Phase-transition–induced p-n junction in single halide perovskite nanowire
Abstract
Semiconductor p-n junctions are fundamental building blocks for modern optical and electronic devices. The p- and n-type regions are typically created by chemical doping process. Here we show that in the new class of halide perovskite semiconductors, the p-n junctions can be readily induced through a localized thermal-driven phase transition. We demonstrate this p-n junction formation in a single-crystalline halide perovskite CsSnI3 nanowire (NW). This material undergoes a phase transition from a double-chain yellow (Y) phase to an orthorhombic black (B) phase. The formation energies of the cation and anion vacancies in these two phases are significantly different, which leads to n- and p- type electrical characteristics for Y and B phases, respectively. Interface formation between these two phases and directional interface propagation within a single NW are directly observed under cathodoluminescence (CL) microscopy. Current rectification is demonstrated for the p-n junction formed with this localized thermal-driven phase transition.
- Authors:
-
- Department of Chemistry, University of California, Berkeley, CA 94720,
- Department of Mechanical Engineering, University of Hawaii at Manoa, Honolulu, HI 96822,
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720,
- Department of Chemistry, University of California, Berkeley, CA 94720,, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720,
- School of Physical Science and Technology, ShanghaiTech University, 201210 Shanghai, China,
- Department of Chemistry, University of California, Berkeley, CA 94720,, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720,, Department of Physics, University of California, Berkeley, CA 94720,, Kavli Energy NanoScience Institute, Berkeley, CA 94720,, Molecular Biophysics and Integrated Bioimaging Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720,
- Department of Chemistry, University of California, Berkeley, CA 94720,, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720,, Kavli Energy NanoScience Institute, Berkeley, CA 94720,, Department of Materials Science and Engineering, University of California, Berkeley, CA 94720
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1465256
- Alternate Identifier(s):
- OSTI ID: 1530375
- Grant/Contract Number:
- AC02-05CH11231
- Resource Type:
- Published Article
- Journal Name:
- Proceedings of the National Academy of Sciences of the United States of America
- Additional Journal Information:
- Journal Name: Proceedings of the National Academy of Sciences of the United States of America Journal Volume: 115 Journal Issue: 36; Journal ID: ISSN 0027-8424
- Publisher:
- Proceedings of the National Academy of Sciences
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; halide perovskite nanowire; heterostructure; phase transition; p-n junction; electrical transport
Citation Formats
Kong, Qiao, Lee, Woochul, Lai, Minliang, Bischak, Connor G., Gao, Guoping, Wong, Andrew B., Lei, Teng, Yu, Yi, Wang, Lin-Wang, Ginsberg, Naomi S., and Yang, Peidong. Phase-transition–induced p-n junction in single halide perovskite nanowire. United States: N. p., 2018.
Web. doi:10.1073/pnas.1806515115.
Kong, Qiao, Lee, Woochul, Lai, Minliang, Bischak, Connor G., Gao, Guoping, Wong, Andrew B., Lei, Teng, Yu, Yi, Wang, Lin-Wang, Ginsberg, Naomi S., & Yang, Peidong. Phase-transition–induced p-n junction in single halide perovskite nanowire. United States. https://doi.org/10.1073/pnas.1806515115
Kong, Qiao, Lee, Woochul, Lai, Minliang, Bischak, Connor G., Gao, Guoping, Wong, Andrew B., Lei, Teng, Yu, Yi, Wang, Lin-Wang, Ginsberg, Naomi S., and Yang, Peidong. Mon .
"Phase-transition–induced p-n junction in single halide perovskite nanowire". United States. https://doi.org/10.1073/pnas.1806515115.
