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Title: Phase-transition–induced p-n junction in single halide perovskite nanowire

Abstract

Semiconductor p-n junctions are fundamental building blocks for modern optical and electronic devices. The p- and n-type regions are typically created by chemical doping process. Here we show that in the new class of halide perovskite semiconductors, the p-n junctions can be readily induced through a localized thermal-driven phase transition. We demonstrate this p-n junction formation in a single-crystalline halide perovskite CsSnI3 nanowire (NW). This material undergoes a phase transition from a double-chain yellow (Y) phase to an orthorhombic black (B) phase. The formation energies of the cation and anion vacancies in these two phases are significantly different, which leads to n- and p- type electrical characteristics for Y and B phases, respectively. Interface formation between these two phases and directional interface propagation within a single NW are directly observed under cathodoluminescence (CL) microscopy. Current rectification is demonstrated for the p-n junction formed with this localized thermal-driven phase transition.

Authors:
 [1];  [2];  [1];  [1];  [3];  [4];  [1];  [5];  [3];  [6];  [7]
  1. Department of Chemistry, University of California, Berkeley, CA 94720,
  2. Department of Mechanical Engineering, University of Hawaii at Manoa, Honolulu, HI 96822,
  3. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720,
  4. Department of Chemistry, University of California, Berkeley, CA 94720,, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720,
  5. School of Physical Science and Technology, ShanghaiTech University, 201210 Shanghai, China,
  6. Department of Chemistry, University of California, Berkeley, CA 94720,, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720,, Department of Physics, University of California, Berkeley, CA 94720,, Kavli Energy NanoScience Institute, Berkeley, CA 94720,, Molecular Biophysics and Integrated Bioimaging Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720,
  7. Department of Chemistry, University of California, Berkeley, CA 94720,, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720,, Kavli Energy NanoScience Institute, Berkeley, CA 94720,, Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1465256
Alternate Identifier(s):
OSTI ID: 1530375
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Published Article
Journal Name:
Proceedings of the National Academy of Sciences of the United States of America
Additional Journal Information:
Journal Name: Proceedings of the National Academy of Sciences of the United States of America Journal Volume: 115 Journal Issue: 36; Journal ID: ISSN 0027-8424
Publisher:
Proceedings of the National Academy of Sciences
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; halide perovskite nanowire; heterostructure; phase transition; p-n junction; electrical transport

Citation Formats

Kong, Qiao, Lee, Woochul, Lai, Minliang, Bischak, Connor G., Gao, Guoping, Wong, Andrew B., Lei, Teng, Yu, Yi, Wang, Lin-Wang, Ginsberg, Naomi S., and Yang, Peidong. Phase-transition–induced p-n junction in single halide perovskite nanowire. United States: N. p., 2018. Web. doi:10.1073/pnas.1806515115.
Kong, Qiao, Lee, Woochul, Lai, Minliang, Bischak, Connor G., Gao, Guoping, Wong, Andrew B., Lei, Teng, Yu, Yi, Wang, Lin-Wang, Ginsberg, Naomi S., & Yang, Peidong. Phase-transition–induced p-n junction in single halide perovskite nanowire. United States. https://doi.org/10.1073/pnas.1806515115
Kong, Qiao, Lee, Woochul, Lai, Minliang, Bischak, Connor G., Gao, Guoping, Wong, Andrew B., Lei, Teng, Yu, Yi, Wang, Lin-Wang, Ginsberg, Naomi S., and Yang, Peidong. Mon . "Phase-transition–induced p-n junction in single halide perovskite nanowire". United States. https://doi.org/10.1073/pnas.1806515115.
@article{osti_1465256,
title = {Phase-transition–induced p-n junction in single halide perovskite nanowire},
author = {Kong, Qiao and Lee, Woochul and Lai, Minliang and Bischak, Connor G. and Gao, Guoping and Wong, Andrew B. and Lei, Teng and Yu, Yi and Wang, Lin-Wang and Ginsberg, Naomi S. and Yang, Peidong},
abstractNote = {Semiconductor p-n junctions are fundamental building blocks for modern optical and electronic devices. The p- and n-type regions are typically created by chemical doping process. Here we show that in the new class of halide perovskite semiconductors, the p-n junctions can be readily induced through a localized thermal-driven phase transition. We demonstrate this p-n junction formation in a single-crystalline halide perovskite CsSnI3 nanowire (NW). This material undergoes a phase transition from a double-chain yellow (Y) phase to an orthorhombic black (B) phase. The formation energies of the cation and anion vacancies in these two phases are significantly different, which leads to n- and p- type electrical characteristics for Y and B phases, respectively. Interface formation between these two phases and directional interface propagation within a single NW are directly observed under cathodoluminescence (CL) microscopy. Current rectification is demonstrated for the p-n junction formed with this localized thermal-driven phase transition.},
doi = {10.1073/pnas.1806515115},
journal = {Proceedings of the National Academy of Sciences of the United States of America},
number = 36,
volume = 115,
place = {United States},
year = {2018},
month = {8}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1073/pnas.1806515115

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