Ultrahigh Conductivity in Two-Dimensional InSe via Remote Doping at Room Temperature
Abstract
Conductivity of two-dimenstional (2D) materials, which largely determines the efficiency and reliability of nanodevices, is proportional to the product of carrier concentration and mobility. Conventional doping, such as ionic substitution or introduction of vacancies, increases carrier concentration and decreases carrier mobility due to the scattering or trapping of carriers. In this paper, we propose a remote-doping strategy that enables the simultaneous enhancement of both parameters. Density functional theory calculations in 2D InSe reveal that adsorbing the molecule tetrathiafulvalene (TTF) and applying a 4% external tensile strain leads to an increase in the carrier concentration of the TTF-InSe system that is 13 orders of magnitude higher than that of the pristine counterpart, whereas the carrier mobility is enhanced by 35% compared with the InSe monolayer. Finally, as a consequence of the synergetic role of molecule doping and strain engineering, ultrahigh conductivity of 1.85 × 105 S/m is achieved in the TTF-InSe system at room temperature.
- Authors:
-
[2];
[1];
[1]
- Nanjing Univ. of Science and Technology (China). Nano and Heterogeneous Materials Center. School of Materials Science and Engineering
- Nanjing Univ. of Science and Technology (China). School of Materials Science and Engineering
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences. Computational Sciences and Engineering Division
- Publication Date:
- Research Org.:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC); National Natural Science Foundation of China (NSFC); Fundamental Research Funds for the Central Universities (China)
- OSTI Identifier:
- 1464001
- Grant/Contract Number:
- AC05-00OR22725; 51602155; 51722102; 21773120; 30918011340; 30917011201
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Physical Chemistry Letters
- Additional Journal Information:
- Journal Volume: 9; Journal Issue: 14; Journal ID: ISSN 1948-7185
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Liu, Xinyi, Ren, Ji-Chang, Zhang, Shufang, Fuentes-Cabrera, Miguel, Li, Shuang, and Liu, Wei. Ultrahigh Conductivity in Two-Dimensional InSe via Remote Doping at Room Temperature. United States: N. p., 2018.
Web. doi:10.1021/acs.jpclett.8b01589.
Liu, Xinyi, Ren, Ji-Chang, Zhang, Shufang, Fuentes-Cabrera, Miguel, Li, Shuang, & Liu, Wei. Ultrahigh Conductivity in Two-Dimensional InSe via Remote Doping at Room Temperature. United States. https://doi.org/10.1021/acs.jpclett.8b01589
Liu, Xinyi, Ren, Ji-Chang, Zhang, Shufang, Fuentes-Cabrera, Miguel, Li, Shuang, and Liu, Wei. Thu .
"Ultrahigh Conductivity in Two-Dimensional InSe via Remote Doping at Room Temperature". United States. https://doi.org/10.1021/acs.jpclett.8b01589. https://www.osti.gov/servlets/purl/1464001.
