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Title: Quantifying the role of surface plasmon excitation and hot carrier transport in plasmonic devices

Abstract

Harnessing photoexcited “hot” carriers in metallic nanostructures could define a new phase of non-equilibrium optoelectronics for photodetection and photocatalysis. Surface plasmons are considered pivotal for enabling efficient operation of hot carrier devices. Clarifying the fundamental role of plasmon excitation is therefore critical for exploiting their full potential. Here, we measure the internal quantum efficiency in photoexcited gold (Au)–gallium nitride (GaN) Schottky diodes to elucidate and quantify the distinct roles of surface plasmon excitation, hot carrier transport, and carrier injection in device performance. We show that plasmon excitation does not influence the electronic processes occurring within the hot carrier device. Instead, the metal band structure and carrier transport processes dictate the observed hot carrier photocurrent distribution. The excellent agreement with parameter-free calculations indicates that photoexcited electrons generated in ultra-thin Au nanostructures impinge ballistically on the Au–GaN interface, suggesting the possibility for hot carrier collection without substantial energy losses via thermalization.

Authors:
; ; ; ; ; ; ; ; ORCiD logo
Publication Date:
Research Org.:
California Institute of Technology (CalTech), Pasadena, CA (United States); Lawrence Berkeley National Lab. (LBNL), CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1464991
Alternate Identifier(s):
OSTI ID: 1511489
Grant/Contract Number:  
SC0004993; AC02-05CH11231
Resource Type:
Published Article
Journal Name:
Nature Communications
Additional Journal Information:
Journal Name: Nature Communications Journal Volume: 9 Journal Issue: 1; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United Kingdom
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Tagliabue, Giulia, Jermyn, Adam S., Sundararaman, Ravishankar, Welch, Alex J., DuChene, Joseph S., Pala, Ragip, Davoyan, Artur R., Narang, Prineha, and Atwater, Harry A. Quantifying the role of surface plasmon excitation and hot carrier transport in plasmonic devices. United Kingdom: N. p., 2018. Web. https://doi.org/10.1038/s41467-018-05968-x.
Tagliabue, Giulia, Jermyn, Adam S., Sundararaman, Ravishankar, Welch, Alex J., DuChene, Joseph S., Pala, Ragip, Davoyan, Artur R., Narang, Prineha, & Atwater, Harry A. Quantifying the role of surface plasmon excitation and hot carrier transport in plasmonic devices. United Kingdom. https://doi.org/10.1038/s41467-018-05968-x
Tagliabue, Giulia, Jermyn, Adam S., Sundararaman, Ravishankar, Welch, Alex J., DuChene, Joseph S., Pala, Ragip, Davoyan, Artur R., Narang, Prineha, and Atwater, Harry A. Thu . "Quantifying the role of surface plasmon excitation and hot carrier transport in plasmonic devices". United Kingdom. https://doi.org/10.1038/s41467-018-05968-x.
@article{osti_1464991,
title = {Quantifying the role of surface plasmon excitation and hot carrier transport in plasmonic devices},
author = {Tagliabue, Giulia and Jermyn, Adam S. and Sundararaman, Ravishankar and Welch, Alex J. and DuChene, Joseph S. and Pala, Ragip and Davoyan, Artur R. and Narang, Prineha and Atwater, Harry A.},
abstractNote = {Harnessing photoexcited “hot” carriers in metallic nanostructures could define a new phase of non-equilibrium optoelectronics for photodetection and photocatalysis. Surface plasmons are considered pivotal for enabling efficient operation of hot carrier devices. Clarifying the fundamental role of plasmon excitation is therefore critical for exploiting their full potential. Here, we measure the internal quantum efficiency in photoexcited gold (Au)–gallium nitride (GaN) Schottky diodes to elucidate and quantify the distinct roles of surface plasmon excitation, hot carrier transport, and carrier injection in device performance. We show that plasmon excitation does not influence the electronic processes occurring within the hot carrier device. Instead, the metal band structure and carrier transport processes dictate the observed hot carrier photocurrent distribution. The excellent agreement with parameter-free calculations indicates that photoexcited electrons generated in ultra-thin Au nanostructures impinge ballistically on the Au–GaN interface, suggesting the possibility for hot carrier collection without substantial energy losses via thermalization.},
doi = {10.1038/s41467-018-05968-x},
journal = {Nature Communications},
number = 1,
volume = 9,
place = {United Kingdom},
year = {2018},
month = {8}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1038/s41467-018-05968-x

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Cited by: 14 works
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