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Title: The initial stages of ZnO atomic layer deposition on atomically flat In 0.53Ga 0.47 As substrates

InGaAs is one of the III–V active semiconductors used in modern high-electron-mobility transistors or high-speed electronics. ZnO is a good candidate material to be inserted as a tunneling insulator layer at the metal–semiconductor junction. A key consideration in many modern devices is the atomic structure of the hetero-interface, which often ultimately governs the electronic or chemical process of interest. Here, a complementary suite of in situ synchrotron X-ray techniques (fluorescence, reflectivity and absorption) as well as modeling is used to investigate both structural and chemical evolution during the initial growth of ZnO by atomic layer deposition (ALD) on In 0.53Ga 0.47As substrates. Prior to steady-state growth behavior, we discover a transient regime characterized by two stages. First, substrate-inhibited ZnO growth takes place on InGaAs terraces. This leads eventually to the formation of a 1 nm-thick, two-dimensional (2D) amorphous layer. Second, the growth behavior and its modeling suggest the occurrence of dense island formation, with an aspect ratio and surface roughness that depends sensitively on the growth condition. Lastly, ZnO ALD on In 0.53Ga 0.47As is characterized by 2D steady-state growth with a linear growth rate of 0.21 nm cy -1, as expected for layer-by-layer ZnO ALD.
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  1. Univ. Grenoble Alpes, CNRS, Grenoble (France)
  2. Synchrotron SOLEIL - Beamline SIRIUS, Saint-Aubin (France)
  3. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  4. Aix-Marseille Univ., and CNRS, Marseille (France); European Synchrotron Radiation Facility (ESRF), Grenoble (France)
Publication Date:
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Additional Journal Information:
Journal Volume: 10; Journal Issue: 24; Journal ID: ISSN 2040-3364
Royal Society of Chemistry
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
OSTI Identifier: