Direct-to-indirect electronic state transition in dynamically compressed GaAs quantum wells

Grivickas, P.; Geisz, J. F.; Gupta, Y. M.

doi:10.1063/1.5038723

Title: Direct-to-indirect electronic state transition in dynamically compressed GaAs quantum wells

Authors:

Grivickas, P. ^[1]; Geisz, J. F. ^[2];

^[1]

Washington State Univ., Pullman, WA (United States). Inst. for Shock Physics. Dept. of Physics
National Renewable Energy Lab. (NREL), Golden, CO (United States)

Publication Date:: Mon Aug 13 00:00:00 EDT 2018

Research Org.:: Washington State Univ., Pullman, WA (United States); National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA), Office of Defense Programs (DP); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

OSTI Identifier:: 1476912

Alternate Identifier(s):: OSTI ID: 1464316; OSTI ID: 1468524; OSTI ID: 1476907; OSTI ID: 1512622

Report Number(s):: NREL/JA-5J00-71420; LLNL-JRNL-744179
Journal ID: ISSN 0003-6951

Grant/Contract Number:: NA0000970; AC36-08GO28308

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 113; Journal Issue: 7; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; photoluminescence spectroscopy; electronic bandstructure; quantum wells; electronic structure; gallium arsenide; III-V semiconductors; quantum theory; semiconducting gallium; semiconducting gallium arsenide; strain

Citation Formats


                    Grivickas, P., Geisz, J. F., and Gupta, Y. M. Direct-to-indirect electronic state transition in dynamically compressed GaAs quantum wells.  United States: N. p., 2018. 
Web.  doi:10.1063/1.5038723.

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                    Grivickas, P., Geisz, J. F., & Gupta, Y. M. Direct-to-indirect electronic state transition in dynamically compressed GaAs quantum wells.  United States.  https://doi.org/10.1063/1.5038723

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                    Grivickas, P., Geisz, J. F., and Gupta, Y. M. Mon .  
"Direct-to-indirect electronic state transition in dynamically compressed GaAs quantum wells".  United States.  https://doi.org/10.1063/1.5038723.  https://www.osti.gov/servlets/purl/1476912.

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@article{osti_1476912,

  title        = {Direct-to-indirect electronic state transition in dynamically compressed GaAs quantum wells},

  author       = {Grivickas, P. and Geisz, J. F. and Gupta, Y. M.},

  abstractNote = {},

  doi          = {10.1063/1.5038723},

  journal      = {Applied Physics Letters},

  number       = 7,

  volume       = 113,

  place        = {United States},

  year         = {Mon Aug 13 00:00:00 EDT 2018},

  month        = {Mon Aug 13 00:00:00 EDT 2018}

}

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https://doi.org/10.1063/1.5038723

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Works referenced in this record:

Use of dynamic compression to probe semiconductor response at large strains
journal, April 2013

Grivickas, P.; McCluskey, M. D.; Gupta, Y. M.
physica status solidi (b), Vol. 250, Issue 4
DOI: 10.1002/pssb.201200959

Real-time band structure changes of GaAs during continuous dynamic compression to 5 GPa
journal, October 2009

Grivickas, P.; McCluskey, M. D.; Gupta, Y. M.
Applied Physics Letters, Vol. 95, Issue 15
DOI: 10.1063/1.3247886

Effects of alloying and hydrostatic pressure on electronic and optical properties of GaAs-Al_{x}Ga_{1-x}As superlattices and multiple-quantum-well structures
journal, January 1987

Gell, M.; Ninno, D.; Jaros, M.
Physical Review B, Vol. 35, Issue 3
DOI: 10.1103/PhysRevB.35.1196

Tuning the optical and electronic properties of colloidal nanocrystals by lattice strain
journal, December 2008

Smith, Andrew M.; Mohs, Aaron M.; Nie, Shuming
Nature Nanotechnology, Vol. 4, Issue 1
DOI: 10.1038/nnano.2008.360

Observation of direct and phonon-assisted indirect transitions in ${G a A s / G a}_{x} {Al}_{1 - x} As$ multiquantum wells under hydrostatic pressure
journal, March 1998

