raktim, Campione, Salvatore, Goldflam, Michael, Shank, Joshua, Noh, Jinhyun, Smith, Sean, Ye, Peide D., Sinclair, Michael, Klem, John, Wendt, Joel, Ruiz, Isaac, Howell, Stephen W., and Brener, Igal. Low dissipation spectral filtering using a field-effect tunable III–V hybrid metasurface. United States: N. p., 2018.
Web. doi:10.1063/1.5042662.
Sarma, Raktim, Campione, Salvatore, Goldflam, Michael, Shank, Joshua, Noh, Jinhyun, Smith, Sean, Ye, Peide D., Sinclair, Michael, Klem, John, Wendt, Joel, Ruiz, Isaac, Howell, Stephen W., & Brener, Igal. Low dissipation spectral filtering using a field-effect tunable III–V hybrid metasurface. United States. https://doi.org/10.1063/1.5042662
Sarma, Raktim, Campione, Salvatore, Goldflam, Michael, Shank, Joshua, Noh, Jinhyun, Smith, Sean, Ye, Peide D., Sinclair, Michael, Klem, John, Wendt, Joel, Ruiz, Isaac, Howell, Stephen W., and Brener, Igal. Mon .
"Low dissipation spectral filtering using a field-effect tunable III–V hybrid metasurface". United States. https://doi.org/10.1063/1.5042662. https://www.osti.gov/servlets/purl/1465384.
@article{osti_1465384,
title = {Low dissipation spectral filtering using a field-effect tunable III–V hybrid metasurface},
author = {Sarma, Raktim and Campione, Salvatore and Goldflam, Michael and Shank, Joshua and Noh, Jinhyun and Smith, Sean and Ye, Peide D. and Sinclair, Michael and Klem, John and Wendt, Joel and Ruiz, Isaac and Howell, Stephen W. and Brener, Igal},
abstractNote = {Considering the power constrained scaling of silicon complementary metal-oxide-semiconductor technology, the use of high mobility III–V compound semiconductors such as In0.53Ga0.47As in conjunction with high-κ dielectrics is becoming a promising option for future n-type metal-oxide-semiconductor field-effect-transistors. Development of low dissipation field-effect tunable III–V based photonic devices integrated with high-κ dielectrics is therefore very appealing from a technological perspective. In this work, we present an experimental realization of a monolithically integrable, field-effect-tunable, III–V hybrid metasurface operating at long-wave-infrared spectral bands. Here, our device relies on strong light-matter coupling between epsilon-near-zero (ENZ) modes of an ultra-thin In0.53Ga0.47As layer and the dipole resonances of a complementary plasmonic metasurface.},
doi = {10.1063/1.5042662},
journal = {Applied Physics Letters},
number = 6,
volume = 113,
place = {United States},
year = {Mon Aug 06 00:00:00 EDT 2018},
month = {Mon Aug 06 00:00:00 EDT 2018}
}
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