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Title: Improved quantitative circuit model of realistic patch-based nanoantenna-enabled detectors

Abstract

Improving the sensitivity of infrared detectors is an essential step for future applications, including satellite- and terrestrial-based systems. We investigate nanoantenna-enabled detectors (NEDs) in the infrared, where the nanoantenna arrays play a fundamental role in enhancing the level of absorption within the active material of a photodetector. The design and optimization of nanoantenna-enabled detectors via full-wave simulations is a challenging task given the large parameter space to be explored. Here, we present a fast and accurate fully analytic circuit model of patch-based NEDs. This model allows for the inclusion of real metals, realistic patch thicknesses, non-absorbing spacer layers, the active detector layer, and absorption due to higher-order evanescent modes of the metallic array. We apply the circuit model to the design of NED devices based on Type II superlattice absorbers, and show that we can achieve absorption of ~70% of the incoming energy in subwavelength (~λ/5) absorber layers. In conclusion, the accuracy of the circuit model is verified against full-wave simulations, establishing this model as an efficient design tool to quickly and accurately optimize NED structures.

Authors:
ORCiD logo [1];  [1];  [1];  [1];  [1]
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  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1465183
Alternate Identifier(s):
OSTI ID: 1464592
Report Number(s):
SAND-2018-7801J
Journal ID: ISSN 0740-3224; JOBPDE; 665882
Grant/Contract Number:  
AC04-94AL85000; NA0003525
Resource Type:
Accepted Manuscript
Journal Name:
Journal of the Optical Society of America. Part B, Optical Physics
Additional Journal Information:
Journal Volume: 35; Journal Issue: 9; Journal ID: ISSN 0740-3224
Publisher:
Optical Society of America (OSA)
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION; photodetectors; metamaterials; optical properties

Citation Formats

Campione, Salvatore, Warne, Larry K., Goldflam, Michael D., Peters, David W., and Sinclair, Michael B. Improved quantitative circuit model of realistic patch-based nanoantenna-enabled detectors. United States: N. p., 2018. Web. doi:10.1364/josab.35.002144.
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Campione, Salvatore, Warne, Larry K., Goldflam, Michael D., Peters, David W., & Sinclair, Michael B. Improved quantitative circuit model of realistic patch-based nanoantenna-enabled detectors. United States. https://doi.org/10.1364/josab.35.002144
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Campione, Salvatore, Warne, Larry K., Goldflam, Michael D., Peters, David W., and Sinclair, Michael B. Thu . "Improved quantitative circuit model of realistic patch-based nanoantenna-enabled detectors". United States. https://doi.org/10.1364/josab.35.002144. https://www.osti.gov/servlets/purl/1465183.
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@article{osti_1465183,
title = {Improved quantitative circuit model of realistic patch-based nanoantenna-enabled detectors},
author = {Campione, Salvatore and Warne, Larry K. and Goldflam, Michael D. and Peters, David W. and Sinclair, Michael B.},
abstractNote = {Improving the sensitivity of infrared detectors is an essential step for future applications, including satellite- and terrestrial-based systems. We investigate nanoantenna-enabled detectors (NEDs) in the infrared, where the nanoantenna arrays play a fundamental role in enhancing the level of absorption within the active material of a photodetector. The design and optimization of nanoantenna-enabled detectors via full-wave simulations is a challenging task given the large parameter space to be explored. Here, we present a fast and accurate fully analytic circuit model of patch-based NEDs. This model allows for the inclusion of real metals, realistic patch thicknesses, non-absorbing spacer layers, the active detector layer, and absorption due to higher-order evanescent modes of the metallic array. We apply the circuit model to the design of NED devices based on Type II superlattice absorbers, and show that we can achieve absorption of ~70% of the incoming energy in subwavelength (~λ/5) absorber layers. In conclusion, the accuracy of the circuit model is verified against full-wave simulations, establishing this model as an efficient design tool to quickly and accurately optimize NED structures.},
doi = {10.1364/josab.35.002144},
journal = {Journal of the Optical Society of America. Part B, Optical Physics},
number = 9,
volume = 35,
place = {United States},
year = {Thu Aug 16 00:00:00 EDT 2018},
month = {Thu Aug 16 00:00:00 EDT 2018}
}
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https://doi.org/10.1364/josab.35.002144
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