Dai, N.; Huang, D.; Liu, X. Q.
Physical Review B, Vol. 57, Issue 11
DOI: 10.1103/PhysRevB.57.6566

Effect of Pressure on the Absorption Edges of Some III-V, II-VI, and I-VII Compounds
journal, May 1961

Edwards, A. L.; Drickamer, H. G.
Physical Review, Vol. 122, Issue 4
DOI: 10.1103/PhysRev.122.1149

Laser interferometer for measuring high velocities of any reflecting surface
journal, November 1972

Barker, L. M.; Hollenbach, R. E.
Journal of Applied Physics, Vol. 43, Issue 11
DOI: 10.1063/1.1660986

Effects of compressive uniaxial stress on the electronic structure of GaAs- ${Ga}_{1 - x} {Al}_{x} As$ quantum wells
journal, August 1987

Mailhiot, C.; Smith, D. L.
Physical Review B, Vol. 36, Issue 5
DOI: 10.1103/PhysRevB.36.2942

Mixing of valence subbands in GaAs/ ${Al}_{x}$ ${Ga}_{1 - x}$ As multiple quantum wells by uniaxial stress
journal, March 1988

Lee, Johnson; Jagannath, C.; Vassell, M. O.
Physical Review B, Vol. 37, Issue 8
DOI: 10.1103/PhysRevB.37.4164

Million-Atom Pseudopotential Calculation of $γ$ - $X$ Mixing in $GaAs / AlAs$ Superlattices and Quantum Dots
journal, April 1997

Wang, Lin-Wang; Franceschetti, Alberto; Zunger, Alex
Physical Review Letters, Vol. 78, Issue 14
DOI: 10.1103/PhysRevLett.78.2819

Temperature dependence of exciton lifetimes in GaAs/ ${Al}_{x}$ ${Ga}_{1 - x}$ As single quantum wells
journal, April 1993

Martinez-Pastor, J.; Vinattieri, A.; Carraresi, L.
Physical Review B, Vol. 47, Issue 16
DOI: 10.1103/PhysRevB.47.10456

On the Farsightedness (hyperopia) of the Standard k � p Model
journal, April 2002

Zunger, Alex
physica status solidi (a), Vol. 190, Issue 2
DOI: 10.1002/1521-396X(200204)190:2<467::AID-PSSA467>3.0.CO;2-4

Transformation of GaAs into an indirect $L$ -band-gap semiconductor under uniaxial strain
journal, August 2009

Grivickas, P.; McCluskey, M. D.; Gupta, Y. M.
Physical Review B, Vol. 80, Issue 7
DOI: 10.1103/PhysRevB.80.073201

Band-gap luminescence of GaP:S shock compressed to 5GPa
journal, April 2008

Grivickas, P.; McCluskey, M. D.; Gupta, Y. M.
Applied Physics Letters, Vol. 92, Issue 14
DOI: 10.1063/1.2907499

Effects of external stress on the electronic structure and optical properties of [001]- and [111]-growth-axis semiconductor superlattices
journal, September 1988

Mailhiot, C.; Smith, D. L.
Physical Review B, Vol. 38, Issue 8
DOI: 10.1103/PhysRevB.38.5520

Band parameters for III–V compound semiconductors and their alloys
journal, June 2001

Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R.
Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875
DOI: 10.1063/1.1368156

Equilibrium limits of coherency in strained nanowire heterostructures
journal, June 2005

Ertekin, Elif; Greaney, P. A.; Chrzan, D. C.
Journal of Applied Physics, Vol. 97, Issue 11
DOI: 10.1063/1.1903106

Effects of linear and nonlinear piezoelectricity on the electronic properties of $In As ∕ Ga As$ quantum dots
journal, August 2006

Bester, Gabriel; Zunger, Alex; Wu, Xifan
Physical Review B, Vol. 74, Issue 8
DOI: 10.1103/PhysRevB.74.081305

Correction to the velocity‐per‐fringe relationship for the VISAR interferometer
journal, August 1974

Barker, L. M.; Schuler, K. W.
Journal of Applied Physics, Vol. 45, Issue 8
DOI: 10.1063/1.1663841

