skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

Authors:
ORCiD logo [1];  [2];  [3];  [4];  [5];  [6];  [7];  [8];  [9];  [10];  [5];  [11];  [12];  [13];  [14];  [15];  [16];  [17];  [18];  [19] more »;  [20];  [21];  [22];  [14];  [23];  [24];  [25];  [26];  [27];  [22];  [28];  [29];  [30] « less
  1. Material, Physical, and Chemical Sciences Center, Sandia National Laboratories, PO Box 5800 Albuquerque NM 87185-1421 USA
  2. Electrical and Computer Engineering Department, University of California Davis, 3133 Kemper Hall Davis CA 95616 USA
  3. Advanced Technology Division, MIT Lincoln Laboratory, 244 Wood Street Lexington MA 02421-6426 USA
  4. Electrical and Computer Engineering and Materials Science and Engineering Departments, Cornell University, 326 Bard Hall Ithaca NY 14853 USA
  5. Electronic Materials and Devices Laboratory, PARC, 3333 Coyote Hill Road Palo Alto CA 94303 USA
  6. Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, 2800 Powder Mill Road Delphi MD 20783 USA
  7. Material, Physical, and Chemical Sciences Center, Sandia National Laboratories, PO Box 5800 Albuquerque NM 87185-1086 USA
  8. Electrical and Computer Engineering and Materials Science and Engineering Departments, Ohio State University, 2015 Neil Avenue, 205 Dreese Laboratory Columbus OH 43210 USA
  9. Materials Department, University of California Santa Barbara, 2510 Engineering II Santa Barbara CA 93106-5050 USA
  10. Electrical and Computer Engineering Department, Boston University, 8 St. Mary's Street Room 533 Boston MA 02215 USA
  11. Materials Science and Engineering Department, North Carolina State University, 911 Partners Way (EBI 219) Raleigh NC 27695 USA
  12. Material, Physical, and Chemical Sciences Center, Sandia National Laboratories, PO Box 5800 Albuquerque NM 87185 USA
  13. Electrical and Computer Engineering Department, Purdue University, 1205 West State Street West Lafayette IN 47906 USA
  14. Kyma Technologies, Inc., 8829 Midway West Rd Raleigh NC 27617 USA
  15. Mechanical Engineering Department, Georgia Institute of Technology, 771 Ferst Drive Atlanta GA 30332 USA
  16. Electrical and Computer Engineering Department, Michigan State University, 2120 Engineering Building East Lansing MI 48824 USA
  17. Materials and Manufacturing Directorate, Air Force Research Laboratory, 3005 Hobson Way WPAFB OH 45433 USA
  18. Green ICT Device Advanced Development Center, National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi Koganei Tokyo 184-0015 Japan
  19. Electrical and Computer Engineering Department, University of California at Davis, 3139 Kemper Hall Davis CA 95616 USA
  20. Quantum Information and Integrated Nanosystems Group, MIT Lincoln Laboratory, 244 Wood Street Lexington MA 02421-6426 USA
  21. Electrical Engineering Department, University of South Carolina, 301 Main Street (Swearingen 3A26) Columbia SC 29208 USA
  22. High Power Electronics Branch, Naval Research Laboratory, 4555 Overlook Ave SW Washington DC 20375 USA
  23. Electrical and Computer Engineering Department, University of California Santa Barbara, 2215C Engineering Science Building Santa Barbara CA 93106 USA
  24. Physics Department, Arizona State University, PO Box 871504 Tempe AZ 85287-1504 USA
  25. Electrical and Computer Engineering, University of Illinois Urbana-Champaign, 306 North Wright Street (4042 ECE) Urbana, Illinois 61801 USA
  26. Akoustis Technologies, 9805-H Northcross Center Court Huntersville NC 28078 USA
  27. Materials Science and Engineering Department, North Carolina State University, 911 Partners Way (EBI 217) Raleigh NC 27695 USA
  28. Electrical Engineering Department, Vanderbilt University, 1025 16th Av. South, Ste. 200 Nashville TN 37235-1553 USA
  29. Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, 2800 Powder Mill Road Adelphi MD 20783 USA
  30. Advanced Science and Technology Division, Sandia National Laboratories, PO Box 5800 Albuquerque NM 87185-1421 USA
Publication Date:
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1463923
Alternate Identifier(s):
OSTI ID: 1411257
Grant/Contract Number:  
NA-0003525; FA8721-05-C-0002; FA8702-15-D-0001
Resource Type:
Published Article
Journal Name:
Advanced Electronic Materials
Additional Journal Information:
Journal Name: Advanced Electronic Materials Journal Volume: 4 Journal Issue: 1; Journal ID: ISSN 2199-160X
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
United States
Language:
English

Citation Formats

Tsao, J. Y., Chowdhury, S., Hollis, M. A., Jena, D., Johnson, N. M., Jones, K. A., Kaplar, R. J., Rajan, S., Van de Walle, C. G., Bellotti, E., Chua, C. L., Collazo, R., Coltrin, M. E., Cooper, J. A., Evans, K. R., Graham, S., Grotjohn, T. A., Heller, E. R., Higashiwaki, M., Islam, M. S., Juodawlkis, P. W., Khan, M. A., Koehler, A. D., Leach, J. H., Mishra, U. K., Nemanich, R. J., Pilawa-Podgurski, R. C. N., Shealy, J. B., Sitar, Z., Tadjer, M. J., Witulski, A. F., Wraback, M., and Simmons, J. A. Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges. United States: N. p., 2017. Web. doi:10.1002/aelm.201600501.
Tsao, J. Y., Chowdhury, S., Hollis, M. A., Jena, D., Johnson, N. M., Jones, K. A., Kaplar, R. J., Rajan, S., Van de Walle, C. G., Bellotti, E., Chua, C. L., Collazo, R., Coltrin, M. E., Cooper, J. A., Evans, K. R., Graham, S., Grotjohn, T. A., Heller, E. R., Higashiwaki, M., Islam, M. S., Juodawlkis, P. W., Khan, M. A., Koehler, A. D., Leach, J. H., Mishra, U. K., Nemanich, R. J., Pilawa-Podgurski, R. C. N., Shealy, J. B., Sitar, Z., Tadjer, M. J., Witulski, A. F., Wraback, M., & Simmons, J. A. Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges. United States. doi:10.1002/aelm.201600501.
Tsao, J. Y., Chowdhury, S., Hollis, M. A., Jena, D., Johnson, N. M., Jones, K. A., Kaplar, R. J., Rajan, S., Van de Walle, C. G., Bellotti, E., Chua, C. L., Collazo, R., Coltrin, M. E., Cooper, J. A., Evans, K. R., Graham, S., Grotjohn, T. A., Heller, E. R., Higashiwaki, M., Islam, M. S., Juodawlkis, P. W., Khan, M. A., Koehler, A. D., Leach, J. H., Mishra, U. K., Nemanich, R. J., Pilawa-Podgurski, R. C. N., Shealy, J. B., Sitar, Z., Tadjer, M. J., Witulski, A. F., Wraback, M., and Simmons, J. A. Mon . "Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges". United States. doi:10.1002/aelm.201600501.
@article{osti_1463923,
title = {Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges},
author = {Tsao, J. Y. and Chowdhury, S. and Hollis, M. A. and Jena, D. and Johnson, N. M. and Jones, K. A. and Kaplar, R. J. and Rajan, S. and Van de Walle, C. G. and Bellotti, E. and Chua, C. L. and Collazo, R. and Coltrin, M. E. and Cooper, J. A. and Evans, K. R. and Graham, S. and Grotjohn, T. A. and Heller, E. R. and Higashiwaki, M. and Islam, M. S. and Juodawlkis, P. W. and Khan, M. A. and Koehler, A. D. and Leach, J. H. and Mishra, U. K. and Nemanich, R. J. and Pilawa-Podgurski, R. C. N. and Shealy, J. B. and Sitar, Z. and Tadjer, M. J. and Witulski, A. F. and Wraback, M. and Simmons, J. A.},
abstractNote = {},
doi = {10.1002/aelm.201600501},
journal = {Advanced Electronic Materials},
number = 1,
volume = 4,
place = {United States},
year = {2017},
month = {12}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1002/aelm.201600501

Citation Metrics:
Cited by: 68 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Interface trap characterization of atomic layer deposition Al 2 O 3 /GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies
journal, May 2013

  • Jackson, Christine M.; Arehart, Aaron R.; Cinkilic, Emre
  • Journal of Applied Physics, Vol. 113, Issue 20
  • DOI: 10.1063/1.4808093

Two-dimensional gallium nitride realized via graphene encapsulation
journal, August 2016

  • Al Balushi, Zakaria Y.; Wang, Ke; Ghosh, Ram Krishna
  • Nature Materials, Vol. 15, Issue 11
  • DOI: 10.1038/nmat4742

Nanosecond Timescale Thermal Dynamics of AlGaN/GaN Electronic Devices
journal, May 2008

  • Riedel, G. J.; Pomeroy, J. W.; Hilton, K. P.
  • IEEE Electron Device Letters, Vol. 29, Issue 5
  • DOI: 10.1109/LED.2008.919779

Ultraviolet semiconductor laser diodes on bulk AlN
journal, June 2007

  • Kneissl, Michael; Yang, Zhihong; Teepe, Mark
  • Journal of Applied Physics, Vol. 101, Issue 12
  • DOI: 10.1063/1.2747546

Simultaneous growth of a GaN p∕n lateral polarity junction by polar selective doping
journal, November 2007

  • Collazo, R.; Mita, S.; Rice, A.
  • Applied Physics Letters, Vol. 91, Issue 21
  • DOI: 10.1063/1.2816893

Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
journal, June 2007

  • Krames, Michael R.; Shchekin, Oleg B.; Mueller-Mach, Regina
  • Journal of Display Technology, Vol. 3, Issue 2, p. 160-175
  • DOI: 10.1109/JDT.2007.895339

Ge-Doped ${\beta }$ -Ga2O3 MOSFETs
journal, June 2017

  • Moser, Neil; McCandless, Jonathan; Crespo, Antonio
  • IEEE Electron Device Letters, Vol. 38, Issue 6
  • DOI: 10.1109/LED.2017.2697359

An AlN/Al 0.85 Ga 0.15 N high electron mobility transistor
journal, July 2016

  • Baca, Albert G.; Armstrong, Andrew M.; Allerman, Andrew A.
  • Applied Physics Letters, Vol. 109, Issue 3
  • DOI: 10.1063/1.4959179

Large-area high-quality single crystal diamond
journal, June 2014

  • Schreck, Matthias; Asmussen, Jes; Shikata, Shinichi
  • MRS Bulletin, Vol. 39, Issue 6
  • DOI: 10.1557/mrs.2014.96

Diamond surface conductivity: Properties, devices, and sensors
journal, June 2014

  • Pakes, Christopher I.; Garrido, Jose A.; Kawarada, Hiroshi
  • MRS Bulletin, Vol. 39, Issue 6
  • DOI: 10.1557/mrs.2014.95

Interband tunneling for hole injection in III-nitride ultraviolet emitters
journal, April 2015

  • Zhang, Yuewei; Krishnamoorthy, Sriram; Johnson, Jared M.
  • Applied Physics Letters, Vol. 106, Issue 14
  • DOI: 10.1063/1.4917529

Gallium oxide (Ga 2 O 3 ) metal-semiconductor field-effect transistors on single-crystal β-Ga 2 O 3 (010) substrates
journal, January 2012

  • Higashiwaki, Masataka; Sasaki, Kohei; Kuramata, Akito
  • Applied Physics Letters, Vol. 100, Issue 1
  • DOI: 10.1063/1.3674287

A highly efficient single-photon source based on a quantum dot in a photonic nanowire
journal, January 2010


Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor
journal, January 1999

  • Zhang, Yifei; Singh, Jasprit
  • Journal of Applied Physics, Vol. 85, Issue 1
  • DOI: 10.1063/1.369493

The Impact of Bias Conditions on Self-Heating in AlGaN/GaN HEMTs
journal, January 2013

  • Choi, Sukwon; Heller, Eric R.; Dorsey, Donald
  • IEEE Transactions on Electron Devices, Vol. 60, Issue 1
  • DOI: 10.1109/TED.2012.2224115

Interfacial charge effects on electron transport in III-Nitride metal insulator semiconductor transistors
journal, October 2011

  • Hung, Ting-Hsiang; Esposto, Michele; Rajan, Siddharth
  • Applied Physics Letters, Vol. 99, Issue 16
  • DOI: 10.1063/1.3653805

Experimental electronic structure of In 2 O 3 and Ga 2 O 3
journal, August 2011


High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates
journal, April 2015

  • Bryan, Zachary; Bryan, Isaac; Xie, Jinqiao
  • Applied Physics Letters, Vol. 106, Issue 14
  • DOI: 10.1063/1.4917540

TEMPERATURE DEPENDENCE AND MODEL OF THE ELECTRO‐OPTIC EFFECT IN LiNbO 3
journal, September 1967

  • Zook, J. D.; Chen, D.; Otto, G. N.
  • Applied Physics Letters, Vol. 11, Issue 5
  • DOI: 10.1063/1.1755078

Synthesis of the Cubic Form of Boron Nitride
journal, March 1961

  • Wentorf, R. H.
  • The Journal of Chemical Physics, Vol. 34, Issue 3, p. 809-812
  • DOI: 10.1063/1.1731679

Resistivity of chemical vapor deposited diamond films
journal, September 1989

  • Landstrass, M. I.; Ravi, K. V.
  • Applied Physics Letters, Vol. 55, Issue 10
  • DOI: 10.1063/1.101694

Modeling of high composition AlGaN channel high electron mobility transistors with large threshold voltage
journal, December 2014

  • Bajaj, Sanyam; Hung, Ting-Hsiang; Akyol, Fatih
  • Applied Physics Letters, Vol. 105, Issue 26
  • DOI: 10.1063/1.4905323

GaN-Based RF Power Devices and Amplifiers
journal, February 2008


Semiconducting cubic boron nitride
journal, February 1998


Single crystal aluminum nitride film bulk acoustic resonators
conference, January 2016

  • Shealy, James B.; Shealy, Jeffrey B.; Patel, Pinal
  • 2016 IEEE Radio and Wireless Symposium (RWS)
  • DOI: 10.1109/RWS.2016.7444351

InAlN/GaN HEMTs for Operation in the 1000 $^{\circ} \hbox{C}$ Regime: A First Experiment
journal, July 2012