@article{osti_1464001,
title = {Ultrahigh Conductivity in Two-Dimensional InSe via Remote Doping at Room Temperature},
author = {Liu, Xinyi and Ren, Ji-Chang and Zhang, Shufang and Fuentes-Cabrera, Miguel and Li, Shuang and Liu, Wei},
abstractNote = {Conductivity of two-dimenstional (2D) materials, which largely determines the efficiency and reliability of nanodevices, is proportional to the product of carrier concentration and mobility. Conventional doping, such as ionic substitution or introduction of vacancies, increases carrier concentration and decreases carrier mobility due to the scattering or trapping of carriers. In this paper, we propose a remote-doping strategy that enables the simultaneous enhancement of both parameters. Density functional theory calculations in 2D InSe reveal that adsorbing the molecule tetrathiafulvalene (TTF) and applying a 4% external tensile strain leads to an increase in the carrier concentration of the TTF-InSe system that is 13 orders of magnitude higher than that of the pristine counterpart, whereas the carrier mobility is enhanced by 35% compared with the InSe monolayer. Finally, as a consequence of the synergetic role of molecule doping and strain engineering, ultrahigh conductivity of 1.85 × 105 S/m is achieved in the TTF-InSe system at room temperature.},
doi = {10.1021/acs.jpclett.8b01589},
journal = {Journal of Physical Chemistry Letters},
number = 14,
volume = 9,
place = {United States},
year = {Thu Jun 28 00:00:00 EDT 2018},
month = {Thu Jun 28 00:00:00 EDT 2018}
}
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Works referenced in this record:
Intrinsic Electron Mobility Exceeding 10 3 cm 2 /(V s) in Multilayer InSe FETs
journal, May 2015
- Sucharitakul, Sukrit; Goble, Nicholas J.; Kumar, U. Rajesh
- Nano Letters, Vol. 15, Issue 6
Cyclotron resonance studies on bulk and two-dimensional conduction electrons in InSe
journal, October 1982
- Kress-Rogers, E.; Nicholas, R. J.; Portal, J. C.
- Solid State Communications, Vol. 44, Issue 3
High-Mobility InSe Transistors: The Role of Surface Oxides
journal, July 2017
- Ho, Po-Hsun; Chang, Yih-Ren; Chu, Yu-Cheng
- ACS Nano, Vol. 11, Issue 7
Combustion synthesis of InSe, In 2 Se 3 , and GaSe
journal, September 2017
- Liu, Guanghua; Chen, Kexin; Li, Jiangtao
- Journal of the American Ceramic Society, Vol. 101, Issue 1
Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement
journal, August 2013
- Mudd, Garry W.; Svatek, Simon A.; Ren, Tianhang
- Advanced Materials, Vol. 25, Issue 40
High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe
journal, November 2016
- Bandurin, Denis A.; Tyurnina, Anastasia V.; Yu, Geliang L.
- Nature Nanotechnology, Vol. 12, Issue 3
High Performance and Bendable Few-Layered InSe Photodetectors with Broad Spectral Response
journal, April 2014
- Tamalampudi, Srinivasa Reddy; Lu, Yi-Ying; Kumar U., Rajesh
- Nano Letters, Vol. 14, Issue 5
Evolution of the Electronic Band Structure and Efficient Photo-Detection in Atomic Layers of InSe
journal, January 2014
- Lei, Sidong; Ge, Liehui; Najmaei, Sina
- ACS Nano, Vol. 8, Issue 2
The influence of chemical reactivity of surface defects on ambient-stable InSe-based nanodevices
journal, January 2016
- Politano, A.; Chiarello, G.; Samnakay, R.
- Nanoscale, Vol. 8, Issue 16
Defects and oxidation resilience in InSe
journal, August 2017
- Xiao, K. J.; Carvalho, A.; Castro Neto, A. H.
- Physical Review B, Vol. 96, Issue 5
Native defects and substitutional impurities in two-dimensional monolayer InSe
journal, January 2017
- Wang, Dan; Li, Xian-Bin; Sun, Hong-Bo
- Nanoscale, Vol. 9, Issue 32
Electron scattering mechanisms in -type indium selenide
journal, May 1984
- Segura, A.; Pomer, F.; Cantarero, A.
- Physical Review B, Vol. 29, Issue 10
Doped Nanocrystals
journal, March 2008
- Norris, D. J.; Efros, A. L.; Erwin, S. C.
