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Title: The initial stages of ZnO atomic layer deposition on atomically flat In 0.53Ga 0.47 As substrates

Abstract

InGaAs is one of the III–V active semiconductors used in modern high-electron-mobility transistors or high-speed electronics. ZnO is a good candidate material to be inserted as a tunneling insulator layer at the metal–semiconductor junction. A key consideration in many modern devices is the atomic structure of the hetero-interface, which often ultimately governs the electronic or chemical process of interest. Here, a complementary suite of in situ synchrotron X-ray techniques (fluorescence, reflectivity and absorption) as well as modeling is used to investigate both structural and chemical evolution during the initial growth of ZnO by atomic layer deposition (ALD) on In 0.53Ga 0.47As substrates. Prior to steady-state growth behavior, we discover a transient regime characterized by two stages. First, substrate-inhibited ZnO growth takes place on InGaAs terraces. This leads eventually to the formation of a 1 nm-thick, two-dimensional (2D) amorphous layer. Second, the growth behavior and its modeling suggest the occurrence of dense island formation, with an aspect ratio and surface roughness that depends sensitively on the growth condition. Lastly, ZnO ALD on In 0.53Ga 0.47As is characterized by 2D steady-state growth with a linear growth rate of 0.21 nm cy -1, as expected for layer-by-layer ZnO ALD.

Authors:
 [1];  [1];  [1]; ORCiD logo [1];  [1];  [2];  [3]; ORCiD logo [4]; ORCiD logo [1]
  1. Univ. Grenoble Alpes, CNRS, Grenoble (France)
  2. Synchrotron SOLEIL - Beamline SIRIUS, Saint-Aubin (France)
  3. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  4. Aix-Marseille Univ., and CNRS, Marseille (France); European Synchrotron Radiation Facility (ESRF), Grenoble (France)
Publication Date:
Research Org.:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1465135
Alternate Identifier(s):
OSTI ID: 1441229
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Accepted Manuscript
Journal Name:
Nanoscale
Additional Journal Information:
Journal Volume: 10; Journal Issue: 24; Journal ID: ISSN 2040-3364
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Skopin, Evgeniy V., Rapenne, Laetitia, Roussel, Hervé, Deschanvres, Jean-Luc, Blanquet, Elisabeth, Ciatto, Gianluca, Fong, Dillon D., Richard, Marie-Ingrid, and Renevier, Hubert. The initial stages of ZnO atomic layer deposition on atomically flat In0.53Ga0.47 As substrates. United States: N. p., 2018. Web. doi:10.1039/c8nr02440e.
Skopin, Evgeniy V., Rapenne, Laetitia, Roussel, Hervé, Deschanvres, Jean-Luc, Blanquet, Elisabeth, Ciatto, Gianluca, Fong, Dillon D., Richard, Marie-Ingrid, & Renevier, Hubert. The initial stages of ZnO atomic layer deposition on atomically flat In0.53Ga0.47 As substrates. United States. doi:10.1039/c8nr02440e.
Skopin, Evgeniy V., Rapenne, Laetitia, Roussel, Hervé, Deschanvres, Jean-Luc, Blanquet, Elisabeth, Ciatto, Gianluca, Fong, Dillon D., Richard, Marie-Ingrid, and Renevier, Hubert. Thu . "The initial stages of ZnO atomic layer deposition on atomically flat In0.53Ga0.47 As substrates". United States. doi:10.1039/c8nr02440e. https://www.osti.gov/servlets/purl/1465135.
@article{osti_1465135,
title = {The initial stages of ZnO atomic layer deposition on atomically flat In0.53Ga0.47 As substrates},
author = {Skopin, Evgeniy V. and Rapenne, Laetitia and Roussel, Hervé and Deschanvres, Jean-Luc and Blanquet, Elisabeth and Ciatto, Gianluca and Fong, Dillon D. and Richard, Marie-Ingrid and Renevier, Hubert},
abstractNote = {InGaAs is one of the III–V active semiconductors used in modern high-electron-mobility transistors or high-speed electronics. ZnO is a good candidate material to be inserted as a tunneling insulator layer at the metal–semiconductor junction. A key consideration in many modern devices is the atomic structure of the hetero-interface, which often ultimately governs the electronic or chemical process of interest. Here, a complementary suite of in situ synchrotron X-ray techniques (fluorescence, reflectivity and absorption) as well as modeling is used to investigate both structural and chemical evolution during the initial growth of ZnO by atomic layer deposition (ALD) on In0.53Ga0.47As substrates. Prior to steady-state growth behavior, we discover a transient regime characterized by two stages. First, substrate-inhibited ZnO growth takes place on InGaAs terraces. This leads eventually to the formation of a 1 nm-thick, two-dimensional (2D) amorphous layer. Second, the growth behavior and its modeling suggest the occurrence of dense island formation, with an aspect ratio and surface roughness that depends sensitively on the growth condition. Lastly, ZnO ALD on In0.53Ga0.47As is characterized by 2D steady-state growth with a linear growth rate of 0.21 nm cy-1, as expected for layer-by-layer ZnO ALD.},
doi = {10.1039/c8nr02440e},
journal = {Nanoscale},
number = 24,
volume = 10,
place = {United States},
year = {2018},
month = {6}
}

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