@article{osti_1465256,
title = {Phase-transition–induced p-n junction in single halide perovskite nanowire},
author = {Kong, Qiao and Lee, Woochul and Lai, Minliang and Bischak, Connor G. and Gao, Guoping and Wong, Andrew B. and Lei, Teng and Yu, Yi and Wang, Lin-Wang and Ginsberg, Naomi S. and Yang, Peidong},
abstractNote = {Semiconductor p-n junctions are fundamental building blocks for modern optical and electronic devices. The p- and n-type regions are typically created by chemical doping process. Here we show that in the new class of halide perovskite semiconductors, the p-n junctions can be readily induced through a localized thermal-driven phase transition. We demonstrate this p-n junction formation in a single-crystalline halide perovskite CsSnI3 nanowire (NW). This material undergoes a phase transition from a double-chain yellow (Y) phase to an orthorhombic black (B) phase. The formation energies of the cation and anion vacancies in these two phases are significantly different, which leads to n- and p- type electrical characteristics for Y and B phases, respectively. Interface formation between these two phases and directional interface propagation within a single NW are directly observed under cathodoluminescence (CL) microscopy. Current rectification is demonstrated for the p-n junction formed with this localized thermal-driven phase transition.},
doi = {10.1073/pnas.1806515115},
journal = {Proceedings of the National Academy of Sciences of the United States of America},
number = 36,
volume = 115,
place = {United States},
year = {Mon Aug 20 00:00:00 EDT 2018},
month = {Mon Aug 20 00:00:00 EDT 2018}
}
https://doi.org/10.1073/pnas.1806515115
Web of Science
Works referenced in this record:
A Long-Term View on Perovskite Optoelectronics
journal, January 2016
- Docampo, Pablo; Bein, Thomas
- Accounts of Chemical Research, Vol. 49, Issue 2
Generalized Gradient Approximation Made Simple
journal, October 1996
- Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
- Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
The Renaissance of Halide Perovskites and Their Evolution as Emerging Semiconductors
journal, September 2015
- Stoumpos, Constantinos C.; Kanatzidis, Mercouri G.
- Accounts of Chemical Research, Vol. 48, Issue 10
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996
- Kresse, G.; Furthmüller, J.
- Computational Materials Science, Vol. 6, Issue 1, p. 15-50
All-solid-state dye-sensitized solar cells with high efficiency
journal, May 2012
- Chung, In; Lee, Byunghong; He, Jiaqing
- Nature, Vol. 485, Issue 7399, p. 486-489
Unusual defect physics in CH 3 NH 3 PbI 3 perovskite solar cell absorber
journal, February 2014
- Yin, Wan-Jian; Shi, Tingting; Yan, Yanfa
- Applied Physics Letters, Vol. 104, Issue 6
Ultralow thermal conductivity in all-inorganic halide perovskites
journal, July 2017
- Lee, Woochul; Li, Huashan; Wong, Andrew B.
- Proceedings of the National Academy of Sciences, Vol. 114, Issue 33
Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface
journal, July 2015
- Li, M. -Y.; Shi, Y.; Cheng, C. -C.
- Science, Vol. 349, Issue 6247
Review of recent progress in chemical stability of perovskite solar cells
journal, December 2014
- Niu, Guangda; Guo, Xudong; Wang, Liduo
- Journal of Materials Chemistry A, Vol. 3, Issue 17, p. 8970-8980
Thermal Transport in Silicon Nanowires at High Temperature up to 700 K
journal, May 2016
- Lee, Jaeho; Lee, Woochul; Lim, Jongwoo
- Nano Letters, Vol. 16, Issue 7
Structural Phase Transitions of the Polymorphs of CsSnI3 by Means of Rietveld Analysis of the X-Ray Diffraction
journal, May 1991
- Yamada, Koji; Funabiki, Shinya; Horimoto, Hiromi
- Chemistry Letters, Vol. 20, Issue 5, p. 801-804
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996
- Kresse, G.; Furthmüller, J.
- Physical Review B, Vol. 54, Issue 16, p. 11169-11186
Overcoming the electroluminescence efficiency limitations of perovskite light-emitting diodes
journal, December 2015
- Cho, H.; Jeong, S. -H.; Park, M. -H.
- Science, Vol. 350, Issue 6265
Structural, optical, and electrical properties of phase-controlled cesium lead iodide nanowires
journal, February 2017
- Lai, Minliang; Kong, Qiao; Bischak, Connor G.
- Nano Research, Vol. 10, Issue 4
Atomically thin two-dimensional organic-inorganic hybrid perovskites
journal, September 2015
- Dou, L.; Wong, A. B.; Yu, Y.
