Low dissipation spectral filtering using a field-effect tunable III–V hybrid metasurface

Sarma, Raktim; Campione, Salvatore; Goldflam, Michael; Shank, Joshua; Noh, Jinhyun; Smith, Sean; Ye, Peide D.; Sinclair, Michael; Klem, John; Wendt, Joel; Ruiz, Isaac; Howell, Stephen W.; Brener, Igal

doi:10.1063/1.5042662

Title: Low dissipation spectral filtering using a field-effect tunable III–V hybrid metasurface

Abstract

Considering the power constrained scaling of silicon complementary metal-oxide-semiconductor technology, the use of high mobility III–V compound semiconductors such as In_0.53Ga_0.47As in conjunction with high-κ dielectrics is becoming a promising option for future n-type metal-oxide-semiconductor field-effect-transistors. Development of low dissipation field-effect tunable III–V based photonic devices integrated with high-κ dielectrics is therefore very appealing from a technological perspective. In this work, we present an experimental realization of a monolithically integrable, field-effect-tunable, III–V hybrid metasurface operating at long-wave-infrared spectral bands. Here, our device relies on strong light-matter coupling between epsilon-near-zero (ENZ) modes of an ultra-thin In_0.53Ga_0.47As layer and the dipole resonances of a complementary plasmonic metasurface.

Authors:

Sarma, Raktim ^[1];

^[1]; Goldflam, Michael ^[1]; Shank, Joshua ^[1]; Noh, Jinhyun ^[2]; Smith, Sean ^[1]; Ye, Peide D. ^[2]; Sinclair, Michael ^[1]; Klem, John ^[1]; Wendt, Joel ^[1]; Ruiz, Isaac ^[1]; Howell, Stephen W. ^[1];

^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Purdue Univ., West Lafayette, IN (United States)

Publication Date:: 2018-08-06

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1465384

Alternate Identifier(s):: OSTI ID: 1463755

Report Number(s):: SAND-2018-8724J
Journal ID: ISSN 0003-6951; 666833

Grant/Contract Number:: AC04-94AL85000; NA0003525

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 113; Journal Issue: 6; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats


                    Sarma, Raktim, Campione, Salvatore, Goldflam, Michael, Shank, Joshua, Noh, Jinhyun, Smith, Sean, Ye, Peide D., Sinclair, Michael, Klem, John, Wendt, Joel, Ruiz, Isaac, Howell, Stephen W., and Brener, Igal. Low dissipation spectral filtering using a field-effect tunable III–V hybrid metasurface.  United States: N. p., 2018. 
Web.  doi:10.1063/1.5042662.

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                    Sarma, Raktim, Campione, Salvatore, Goldflam, Michael, Shank, Joshua, Noh, Jinhyun, Smith, Sean, Ye, Peide D., Sinclair, Michael, Klem, John, Wendt, Joel, Ruiz, Isaac, Howell, Stephen W., & Brener, Igal. Low dissipation spectral filtering using a field-effect tunable III–V hybrid metasurface.  United States.  https://doi.org/10.1063/1.5042662

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                    Sarma, Raktim, Campione, Salvatore, Goldflam, Michael, Shank, Joshua, Noh, Jinhyun, Smith, Sean, Ye, Peide D., Sinclair, Michael, Klem, John, Wendt, Joel, Ruiz, Isaac, Howell, Stephen W., and Brener, Igal. Mon .  
"Low dissipation spectral filtering using a field-effect tunable III–V hybrid metasurface".  United States.  https://doi.org/10.1063/1.5042662.  https://www.osti.gov/servlets/purl/1465384.

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@article{osti_1465384,

  title        = {Low dissipation spectral filtering using a field-effect tunable III–V hybrid metasurface},

  author       = {Sarma, Raktim and Campione, Salvatore and Goldflam, Michael and Shank, Joshua and Noh, Jinhyun and Smith, Sean and Ye, Peide D. and Sinclair, Michael and Klem, John and Wendt, Joel and Ruiz, Isaac and Howell, Stephen W. and Brener, Igal},

  abstractNote = {Considering the power constrained scaling of silicon complementary metal-oxide-semiconductor technology, the use of high mobility III–V compound semiconductors such as In0.53Ga0.47As in conjunction with high-κ dielectrics is becoming a promising option for future n-type metal-oxide-semiconductor field-effect-transistors. Development of low dissipation field-effect tunable III–V based photonic devices integrated with high-κ dielectrics is therefore very appealing from a technological perspective. In this work, we present an experimental realization of a monolithically integrable, field-effect-tunable, III–V hybrid metasurface operating at long-wave-infrared spectral bands. Here, our device relies on strong light-matter coupling between epsilon-near-zero (ENZ) modes of an ultra-thin In0.53Ga0.47As layer and the dipole resonances of a complementary plasmonic metasurface.},

  doi          = {10.1063/1.5042662},

  journal      = {Applied Physics Letters},

  number       = 6,

  volume       = 113,

  place        = {United States},

  year         = {2018},

  month        = {8}

}

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Title: Low dissipation spectral filtering using a field-effect tunable III–V hybrid metasurface

Abstract

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Ultrawide thermal free-carrier tuning of dielectric antennas coupled to epsilon-near-zero substrates
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