Compact epsilon-near-zero silicon photonic phase modulators
Abstract
In this study, we analyze a compact silicon photonic phase modulator at 1.55 μm using epsilon-near-zero transparent conducting oxide (TCO) films. The operating principle of the non-resonant phase modulator is field-effect carrier density modulation in a thin TCO film deposited on top of a passive silicon waveguide with a CMOS-compatible fabrication process. We compare phase modulator performance using both indium oxide (In2O3) and cadmium oxide (CdO) TCO materials. Our findings show that practical phase modulation can be achieved only when using high-mobility (i.e. low-loss) epsilon-near-zero materials such as CdO. The CdO-based phase modulator has a figure of merit of 17.1°/dB in a compact 5 μm length. This figure of merit can be increased further through the proper selection of high-mobility TCOs, opening a path for device miniaturization and increased phase shifts.
- Authors:
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1463368
- Alternate Identifier(s):
- OSTI ID: 1465380
- Report Number(s):
- SAND-2018-8064J
Journal ID: ISSN 1094-4087; OPEXFF
- Grant/Contract Number:
- NA0003525; AC04-94AL85000
- Resource Type:
- Published Article
- Journal Name:
- Optics Express
- Additional Journal Information:
- Journal Name: Optics Express Journal Volume: 26 Journal Issue: 17; Journal ID: ISSN 1094-4087
- Publisher:
- Optical Society of America (OSA)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 47 OTHER INSTRUMENTATION; phase modulation; modulators; waveguide modulators; plasmonics
Citation Formats
Reines, Isak C., Wood, Michael G., Luk, Ting S., Serkland, Darwin K., and Campione, Salvatore. Compact epsilon-near-zero silicon photonic phase modulators. United States: N. p., 2018.
Web. doi:10.1364/OE.26.021594.
Reines, Isak C., Wood, Michael G., Luk, Ting S., Serkland, Darwin K., & Campione, Salvatore. Compact epsilon-near-zero silicon photonic phase modulators. United States. https://doi.org/10.1364/OE.26.021594
Reines, Isak C., Wood, Michael G., Luk, Ting S., Serkland, Darwin K., and Campione, Salvatore. Tue .
"Compact epsilon-near-zero silicon photonic phase modulators". United States. https://doi.org/10.1364/OE.26.021594.
@article{osti_1463368,
title = {Compact epsilon-near-zero silicon photonic phase modulators},
author = {Reines, Isak C. and Wood, Michael G. and Luk, Ting S. and Serkland, Darwin K. and Campione, Salvatore},
abstractNote = {In this study, we analyze a compact silicon photonic phase modulator at 1.55 μm using epsilon-near-zero transparent conducting oxide (TCO) films. The operating principle of the non-resonant phase modulator is field-effect carrier density modulation in a thin TCO film deposited on top of a passive silicon waveguide with a CMOS-compatible fabrication process. We compare phase modulator performance using both indium oxide (In2O3) and cadmium oxide (CdO) TCO materials. Our findings show that practical phase modulation can be achieved only when using high-mobility (i.e. low-loss) epsilon-near-zero materials such as CdO. The CdO-based phase modulator has a figure of merit of 17.1°/dB in a compact 5 μm length. This figure of merit can be increased further through the proper selection of high-mobility TCOs, opening a path for device miniaturization and increased phase shifts.},
doi = {10.1364/OE.26.021594},
journal = {Optics Express},
number = 17,
volume = 26,
place = {United States},
year = {Tue Aug 07 00:00:00 EDT 2018},
month = {Tue Aug 07 00:00:00 EDT 2018}
}
https://doi.org/10.1364/OE.26.021594
Web of Science
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