- Science, Vol. 319, Issue 5871
Remote doping of a pentacene transistor: Control of charge transfer by molecular-level engineering
journal, September 2010
- Zhao, Wei; Qi, Yabing; Sajoto, Tissa
- Applied Physics Letters, Vol. 97, Issue 12
Air-Stable Surface Charge Transfer Doping of MoS 2 by Benzyl Viologen
journal, May 2014
- Kiriya, Daisuke; Tosun, Mahmut; Zhao, Peida
- Journal of the American Chemical Society, Vol. 136, Issue 22
Surface Transfer p-Type Doping of Epitaxial Graphene
journal, August 2007
- Chen, Wei; Chen, Shi; Qi, Dong Chen
- Journal of the American Chemical Society, Vol. 129, Issue 34
Strain engineering in semiconducting two-dimensional crystals
journal, July 2015
- Roldán, Rafael; Castellanos-Gomez, Andrés; Cappelluti, Emmanuele
- Journal of Physics: Condensed Matter, Vol. 27, Issue 31
Accurate and Efficient Method for Many-Body van der Waals Interactions
journal, June 2012
- Tkatchenko, Alexandre; DiStasio, Robert A.; Car, Roberto
- Physical Review Letters, Vol. 108, Issue 23
Long-range correlation energy calculated from coupled atomic response functions
journal, May 2014
- Ambrosetti, Alberto; Reilly, Anthony M.; DiStasio, Robert A.
- The Journal of Chemical Physics, Vol. 140, Issue 18
Surface transfer doping of semiconductors
journal, September 2009
- Chen, Wei; Qi, Dongchen; Gao, Xingyu
- Progress in Surface Science, Vol. 84, Issue 9-10
Accurate Molecular Van Der Waals Interactions from Ground-State Electron Density and Free-Atom Reference Data
journal, February 2009
- Tkatchenko, Alexandre; Scheffler, Matthias
- Physical Review Letters, Vol. 102, Issue 7
Quantitative Prediction of Molecular Adsorption: Structure and Binding of Benzene on Coinage Metals
journal, July 2015
- Liu, Wei; Maaß, Friedrich; Willenbockel, Martin
- Physical Review Letters, Vol. 115, Issue 3
Many-body van der Waals interactions in molecules and condensed matter
journal, May 2014
- DiStasio, Robert A.; Gobre, Vivekanand V.; Tkatchenko, Alexandre
- Journal of Physics: Condensed Matter, Vol. 26, Issue 21
Many-body dispersion effects on the binding of TCNQ and F4-TCNQ with graphene
journal, January 2017
- Yang, Sha; Jiang, Yingda; Li, Shuang
- Carbon, Vol. 111
Role of Dispersion Interactions in the Polymorphism and Entropic Stabilization of the Aspirin Crystal
journal, July 2014
- Reilly, Anthony M.; Tkatchenko, Alexandre
- Physical Review Letters, Vol. 113, Issue 5
van der Waals forces between nanoclusters: Importance of many-body effects
journal, February 2006
- Kim, Hye-Young; Sofo, Jorge O.; Velegol, Darrell
- The Journal of Chemical Physics, Vol. 124, Issue 7
Predicting Energetics of Supramolecular Systems Using the XDM Dispersion Model
journal, August 2015
- Otero-de-la-Roza, A.; Johnson, Erin R.
- Journal of Chemical Theory and Computation, Vol. 11, Issue 9
A fast and robust algorithm for Bader decomposition of charge density
journal, June 2006
- Henkelman, Graeme; Arnaldsson, Andri; Jónsson, Hannes
- Computational Materials Science, Vol. 36, Issue 3
Determination of Optical Constants and Carrier Effective Mass of Semiconductors
journal, June 1957
- Spitzer, W. G.; Fan, H. Y.
- Physical Review, Vol. 106, Issue 5
Hybrid functionals based on a screened Coulomb potential
journal, May 2003
- Heyd, Jochen; Scuseria, Gustavo E.; Ernzerhof, Matthias
- The Journal of Chemical Physics, Vol. 118, Issue 18
Strain Controlled Ferromagnetic-Antiferromagnetic Transformation in Mn-Doped Silicene for Information Transformation Devices
journal, March 2017
- Li, Shuang; Ao, Zhimin; Zhu, Jiaji
- The Journal of Physical Chemistry Letters, Vol. 8, Issue 7
High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
journal, July 2014
- Qiao, Jingsi; Kong, Xianghua; Hu, Zhi-Xin
- Nature Communications, Vol. 5, Issue 1
Deformation Potentials and Mobilities in Non-Polar Crystals
journal, October 1950
- Bardeen, J.; Shockley, W.