- Science, Vol. 349, Issue 6255
Ion Migration in Organometal Trihalide Perovskite and Its Impact on Photovoltaic Efficiency and Stability
journal, January 2016
- Yuan, Yongbo; Huang, Jinsong
- Accounts of Chemical Research, Vol. 49, Issue 2
Gate-Induced Insulator to Band-Like Transport Transition in Organolead Halide Perovskite
journal, January 2017
- Li, Dehui; Cheng, Hung-Chieh; Wu, Hao
- The Journal of Physical Chemistry Letters, Vol. 8, Issue 2
Bulk heterojunction solar cells with internal quantum efficiency approaching 100%
journal, April 2009
- Park, Sung Heum; Roy, Anshuman; Beaupré, Serge
- Nature Photonics, Vol. 3, Issue 5, p. 297-302
A Fully Integrated Nanosystem of Semiconductor Nanowires for Direct Solar Water Splitting
journal, May 2013
- Liu, Chong; Tang, Jinyao; Chen, Hao Ming
- Nano Letters, Vol. 13, Issue 6
Atomic layers of hybridized boron nitride and graphene domains
journal, February 2010
- Ci, Lijie; Song, Li; Jin, Chuanhong
- Nature Materials, Vol. 9, Issue 5, p. 430-435
Lasing in robust cesium lead halide perovskite nanowires
journal, February 2016
- Eaton, Samuel W.; Lai, Minliang; Gibson, Natalie A.
- Proceedings of the National Academy of Sciences, Vol. 113, Issue 8
Ambipolar solution-processed hybrid perovskite phototransistors
journal, September 2015
- Li, Feng; Ma, Chun; Wang, Hong
- Nature Communications, Vol. 6, Issue 1
Heterogeneous Charge Carrier Dynamics in Organic–Inorganic Hybrid Materials: Nanoscale Lateral and Depth-Dependent Variation of Recombination Rates in Methylammonium Lead Halide Perovskite Thin Films
journal, June 2015
- Bischak, Connor G.; Sanehira, Erin M.; Precht, Jake T.
- Nano Letters, Vol. 15, Issue 7
Van der Waals heterostructures and devices
journal, July 2016
- Liu, Yuan; Weiss, Nathan O.; Duan, Xidong
- Nature Reviews Materials, Vol. 1, Issue 9
Size-dependent phase transition in methylammonium lead iodide perovskite microplate crystals
journal, April 2016
- Li, Dehui; Wang, Gongming; Cheng, Hung-Chieh
- Nature Communications, Vol. 7, Issue 1
Semiconducting Tin and Lead Iodide Perovskites with Organic Cations: Phase Transitions, High Mobilities, and Near-Infrared Photoluminescent Properties
journal, July 2013
- Stoumpos, Constantinos C.; Malliakas, Christos D.; Kanatzidis, Mercouri G.
- Inorganic Chemistry, Vol. 52, Issue 15, p. 9019-9038
Rationale for mixing exact exchange with density functional approximations
journal, December 1996
- Perdew, John P.; Ernzerhof, Matthias; Burke, Kieron
- The Journal of Chemical Physics, Vol. 105, Issue 22, p. 9982-9985
Quantum dot-induced phase stabilization of -CsPbI3 perovskite for high-efficiency photovoltaics
journal, October 2016
- Swarnkar, A.; Marshall, A. R.; Sanehira, E. M.
- Science, Vol. 354, Issue 6308
Energy barrier at the N719-dye/CsSnI3 interface for photogenerated holes in dye-sensitized solar cells
journal, November 2014
- Zhang, Jin; Yu, Chunhui; Wang, Lili
- Scientific Reports, Vol. 4, Issue 1
CsSnI3 : Semiconductor or Metal? High Electrical Conductivity and Strong Near-Infrared Photoluminescence from a Single Material. High Hole Mobility and Phase-Transitions
journal, May 2012
- Chung, In; Song, Jung-Hwan; Im, Jino
- Journal of the American Chemical Society, Vol. 134, Issue 20, p. 8579-8587