Out-of-plane high-Q inductors on low-resistance silicon
journal, December 2003

  • Chua, C. L.; Fork, D. K.; Van Schuylenbergh, K.
  • Journal of Microelectromechanical Systems, Vol. 12, Issue 6
  • DOI: 10.1109/JMEMS.2003.820274

AlGaN/GaN-based MEMS with two-dimensional electron gas for novel sensor applications
journal, May 2008

  • Niebelschütz, F.; Cimalla, V.; Tonisch, K.
  • physica status solidi (c), Vol. 5, Issue 6
  • DOI: 10.1002/pssc.200778424

Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors
journal, June 2008

  • Nanjo, Takuma; Takeuchi, Misaichi; Suita, Muneyoshi
  • Applied Physics Letters, Vol. 92, Issue 26
  • DOI: 10.1063/1.2949087

Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys
journal, December 2002

  • Jena, Debdeep; Heikman, Sten; Green, Daniel
  • Applied Physics Letters, Vol. 81, Issue 23
  • DOI: 10.1063/1.1526161

Increased electron mobility in n-type Si-doped AlN by reducing dislocation density
journal, October 2006

  • Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki
  • Applied Physics Letters, Vol. 89, Issue 18
  • DOI: 10.1063/1.2378726

An In 0.15 Ga 0.85 As/GaAs pseudomorphic single quantum well HEMT
journal, October 1985

  • Rosenberg, J. J.; Benlamri, M.; Kirchner, P. D.
  • IEEE Electron Device Letters, Vol. 6, Issue 10
  • DOI: 10.1109/EDL.1985.26205

High temperature Pt Schottky diode gas sensors on n-type GaN
journal, July 1999


( In x Ga 1 x ) 2 O 3 alloys for transparent electronics
journal, August 2015


Nonlinear optical susceptibilities of AlN film
journal, December 1977

  • Fujii, Y.; Yoshida, S.; Misawa, S.
  • Applied Physics Letters, Vol. 31, Issue 12
  • DOI: 10.1063/1.89550

Growth of BN by hot filament assisted electron beam deposition
journal, October 1993


Sulfur doping of AlN and AlGaN for improved n-type conductivity: Sulfur doping of AlN and AlGaN for improved n-type conductivity
journal, July 2015

  • Gordon, Luke; Varley, Joel B.; Lyons, John L.
  • physica status solidi (RRL) - Rapid Research Letters, Vol. 9, Issue 8
  • DOI: 10.1002/pssr.201510165

First-principles calculations for point defects in solids
journal, March 2014

  • Freysoldt, Christoph; Grabowski, Blazej; Hickel, Tilmann
  • Reviews of Modern Physics, Vol. 86, Issue 1
  • DOI: 10.1103/RevModPhys.86.253

Ni/Au Schottky diodes on AlxGa1-xN (0.7<x<1) grown on AlN single crystal substrates
journal, June 2011

  • Xie, Jinqiao; Mia, Seiji; Dalmau, Rafael
  • physica status solidi (c), Vol. 8, Issue 7-8
  • DOI: 10.1002/pssc.201001009

Full-Wafer Characterization of AlGaN/GaN HEMTs on Free-Standing CVD Diamond Substrates
journal, February 2010

  • Chabak, K. D.; Gillespie, J. K.; Miller, V.
  • IEEE Electron Device Letters, Vol. 31, Issue 2
  • DOI: 10.1109/LED.2009.2036574

Nobel Lecture: Quasielectric fields and band offsets: teaching electrons new tricks
journal, October 2001


Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz
journal, November 2015

  • Chao, Pane-Chane; Chu, Kenneth; Creamer, Carlton
  • IEEE Transactions on Electron Devices, Vol. 62, Issue 11
  • DOI: 10.1109/TED.2015.2480756

CVD diamond for spintronics
journal, February 2011


Preparation of c-BN containing films by reactive r.f. sputtering
journal, May 1993


Growth of β-Ga 2 O 3 Single Crystals by the Edge-Defined, Film Fed Growth Method
journal, November 2008

  • Aida, Hideo; Nishiguchi, Kengo; Takeda, Hidetoshi
  • Japanese Journal of Applied Physics, Vol. 47, Issue 11
  • DOI: 10.1143/JJAP.47.8506

An X-ray study of boron nitride
journal, May 1952


Addressing Single Nitrogen-Vacancy Centers in Diamond with Transparent in-Plane Gate Structures
journal, April 2014

  • Hauf, Moritz V.; Simon, Patrick; Aslam, Nabeel
  • Nano Letters, Vol. 14, Issue 5
  • DOI: 10.1021/nl4047619

3D-Transistor Array Based on Horizontally Suspended Silicon Nano-bridges Grown via a Bottom-Up Technique
journal, January 2014

  • Oh, Jin Yong; Park, Jong-Tae; Jang, Hyun-June
  • Advanced Materials, Vol. 26, Issue 12
  • DOI: 10.1002/adma.201304245

High voltage and high current density vertical GaN power diodes
journal, June 2016

  • Fischer, A. J.; Dickerson, J. R.; Armstrong, A. M.
  • Electronics Letters, Vol. 52, Issue 13
  • DOI: 10.1049/el.2016.1156

An Investigation on Border Traps in III–V MOSFETs With an In 0.53 Ga 0.47 As Channel
journal, November 2015

  • Ji, Zhigang; Zhang, Xiong; Franco, Jacopo
  • IEEE Transactions on Electron Devices, Vol. 62, Issue 11
  • DOI: 10.1109/TED.2015.2475604

High frequency piezoelectric micromachined ultrasonic transducer array for intravascular ultrasound imaging
conference, January 2014

  • Lu, Yipeng; Heidari, Amir; Shelton, Stefon
  • 2014 IEEE 27th International Conference on Micro Electro Mechanical Systems (MEMS)
  • DOI: 10.1109/MEMSYS.2014.6765748

Band diagram of the AlF3∕SiO2∕Si system
journal, May 2005

  • König, D.; Scholz, R.; Zahn, D. R. T.
  • Journal of Applied Physics, Vol. 97, Issue 9
  • DOI: 10.1063/1.1886909

Spectroscopic investigations of band offsets of MgO|AlxGa1-xN epitaxial heterostructures with varying AlN content
journal, September 2015

  • Paisley, Elizabeth A.; Brumbach, Michael; Allerman, Andrew A.
  • Applied Physics Letters, Vol. 107, Issue 10
  • DOI: 10.1063/1.4930309

High Voltage Vertical GaN p-n Diodes With Avalanche Capability
journal, October 2013

  • Kizilyalli, Isik C.; Edwards, Andrew P.; Nie, Hui
  • IEEE Transactions on Electron Devices, Vol. 60, Issue 10
  • DOI: 10.1109/TED.2013.2266664

Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs
journal, December 2012

  • Akturk, A.; McGarrity, J. M.; Potbhare, S.
  • IEEE Transactions on Nuclear Science, Vol. 59, Issue 6
  • DOI: 10.1109/TNS.2012.2223763

A 2 kW, single-phase, 7-level, GaN inverter with an active energy buffer achieving 216 W/in3 power density and 97.6% peak efficiency
conference, March 2016

  • Lei, Yutian; Barth, Christopher; Qin, Shibin
  • 2016 IEEE Applied Power Electronics Conference and Exposition (APEC)
  • DOI: 10.1109/APEC.2016.7468068

An integrated diamond nanophotonics platform for quantum-optical networks
journal, October 2016


Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping
journal, May 2008

  • Víllora, Encarnación G.; Shimamura, Kiyoshi; Yoshikawa, Yukio
  • Applied Physics Letters, Vol. 92, Issue 20
  • DOI: 10.1063/1.2919728

Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
journal, February 1999


Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices
journal, December 2011

  • Taniyasu, Yoshitaka; Kasu, Makoto
  • Applied Physics Letters, Vol. 99, Issue 25
  • DOI: 10.1063/1.3671668

Nitrogen-Vacancy Centers in Diamond: Nanoscale Sensors for Physics and Biology
journal, April 2014


Spontaneous polarization model for surface orientation dependence of diamond hole accumulation layer and its transistor performance
journal, March 2008

  • Hirama, K.; Takayanagi, H.; Yamauchi, S.
  • Applied Physics Letters, Vol. 92, Issue 11
  • DOI: 10.1063/1.2889947

Optically pumped InGaN/GaN double heterostructure lasers with cleaved facets
journal, January 1998

  • Stocker, D.; Schubert, E. F.; Boutros, K. S.
  • Electronics Letters, Vol. 34, Issue 4
  • DOI: 10.1049/el:19980323

High-voltage field effect transistors with wide-bandgap β -Ga 2 O 3 nanomembranes
journal, May 2014

  • Hwang, Wan Sik; Verma, Amit; Peelaers, Hartwin
  • Applied Physics Letters, Vol. 104, Issue 20
  • DOI: 10.1063/1.4879800

Next-Generation Lighting Initiative at the U.S. Department of Energy: Catalyzing Science Into the Marketplace
journal, June 2007


AlGaN channel field effect transistors with graded heterostructure ohmic contacts
journal, September 2016

  • Bajaj, Sanyam; Akyol, Fatih; Krishnamoorthy, Sriram
  • Applied Physics Letters, Vol. 109, Issue 13
  • DOI: 10.1063/1.4963860

High-excitation and high-resolution photoluminescence spectra of bulk AlN
journal, August 2010


Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells
journal, January 2012

  • Northrup, J. E.; Chua, C. L.; Yang, Z.
  • Applied Physics Letters, Vol. 100, Issue 2
  • DOI: 10.1063/1.3675451

Scaling-Up of Bulk β-Ga 2 O 3 Single Crystals by the Czochralski Method
journal, September 2016

  • Galazka, Zbigniew; Uecker, Reinhard; Klimm, Detlef
  • ECS Journal of Solid State Science and Technology, Vol. 6, Issue 2
  • DOI: 10.1149/2.0021702jss

Electron Mobility in Inversion and Accumulation Layers on Thermally Oxidized Silicon Surfaces
journal, August 1980


A Fully Integrated Inductor-Based GaN Boost Converter With Self-Generated Switching Signal for Vehicular Applications
journal, August 2016

  • Choi, Pilsoon; Radhakrishna, Ujwal; Boon, Chirn-Chye
  • IEEE Transactions on Power Electronics, Vol. 31, Issue 8
  • DOI: 10.1109/TPEL.2016.2518183

Toward Smart and Ultra-efficient Solid-State Lighting
journal, June 2014

  • Tsao, Jeffrey Y.; Crawford, Mary H.; Coltrin, Michael E.
  • Advanced Optical Materials, Vol. 2, Issue 9
  • DOI: 10.1002/adom.201400131

Deep-level optical spectroscopy in GaAs
journal, May 1981


Analyses on Cleanroom-Free Performance and Transistor Manufacturing Cycle Time of Minimal Fab
journal, November 2015

  • Khumpuang, Sommawan; Imura, Fumito; Hara, Shiro
  • IEEE Transactions on Semiconductor Manufacturing, Vol. 28, Issue 4
  • DOI: 10.1109/TSM.2015.2487324

In situ measurements of the critical thickness for strain relaxation in AlGaN∕GaN heterostructures
journal, December 2004

  • Lee, S. R.; Koleske, D. D.; Cross, K. C.
  • Applied Physics Letters, Vol. 85, Issue 25
  • DOI: 10.1063/1.1840111

Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films
journal, January 2012

  • Tadjer, Marko J.; Anderson, Travis J.; Hobart, Karl D.
  • IEEE Electron Device Letters, Vol. 33, Issue 1
  • DOI: 10.1109/LED.2011.2171031

High Detection Sensitivity of Ultraviolet 4H-SiC Avalanche Photodiodes
journal, December 2007

  • Bai, Xiaogang; Guo, Xiangyi; Mcintosh, Dion C.
  • IEEE Journal of Quantum Electronics, Vol. 43, Issue 12
  • DOI: 10.1109/JQE.2007.905031

Pyroelectric aluminum nitride micro electromechanical systems infrared sensor with wavelength-selective infrared absorber
journal, March 2014

  • Yamamoto, Kansho; Goericke, Fabian; Guedes, Andre
  • Applied Physics Letters, Vol. 104, Issue 11
  • DOI: 10.1063/1.4869442

Generation, transport and detection of valley-polarized electrons in diamond
journal, July 2013

  • Isberg, Jan; Gabrysch, Markus; Hammersberg, Johan
  • Nature Materials, Vol. 12, Issue 8
  • DOI: 10.1038/nmat3694

The role of surface kinetics on composition and quality of AlGaN
journal, October 2016


STABLE HIGH POWER GaN - ON - GaN HEMT
journal, September 2004

  • Chu, K. K.; Chao, P. C.; Windyka, J. A.
  • International Journal of High Speed Electronics and Systems, Vol. 14, Issue 03
  • DOI: 10.1142/S0129156404002764

Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode
journal, December 2008

  • Yoshida, Harumasa; Yamashita, Yoji; Kuwabara, Masakazu
  • Applied Physics Letters, Vol. 93, Issue 24
  • DOI: 10.1063/1.3050539

CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion
journal, January 2012

  • Chowdhury, Srabanti; Wong, Man Hoi; Swenson, Brian L.
  • IEEE Electron Device Letters, Vol. 33, Issue 1
  • DOI: 10.1109/LED.2011.2173456

Electron mobility in two-dimensional electron gas in AIGaN/GaN heterostructures and in bulk GaN
journal, May 1996

  • Shur, M.; Gelmont, B.; Asif Khan, M.
  • Journal of Electronic Materials, Vol. 25, Issue 5
  • DOI: 10.1007/BF02666636