- Physical Review, Vol. 80, Issue 1
Intrinsic concentration, effective densities of states, and effective mass in silicon
journal, March 1990
- Green, Martin A.
- Journal of Applied Physics, Vol. 67, Issue 6
Single-Layer Group-III Monochalcogenide Photocatalysts for Water Splitting
journal, July 2013
- Zhuang, Houlong L.; Hennig, Richard G.
- Chemistry of Materials, Vol. 25, Issue 15
Deformation potential constants of biaxially tensile stressed epitaxial films on
journal, October 2004
- Liu, Jifeng; Cannon, Douglas D.; Wada, Kazumi
- Physical Review B, Vol. 70, Issue 15
Electrical contacts to two-dimensional semiconductors
journal, November 2015
- Allain, Adrien; Kang, Jiahao; Banerjee, Kaustav
- Nature Materials, Vol. 14, Issue 12
Electrical properties of semimetallic silicon III and semiconductive silicon IV at ambient pressure
journal, July 1987
- Besson, J. M.; Mokhtari, E. H.; Gonzalez, J.
- Physical Review Letters, Vol. 59, Issue 4
Construction of graphdiyne nanowires with high-conductivity and mobility
journal, January 2012
- Qian, Xuemin; Ning, Zhiyuan; Li, Yuliang
- Dalton Trans., Vol. 41, Issue 3
Surface Charge Transfer Doping via Transition Metal Oxides for Efficient p-Type Doping of II–VI Nanostructures
journal, November 2016
- Xia, Feifei; Shao, Zhibin; He, Yuanyuan
- ACS Nano, Vol. 10, Issue 11
Impurity band in lithium-diffused and annealed GaAs: Conductivity and Hall effect measurements
journal, May 2003
- Svavarsson, H. G.; Gudmundsson, J. T.; Gislason, H. P.
- Physical Review B, Vol. 67, Issue 20
Mobility engineering and a metal–insulator transition in monolayer MoS2
journal, June 2013
- Radisavljevic, Branimir; Kis, Andras
- Nature Materials, Vol. 12, Issue 9
Modulation-doped GaAs/AlGaAs heterojunction field-effect transistors (MODFET's), ultrahigh-speed device for supercomputers
journal, August 1984
- Solomon, P. M.; Morkoc, H.
- IEEE Transactions on Electron Devices, Vol. 31, Issue 8
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996
- Kresse, G.; Furthmüller, J.
- Physical Review B, Vol. 54, Issue 16, p. 11169-11186
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996
- Kresse, G.; Furthmüller, J.
- Computational Materials Science, Vol. 6, Issue 1, p. 15-50
Generalized Gradient Approximation Made Simple
journal, October 1996
- Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
- Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999
- Kresse, G.; Joubert, D.
- Physical Review B, Vol. 59, Issue 3, p. 1758-1775
Special points for Brillouin-zone integrations
journal, June 1976
- Monkhorst, Hendrik J.; Pack, James D.
- Physical Review B, Vol. 13, Issue 12, p. 5188-5192
Works referencing / citing this record:
The role of traps in the photocurrent generation mechanism in thin InSe photodetectors
journal, January 2020
- Zhao, Qinghua; Wang, Wei; Carrascoso-Plana, Felix
- Materials Horizons, Vol. 7, Issue 1
Electronic and optical properties of bilayer SnS with different stacking orders: A first principles study
journal, December 2018
- Zhang, J.; Lang, X. Y.; Jiang, Q.
- Journal of Applied Physics, Vol. 124, Issue 23
The role of traps in the photocurrent generation mechanism in thin In-Se photodetectors
text, January 2020
- Zhao, Qinghua; Wang, Wei; Carrascoso-Plana, Felix
- arXiv