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Title: Strain engineering of the silicon-vacancy center in diamond

We control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin transition frequencies over a wide range, an essential step towards multiqubit networks. In the process, we infer the strain Hamiltonian of the SiV revealing large strain susceptibilities of order 1 PHz/strain for the electronic orbital states. Here, we identify regimes where the spin-orbit interaction results in a large strain susceptibility of order 100 THz/strain for spin transitions, and propose an experiment where the SiV spin is strongly coupled to a nanomechanical resonator.
Authors:
 [1] ;  [1] ;  [2] ;  [1] ;  [1] ;  [1] ;  [2] ;  [2] ;  [3] ;  [1] ;  [4] ;  [1] ;  [1] ;  [1] ;  [5] ;  [5] ;  [5] ;  [4] ;  [2] ;  [1]
  1. Harvard Univ., Cambridge, MA (United States). John A. Paulson School of Engineering and Applied Sciences
  2. Univ. of Cambridge (United Kingdom). Cavendish Lab.
  3. Harvard Univ., Cambridge, MA (United States). Dept. of Physics; California Inst. of Technology (CalTech), Pasadena, CA (United States). Inst. for Quantum Information and Matter and Thomas J. Watson, Sr., Lab. of Applied Physics
  4. Harvard Univ., Cambridge, MA (United States). Dept. of Physics
  5. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Report Number(s):
SAND-2018-0438J
Journal ID: ISSN 2469-9950; PRBMDO; 659973
Grant/Contract Number:
AC04-94AL85000; DMR-1231319; NA0003525
Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 97; Journal Issue: 20; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)
Country of Publication:
United States
Language:
English
Subject:
74 ATOMIC AND MOLECULAR PHYSICS; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
OSTI Identifier:
1464186
Alternate Identifier(s):
OSTI ID: 1439377

Meesala, Srujan, Sohn, Young-Ik, Pingault, Benjamin, Shao, Linbo, Atikian, Haig A., Holzgrafe, Jeffrey, Gündoğan, Mustafa, Stavrakas, Camille, Sipahigil, Alp, Chia, Cleaven, Evans, Ruffin, Burek, Michael J., Zhang, Mian, Wu, Lue, Pacheco, Jose L., Abraham, John, Bielejec, Edward, Lukin, Mikhail D., Atatüre, Mete, and Lončar, Marko. Strain engineering of the silicon-vacancy center in diamond. United States: N. p., Web. doi:10.1103/PhysRevB.97.205444.
Meesala, Srujan, Sohn, Young-Ik, Pingault, Benjamin, Shao, Linbo, Atikian, Haig A., Holzgrafe, Jeffrey, Gündoğan, Mustafa, Stavrakas, Camille, Sipahigil, Alp, Chia, Cleaven, Evans, Ruffin, Burek, Michael J., Zhang, Mian, Wu, Lue, Pacheco, Jose L., Abraham, John, Bielejec, Edward, Lukin, Mikhail D., Atatüre, Mete, & Lončar, Marko. Strain engineering of the silicon-vacancy center in diamond. United States. doi:10.1103/PhysRevB.97.205444.
Meesala, Srujan, Sohn, Young-Ik, Pingault, Benjamin, Shao, Linbo, Atikian, Haig A., Holzgrafe, Jeffrey, Gündoğan, Mustafa, Stavrakas, Camille, Sipahigil, Alp, Chia, Cleaven, Evans, Ruffin, Burek, Michael J., Zhang, Mian, Wu, Lue, Pacheco, Jose L., Abraham, John, Bielejec, Edward, Lukin, Mikhail D., Atatüre, Mete, and Lončar, Marko. 2018. "Strain engineering of the silicon-vacancy center in diamond". United States. doi:10.1103/PhysRevB.97.205444.
@article{osti_1464186,
title = {Strain engineering of the silicon-vacancy center in diamond},
author = {Meesala, Srujan and Sohn, Young-Ik and Pingault, Benjamin and Shao, Linbo and Atikian, Haig A. and Holzgrafe, Jeffrey and Gündoğan, Mustafa and Stavrakas, Camille and Sipahigil, Alp and Chia, Cleaven and Evans, Ruffin and Burek, Michael J. and Zhang, Mian and Wu, Lue and Pacheco, Jose L. and Abraham, John and Bielejec, Edward and Lukin, Mikhail D. and Atatüre, Mete and Lončar, Marko},
abstractNote = {We control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin transition frequencies over a wide range, an essential step towards multiqubit networks. In the process, we infer the strain Hamiltonian of the SiV revealing large strain susceptibilities of order 1 PHz/strain for the electronic orbital states. Here, we identify regimes where the spin-orbit interaction results in a large strain susceptibility of order 100 THz/strain for spin transitions, and propose an experiment where the SiV spin is strongly coupled to a nanomechanical resonator.},
doi = {10.1103/PhysRevB.97.205444},
journal = {Physical Review B},
number = 20,
volume = 97,
place = {United States},
year = {2018},
month = {5}
}

Works referenced in this record:

Free-Standing Mechanical and Photonic Nanostructures in Single-Crystal Diamond
journal, February 2012
  • Burek, Michael J.; de Leon, Nathalie P.; Shields, Brendan J.
  • Nano Letters, Vol. 12, Issue 12, p. 6084-6089
  • DOI: 10.1021/nl302541e