[世界に広がるマイクロファクトリの今―ミニマルマニュファクチャリング特集―ミニマルファブシステムの構想と実現に向けて]<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2011-01-01">January 2011</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Hara, Shiro; Maekawa, Hitoshi; Ikeda, Shinichi</span> </li> <li> Journal of the Japan Society for Precision Engineering, Vol. 77, Issue 3</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.2493/jjspe.77.249" class="text-muted" target="_blank" rel="noopener noreferrer">10.2493/jjspe.77.249<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1002/pssa.201001061" target="_blank" rel="noopener noreferrer" class="name">Dislocations and stacking faults in hexagonal GaN<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2011-06-15">June 2011</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Batyrev, I. G.; Sarney, W. L.; Zheleva, T. S.</span> </li> <li> physica status solidi (a), Vol. 208, Issue 7</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1002/pssa.201001061" class="text-muted" target="_blank" rel="noopener noreferrer">10.1002/pssa.201001061<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1016/S0040-6090(97)01017-1" target="_blank" rel="noopener noreferrer" class="name">Temperature effects on growth of boron nitride thin films by a hot filament assisted rf plasma chemical vapor deposition<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1998-06-01">June 1998</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Ma, Xiying; Yang, Jinman; He, Deyan</span> </li> <li> Thin Solid Films, Vol. 322, Issue 1-2</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1016/S0040-6090(97)01017-1" class="text-muted" target="_blank" rel="noopener noreferrer">10.1016/S0040-6090(97)01017-1<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.4955469" target="_blank" rel="noopener noreferrer" class="name">Comparative investigation of surface transfer doping of hydrogen terminated diamond by high electron affinity insulators<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2016-07-14">July 2016</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Verona, C.; Ciccognani, W.; Colangeli, S.</span> </li> <li> Journal of Applied Physics, Vol. 120, Issue 2</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.4955469" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.4955469<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1103/PhysRevB.50.5803" target="_blank" rel="noopener noreferrer" class="name">Negative-electron-affinity effects on the diamond (100) surface<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1994-08-01">August 1994</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> van der Weide, J.; Zhang, Z.; Baumann, P. K.</span> </li> <li> Physical Review B, Vol. 50, Issue 8</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1103/PhysRevB.50.5803" class="text-muted" target="_blank" rel="noopener noreferrer">10.1103/PhysRevB.50.5803<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.4028/www.scientific.net/MSF.645-648.1093" target="_blank" rel="noopener noreferrer" class="name">Silicon Carbide Based Energy Harvesting Module for Hostile Environments<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2010-04-01">April 2010</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Barker, Simon; Miao, Bing; Brennan, Daniel</span> </li> <li> Materials Science Forum, Vol. 645-648</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.4028/www.scientific.net/MSF.645-648.1093" class="text-muted" target="_blank" rel="noopener noreferrer">10.4028/www.scientific.net/MSF.645-648.1093<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1126/science.1183226" target="_blank" rel="noopener noreferrer" class="name">Polarization-Induced Hole Doping in Wide-Band-Gap Uniaxial Semiconductor Heterostructures<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2009-12-31">December 2009</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Simon, J.; Protasenko, V.; Lian, C.</span> </li> <li> Science, Vol. 327, Issue 5961</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1126/science.1183226" class="text-muted" target="_blank" rel="noopener noreferrer">10.1126/science.1183226<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.3254197" target="_blank" rel="noopener noreferrer" class="name">Simultaneous measurement of temperature and thermal stress in AlGaN/GaN high electron mobility transistors using Raman scattering spectroscopy<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2009-11-01">November 2009</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Batten, T.; Pomeroy, J. W.; Uren, M. J.</span> </li> <li> Journal of Applied Physics, Vol. 106, Issue 9</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.3254197" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.3254197<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/ULTSYM.2002.1193546" target="_blank" rel="noopener noreferrer" class="name">Solidly mounted bulk acoustic wave filters for the GHz frequency range<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">conference</span>, <span class="date" data-date="2002-01-01">January 2002</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Loebl, H. P.; Metzmacher, C.; Peligrad, D. N.</span> </li> <li> 2002 IEEE International Ultrasonics Symposium, 2002 IEEE Ultrasonics Symposium, 2002. Proceedings.</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/ULTSYM.2002.1193546" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/ULTSYM.2002.1193546<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/55.974795" target="_blank" rel="noopener noreferrer" class="name">Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2002-01-01">January 2002</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Kuball, M.; Hayes, J. M.; Uren, M. J.</span> </li> <li> IEEE Electron Device Letters, Vol. 23, Issue 1</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/55.974795" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/55.974795<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1364/OL.40.000875" target="_blank" rel="noopener noreferrer" class="name">Continuous wave-pumped wavelength conversion in low-loss silicon nitride waveguides<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2015-01-01">January 2015</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Krückel, Clemens J.; Torres-Company, Víctor; Andrekson, Peter A.</span> </li> <li> Optics Letters, Vol. 40, Issue 6</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1364/OL.40.000875" class="text-muted" target="_blank" rel="noopener noreferrer">10.1364/OL.40.000875<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1088/0268-1242/31/3/035023" target="_blank" rel="noopener noreferrer" class="name">Analysis of the scattering mechanisms controlling electron mobility in <em>β</em> -Ga <sub>2</sub> O <sub>3</sub> crystals<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2016-02-18">February 2016</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Parisini, Antonella; Fornari, Roberto</span> </li> <li> Semiconductor Science and Technology, Vol. 31, Issue 3</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1088/0268-1242/31/3/035023" class="text-muted" target="_blank" rel="noopener noreferrer">10.1088/0268-1242/31/3/035023<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1149/06911.0099ecst" target="_blank" rel="noopener noreferrer" class="name">(Invited) Vertical GaN p-i-n Diodes Formed by Mg Ion Implantation<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2015-09-21">September 2015</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Anderson, T. J.; Greenlee, J. D.; Feigelson, B.</span> </li> <li> ECS Transactions, Vol. 69, Issue 11</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1149/06911.0099ecst" class="text-muted" target="_blank" rel="noopener noreferrer">10.1149/06911.0099ecst<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/TED.2013.2293114" target="_blank" rel="noopener noreferrer" class="name">Impact of Water-Assisted Electrochemical Reactions on the OFF-State Degradation of AlGaN/GaN HEMTs<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2014-02-01">February 2014</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Gao, Feng; Tan, Swee Ching; del Alamo, Jesus A.</span> </li> <li> IEEE Transactions on Electron Devices, Vol. 61, Issue 2</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/TED.2013.2293114" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/TED.2013.2293114<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/JSEN.2011.2157490" target="_blank" rel="noopener noreferrer" class="name">In-Air Rangefinding With an AlN Piezoelectric Micromachined Ultrasound Transducer<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2011-11-01">November 2011</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Przybyla, Richard J.; Shelton, Stefon E.; Guedes, André</span> </li> <li> IEEE Sensors Journal, Vol. 11, Issue 11</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/JSEN.2011.2157490" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/JSEN.2011.2157490<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/LED.2014.2339197" target="_blank" rel="noopener noreferrer" class="name">1.5-kV and 2.2-m<inline-formula> <tex-math notation="TeX">\(\Omega \) </tex-math></inline-formula>-cm<inline-formula> <tex-math notation="TeX">\(^{2}\) </tex-math></inline-formula> Vertical GaN Transistors on Bulk-GaN Substrates<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2014-09-01">September 2014</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Nie, Hui; Diduck, Quentin; Alvarez, Brian</span> </li> <li> IEEE Electron Device Letters, Vol. 35, Issue 9</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/LED.2014.2339197" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/LED.2014.2339197<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.1745964" target="_blank" rel="noopener noreferrer" class="name">Cubic Form of Boron Nitride<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1957-04-01">April 1957</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Wentorf, R. H.</span> </li> <li> The Journal of Chemical Physics, Vol. 26, Issue 4</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.1745964" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.1745964<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1016/j.jcrysgro.2014.07.021" target="_blank" rel="noopener noreferrer" class="name">On the bulk β-Ga2O3 single crystals grown by the Czochralski method<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2014-10-01">October 2014</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Galazka, Zbigniew; Irmscher, Klaus; Uecker, Reinhard</span> </li> <li> Journal of Crystal Growth, Vol. 404</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1016/j.jcrysgro.2014.07.021" class="text-muted" target="_blank" rel="noopener noreferrer">10.1016/j.jcrysgro.2014.07.021<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1103/PhysRevB.74.195123" target="_blank" rel="noopener noreferrer" class="name">First-principles study of the structural, electronic, and optical properties of <math display="inline"> <mrow> <msub> <mi mathvariant="normal">Ga</mi> <mn>2</mn> </msub> <msub> <mi mathvariant="normal">O</mi> <mn>3</mn> </msub> </mrow> </math> in its monoclinic and hexagonal phases<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2006-11-01">November 2006</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> He, Haiying; Orlando, Roberto; Blanco, Miguel A.</span> </li> <li> Physical Review B, Vol. 74, Issue 19</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1103/PhysRevB.74.195123" class="text-muted" target="_blank" rel="noopener noreferrer">10.1103/PhysRevB.74.195123<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.356650" target="_blank" rel="noopener noreferrer" class="name">Electron mobilities in gallium, indium, and aluminum nitrides<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1994-06-01">June 1994</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Chin, V. W. L.; Tansley, T. L.; Osotchan, T.</span> </li> <li> Journal of Applied Physics, Vol. 75, Issue 11</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.356650" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.356650<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1002/pssa.200671127" target="_blank" rel="noopener noreferrer" class="name">Development of single-crystal CVD-diamond detectors for spectroscopy and timing<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2006-09-01">September 2006</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Pomorski, M.; Berdermann, E.; Caragheorgheopol, A.</span> </li> <li> physica status solidi (a), Vol. 203, Issue 12</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1002/pssa.200671127" class="text-muted" target="_blank" rel="noopener noreferrer">10.1002/pssa.200671127<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.1330559" target="_blank" rel="noopener noreferrer" class="name">Deep-ultraviolet transparent conductive β-Ga2O3 thin films<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2000-12-18">December 2000</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Orita, Masahiro; Ohta, Hiromichi; Hirano, Masahiro</span> </li> <li> Applied Physics Letters, Vol. 77, Issue 25</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.1330559" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.1330559<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.1900925" target="_blank" rel="noopener noreferrer" class="name">Direct observation of negative electron affinity in hydrogen-terminated diamond surfaces<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2005-04-11">April 2005</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Takeuchi, D.; Kato, H.; Ri, G. S.</span> </li> <li> Applied Physics Letters, Vol. 86, Issue 15</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.1900925" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.1900925<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1016/S0038-1101(01)00160-5" target="_blank" rel="noopener noreferrer" class="name">Electrical characteristics of thin film cubic boron nitride<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2002-02-01">February 2002</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Noor Mohammad, S.</span> </li> <li> Solid-State Electronics, Vol. 46, Issue 2</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1016/S0038-1101(01)00160-5" class="text-muted" target="_blank" rel="noopener noreferrer">10.1016/S0038-1101(01)00160-5<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.105236" target="_blank" rel="noopener noreferrer" class="name">Preparation and characterization of nanocrystalline cubic boron nitride by microwave plasma‐enhanced chemical vapor deposition<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1991-05-20">May 1991</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Saitoh, Hidetoshi; Yarbrough, Walter A.</span> </li> <li> Applied Physics Letters, Vol. 58, Issue 20</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.105236" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.105236<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1143/APEX.5.035502" target="_blank" rel="noopener noreferrer" class="name">Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2012-02-28">February 2012</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Sasaki, Kohei; Kuramata, Akito; Masui, Takekazu</span> </li> <li> Applied Physics Express, Vol. 5, Issue 3</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1143/APEX.5.035502" class="text-muted" target="_blank" rel="noopener noreferrer">10.1143/APEX.5.035502<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.3671182" target="_blank" rel="noopener noreferrer" class="name">Vertical nonpolar growth templates for light emitting diodes formed with GaN nanosheets<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2012-01-16">January 2012</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Yeh, Ting-Wei; Lin, Yen-Ting; Ahn, Byungmin</span> </li> <li> Applied Physics Letters, Vol. 100, Issue 3</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.3671182" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.3671182<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1002/pssa.201026343" target="_blank" rel="noopener noreferrer" class="name">Micro- and nano-electromechanical resonators based on SiC and group III-nitrides for sensor applications<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2010-07-21">July 2010</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Brueckner, K.; Niebelschuetz, F.; Tonisch, K.</span> </li> <li> physica status solidi (a), Vol. 208, Issue 2</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1002/pssa.201026343" class="text-muted" target="_blank" rel="noopener noreferrer">10.1002/pssa.201026343<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1088/0268-1242/28/7/074025" target="_blank" rel="noopener noreferrer" class="name">Working toward high-power GaN/InGaN heterojunction bipolar transistors<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2013-06-21">June 2013</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Shen, Shyh-Chiang; Dupuis, Russell D.; Lochner, Zachery</span> </li> <li> Semiconductor Science and Technology, Vol. 28, Issue 7</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1088/0268-1242/28/7/074025" class="text-muted" target="_blank" rel="noopener noreferrer">10.1088/0268-1242/28/7/074025<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1002/pssa.201026349" target="_blank" rel="noopener noreferrer" class="name">Solid-state lighting: ‘The case’ 10 years after and future prospects<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2010-09-27">September 2010</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Haitz, Roland; Tsao, Jeffrey Y.</span> </li> <li> physica status solidi (a), Vol. 208, Issue 1</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1002/pssa.201026349" class="text-muted" target="_blank" rel="noopener noreferrer">10.1002/pssa.201026349<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/LED.2012.2187169" target="_blank" rel="noopener noreferrer" class="name">Effect of Optical Phonon Scattering on the Performance of GaN Transistors<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2012-05-01">May 2012</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Fang, Tian; Wang, Ronghua; Xing, Huili</span> </li> <li> IEEE Electron Device Letters, Vol. 33, Issue 5</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/LED.2012.2187169" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/LED.2012.2187169<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1103/PhysRev.140.A316" target="_blank" rel="noopener noreferrer" class="name">Optical Absorption and Photoconductivity in the Band Edge of <math display="inline"> <mi>β</mi> <mo>−</mo> <mrow> <msub> <mrow> <mi mathvariant="normal">Ga</mi> </mrow> <mrow> <mn>2</mn> </mrow> </msub> </mrow> <mrow> <msub> <mrow> <mi mathvariant="normal">O</mi> </mrow> <mrow> <mn>3</mn> </mrow> </msub> </mrow> </math><span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1965-10-01">October 1965</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Tippins, H. H.