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Title: New topological states in HgTe quantum wells from defect patterning

To explore new methods for the realization of the quantum spin Hall (QSH) effect in two-dimensional (2D) materials, we have constructed a honeycomb geometry (HG) by etching rows of hexagonal holes in HgTe quantum wells (QWs).
Authors:
ORCiD logo [1] ; ORCiD logo [2]
  1. Department of Physics and Astronomy, University of California, Irvine, USA, School of Physics
  2. Department of Physics and Astronomy, University of California, Irvine, USA
Publication Date:
Grant/Contract Number:
FG02-05ER46237
Type:
Publisher's Accepted Manuscript
Journal Name:
Nanoscale
Additional Journal Information:
Journal Name: Nanoscale Journal Volume: 10 Journal Issue: 33; Journal ID: ISSN 2040-3364
Publisher:
Royal Society of Chemistry (RSC)
Sponsoring Org:
USDOE
Country of Publication:
United Kingdom
Language:
English
OSTI Identifier:
1464566

Fu, Hua-Hua, and Wu, Ruqian. New topological states in HgTe quantum wells from defect patterning. United Kingdom: N. p., Web. doi:10.1039/C8NR04878A.
Fu, Hua-Hua, & Wu, Ruqian. New topological states in HgTe quantum wells from defect patterning. United Kingdom. doi:10.1039/C8NR04878A.
Fu, Hua-Hua, and Wu, Ruqian. 2018. "New topological states in HgTe quantum wells from defect patterning". United Kingdom. doi:10.1039/C8NR04878A.
@article{osti_1464566,
title = {New topological states in HgTe quantum wells from defect patterning},
author = {Fu, Hua-Hua and Wu, Ruqian},
abstractNote = {To explore new methods for the realization of the quantum spin Hall (QSH) effect in two-dimensional (2D) materials, we have constructed a honeycomb geometry (HG) by etching rows of hexagonal holes in HgTe quantum wells (QWs).},
doi = {10.1039/C8NR04878A},
journal = {Nanoscale},
number = 33,
volume = 10,
place = {United Kingdom},
year = {2018},
month = {1}
}

Works referenced in this record:

Quantum Spin Hall Insulator State in HgTe Quantum Wells
journal, November 2007

Colloquium: Topological insulators
journal, November 2010

Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
journal, December 2006
  • Bernevig, B. A.; Hughes, T. L.; Zhang, S.-C.
  • Science, Vol. 314, Issue 5806, p. 1757-1761
  • DOI: 10.1126/science.1133734

The electronic properties of graphene
journal, January 2009
  • Castro Neto, A. H.; Guinea, F.; Peres, N. M. R.
  • Reviews of Modern Physics, Vol. 81, Issue 1, p. 109-162
  • DOI: 10.1103/RevModPhys.81.109