Γ- X mixing in GaAs/ ${Al}_{x}$ ${Ga}_{1 - x}$ As coupled double quantum wells under hydrostatic pressure
journal, January 1993

Burnett, J. H.; Cheong, H. M.; Paul, W.
Physical Review B, Vol. 47, Issue 4
DOI: 10.1103/PhysRevB.47.1991

High-pressure studies of GaAs- ${Al}_{x}$ ${Ga}_{1 - x}$ As quantum wells at 300 and 80 K using photoreflectance spectroscopy
journal, November 1988

Kangarlu, A.; Chandrasekhar, H. R.; Chandrasekhar, M.
Physical Review B, Vol. 38, Issue 14
DOI: 10.1103/PhysRevB.38.9790

Strain-Induced Band Gap Modification in Coherent Core/Shell Nanostructures
journal, August 2010

Yang, Shenyuan; Prendergast, David; Neaton, Jeffrey B.
Nano Letters, Vol. 10, Issue 8
DOI: 10.1021/nl101999p

Uniaxial stress dependence of spatially confined excitons
journal, November 1986

Jagannath, C.; Koteles, Emil S.; Lee, Johnson
Physical Review B, Vol. 34, Issue 10
DOI: 10.1103/PhysRevB.34.7027

Free‐standing versus AlAs‐embedded GaAs quantum dots, wires, and films: The emergence of a zero‐confinement state
journal, June 1996

Franceschetti, Alberto; Zunger, Alex
Applied Physics Letters, Vol. 68, Issue 24
DOI: 10.1063/1.115791

High-pressure studies of GaAs- ${Ga}_{1 - x}$ ${Al}_{x}$ As quantum wells of widths 26 to 150 A ̊
journal, June 1986

Venkateswaran, Umadevi; Chandrasekhar, Meera; Chandrasekhar, H. R.
Physical Review B, Vol. 33, Issue 12
DOI: 10.1103/PhysRevB.33.8416

Quantum-confinement-induced Γ→ X transition in GaAs/AlGaAs quantum films, wires, and dots
journal, November 1995

Franceschetti, Alberto; Zunger, Alex
Physical Review B, Vol. 52, Issue 20
DOI: 10.1103/PhysRevB.52.14664

Quantum-size-induced electronic transitions in quantum dots: Indirect band-gap GaAs
journal, July 2008

Luo, Jun-Wei; Franceschetti, Alberto; Zunger, Alex
Physical Review B, Vol. 78, Issue 3
DOI: 10.1103/PhysRevB.78.035306

Optics of multiple quantum wells uniaxially stressed along the growth axis
journal, May 1996

Etchegoin, P.; Fainstein, A.; Sirenko, A. A.
Physical Review B, Vol. 53, Issue 20
DOI: 10.1103/PhysRevB.53.13662

Semiconductors under Uniaxial Strain
journal, November 1996

Cardona, M.
physica status solidi (b), Vol. 198, Issue 1
DOI: 10.1002/pssb.2221980103

Effect of hydrostatic pressure on GaAs- ${Ga}_{1 - x}$ ${Al}_{x}$ As microstructures
journal, April 1987

Lefebvre, P.; Gil, B.; Mathieu, H.
Physical Review B, Vol. 35, Issue 11
DOI: 10.1103/PhysRevB.35.5630

Reflectance spectroscopy on GaAs- ${Ga}_{0.5}$ ${Al}_{0.5}$ As single quantum wells under in-plane uniaxial stress at liquid-helium temperature
journal, July 1988

Gil, Bernard; Lefebvre, Pierre; Mathieu, Henry
Physical Review B, Vol. 38, Issue 2
DOI: 10.1103/PhysRevB.38.1215

Quantum-Size Effects on the Pressure-Induced Direct-to-Indirect Band-Gap Transition in InP Quantum Dots
journal, June 1998

Fu, Huaxiang; Zunger, Alex
Physical Review Letters, Vol. 80, Issue 24
DOI: 10.1103/PhysRevLett.80.5397

Works referencing / citing this record:

Geometric effects on the electronic structure and the bound states in annular corrugated wires
journal, October 2019