</span> </li> <li> Physical Review, Vol. 140, Issue 1A</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1103/PhysRev.140.A316" class="text-muted" target="_blank" rel="noopener noreferrer">10.1103/PhysRev.140.A316<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1088/0268-1242/31/3/034001" target="_blank" rel="noopener noreferrer" class="name">Recent progress in Ga <sub>2</sub> O <sub>3</sub> power devices<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2016-01-18">January 2016</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Higashiwaki, Masataka; Sasaki, Kohei; Murakami, Hisashi</span> </li> <li> Semiconductor Science and Technology, Vol. 31, Issue 3</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1088/0268-1242/31/3/034001" class="text-muted" target="_blank" rel="noopener noreferrer">10.1088/0268-1242/31/3/034001<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1016/j.diamond.2009.01.024" target="_blank" rel="noopener noreferrer" class="name">Thermionic electron emission from low work-function phosphorus doped diamond films<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2009-05-01">May 2009</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Koeck, Franz A. M.; Nemanich, Robert J.; Lazea, Andrada</span> </li> <li> Diamond and Related Materials, Vol. 18, Issue 5-8</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1016/j.diamond.2009.01.024" class="text-muted" target="_blank" rel="noopener noreferrer">10.1016/j.diamond.2009.01.024<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1002/1521-396X(200111)188:1<117::AID-PSSA117>3.0.CO;2-X" target="_blank" rel="noopener noreferrer" class="name">High-Efficiency GaN/AlxGa1?xN Multi-Quantum-Well Light Emitter Grown on Low-Dislocation Density AlxGa1?xN<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2001-11-01">November 2001</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Iwaya, M.; Terao, S.; Sano, T.</span> </li> <li> physica status solidi (a), Vol. 188, Issue 1</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1002/1521-396X(200111)188:1<117::AID-PSSA117>3.0.CO;2-X" class="text-muted" target="_blank" rel="noopener noreferrer">10.1002/1521-396X(200111)188:1<117::AID-PSSA117>3.0.CO;2-X<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1088/0957-0233/17/12/R01" target="_blank" rel="noopener noreferrer" class="name">Energy harvesting vibration sources for microsystems applications<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2006-10-26">October 2006</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Beeby, S. P.; Tudor, M. J.; White, N. M.</span> </li> <li> Measurement Science and Technology, Vol. 17, Issue 12</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1088/0957-0233/17/12/R01" class="text-muted" target="_blank" rel="noopener noreferrer">10.1088/0957-0233/17/12/R01<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.4933181" target="_blank" rel="noopener noreferrer" class="name">Density-dependent electron transport and precise modeling of GaN high electron mobility transistors<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2015-10-12">October 2015</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Bajaj, Sanyam; Shoron, Omor F.; Park, Pil Sung</span> </li> <li> Applied Physics Letters, Vol. 107, Issue 15</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.4933181" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.4933181<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1016/j.microrel.2014.09.020" target="_blank" rel="noopener noreferrer" class="name">Implications of gate-edge electric field in AlGaN/GaN high electron mobility transistors during OFF-state degradation<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2014-12-01">December 2014</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Sun, H.; Montes Bajo, M.; Uren, M. J.</span> </li> <li> Microelectronics Reliability, Vol. 54, Issue 12</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1016/j.microrel.2014.09.020" class="text-muted" target="_blank" rel="noopener noreferrer">10.1016/j.microrel.2014.09.020<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1103/PhysRev.155.1039" target="_blank" rel="noopener noreferrer" class="name">Lattice Infrared Spectra of Boron Nitride and Boron Monophosphide<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1967-03-01">March 1967</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Gielisse, P. J.; Mitra, S. S.; Plendl, J. N.</span> </li> <li> Physical Review, Vol. 155, Issue 3</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1103/PhysRev.155.1039" class="text-muted" target="_blank" rel="noopener noreferrer">10.1103/PhysRev.155.1039<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1103/PhysRevLett.54.2045" target="_blank" rel="noopener noreferrer" class="name">Energy-Loss Rates for Hot Electrons and Holes in GaAs Quantum Wells<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1985-05-01">May 1985</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Shah, Jagdeep; Pinczuk, A.; Gossard, A. C.</span> </li> <li> Physical Review Letters, Vol. 54, Issue 18</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1103/PhysRevLett.54.2045" class="text-muted" target="_blank" rel="noopener noreferrer">10.1103/PhysRevLett.54.2045<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1149/2.0061609jss" target="_blank" rel="noopener noreferrer" class="name">Editors' Choice Communication—A (001) β-Ga <sub>2</sub> O <sub>3</sub> MOSFET with +2.9 V Threshold Voltage and HfO <sub>2</sub> Gate Dielectric<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2016-01-01">January 2016</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Tadjer, Marko J.; Mahadik, Nadeemullah A.; Wheeler, Virginia D.</span> </li> <li> ECS Journal of Solid State Science and Technology, Vol. 5, Issue 9</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1149/2.0061609jss" class="text-muted" target="_blank" rel="noopener noreferrer">10.1149/2.0061609jss<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.4927742" target="_blank" rel="noopener noreferrer" class="name">Lattice thermal conductivity in β-Ga2O3 from first principles<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2015-07-27">July 2015</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Santia, Marco D.; Tandon, Nandan; Albrecht, J. D.</span> </li> <li> Applied Physics Letters, Vol. 107, Issue 4</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.4927742" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.4927742<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1126/science.1074374" target="_blank" rel="noopener noreferrer" class="name">High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2002-09-06">September 2002</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Isberg, Jan; Hammersberg, Johan; Johansson, Erik</span> </li> <li> Science, Vol. 297, Issue 5587, p. 1670-1672</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1126/science.1074374" class="text-muted" target="_blank" rel="noopener noreferrer">10.1126/science.1074374<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1002/pssa.201300385" target="_blank" rel="noopener noreferrer" class="name">Negative electron affinity of diamond and its application to high voltage vacuum power switches: NEA of diamond and its application to a high voltage vacuum power switch<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2013-10-01">October 2013</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Takeuchi, D.; Koizumi, S.; Makino, T.</span> </li> <li> physica status solidi (a), Vol. 210, Issue 10</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1002/pssa.201300385" class="text-muted" target="_blank" rel="noopener noreferrer">10.1002/pssa.201300385<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.7567/JJAP.54.112601" target="_blank" rel="noopener noreferrer" class="name">Valence band ordering in β-Ga <sub>2</sub> O <sub>3</sub> studied by polarized transmittance and reflectance spectroscopy<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2015-10-14">October 2015</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Onuma, Takeyoshi; Saito, Shingo; Sasaki, Kohei</span> </li> <li> Japanese Journal of Applied Physics, Vol. 54, Issue 11</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.7567/JJAP.54.112601" class="text-muted" target="_blank" rel="noopener noreferrer">10.7567/JJAP.54.112601<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1016/j.microrel.2013.03.004" target="_blank" rel="noopener noreferrer" class="name">Electrical and structural dependence of operating temperature of AlGaN/GaN HEMTs<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2013-06-01">June 2013</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Heller, Eric; Choi, Sukwon; Dorsey, Donald</span> </li> <li> Microelectronics Reliability, Vol. 53, Issue 6</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1016/j.microrel.2013.03.004" class="text-muted" target="_blank" rel="noopener noreferrer">10.1016/j.microrel.2013.03.004<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.3518473" target="_blank" rel="noopener noreferrer" class="name">A low-noise, single-photon avalanche diode in standard 0.13 μm complementary metal-oxide-semiconductor process<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2010-11-22">November 2010</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Field, Ryan M.; Lary, Jenifer; Cohn, John</span> </li> <li> Applied Physics Letters, Vol. 97, Issue 21</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.3518473" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.3518473<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.4868427" target="_blank" rel="noopener noreferrer" class="name">Electro-optic and converse-piezoelectric properties of epitaxial GaN grown on silicon by metal-organic chemical vapor deposition<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2014-03-10">March 2014</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Cuniot-Ponsard, M.; Saraswati, I.; Ko, S. -M.</span> </li> <li> Applied Physics Letters, Vol. 104, Issue 10</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.4868427" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.4868427<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.3629773" target="_blank" rel="noopener noreferrer" class="name">Electromechanical properties of Al <sub>0.9</sub> Sc <sub>0.1</sub> N thin films evaluated at 2.5 GHz film bulk acoustic resonators<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2011-08-29">August 2011</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Matloub, Ramin; Artieda, Alvaro; Sandu, Cosmin</span> </li> <li> Applied Physics Letters, Vol. 99, Issue 9</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.3629773" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.3629773<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.100082" target="_blank" rel="noopener noreferrer" class="name">Ultraviolet light‐emitting diode of a cubic boron nitride <em>p</em> <em>n</em> junction made at high pressure<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1988-09-12">September 1988</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Mishima, Osamu; Era, Koh; Tanaka, Junzo</span> </li> <li> Applied Physics Letters, Vol. 53, Issue 11</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.100082" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.100082<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.125042" target="_blank" rel="noopener noreferrer" class="name">Polarization-enhanced Mg doping of AlGaN/GaN superlattices<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1999-10-18">October 1999</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Kozodoy, Peter; Smorchkova, Yulia P.; Hansen, Monica</span> </li> <li> Applied Physics Letters, Vol. 75, Issue 16</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.125042" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.125042<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.2320/matertrans.MRP2007109" target="_blank" rel="noopener noreferrer" class="name">High Thermal Conductivity of Gallium Nitride (GaN) Crystals Grown by HVPE Process<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2007-01-01">January 2007</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Shibata, Hiroyuki; Waseda, Yoshio; Ohta, Hiromichi</span> </li> <li> MATERIALS TRANSACTIONS, Vol. 48, Issue 10</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.2320/matertrans.MRP2007109" class="text-muted" target="_blank" rel="noopener noreferrer">10.2320/matertrans.MRP2007109<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.4748793" target="_blank" rel="noopener noreferrer" class="name">P-type interface charge control layers for enabling GaN/SiC separate absorption and multiplication avalanche photodiodes<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2012-08-27">August 2012</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Sampath, A. V.; Zhou, Q. G.; Enck, R. W.</span> </li> <li> Applied Physics Letters, Vol. 101, Issue 9</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.4748793" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.4748793<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1103/PhysRevB.7.743" target="_blank" rel="noopener noreferrer" class="name">Infrared Lattice Vibrations and Free-Electron Dispersion in GaN<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1973-01-01">January 1973</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Barker, A. S.; Ilegems, M.</span> </li> <li> Physical Review B, Vol. 7, Issue 2</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1103/PhysRevB.7.743" class="text-muted" target="_blank" rel="noopener noreferrer">10.1103/PhysRevB.7.743<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/ECCE.2012.6342787" target="_blank" rel="noopener noreferrer" class="name">A 6.5kV wire-bondless, double-sided cooling power electronic module<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">conference</span>, <span class="date" data-date="2012-09-01">September 2012</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Zhang, H.; Ang, S. S.; Mantooth, A.</span> </li> <li> 2012 IEEE Energy Conversion Congress and Exposition (ECCE)</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/ECCE.2012.6342787" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/ECCE.2012.6342787<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.2163709" target="_blank" rel="noopener noreferrer" class="name">Optical study of hot electron transport in GaN: Signatures of the hot-phonon effect<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2006-01-09">January 2006</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Wang, Kejia; Simon, John; Goel, Niti</span> </li> <li> Applied Physics Letters, Vol. 88, Issue 2</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.2163709" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.2163709<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.2961120" target="_blank" rel="noopener noreferrer" class="name">Isotope disorder of phonons in GaN and its beneficial effect on high power field effect transistors<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2008-07-21">July 2008</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Khurgin, Jacob B.; Jena, Debdeep; Ding, Yujie J.</span> </li> <li> Applied Physics Letters, Vol. 93, Issue 3</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.2961120" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.2961120<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1002/pssa.201431835" target="_blank" rel="noopener noreferrer" class="name">MgGa <sub>2</sub> O <sub>4</sub> as a new wide bandgap transparent semiconducting oxide: growth and properties of bulk single crystals : MgGa<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2015-01-29">January 2015</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Galazka, Zbigniew; Klimm, Detlef; Irmscher, Klaus</span> </li> <li> physica status solidi (a), Vol. 212, Issue 7</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1002/pssa.201431835" class="text-muted" target="_blank" rel="noopener noreferrer">10.1002/pssa.201431835<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1016/j.jcrysgro.2016.10.054" target="_blank" rel="noopener noreferrer" class="name">Phase degradation in BxGa1−xN films grown at low temperature by metalorganic vapor phase epitaxy<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2017-04-01">April 2017</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Gunning, Brendan P.; Moseley, Michael W.; Koleske, Daniel D.</span> </li> <li> Journal of Crystal Growth, Vol. 464</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1016/j.jcrysgro.2016.10.054" class="text-muted" target="_blank" rel="noopener noreferrer">10.1016/j.jcrysgro.2016.10.054<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/TSM.2015.2429572" target="_blank" rel="noopener noreferrer" class="name">A MOSFET Fabrication Using a Maskless Lithography System in Clean-Localized Environment of Minimal Fab<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2015-08-01">August 2015</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Khumpuang, Sommawan; Hara, Shiro</span> </li> <li> IEEE Transactions on Semiconductor Manufacturing, Vol. 28, Issue 3</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/TSM.2015.2429572" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/TSM.2015.2429572<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1021/ja00883a001" target="_blank" rel="noopener noreferrer" class="name"><strong> Turbostratic <sup>1</sup> Boron Nitride, Thermal Transformation to Ordered-layer-lattice Boron Nitride </strong><span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1962-12-01">December 1962</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Thomas, J.; Weston, N. E.; O'Connor, T. E.</span> </li> <li> Journal of the American Chemical Society, Vol. 84, Issue 24</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1021/ja00883a001" class="text-muted" target="_blank" rel="noopener noreferrer">10.1021/ja00883a001<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/ULTSYM.2002.1193557" target="_blank" rel="noopener noreferrer" class="name">High performance and miniature thin film bulk acoustic wave filters for 5 GHz<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">conference</span>, <span class="date" data-date="2002-01-01">January 2002</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Nishihara, T.; Yokoyama, T.; Miyashita, T.</span> </li> <li> 2002 IEEE International Ultrasonics Symposium, 2002 IEEE Ultrasonics Symposium, 2002. Proceedings.