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This content will become publicly available on August 6, 2019

Title: Low dissipation spectral filtering using a field-effect tunable III–V hybrid metasurface

Considering the power constrained scaling of silicon complementary metal-oxide-semiconductor technology, the use of high mobility III–V compound semiconductors such as In 0.53Ga 0.47As in conjunction with high-κ dielectrics is becoming a promising option for future n-type metal-oxide-semiconductor field-effect-transistors. Development of low dissipation field-effect tunable III–V based photonic devices integrated with high-κ dielectrics is therefore very appealing from a technological perspective. In this work, we present an experimental realization of a monolithically integrable, field-effect-tunable, III–V hybrid metasurface operating at long-wave-infrared spectral bands. Here, our device relies on strong light-matter coupling between epsilon-near-zero (ENZ) modes of an ultra-thin In 0.53Ga 0.47As layer and the dipole resonances of a complementary plasmonic metasurface.
Authors:
 [1] ; ORCiD logo [1] ;  [1] ;  [1] ;  [2] ;  [1] ;  [2] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ; ORCiD logo [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Purdue Univ., West Lafayette, IN (United States)
Publication Date:
Report Number(s):
SAND-2018-8724J
Journal ID: ISSN 0003-6951; 666833
Grant/Contract Number:
AC04-94AL85000; NA0003525
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 113; Journal Issue: 6; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
OSTI Identifier:
1465384
Alternate Identifier(s):
OSTI ID: 1463755