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Title: Phase-transition–induced p-n junction in single halide perovskite nanowire

Abstract

Semiconductor p-n junctions are fundamental building blocks for modern optical and electronic devices. The p- and n-type regions are typically created by chemical doping process. Here we show that in the new class of halide perovskite semiconductors, the p-n junctions can be readily induced through a localized thermal-driven phase transition. We demonstrate this p-n junction formation in a single-crystalline halide perovskite CsSnI 3 nanowire (NW). This material undergoes a phase transition from a double-chain yellow (Y) phase to an orthorhombic black (B) phase. The formation energies of the cation and anion vacancies in these two phases are significantly different, which leads to n- and p- type electrical characteristics for Y and B phases, respectively. Interface formation between these two phases and directional interface propagation within a single NW are directly observed under cathodoluminescence (CL) microscopy. Current rectification is demonstrated for the p-n junction formed with this localized thermal-driven phase transition.

Authors:
; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1465256
Alternate Identifier(s):
OSTI ID: 1530375
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Published Article
Journal Name:
Proceedings of the National Academy of Sciences of the United States of America
Additional Journal Information:
Journal Name: Proceedings of the National Academy of Sciences of the United States of America Journal Volume: 115 Journal Issue: 36; Journal ID: ISSN 0027-8424
Publisher:
Proceedings of the National Academy of Sciences
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; halide perovskite nanowire; heterostructure; phase transition; p-n junction; electrical transport

Citation Formats

Kong, Qiao, Lee, Woochul, Lai, Minliang, Bischak, Connor G., Gao, Guoping, Wong, Andrew B., Lei, Teng, Yu, Yi, Wang, Lin-Wang, Ginsberg, Naomi S., and Yang, Peidong. Phase-transition–induced p-n junction in single halide perovskite nanowire. United States: N. p., 2018. Web. doi:10.1073/pnas.1806515115.
Kong, Qiao, Lee, Woochul, Lai, Minliang, Bischak, Connor G., Gao, Guoping, Wong, Andrew B., Lei, Teng, Yu, Yi, Wang, Lin-Wang, Ginsberg, Naomi S., & Yang, Peidong. Phase-transition–induced p-n junction in single halide perovskite nanowire. United States. doi:10.1073/pnas.1806515115.
Kong, Qiao, Lee, Woochul, Lai, Minliang, Bischak, Connor G., Gao, Guoping, Wong, Andrew B., Lei, Teng, Yu, Yi, Wang, Lin-Wang, Ginsberg, Naomi S., and Yang, Peidong. Mon . "Phase-transition–induced p-n junction in single halide perovskite nanowire". United States. doi:10.1073/pnas.1806515115.
@article{osti_1465256,
title = {Phase-transition–induced p-n junction in single halide perovskite nanowire},
author = {Kong, Qiao and Lee, Woochul and Lai, Minliang and Bischak, Connor G. and Gao, Guoping and Wong, Andrew B. and Lei, Teng and Yu, Yi and Wang, Lin-Wang and Ginsberg, Naomi S. and Yang, Peidong},
abstractNote = {Semiconductor p-n junctions are fundamental building blocks for modern optical and electronic devices. The p- and n-type regions are typically created by chemical doping process. Here we show that in the new class of halide perovskite semiconductors, the p-n junctions can be readily induced through a localized thermal-driven phase transition. We demonstrate this p-n junction formation in a single-crystalline halide perovskite CsSnI 3 nanowire (NW). This material undergoes a phase transition from a double-chain yellow (Y) phase to an orthorhombic black (B) phase. The formation energies of the cation and anion vacancies in these two phases are significantly different, which leads to n- and p- type electrical characteristics for Y and B phases, respectively. Interface formation between these two phases and directional interface propagation within a single NW are directly observed under cathodoluminescence (CL) microscopy. Current rectification is demonstrated for the p-n junction formed with this localized thermal-driven phase transition.},
doi = {10.1073/pnas.1806515115},
journal = {Proceedings of the National Academy of Sciences of the United States of America},
number = 36,
volume = 115,
place = {United States},
year = {2018},
month = {8}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1073/pnas.1806515115

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Cited by: 2 works
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