</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/ULTSYM.2002.1193557" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/ULTSYM.2002.1193557<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.7567/JJAP.51.090114" target="_blank" rel="noopener noreferrer" class="name">Epitaxial Growth of AlGaN/GaN High-Electron Mobility Transistor Structure on Diamond (111) Surface<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2012-09-01">September 2012</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Hirama, Kazuyuki; Taniyasu, Yoshitaka; Kasu, Makoto</span> </li> <li> Japanese Journal of Applied Physics, Vol. 51, Issue 9R</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.7567/JJAP.51.090114" class="text-muted" target="_blank" rel="noopener noreferrer">10.7567/JJAP.51.090114<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.3642962" target="_blank" rel="noopener noreferrer" class="name">Electrical properties of <em>β</em> -Ga <sub>2</sub> O <sub>3</sub> single crystals grown by the Czochralski method<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2011-09-15">September 2011</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Irmscher, K.; Galazka, Z.; Pietsch, M.</span> </li> <li> Journal of Applied Physics, Vol. 110, Issue 6</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.3642962" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.3642962<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1103/RevModPhys.79.135" target="_blank" rel="noopener noreferrer" class="name">Linear optical quantum computing with photonic qubits<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2007-01-01">January 2007</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Kok, Pieter; Munro, W. J.; Nemoto, Kae</span> </li> <li> Reviews of Modern Physics, Vol. 79, Issue 1</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1103/RevModPhys.79.135" class="text-muted" target="_blank" rel="noopener noreferrer">10.1103/RevModPhys.79.135<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/16.293319" target="_blank" rel="noopener noreferrer" class="name">SiC devices: physics and numerical simulation<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1994-06-01">June 1994</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Ruff, M.; Mitlehner, H.; Helbig, R.</span> </li> <li> IEEE Transactions on Electron Devices, Vol. 41, Issue 6</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/16.293319" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/16.293319<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1103/PhysRevLett.106.045901" target="_blank" rel="noopener noreferrer" class="name">Role of Disorder and Anharmonicity in the Thermal Conductivity of Silicon-Germanium Alloys: A First-Principles Study<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2011-01-01">January 2011</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Garg, Jivtesh; Bonini, Nicola; Kozinsky, Boris</span> </li> <li> Physical Review Letters, Vol. 106, Issue 4</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1103/PhysRevLett.106.045901" class="text-muted" target="_blank" rel="noopener noreferrer">10.1103/PhysRevLett.106.045901<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1002/pssa.201329135" target="_blank" rel="noopener noreferrer" class="name">Fabrication of 3D-silicon micro-pillars/walls decorated with aluminum-ZnO/ZnO nanowires for optoelectric devices: Fabrication of 3D-silicon micro-pillars/walls for optoelectric devices<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2013-03-18">March 2013</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Karaagac, Hakan; Logeeswaran, V. J.; Islam, M. Saif</span> </li> <li> physica status solidi (a), Vol. 210, Issue 7</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1002/pssa.201329135" class="text-muted" target="_blank" rel="noopener noreferrer">10.1002/pssa.201329135<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.1682673" target="_blank" rel="noopener noreferrer" class="name">First-principles calculations for defects and impurities: Applications to III-nitrides<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2004-04-15">April 2004</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Van de Walle, Chris G.; Neugebauer, Jörg</span> </li> <li> Journal of Applied Physics, Vol. 95, Issue 8</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.1682673" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.1682673<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1016/j.jcrysgro.2004.08.056" target="_blank" rel="noopener noreferrer" class="name">High efficiency GaN-based LEDs and lasers on SiC<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2004-12-01">December 2004</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Edmond, John; Abare, Amber; Bergman, Mike</span> </li> <li> Journal of Crystal Growth, Vol. 272, Issue 1-4</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1016/j.jcrysgro.2004.08.056" class="text-muted" target="_blank" rel="noopener noreferrer">10.1016/j.jcrysgro.2004.08.056<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1143/APEX.4.052101" target="_blank" rel="noopener noreferrer" class="name">Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2011-04-18">April 2011</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Ban, Kazuhito; Yamamoto, Jun-ichi; Takeda, Kenichiro</span> </li> <li> Applied Physics Express, Vol. 4, Issue 5</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1143/APEX.4.052101" class="text-muted" target="_blank" rel="noopener noreferrer">10.1143/APEX.4.052101<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1016/S0925-9635(98)00375-6" target="_blank" rel="noopener noreferrer" class="name">Synthesis of adhesive c-BN films in pure nitrogen radio-frequency plasma<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1999-03-01">March 1999</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Yap, Y. K.; Aoyama, T.; Kida, S.</span> </li> <li> Diamond and Related Materials, Vol. 8, Issue 2-5</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1016/S0925-9635(98)00375-6" class="text-muted" target="_blank" rel="noopener noreferrer">10.1016/S0925-9635(98)00375-6<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1038/nmat2944" target="_blank" rel="noopener noreferrer" class="name">Ultralow-voltage field-ionization discharge on whiskered silicon nanowires for gas-sensing applications<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2011-01-16">January 2011</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Banan Sadeghian, Ramin; Saif Islam, M.</span> </li> <li> Nature Materials, Vol. 10, Issue 2</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1038/nmat2944" class="text-muted" target="_blank" rel="noopener noreferrer">10.1038/nmat2944<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/LED.2016.2537198" target="_blank" rel="noopener noreferrer" class="name">High-Performance InAlN/GaN MOSHEMTs Enabled by Atomic Layer Epitaxy MgCaO as Gate Dielectric<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2016-05-01">May 2016</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Zhou, Hong; Lou, Xiabing; Conrad, Nathan J.</span> </li> <li> IEEE Electron Device Letters, Vol. 37, Issue 5</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/LED.2016.2537198" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/LED.2016.2537198<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/TED.2013.2255102" target="_blank" rel="noopener noreferrer" class="name">Thermometry of AlGaN/GaN HEMTs Using Multispectral Raman Features<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2013-06-01">June 2013</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Choi, Sukwon; Heller, Eric R.; Dorsey, Donald</span> </li> <li> IEEE Transactions on Electron Devices, Vol. 60, Issue 6</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/TED.2013.2255102" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/TED.2013.2255102<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/MODSYM.2006.365246" target="_blank" rel="noopener noreferrer" class="name">Solid State Marx Generator<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">conference</span>, <span class="date" data-date="2006-05-01">May 2006</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Glidden, Steven C.; Sanders, Howard D.</span> </li> <li> Conference Record of the 2006 Twenty-Seventh International Power Modulator Symposium</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/MODSYM.2006.365246" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/MODSYM.2006.365246<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1149/1.2134385" target="_blank" rel="noopener noreferrer" class="name">The Preparation and Properties of Aluminum Nitride Films<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1975-01-01">January 1975</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Chu, T. L.</span> </li> <li> Journal of The Electrochemical Society, Vol. 122, Issue 7</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1149/1.2134385" class="text-muted" target="_blank" rel="noopener noreferrer">10.1149/1.2134385<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1143/JJAP.33.2453" target="_blank" rel="noopener noreferrer" class="name">Temperature Dependence of Band Gap Change in InN and AlN<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1994-05-15">May 1994</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Guo, Qixin; Yoshida, Akira</span> </li> <li> Japanese Journal of Applied Physics, Vol. 33, Issue Part 1, No. 5A</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1143/JJAP.33.2453" class="text-muted" target="_blank" rel="noopener noreferrer">10.1143/JJAP.33.2453<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/TED.2008.2011931" target="_blank" rel="noopener noreferrer" class="name">Increase of Breakdown Voltage on AlGaN/GaN HEMTs by Employing Proton Implantation<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2009-03-01">March 2009</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Cho, Kyu-Heon; Choi, Young-Hwan; Lim, Jiyong</span> </li> <li> IEEE Transactions on Electron Devices, Vol. 56, Issue 3</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/TED.2008.2011931" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/TED.2008.2011931<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1103/PhysRevB.85.081109" target="_blank" rel="noopener noreferrer" class="name">Role of self-trapping in luminescence and <math display="inline"> <mi>p</mi> </math> -type conductivity of wide-band-gap oxides<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2012-02-01">February 2012</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Varley, J. B.; Janotti, A.; Franchini, C.</span> </li> <li> Physical Review B, Vol. 85, Issue 8</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1103/PhysRevB.85.081109" class="text-muted" target="_blank" rel="noopener noreferrer">10.1103/PhysRevB.85.081109<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1103/PhysRevB.23.3050" target="_blank" rel="noopener noreferrer" class="name">Hole-drift velocity in natural diamond<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1981-03-01">March 1981</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Reggiani, L.; Bosi, S.; Canali, C.</span> </li> <li> Physical Review B, Vol. 23, Issue 6</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1103/PhysRevB.23.3050" class="text-muted" target="_blank" rel="noopener noreferrer">10.1103/PhysRevB.23.3050<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1088/0268-1242/4/12/016" target="_blank" rel="noopener noreferrer" class="name">Hot phonons in high-field transport<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1989-12-01">December 1989</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Ridley, B. K.</span> </li> <li> Semiconductor Science and Technology, Vol. 4, Issue 12</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1088/0268-1242/4/12/016" class="text-muted" target="_blank" rel="noopener noreferrer">10.1088/0268-1242/4/12/016<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/16.536807" target="_blank" rel="noopener noreferrer" class="name">Wide bandgap semiconductor materials and devices<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1996-01-01">January 1996</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Yoder, M. N.</span> </li> <li> IEEE Transactions on Electron Devices, Vol. 43, Issue 10</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/16.536807" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/16.536807<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/ISSCC.2014.6757403" target="_blank" rel="noopener noreferrer" class="name">12.1 3D ultrasonic gesture recognition<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">conference</span>, <span class="date" data-date="2014-02-01">February 2014</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Przybyla, Richard J.; Tang, Hao-Yen; Shelton, Stefon E.</span> </li> <li> 2014 IEEE International Solid- State Circuits Conference (ISSCC), 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC)</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/ISSCC.2014.6757403" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/ISSCC.2014.6757403<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.2775834" target="_blank" rel="noopener noreferrer" class="name">Mechanism of surface conduction in the vicinity of Schottky gates on AlGaN∕GaN heterostructures<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2007-08-27">August 2007</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Kotani, Junji; Tajima, Masafumi; Kasai, Seiya</span> </li> <li> Applied Physics Letters, Vol. 91, Issue 9</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.2775834" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.2775834<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1049/el.2016.0331" target="_blank" rel="noopener noreferrer" class="name">Electrical characterisation of epitaxial AlN/Nb2N heterostructures grown by molecular beam epitaxy<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2016-07-07">July 2016</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Hardy, M. T.; Katzer, D. S.; Downey, B. P.</span> </li> <li> Electronics Letters, Vol. 52, Issue 14</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1049/el.2016.0331" class="text-muted" target="_blank" rel="noopener noreferrer">10.1049/el.2016.0331<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/LED.2005.860383" target="_blank" rel="noopener noreferrer" class="name">Surface leakage currents in SiN/sub x/ passivated AlGaN/GaN HFETs<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2006-01-01">January 2006</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Tan, W. S.; Uren, M. J.; Houston, P. A.</span> </li> <li> IEEE Electron Device Letters, Vol. 27, Issue 1</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/LED.2005.860383" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/LED.2005.860383<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/JPROC.2002.1021571" target="_blank" rel="noopener noreferrer" class="name">High-temperature electronics - a role for wide bandgap semiconductors?<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2002-06-01">June 2002</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Neudeck, P. G.; Okojie, R. S.</span> </li> <li> Proceedings of the IEEE, Vol. 90, Issue 6</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/JPROC.2002.1021571" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/JPROC.2002.1021571<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/ULTSYM.2009.5441602" target="_blank" rel="noopener noreferrer" class="name">CMOS-compatible AlN piezoelectric micromachined ultrasonic transducers<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">conference</span>, <span class="date" data-date="2009-09-01">September 2009</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Shelton, Stefon; Chan, Mei-Lin; Park, Hyunkyu</span> </li> <li> 2009 IEEE International Ultrasonics Symposium</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/ULTSYM.2009.5441602" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/ULTSYM.2009.5441602<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.4982920" target="_blank" rel="noopener noreferrer" class="name">Electron mobility in polarization-doped Al <sub>0-0.2</sub> GaN with a low concentration near 10 <sup>17</sup> cm <sup>−3</sup><span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2017-05-01">May 2017</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Zhu, Mingda; Qi, Meng; Nomoto, Kazuki</span> </li> <li> Applied Physics Letters, Vol. 110, Issue 18</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.4982920" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.4982920<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/JPROC.2013.2274929" target="_blank" rel="noopener noreferrer" class="name">History of Gallium–Nitride-Based Light-Emitting Diodes for Illumination<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2013-10-01">October 2013</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Nakamura, Shuji; Krames, M. R.</span> </li> <li> Proceedings of the IEEE, Vol. 101, Issue 10</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/JPROC.2013.2274929" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/JPROC.2013.2274929<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1103/PhysRevB.57.7043" target="_blank" rel="noopener noreferrer" class="name"><em>Ab initio</em> study of structural, dielectric, and dynamical properties of GaN<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1998-03-01">March 1998</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Karch, K.; Wagner, J. -M.; Bechstedt, F.</span> </li> <li> Physical Review B, Vol. 57, Issue 12</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1103/PhysRevB.57.7043" class="text-muted" target="_blank" rel="noopener noreferrer">10.1103/PhysRevB.57.7043<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1016/0925-9635(92)90197-V" target="_blank" rel="noopener noreferrer" class="name">Properties of diamond with varying isotopic composition<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1992-04-01">April 1992</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Anthony, Thomas R.; Banholzer, William F.</span> </li> <li> Diamond and Related Materials, Vol. 1, Issue 5-6</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1016/0925-9635(92)90197-V" class="text-muted" target="_blank" rel="noopener noreferrer">10.1016/0925-9635(92)90197-V<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/MWSYM.2006.249496" target="_blank" rel="noopener noreferrer" class="name">Integrated Raman - IR Thermography on AlGaN/GaN Transistors<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">conference</span>, <span class="date" data-date="2006-06-01">June 2006</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Kuball, Martin; Sarua, Andrei; Ji, Hangfeng</span> </li> <li> 2006 IEEE MTT-S International Microwave Symposium Digest</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/MWSYM.2006.249496" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/MWSYM.2006.249496<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/LED.2009.2023538" target="_blank" rel="noopener noreferrer" class="name">6.3-GHz Film Bulk Acoustic Resonator Structures Based on a Gallium Nitride/Silicon Thin Membrane<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2009-08-01">August 2009</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Muller, A.; Neculoiu, D.; Konstantinidis, G.