Cheng, Run; Wang, Yong-Long; Gao, Hao-Xuan
Journal of Physics: Condensed Matter, Vol. 32, Issue 2
DOI: 10.1088/1361-648x/ab494e

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Title: Direct-to-indirect electronic state transition in dynamically compressed GaAs quantum wells

Citation Formats

Use of dynamic compression to probe semiconductor response at large strains journal, April 2013

Real-time band structure changes of GaAs during continuous dynamic compression to 5 GPa journal, October 2009

Effects of alloying and hydrostatic pressure on electronic and optical properties of GaAs-Al_{x}Ga_{1-x}As superlattices and multiple-quantum-well structures journal, January 1987

Tuning the optical and electronic properties of colloidal nanocrystals by lattice strain journal, December 2008

Observation of direct and phonon-assisted indirect transitions in G a A s / G a x Al 1 − x As multiquantum wells under hydrostatic pressure journal, March 1998

Effect of Pressure on the Absorption Edges of Some III-V, II-VI, and I-VII Compounds journal, May 1961

Laser interferometer for measuring high velocities of any reflecting surface journal, November 1972

Effects of compressive uniaxial stress on the electronic structure of GaAs- Ga 1 − x Al x As quantum wells journal, August 1987

Mixing of valence subbands in GaAs/ Al x Ga 1 − x As multiple quantum wells by uniaxial stress journal, March 1988

Million-Atom Pseudopotential Calculation of γ - X Mixing in GaAs / AlAs Superlattices and Quantum Dots journal, April 1997

Temperature dependence of exciton lifetimes in GaAs/ Al x Ga 1 − x As single quantum wells journal, April 1993

On the Farsightedness (hyperopia) of the Standard k � p Model journal, April 2002

Transformation of GaAs into an indirect L -band-gap semiconductor under uniaxial strain journal, August 2009

Band-gap luminescence of GaP:S shock compressed to 5GPa journal, April 2008

Effects of external stress on the electronic structure and optical properties of [001]- and [111]-growth-axis semiconductor superlattices journal, September 1988

Band parameters for III–V compound semiconductors and their alloys journal, June 2001

Equilibrium limits of coherency in strained nanowire heterostructures journal, June 2005

Effects of linear and nonlinear piezoelectricity on the electronic properties of In As ∕ Ga As quantum dots journal, August 2006

Correction to the velocity‐per‐fringe relationship for the VISAR interferometer journal, August 1974

Γ- X mixing in GaAs/ Al x Ga 1 − x As coupled double quantum wells under hydrostatic pressure journal, January 1993

High-pressure studies of GaAs- Al x Ga 1 − x As quantum wells at 300 and 80 K using photoreflectance spectroscopy journal, November 1988

Strain-Induced Band Gap Modification in Coherent Core/Shell Nanostructures journal, August 2010

Uniaxial stress dependence of spatially confined excitons journal, November 1986

Free‐standing versus AlAs‐embedded GaAs quantum dots, wires, and films: The emergence of a zero‐confinement state journal, June 1996

High-pressure studies of GaAs- Ga 1 − x Al x As quantum wells of widths 26 to 150 A ̊ journal, June 1986

Quantum-confinement-induced Γ→ X transition in GaAs/AlGaAs quantum films, wires, and dots journal, November 1995

Quantum-size-induced electronic transitions in quantum dots: Indirect band-gap GaAs journal, July 2008

Optics of multiple quantum wells uniaxially stressed along the growth axis journal, May 1996

Semiconductors under Uniaxial Strain journal, November 1996

Effect of hydrostatic pressure on GaAs- Ga 1 − x Al x As microstructures journal, April 1987

Reflectance spectroscopy on GaAs- Ga 0.5 Al 0.5 As single quantum wells under in-plane uniaxial stress at liquid-helium temperature journal, July 1988

Quantum-Size Effects on the Pressure-Induced Direct-to-Indirect Band-Gap Transition in InP Quantum Dots journal, June 1998

Geometric effects on the electronic structure and the bound states in annular corrugated wires journal, October 2019

Use of dynamic compression to probe semiconductor response at large strains
journal, April 2013

