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Title: Single-ion implantation for solid state quantum computer development

Abstract

Several solid state quantum computer schemes are based on the manipulation of electron and nuclear spins of single donor atoms in a solid matrix. The fabrication of qubit arrays requires the placement of individual atoms with nanometer precision and high efficiency. In this paper we describe first results from low dose, low energy implantations and our development of a low energy (<10 keV), single ion implantation scheme for 31P q+ ions. When 31P q+ ions impinge on a wafer surface, their potential energy (9.3 keV for P 15+) is released, and about 20 secondary electrons are emitted. The emission of multiple secondary electrons allows detection of each ion impact with 100% efficiency. The beam spot on target is controlled by beam focusing and collimation. Finally, exactly one ion is implanted into a selected area avoiding a Poissonian distribution of implanted ions.

Authors:
 [1];  [1];  [1];  [2];  [2];  [2]
  1. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  2. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC); National Security Agency (NSA) (United States); US Army Research Office (ARO)
OSTI Identifier:
1464151
Grant/Contract Number:  
AC03-76SF00098; W-7405-ENG-48; MOD707501
Resource Type:
Accepted Manuscript
Journal Name:
Proceedings of SPIE - The International Society for Optical Engineering
Additional Journal Information:
Journal Volume: 4656; Journal ID: ISSN 0277-786X
Publisher:
SPIE
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS; ions; silicon; ion implantation

Citation Formats

Schenkel, Thomas, Meijer, J., Persaud, Arun, McDonald, Joe W., Holder, J. P., and Schneider, Dieter H. Single-ion implantation for solid state quantum computer development. United States: N. p., 2002. Web. doi:10.1117/12.460808.
Schenkel, Thomas, Meijer, J., Persaud, Arun, McDonald, Joe W., Holder, J. P., & Schneider, Dieter H. Single-ion implantation for solid state quantum computer development. United States. doi:10.1117/12.460808.
Schenkel, Thomas, Meijer, J., Persaud, Arun, McDonald, Joe W., Holder, J. P., and Schneider, Dieter H. Thu . "Single-ion implantation for solid state quantum computer development". United States. doi:10.1117/12.460808. https://www.osti.gov/servlets/purl/1464151.
@article{osti_1464151,
title = {Single-ion implantation for solid state quantum computer development},
author = {Schenkel, Thomas and Meijer, J. and Persaud, Arun and McDonald, Joe W. and Holder, J. P. and Schneider, Dieter H.},
abstractNote = {Several solid state quantum computer schemes are based on the manipulation of electron and nuclear spins of single donor atoms in a solid matrix. The fabrication of qubit arrays requires the placement of individual atoms with nanometer precision and high efficiency. In this paper we describe first results from low dose, low energy implantations and our development of a low energy (<10 keV), single ion implantation scheme for 31Pq+ ions. When 31Pq+ ions impinge on a wafer surface, their potential energy (9.3 keV for P15+) is released, and about 20 secondary electrons are emitted. The emission of multiple secondary electrons allows detection of each ion impact with 100% efficiency. The beam spot on target is controlled by beam focusing and collimation. Finally, exactly one ion is implanted into a selected area avoiding a Poissonian distribution of implanted ions.},
doi = {10.1117/12.460808},
journal = {Proceedings of SPIE - The International Society for Optical Engineering},
number = ,
volume = 4656,
place = {United States},
year = {2002},
month = {3}
}

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Cited by: 6 works
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