</span> </li> <li> IEEE Electron Device Letters, Vol. 30, Issue 8</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/LED.2009.2023538" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/LED.2009.2023538<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1049/el.2013.3214" target="_blank" rel="noopener noreferrer" class="name">Activation of Mg implanted in GaN by multicycle rapid thermal annealing<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2014-01-30">January 2014</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Kub, F. J.; Eddy, C. R.; Hite, J. K.</span> </li> <li> Electronics Letters, Vol. 50, Issue 3</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1049/el.2013.3214" class="text-muted" target="_blank" rel="noopener noreferrer">10.1049/el.2013.3214<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1016/0925-9635(93)90269-8" target="_blank" rel="noopener noreferrer" class="name">Device properties of homoepitaxially grown diamond<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1993-04-01">April 1993</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Landstrass, M. I.; Plano, M. A.; Moreno, M. A.</span> </li> <li> Diamond and Related Materials, Vol. 2, Issue 5-7</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1016/0925-9635(93)90269-8" class="text-muted" target="_blank" rel="noopener noreferrer">10.1016/0925-9635(93)90269-8<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/ULTSYM.2006.103" target="_blank" rel="noopener noreferrer" class="name">4D-4 Fabrication of FBAR for GHz Band Pass Filter with AlN Film Grown Using MOCVD<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">conference</span>, <span class="date" data-date="2006-10-01">October 2006</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Aota, Y.; Sakyu, Y.; Tanifuji, S.</span> </li> <li> 2006 IEEE Ultrasonics Symposium</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/ULTSYM.2006.103" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/ULTSYM.2006.103<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1007/BF00728730" target="_blank" rel="noopener noreferrer" class="name">High-pressure synthesis of new compounds, ZnSiN2 and ZnGeN2 with distorted wurtzite structure<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1992-01-01">January 1992</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Endo, T.; Sato, Y.; Takizawa, H.</span> </li> <li> Journal of Materials Science Letters, Vol. 11, Issue 7</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1007/BF00728730" class="text-muted" target="_blank" rel="noopener noreferrer">10.1007/BF00728730<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1103/RevModPhys.71.S336" target="_blank" rel="noopener noreferrer" class="name">The invention of the transistor<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1999-03-01">March 1999</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Riordan, Michael; Hoddeson, Lillian; Herring, Conyers</span> </li> <li> Reviews of Modern Physics, Vol. 71, Issue 2</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1103/RevModPhys.71.S336" class="text-muted" target="_blank" rel="noopener noreferrer">10.1103/RevModPhys.71.S336<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.111312" target="_blank" rel="noopener noreferrer" class="name">Observation of a negative electron affinity for heteroepitaxial AlN on α(6H)‐SiC(0001)<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1994-06-13">June 1994</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Benjamin, M. C.; Wang, Cheng; Davis, R. F.</span> </li> <li> Applied Physics Letters, Vol. 64, Issue 24</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.111312" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.111312<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1016/0038-1098(79)91010-X" target="_blank" rel="noopener noreferrer" class="name">Two-dimensional electron gas at a semiconductor-semiconductor interface<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1979-03-01">March 1979</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Störmer, H. L.; Dingle, R.; Gossard, A. C.</span> </li> <li> Solid State Communications, Vol. 29, Issue 10</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1016/0038-1098(79)91010-X" class="text-muted" target="_blank" rel="noopener noreferrer">10.1016/0038-1098(79)91010-X<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/LED.2006.876325" target="_blank" rel="noopener noreferrer" class="name">Diamond FET using high-quality polycrystalline diamond with f/sub T/ of 45 GHz and f/sub max/ of 120 GHz<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2006-07-01">July 2006</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Ueda, K.; Kasu, M.; Yamauchi, Y.</span> </li> <li> IEEE Electron Device Letters, Vol. 27, Issue 7</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/LED.2006.876325" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/LED.2006.876325<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1016/j.sse.2010.11.002" target="_blank" rel="noopener noreferrer" class="name">Time-dependent thermal crosstalk in multifinger AlGaN/GaN HEMTs and implications on their electrical performance<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2011-03-01">March 2011</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Manoi, Athikom; Pomeroy, James W.; Lossy, Richard</span> </li> <li> Solid-State Electronics, Vol. 57, Issue 1</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1016/j.sse.2010.11.002" class="text-muted" target="_blank" rel="noopener noreferrer">10.1016/j.sse.2010.11.002<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/JMEMS.2009.2017110" target="_blank" rel="noopener noreferrer" class="name">Discharge-Based Pressure Sensors for High-Temperature Applications Using Three-Dimensional and Planar Microstructures<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2009-06-01">June 2009</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Wright, S. A.; Gianchandani, Y. B.</span> </li> <li> Journal of Microelectromechanical Systems, Vol. 18, Issue 3</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/JMEMS.2009.2017110" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/JMEMS.2009.2017110<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1016/0022-3697(87)90153-3" target="_blank" rel="noopener noreferrer" class="name">The intrinsic thermal conductivity of AIN<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1987-01-01">January 1987</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Slack, Glen A.; Tanzilli, R. A.; Pohl, R. O.</span> </li> <li> Journal of Physics and Chemistry of Solids, Vol. 48, Issue 7</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1016/0022-3697(87)90153-3" class="text-muted" target="_blank" rel="noopener noreferrer">10.1016/0022-3697(87)90153-3<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.3625943" target="_blank" rel="noopener noreferrer" class="name">Enhancement in emission efficiency of diamond deep-ultraviolet light emitting diode<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2011-08-08">August 2011</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Makino, Toshiharu; Yoshino, Kiyoshi; Sakai, Norihiro</span> </li> <li> Applied Physics Letters, Vol. 99, Issue 6</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.3625943" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.3625943<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1103/PhysRevLett.70.3764" target="_blank" rel="noopener noreferrer" class="name">Thermal conductivity of isotopically modified single crystal diamond<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1993-06-01">June 1993</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Wei, Lanhua; Kuo, P. K.; Thomas, R. L.</span> </li> <li> Physical Review Letters, Vol. 70, Issue 24</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1103/PhysRevLett.70.3764" class="text-muted" target="_blank" rel="noopener noreferrer">10.1103/PhysRevLett.70.3764<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1088/1367-2630/14/9/095014" target="_blank" rel="noopener noreferrer" class="name">Aluminum nitride as a new material for chip-scale optomechanics and nonlinear optics<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2012-09-01">September 2012</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Xiong, Chi; Pernice, Wolfram H. P.; Sun, Xiankai</span> </li> <li> New Journal of Physics, Vol. 14, Issue 9</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1088/1367-2630/14/9/095014" class="text-muted" target="_blank" rel="noopener noreferrer">10.1088/1367-2630/14/9/095014<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/JESTPE.2014.2313511" target="_blank" rel="noopener noreferrer" class="name">Wide Bandgap Technologies and Their Implications on Miniaturizing Power Electronic Systems<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2014-09-01">September 2014</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Mantooth, H. Alan; Glover, Michael D.; Shepherd, Paul</span> </li> <li> IEEE Journal of Emerging and Selected Topics in Power Electronics, Vol. 2, Issue 3</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/JESTPE.2014.2313511" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/JESTPE.2014.2313511<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1103/PhysRevLett.90.247401" target="_blank" rel="noopener noreferrer" class="name">Measurement of the Frequency-Dependent Conductivity in Sapphire<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2003-06-01">June 2003</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Shan, Jie; Wang, Feng; Knoesel, Ernst</span> </li> <li> Physical Review Letters, Vol. 90, Issue 24</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1103/PhysRevLett.90.247401" class="text-muted" target="_blank" rel="noopener noreferrer">10.1103/PhysRevLett.90.247401<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1016/j.jcrysgro.2004.06.027" target="_blank" rel="noopener noreferrer" class="name">Large-size β-Ga2O3 single crystals and wafers<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2004-10-01">October 2004</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Víllora, Encarnación G.; Shimamura, Kiyoshi; Yoshikawa, Yukio</span> </li> <li> Journal of Crystal Growth, Vol. 270, Issue 3-4</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1016/j.jcrysgro.2004.06.027" class="text-muted" target="_blank" rel="noopener noreferrer">10.1016/j.jcrysgro.2004.06.027<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.331646" target="_blank" rel="noopener noreferrer" class="name">Semiconductors for high‐voltage, vertical channel field‐effect transistors<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1982-03-01">March 1982</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Baliga, B. J.</span> </li> <li> Journal of Applied Physics, Vol. 53, Issue 3, p. 1759-1764</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.331646" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.331646<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.350844" target="_blank" rel="noopener noreferrer" class="name">Electro‐optical effect in aluminum nitride waveguides<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1992-05-01">May 1992</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Gräupner, P.; Pommier, J. C.; Cachard, A.</span> </li> <li> Journal of Applied Physics, Vol. 71, Issue 9</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.350844" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.350844<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1002/pssa.201600119" target="_blank" rel="noopener noreferrer" class="name">Multiple role of dislocations in the heteroepitaxial growth of diamond: A brief review: Multiple role of dislocations in the heteroepitaxial growth of diamond<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2016-04-23">April 2016</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Schreck, Matthias; Mayr, Michael; Klein, Oliver</span> </li> <li> physica status solidi (a), Vol. 213, Issue 8</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1002/pssa.201600119" class="text-muted" target="_blank" rel="noopener noreferrer">10.1002/pssa.201600119<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1038/nphoton.2013.13" target="_blank" rel="noopener noreferrer" class="name">Detecting single infrared photons with 93% system efficiency<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2013-02-24">February 2013</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Marsili, F.; Verma, V. B.; Stern, J. A.</span> </li> <li> Nature Photonics, Vol. 7, Issue 3</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1038/nphoton.2013.13" class="text-muted" target="_blank" rel="noopener noreferrer">10.1038/nphoton.2013.13<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1016/j.microrel.2010.08.014" target="_blank" rel="noopener noreferrer" class="name">AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2011-02-01">February 2011</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Kuball, Martin; Ťapajna, Milan; Simms, Richard J. T.</span> </li> <li> Microelectronics Reliability, Vol. 51, Issue 2</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1016/j.microrel.2010.08.014" class="text-muted" target="_blank" rel="noopener noreferrer">10.1016/j.microrel.2010.08.014<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1103/PhysRevB.12.2361" target="_blank" rel="noopener noreferrer" class="name">High-field transport in wide-band-gap semiconductors<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1975-09-01">September 1975</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Ferry, D. K.</span> </li> <li> Physical Review B, Vol. 12, Issue 6</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1103/PhysRevB.12.2361" class="text-muted" target="_blank" rel="noopener noreferrer">10.1103/PhysRevB.12.2361<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/TED.2014.2360861" target="_blank" rel="noopener noreferrer" class="name">Vertical Power p-n Diodes Based on Bulk GaN<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2015-02-01">February 2015</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Kizilyalli, Isik C.; Edwards, Andrew P.; Aktas, Ozgur</span> </li> <li> IEEE Transactions on Electron Devices, Vol. 62, Issue 2</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/TED.2014.2360861" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/TED.2014.2360861<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.1862780" target="_blank" rel="noopener noreferrer" class="name">Internal photoemission in solar blind AlGaN Schottky barrier photodiodes<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2005-02-07">February 2005</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Duboz, Jean-Yves; Grandjean, Nicolas; Omnes, Franck</span> </li> <li> Applied Physics Letters, Vol. 86, Issue 6</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.1862780" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.1862780<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1103/PhysRevB.67.113313" target="_blank" rel="noopener noreferrer" class="name">Electron mobilities, Hall factors, and scattering processes of <em>n</em> -type GaN epilayers studied by infrared reflection and Hall measurements<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2003-03-01">March 2003</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Fu, Y.; Willander, M.; Li, Z. -F.</span> </li> <li> Physical Review B, Vol. 67, Issue 11</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1103/PhysRevB.67.113313" class="text-muted" target="_blank" rel="noopener noreferrer">10.1103/PhysRevB.67.113313<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.1868876" target="_blank" rel="noopener noreferrer" class="name">Thermal conduction in AlxGa1−xN alloys and thin films<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2005-04-01">April 2005</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Liu, Weili; Balandin, Alexander A.</span> </li> <li> Journal of Applied Physics, Vol. 97, Issue 7</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.1868876" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.1868876<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1016/S0038-1101(98)00210-X" target="_blank" rel="noopener noreferrer" class="name">A review of junction field effect transistors for high-temperature and high-power electronics<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1998-12-01">December 1998</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Zolper, J. C.</span> </li> <li> Solid-State Electronics, Vol. 42, Issue 12</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1016/S0038-1101(98)00210-X" class="text-muted" target="_blank" rel="noopener noreferrer">10.1016/S0038-1101(98)00210-X<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1007/s12274-014-0462-7" target="_blank" rel="noopener noreferrer" class="name">High-precision transfer-printing and integration of vertically oriented semiconductor arrays for flexible device fabrication<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2014-06-04">June 2014</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Triplett, Mark; Nishimura, Hideki; Ombaba, Matthew</span> </li> <li> Nano Research, Vol. 7, Issue 7</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1007/s12274-014-0462-7" class="text-muted" target="_blank" rel="noopener noreferrer">10.1007/s12274-014-0462-7<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.4962010" target="_blank" rel="noopener noreferrer" class="name">Size dictated thermal conductivity of GaN<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2016-09-02">September 2016</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Beechem, Thomas E.; McDonald, Anthony E.; Fuller, Elliot J.</span> </li> <li> Journal of Applied Physics, Vol. 120, Issue 9</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.4962010" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.4962010<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.7567/APEX.7.031001" target="_blank" rel="noopener noreferrer" class="name">Band alignments and polarization properties of BN polymorphs<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2014-02-07">February 2014</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Dreyer, Cyrus E.; Lyons, John L.; Janotti, Anderson</span> </li> <li> Applied Physics Express, Vol. 7, Issue 3</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.7567/APEX.7.031001" class="text-muted" target="_blank" rel="noopener noreferrer">10.7567/APEX.7.031001<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1179/174328005X67160" target="_blank" rel="noopener noreferrer" class="name">Review of synthesis and properties of cubic boron nitride (c-BN) thin films<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2005-12-01">December 2005</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Samantaray, C. B.; Singh, R. N.