Real-time band structure changes of GaAs during continuous dynamic compression to 5 GPa
journal, October 2009

Effects of alloying and hydrostatic pressure on electronic and optical properties of GaAs-Al_{x}Ga_{1-x}As superlattices and multiple-quantum-well structures
journal, January 1987

Tuning the optical and electronic properties of colloidal nanocrystals by lattice strain
journal, December 2008

Observation of direct and phonon-assisted indirect transitions in ${G a A s / G a}_{x} {Al}_{1 - x} As$ multiquantum wells under hydrostatic pressure
journal, March 1998

Effect of Pressure on the Absorption Edges of Some III-V, II-VI, and I-VII Compounds
journal, May 1961

Laser interferometer for measuring high velocities of any reflecting surface
journal, November 1972

Effects of compressive uniaxial stress on the electronic structure of GaAs- ${Ga}_{1 - x} {Al}_{x} As$ quantum wells
journal, August 1987

Mixing of valence subbands in GaAs/ ${Al}_{x}$ ${Ga}_{1 - x}$ As multiple quantum wells by uniaxial stress
journal, March 1988

Million-Atom Pseudopotential Calculation of $γ$ - $X$ Mixing in $GaAs / AlAs$ Superlattices and Quantum Dots
journal, April 1997

Temperature dependence of exciton lifetimes in GaAs/ ${Al}_{x}$ ${Ga}_{1 - x}$ As single quantum wells
journal, April 1993

On the Farsightedness (hyperopia) of the Standard k � p Model
journal, April 2002

Transformation of GaAs into an indirect $L$ -band-gap semiconductor under uniaxial strain
journal, August 2009

Band-gap luminescence of GaP:S shock compressed to 5GPa
journal, April 2008

Effects of external stress on the electronic structure and optical properties of [001]- and [111]-growth-axis semiconductor superlattices
journal, September 1988

Band parameters for III–V compound semiconductors and their alloys
journal, June 2001

Equilibrium limits of coherency in strained nanowire heterostructures
journal, June 2005

Effects of linear and nonlinear piezoelectricity on the electronic properties of $In As ∕ Ga As$ quantum dots
journal, August 2006

Correction to the velocity‐per‐fringe relationship for the VISAR interferometer
journal, August 1974

Γ- X mixing in GaAs/ ${Al}_{x}$ ${Ga}_{1 - x}$ As coupled double quantum wells under hydrostatic pressure
journal, January 1993

High-pressure studies of GaAs- ${Al}_{x}$ ${Ga}_{1 - x}$ As quantum wells at 300 and 80 K using photoreflectance spectroscopy
journal, November 1988

Strain-Induced Band Gap Modification in Coherent Core/Shell Nanostructures
journal, August 2010

Uniaxial stress dependence of spatially confined excitons
journal, November 1986

Free‐standing versus AlAs‐embedded GaAs quantum dots, wires, and films: The emergence of a zero‐confinement state
journal, June 1996

High-pressure studies of GaAs- ${Ga}_{1 - x}$ ${Al}_{x}$ As quantum wells of widths 26 to 150 A ̊
journal, June 1986

Quantum-confinement-induced Γ→ X transition in GaAs/AlGaAs quantum films, wires, and dots
journal, November 1995

Quantum-size-induced electronic transitions in quantum dots: Indirect band-gap GaAs
journal, July 2008

Optics of multiple quantum wells uniaxially stressed along the growth axis
journal, May 1996

Semiconductors under Uniaxial Strain
journal, November 1996

Effect of hydrostatic pressure on GaAs- ${Ga}_{1 - x}$ ${Al}_{x}$ As microstructures
journal, April 1987

Reflectance spectroscopy on GaAs- ${Ga}_{0.5}$ ${Al}_{0.5}$ As single quantum wells under in-plane uniaxial stress at liquid-helium temperature
journal, July 1988

Quantum-Size Effects on the Pressure-Induced Direct-to-Indirect Band-Gap Transition in InP Quantum Dots
journal, June 1998

Geometric effects on the electronic structure and the bound states in annular corrugated wires
journal, October 2019