Phase-transition–induced p-n junction in single halide perovskite nanowire

Journal Article · 20 August 2018 · Proceedings of the National Academy of Sciences of the United States of America

DOI: https://doi.org/10.1073/pnas.1806515115 · OSTI ID:1465256

Kong, Qiao ^[1]; Lee, Woochul ^[2]; Lai, Minliang ^[1]; Bischak, Connor G. ^[1]; Gao, Guoping ^[3]; Wong, Andrew B. ^[4]; Lei, Teng ^[1]; Yu, Yi ^[5]; Wang, Lin-Wang ^[3]; Ginsberg, Naomi S. ^[6]; Yang, Peidong ^[7]

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1. Department of Chemistry, University of California, Berkeley, CA 94720,
2. Department of Mechanical Engineering, University of Hawaii at Manoa, Honolulu, HI 96822,
3. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720,
4. Department of Chemistry, University of California, Berkeley, CA 94720,, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720,
5. School of Physical Science and Technology, ShanghaiTech University, 201210 Shanghai, China,
6. Department of Chemistry, University of California, Berkeley, CA 94720,, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720,, Department of Physics, University of California, Berkeley, CA 94720,, Kavli Energy NanoScience Institute, Berkeley, CA 94720,, Molecular Biophysics and Integrated Bioimaging Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720,
7. Department of Chemistry, University of California, Berkeley, CA 94720,, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720,, Kavli Energy NanoScience Institute, Berkeley, CA 94720,, Department of Materials Science and Engineering, University of California, Berkeley, CA 94720

Significance Functional semiconductor heterojunctions are fundamental units for building up advanced optoelectronics and circuits. Halide perovskites, representing a new class of semiconductors with soft and reconfigurable ionic bonding, hold promise for a variety of applications because of their many unusual, tunable physical properties. This paper reports the formation of the current-rectifying p-n heterojunction in single-crystalline CsSnI ₃ nanowires via localized phase transition between the n-type yellow and p-type black phases. We attribute the distinction of majority carrier types in these two phases to the different formation energies of the cation and anion vacancies. The present approach to heterojunction formation could inspire deeper understanding of phase-transition dynamics and enable precise control over the design of functional heterostructures using halide perovskite building blocks.

• Sponsoring Organization: USDOE
• Grant/Contract Number: AC02-05CH11231
• OSTI ID: 1465256
• Journal Information: Proceedings of the National Academy of Sciences of the United States of America, Journal Name: Proceedings of the National Academy of Sciences of the United States of America Journal Issue: 36 Vol. 115; ISSN 0027-8424
• Publisher: Proceedings of the National Academy of SciencesCopyright Statement
• Country of Publication: United States
• Language: English