</span> </li> <li> International Materials Reviews, Vol. 50, Issue 6</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1179/174328005X67160" class="text-muted" target="_blank" rel="noopener noreferrer">10.1179/174328005X67160<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1116/1.4922340" target="_blank" rel="noopener noreferrer" class="name"><em>β</em> -(Al <sub>x</sub> Ga <sub>1−x</sub> ) <sub>2</sub> O <sub>3</sub> /Ga <sub>2</sub> O <sub>3</sub> (010) heterostructures grown on <em>β</em> -Ga <sub>2</sub> O <sub>3</sub> (010) substrates by plasma-assisted molecular beam epitaxy<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2015-07-01">July 2015</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Kaun, Stephen W.; Wu, Feng; Speck, James S.</span> </li> <li> Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 33, Issue 4</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1116/1.4922340" class="text-muted" target="_blank" rel="noopener noreferrer">10.1116/1.4922340<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.363486" target="_blank" rel="noopener noreferrer" class="name">Empirical tight‐binding calculation of the branch‐point energy of the continuum of interface‐induced gap states<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1996-11-01">November 1996</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Mönch, Winfried</span> </li> <li> Journal of Applied Physics, Vol. 80, Issue 9</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.363486" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.363486<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.2952027" target="_blank" rel="noopener noreferrer" class="name">Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2008-07-01">July 2008</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Mita, S.; Collazo, R.; Rice, A.</span> </li> <li> Journal of Applied Physics, Vol. 104, Issue 1</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.2952027" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.2952027<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/LED.2015.2394503" target="_blank" rel="noopener noreferrer" class="name">Recess-Free Nonalloyed Ohmic Contacts on Graded AlGaN Heterojunction FETs<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2015-03-01">March 2015</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Park, Pil Sung; Krishnamoorthy, Sriram; Bajaj, Sanyam</span> </li> <li> IEEE Electron Device Letters, Vol. 36, Issue 3</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/LED.2015.2394503" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/LED.2015.2394503<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.4962017" target="_blank" rel="noopener noreferrer" class="name">Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2016-09-08">September 2016</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Kaess, Felix; Mita, Seiji; Xie, Jingqiao</span> </li> <li> Journal of Applied Physics, Vol. 120, Issue 10</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.4962017" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.4962017<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.1631059" target="_blank" rel="noopener noreferrer" class="name">High-quality heterojunction between <em>p</em> -type diamond single-crystal film and <em>n</em> -type cubic boron nitride bulk single crystal<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2003-12-08">December 2003</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Wang, Cheng-Xin; Yang, Guo-Wei; Zhang, Tie-Chen</span> </li> <li> Applied Physics Letters, Vol. 83, Issue 23</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.1631059" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.1631059<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.109775" target="_blank" rel="noopener noreferrer" class="name">High electron mobility transistor based on a GaN‐Al<sub><i>x</i></sub>Ga <sub>1−<i>x</i></sub>N heterojunction<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1993-08-30">August 1993</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Asif Khan, M.; Bhattarai, A.; Kuznia, J. N.</span> </li> <li> Applied Physics Letters, Vol. 63, Issue 9, p. 1214-1215</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.109775" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.109775<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1016/j.jmmm.2004.11.433" target="_blank" rel="noopener noreferrer" class="name">Microfabricated coupled inductors for integrated power converters<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2005-04-01">April 2005</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Prabhakaran, Satish; O’Donnell, Terence; Sullivan, Charles R.</span> </li> <li> Journal of Magnetism and Magnetic Materials, Vol. 290-291</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1016/j.jmmm.2004.11.433" class="text-muted" target="_blank" rel="noopener noreferrer">10.1016/j.jmmm.2004.11.433<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/TNS.2015.2499160" target="_blank" rel="noopener noreferrer" class="name">Effects of Proton-Induced Displacement Damage on Gallium Nitride HEMTs in RF Power Amplifier Applications<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2015-12-01">December 2015</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Ives, Nathan E.; Chen, Jin; Witulski, Arthur F.</span> </li> <li> IEEE Transactions on Nuclear Science, Vol. 62, Issue 6</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/TNS.2015.2499160" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/TNS.2015.2499160<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/JMEMS.2014.2352617" target="_blank" rel="noopener noreferrer" class="name">Gallium Nitride as an Electromechanical Material<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2014-12-01">December 2014</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Rais-Zadeh, Mina; Gokhale, Vikrant Jayant; Ansari, Azadeh</span> </li> <li> Journal of Microelectromechanical Systems, Vol. 23, Issue 6</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/JMEMS.2014.2352617" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/JMEMS.2014.2352617<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1002/adfm.201303308" target="_blank" rel="noopener noreferrer" class="name">Enhanced Field Ionization Enabled by Metal Induced Surface States on Semiconductor Nanotips<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2013-12-05">December 2013</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Karaagac, H.; Islam, M. Saif</span> </li> <li> Advanced Functional Materials, Vol. 24, Issue 15</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1002/adfm.201303308" class="text-muted" target="_blank" rel="noopener noreferrer">10.1002/adfm.201303308<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.4719967" target="_blank" rel="noopener noreferrer" class="name">A numerical study of carrier impact ionization in Al <sub> <em>x</em> </sub> Ga <sub>1−</sub> <sub> <em>x</em> </sub> N<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2012-05-15">May 2012</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Bellotti, Enrico; Bertazzi, Francesco</span> </li> <li> Journal of Applied Physics, Vol. 111, Issue 10</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.4719967" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.4719967<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1016/j.diamond.2012.05.004" target="_blank" rel="noopener noreferrer" class="name">Diamond bipolar junction transistor device with phosphorus-doped diamond base layer<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2012-07-01">July 2012</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Kato, Hiromitsu; Oyama, Kazuhiro; Makino, Toshiharu</span> </li> <li> Diamond and Related Materials, Vol. 27-28</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1016/j.diamond.2012.05.004" class="text-muted" target="_blank" rel="noopener noreferrer">10.1016/j.diamond.2012.05.004<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.7567/JJAP.55.1202A2" target="_blank" rel="noopener noreferrer" class="name">High-quality β-Ga <sub>2</sub> O <sub>3</sub> single crystals grown by edge-defined film-fed growth<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2016-11-15">November 2016</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Kuramata, Akito; Koshi, Kimiyoshi; Watanabe, Shinya</span> </li> <li> Japanese Journal of Applied Physics, Vol. 55, Issue 12</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.7567/JJAP.55.1202A2" class="text-muted" target="_blank" rel="noopener noreferrer">10.7567/JJAP.55.1202A2<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1016/j.diamond.2003.11.072" target="_blank" rel="noopener noreferrer" class="name">Growth of cubic boron nitride films on Si by ion beam assisted deposition at the high temperatures<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2004-03-01">March 2004</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Deyneka, N.; Zhang, X. W.; Boyen, H. -G</span> </li> <li> Diamond and Related Materials, Vol. 13, Issue 3</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1016/j.diamond.2003.11.072" class="text-muted" target="_blank" rel="noopener noreferrer">10.1016/j.diamond.2003.11.072<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1016/j.jcrysgro.2015.12.022" target="_blank" rel="noopener noreferrer" class="name">Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2016-03-01">March 2016</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Bryan, Isaac; Bryan, Zachary; Mita, Seiji</span> </li> <li> Journal of Crystal Growth, Vol. 438</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1016/j.jcrysgro.2015.12.022" class="text-muted" target="_blank" rel="noopener noreferrer">10.1016/j.jcrysgro.2015.12.022<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1016/S0038-1101(01)00088-0" target="_blank" rel="noopener noreferrer" class="name">Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2001-05-01">May 2001</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Huang, D.; Yun, F.; Reshchikov, M. A.</span> </li> <li> Solid-State Electronics, Vol. 45, Issue 5</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1016/S0038-1101(01)00088-0" class="text-muted" target="_blank" rel="noopener noreferrer">10.1016/S0038-1101(01)00088-0<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/APMC.2006.4429749" target="_blank" rel="noopener noreferrer" class="name">Micromachined GaN-based FBAR structures for microwave applications<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">conference</span>, <span class="date" data-date="2006-12-01">December 2006</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Kabula Mutamba, ; Neculoiu, Dan; Muller, Alexandru</span> </li> <li> 2006 Asia-Pacific Microwave Conference</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/APMC.2006.4429749" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/APMC.2006.4429749<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1016/S0022-0248(00)00851-4" target="_blank" rel="noopener noreferrer" class="name">Czochralski grown Ga2O3 crystals<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2000-12-01">December 2000</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Tomm, Y.; Reiche, P.; Klimm, D.</span> </li> <li> Journal of Crystal Growth, Vol. 220, Issue 4</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1016/S0022-0248(00)00851-4" class="text-muted" target="_blank" rel="noopener noreferrer">10.1016/S0022-0248(00)00851-4<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.3499306" target="_blank" rel="noopener noreferrer" class="name">Oxygen vacancies and donor impurities in β-Ga2O3<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2010-10-04">October 2010</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Varley, J. B.; Weber, J. R.; Janotti, A.</span> </li> <li> Applied Physics Letters, Vol. 97, Issue 14</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.3499306" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.3499306<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.2824872" target="_blank" rel="noopener noreferrer" class="name">Hot phonon effect on electron velocity saturation in GaN: A second look<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2007-12-17">December 2007</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Khurgin, Jacob; Ding, Yujie J.; Jena, Debdeep</span> </li> <li> Applied Physics Letters, Vol. 91, Issue 25</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.2824872" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.2824872<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1002/pssc.201000964" target="_blank" rel="noopener noreferrer" class="name">Progress on n-type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2011-05-09">May 2011</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Collazo, Ramón; Mita, Seiji; Xie, Jinqiao</span> </li> <li> physica status solidi (c), Vol. 8, Issue 7-8</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1002/pssc.201000964" class="text-muted" target="_blank" rel="noopener noreferrer">10.1002/pssc.201000964<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1016/j.jcrysgro.2016.04.022" target="_blank" rel="noopener noreferrer" class="name">Growth of β-Ga 2 O 3 single crystals using vertical Bridgman method in ambient air<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2016-08-01">August 2016</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Hoshikawa, K.; Ohba, E.; Kobayashi, T.</span> </li> <li> Journal of Crystal Growth, Vol. 447</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1016/j.jcrysgro.2016.04.022" class="text-muted" target="_blank" rel="noopener noreferrer">10.1016/j.jcrysgro.2016.04.022<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1016/j.physrep.2013.02.001" target="_blank" rel="noopener noreferrer" class="name">The nitrogen-vacancy colour centre in diamond<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2013-07-01">July 2013</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Doherty, Marcus W.; Manson, Neil B.; Delaney, Paul</span> </li> <li> Physics Reports, Vol. 528, Issue 1</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1016/j.physrep.2013.02.001" class="text-muted" target="_blank" rel="noopener noreferrer">10.1016/j.physrep.2013.02.001<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1103/PhysRevB.89.081305" target="_blank" rel="noopener noreferrer" class="name">Absolute surface energies of polar and nonpolar planes of GaN<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2014-02-01">February 2014</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Dreyer, C. E.; Janotti, A.; Van de Walle, C. G.</span> </li> <li> Physical Review B, Vol. 89, Issue 8</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1103/PhysRevB.89.081305" class="text-muted" target="_blank" rel="noopener noreferrer">10.1103/PhysRevB.89.081305<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.4922748" target="_blank" rel="noopener noreferrer" class="name">Silicon carbide: A unique platform for metal-oxide-semiconductor physics<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2015-06-01">June 2015</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Liu, Gang; Tuttle, Blair R.; Dhar, Sarit</span> </li> <li> Applied Physics Reviews, Vol. 2, Issue 2</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.4922748" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.4922748<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1038/srep20803" target="_blank" rel="noopener noreferrer" class="name">Design of defect spins in piezoelectric aluminum nitride for solid-state hybrid quantum technologies<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2016-02-01">February 2016</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Seo, Hosung; Govoni, Marco; Galli, Giulia</span> </li> <li> Scientific Reports, Vol. 6, Issue 1</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1038/srep20803" class="text-muted" target="_blank" rel="noopener noreferrer">10.1038/srep20803<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1115/1.4024359" target="_blank" rel="noopener noreferrer" class="name">A Comparative Study of Thermal Metrology Techniques for Ultraviolet Light Emitting Diodes<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2013-07-26">July 2013</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Natarajan, Shweta; Habtemichael, Yishak; Graham, Samuel</span> </li> <li> Journal of Heat Transfer, Vol. 135, Issue 9</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1115/1.4024359" class="text-muted" target="_blank" rel="noopener noreferrer">10.1115/1.4024359<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.114595" target="_blank" rel="noopener noreferrer" class="name">Study of band offsets in CdF <sub>2</sub> /CaF <sub>2</sub> /Si(111) heterostructures using x‐ray photoelectron spectroscopy<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1995-11-06">November 1995</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Izumi, A.; Hirai, Y.; Tsutsui, K.</span> </li> <li> Applied Physics Letters, Vol. 67, Issue 19</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.114595" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.114595<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.4867529" target="_blank" rel="noopener noreferrer" class="name">Aluminum nitride nanophotonic circuits operating at ultraviolet wavelengths<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2014-03-03">March 2014</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Stegmaier, M.; Ebert, J.; Meckbach, J. M.</span> </li> <li> Applied Physics Letters, Vol. 104, Issue 9</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.4867529" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.4867529<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.4937436" target="_blank" rel="noopener noreferrer" class="name">Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN <em>p-n</em> diodes with avalanche breakdown<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2015-12-14">December 2015</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Hu, Zongyang; Nomoto, Kazuki; Song, Bo</span> </li> <li> Applied Physics Letters, Vol. 107, Issue 24</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.4937436" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.4937436<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1038/nnano.2015.242" target="_blank" rel="noopener noreferrer" class="name">Quantum emission from hexagonal boron nitride monolayers<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2015-10-26">October 2015</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Tran, Toan Trong; Bray, Kerem; Ford, Michael J.</span> </li> <li> Nature Nanotechnology, Vol. 11, Issue 1</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1038/nnano.2015.242" class="text-muted" target="_blank" rel="noopener noreferrer">10.1038/nnano.2015.242<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/TPEL.2003.810840" target="_blank" rel="noopener noreferrer" class="name">An assessment of wide bandgap semiconductors for power devices<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2003-05-01">May 2003</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Hudgins, J. L.; Simin, G. S.; Santi, E.</span> </li> <li> IEEE Transactions on Power Electronics, Vol. 18, Issue 3</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/TPEL.2003.810840" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/TPEL.2003.810840<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/LED.2016.2535133" target="_blank" rel="noopener noreferrer" class="name">Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2016-04-01">April 2016</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Tapajna, M.; Hilt, O.; Bahat-Treidel, E.</span> </li> <li> IEEE Electron Device Letters, Vol. 37, Issue 4</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/LED.2016.2535133" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/LED.2016.2535133<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/55.119164" target="_blank" rel="noopener noreferrer" class="name">Diamond cold cathode<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1991-08-01">August 1991</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Geis, M. W.; Efremow, N. N.; Woodhouse, J. D.</span> </li> <li> IEEE Electron Device Letters, Vol. 12, Issue 8</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/55.119164" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/55.119164<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.1508420" target="_blank" rel="noopener noreferrer" class="name">Energy band bowing parameter in AlxGa1−xN alloys<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2002-10-15">October 2002</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Yun, Feng; Reshchikov, Michael A.; He, Lei</span> </li> <li> Journal of Applied Physics, Vol. 92, Issue 8</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.1508420" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.1508420<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.7567/APEX.8.031101" target="_blank" rel="noopener noreferrer" class="name">High-mobility β-Ga <sub>2</sub> O <sub>3</sub> ($\bar{2}01$) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2015-02-12">February 2015</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Oishi, Toshiyuki; Koga, Yuta; Harada, Kazuya</span> </li> <li> Applied Physics Express, Vol. 8, Issue 3</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.7567/APEX.8.031101" class="text-muted" target="_blank" rel="noopener noreferrer">10.7567/APEX.8.031101<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1016/0925-9635(94)00263-0" target="_blank" rel="noopener noreferrer" class="name">Electrical characterization of homoepitaxial diamond films doped with B, P, Li and Na during crystal growth<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1995-05-01">May 1995</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Borst, T. H.; Weis, O.</span> </li> <li> Diamond and Related Materials, Vol. 4, Issue 7</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1016/0925-9635(94)00263-0" class="text-muted" target="_blank" rel="noopener noreferrer">10.1016/0925-9635(94)00263-0<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.4793483" target="_blank" rel="noopener noreferrer" class="name">Interface charge engineering at atomic layer deposited dielectric/III-nitride interfaces<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2013-02-18">February 2013</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Hung, Ting-Hsiang; Krishnamoorthy, Sriram; Esposto, Michele</span> </li> <li> Applied Physics Letters, Vol. 102, Issue 7</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.4793483" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.4793483<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1103/PhysRevLett.111.025901" target="_blank" rel="noopener noreferrer" class="name">First-Principles Determination of Ultrahigh Thermal Conductivity of Boron Arsenide: A Competitor for Diamond?<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2013-07-01">July 2013</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Lindsay, L.; Broido, D. A.; Reinecke, T. L.</span> </li> <li> Physical Review Letters, Vol. 111, Issue 2, Article No. 025901</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1103/PhysRevLett.111.025901" class="text-muted" target="_blank" rel="noopener noreferrer">10.1103/PhysRevLett.111.025901<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/JQE.1987.1073450" target="_blank" rel="noopener noreferrer" class="name">An introduction to the development of the semiconductor laser<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1987-06-01">June 1987</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Dupuis, R.</span> </li> <li> IEEE Journal of Quantum Electronics, Vol. 23, Issue 6</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/JQE.1987.1073450" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/JQE.1987.1073450<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1088/0268-1242/28/7/074012" target="_blank" rel="noopener noreferrer" class="name">Prospects for the application of GaN power devices in hybrid electric vehicle drive systems<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2013-06-21">June 2013</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Su, Ming; Chen, Chingchi; Rajan, Siddharth</span> </li> <li> Semiconductor Science and Technology, Vol. 28, Issue 7</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1088/0268-1242/28/7/074012" class="text-muted" target="_blank" rel="noopener noreferrer">10.1088/0268-1242/28/7/074012<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.4862064" target="_blank" rel="noopener noreferrer" class="name">Tunnel-injection quantum dot deep-ultraviolet light-emitting diodes with polarization-induced doping in III-nitride heterostructures<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2014-01-13">January 2014</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Verma, Jai; Islam, S. M.; Protasenko, Vladimir</span> </li> <li> Applied Physics Letters, Vol. 104, Issue 2</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.4862064" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.4862064<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/LED.2013.2266123" target="_blank" rel="noopener noreferrer" class="name">Power Performance at 40 GHz on Quaternary Barrier InAlGaN/GaN HEMT<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2013-08-01">August 2013</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Lecourt, Francois; Agboton, Alain; Ketteniss, Nico</span> </li> <li> IEEE Electron Device Letters, Vol. 34, Issue 8</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/LED.2013.2266123" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/LED.2013.2266123<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1016/j.tsf.2013.07.001" target="_blank" rel="noopener noreferrer" class="name">Doping and electrical properties of cubic boron nitride thin films: A critical review<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2013-10-01">October 2013</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Zhang, X. W.</span> </li> <li> Thin Solid Films, Vol. 544</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1016/j.tsf.2013.07.001" class="text-muted" target="_blank" rel="noopener noreferrer">10.1016/j.tsf.2013.07.001<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1109/TED.2015.2463713" target="_blank" rel="noopener noreferrer" class="name">Demonstration of Field- and Power-Dependent ESD Failure in AlGaN/GaN RF HEMTs<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2015-09-01">September 2015</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Rossetto, Isabella; Meneghini, Matteo; Barbato, Marco</span> </li> <li> IEEE Transactions on Electron Devices, Vol. 62, Issue 9</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1109/TED.2015.2463713" class="text-muted" target="_blank" rel="noopener noreferrer">10.1109/TED.2015.2463713<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1016/j.vacuum.2011.03.026" target="_blank" rel="noopener noreferrer" class="name">Aluminum scandium nitride thin-film bulk acoustic resonators for wide band applications<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2011-07-01">July 2011</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Moreira, Milena; Bjurström, Johan; Katardjev, Ilia</span> </li> <li> Vacuum, Vol. 86, Issue 1</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1016/j.vacuum.2011.03.026" class="text-muted" target="_blank" rel="noopener noreferrer">10.1016/j.vacuum.2011.03.026<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.4916078" target="_blank" rel="noopener noreferrer" class="name">Anisotropic thermal conductivity in single crystal β-gallium oxide<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2015-03-16">March 2015</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Guo, Zhi; Verma, Amit; Wu, Xufei</span> </li> <li> Applied Physics Letters, Vol. 106, Issue 11</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.4916078" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.4916078<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1088/1367-2630/18/1/013028" target="_blank" rel="noopener noreferrer" class="name">Direct calculation of modal contributions to thermal conductivity via Green–Kubo modal analysis<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2016-01-01">January 2016</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Lv, Wei; Henry, Asegun</span> </li> <li> New Journal of Physics, Vol. 18, Issue 1</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1088/1367-2630/18/1/013028" class="text-muted" target="_blank" rel="noopener noreferrer">10.1088/1367-2630/18/1/013028<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.115315" target="_blank" rel="noopener noreferrer" class="name">Observation of a negative electron affinity for boron nitride<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1995-12-25">December 1995</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Powers, M. J.; Benjamin, M. C.; Porter, L. M.</span> </li> <li> Applied Physics Letters, Vol. 67, Issue 26</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.115315" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.115315<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.2213170" target="_blank" rel="noopener noreferrer" class="name">Band offsets of high K gate oxides on III-V semiconductors<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2006-07-01">July 2006</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Robertson, J.; Falabretti, B.</span> </li> <li> Journal of Applied Physics, Vol. 100, Issue 1</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.2213170" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.2213170<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1049/el.2013.2846" target="_blank" rel="noopener noreferrer" class="name">AlN/AlGaN HEMTs on AlN substrate for stable high-temperature operation<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2014-01-30">January 2014</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Yafune, N.; Akita, K.; Hashimoto, S.</span> </li> <li> Electronics Letters, Vol. 50, Issue 3</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1049/el.2013.2846" class="text-muted" target="_blank" rel="noopener noreferrer">10.1049/el.2013.2846<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.119233" target="_blank" rel="noopener noreferrer" class="name">Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1997-06-30">June 1997</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Ueda, Naoyuki; Hosono, Hideo; Waseda, Ryuta</span> </li> <li> Applied Physics Letters, Vol. 70, Issue 26</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.119233" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.119233<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1103/PhysRevB.93.161201" target="_blank" rel="noopener noreferrer" class="name">Defects in AlN as candidates for solid-state qubits<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2016-04-01">April 2016</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Varley, J. B.; Janotti, A.; Van de Walle, C. G.</span> </li> <li> Physical Review B, Vol. 93, Issue 16</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1103/PhysRevB.93.161201" class="text-muted" target="_blank" rel="noopener noreferrer">10.1103/PhysRevB.93.161201<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1063/1.2991287" target="_blank" rel="noopener noreferrer" class="name">p-type Fermi level pinning at a Si:Al2O3 model interface<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2008-09-22">September 2008</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Fonseca, L. R. C.; Liu, D.; Robertson, J.</span> </li> <li> Applied Physics Letters, Vol. 93, Issue 12</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1063/1.2991287" class="text-muted" target="_blank" rel="noopener noreferrer">10.1063/1.2991287<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1088/0953-8984/28/22/224001" target="_blank" rel="noopener noreferrer" class="name">Properties of (Ga <sub> 1− <em>x</em> </sub> In <sub> <em>x</em> </sub> ) <sub>2</sub> O <sub>3</sub> over the whole <em>x</em> range<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2016-03-08">March 2016</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Maccioni, M. B.; Ricci, F.; Fiorentini, V.</span> </li> <li> Journal of Physics: Condensed Matter, Vol. 28, Issue 22</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1088/0953-8984/28/22/224001" class="text-muted" target="_blank" rel="noopener noreferrer">10.1088/0953-8984/28/22/224001<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1016/j.diamond.2009.09.002" target="_blank" rel="noopener noreferrer" class="name">Thermionic electron emission from nitrogen-doped homoepitaxial diamond<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2010-02-01">February 2010</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Kataoka, Mitsuhiro; Zhu, Chiyu; Koeck, Franz A. M.</span> </li> <li> Diamond and Related Materials, Vol. 19, Issue 2-3</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1016/j.diamond.2009.09.002" class="text-muted" target="_blank" rel="noopener noreferrer">10.1016/j.diamond.2009.09.002<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1103/PhysRevB.20.624" target="_blank" rel="noopener noreferrer" class="name">Quantum photoyield of diamond(111)—A stable negative-affinity emitter<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="1979-07-01">July 1979</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Himpsel, F. J.; Knapp, J. A.; VanVechten, J. A.</span> </li> <li> Physical Review B, Vol. 20, Issue 2</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1103/PhysRevB.20.624" class="text-muted" target="_blank" rel="noopener noreferrer">10.1103/PhysRevB.20.624<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1364/OME.1.000078" target="_blank" rel="noopener noreferrer" class="name">Near-infrared photoluminescence properties of neodymium in in situ doped AlN grown using plasma-assisted molecular beam epitaxy<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2011-01-01">January 2011</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Metcalfe, Grace D.; Readinger, Eric D.; Enck, Ryan</span> </li> <li> Optical Materials Express, Vol. 1, Issue 1</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1364/OME.1.000078" class="text-muted" target="_blank" rel="noopener noreferrer">10.1364/OME.1.000078<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1016/j.microrel.2011.07.089" target="_blank" rel="noopener noreferrer" class="name">An analytical approach for physical modeling of hot-carrier induced degradation<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2011-09-01">September 2011</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Tyaginov, S.; Starkov, I.; Enichlmair, H.</span> </li> <li> Microelectronics Reliability, Vol. 51, Issue 9-11</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1016/j.microrel.2011.07.089" class="text-muted" target="_blank" rel="noopener noreferrer">10.1016/j.microrel.2011.07.089<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> <div> <h2 class="title" style="margin-bottom:0;" data-apporder=""> <a href="https://doi.org/10.1038/nature07125" target="_blank" rel="noopener noreferrer" class="name">Entangled states of trapped atomic ions<span class="fa fa-external-link" aria-hidden="true"></span></a> <small class="text-muted" style="text-transform:uppercase; font-size:0.75rem;"><br/> <span class="type">journal</span>, <span class="date" data-date="2008-06-01">June 2008</span></small> </h2> <ul class="small references-list" style="list-style-type:none; margin-top: 0.5em; padding-left: 0; line-height:1.8em;"> <li> <span style="color:#5C7B2D;"> Blatt, Rainer; Wineland, David</span> </li> <li> Nature, Vol. 453, Issue 7198</li> <li> <span class="text-muted related-url">DOI: <a href="https://doi.org/10.1038/nature07125" class="text-muted" target="_blank" rel="noopener noreferrer">10.1038/nature07125<span class="fa fa-external-link" aria-hidden="true"></span></a></span> </li> </ul> <hr/> </div> </div> <div class="pagination-container small"> <a class="pure-button prev page" href="#" rel="prev"><span class="fa fa-angle-left"></span></a><ul class="pagination d-inline-block" style="padding-left:.2em;"></ul><a class="pure-button next page" href="#" rel="next"><span class="fa fa-angle-right"></span></a> </div> </div> </div> <div class="col-sm-3 order-sm-3"> <ul class="nav nav-stacked"> <li class="active"><a href="" class="reference-type-filter tab-nav" data-tab="biblio-references" data-filter="type" data-pattern="*"><span class="fa fa-angle-right"></span> All References</a></li> <li class="small" style="margin-left:.75em; text-transform:capitalize;"><a href="" class="reference-type-filter tab-nav" data-tab="biblio-references" data-filter="type" data-pattern="conference"><span class="fa fa-angle-right"></span> conference<small class="text-muted"> (12)</small></a></li> <li class="small" style="margin-left:.75em; text-transform:capitalize;"><a href="" class="reference-type-filter tab-nav" data-tab="biblio-references" data-filter="type" data-pattern="journal"><span class="fa fa-angle-right"></span> journal<small class="text-muted"> (265)</small></a></li> </ul> <div style="margin-top:2em;"> <form class="pure-form small text-muted reference-search"> <label for="reference-search-text" class="sr-only">Search</label> <input class="search form-control pure-input-1" id="reference-search-text" placeholder="Search" style="margin-bottom:10px;" /> <fieldset> <div style="margin-left:1em; font-weight:normal; line-height: 1.6em;"><input type="radio" class="sort" name="references-sort" data-sort="name" style="position:relative;top:2px;" id="reference-search-sort-name"><label for="reference-search-sort-name" style="margin-left: .3em;">Sort by title</label></div> <div style="margin-left:1em; font-weight:normal; line-height: 1.6em;"><input type="radio" class="sort" name="references-sort" data-sort="date" data-order="desc" style="position:relative;top:2px;" id="reference-search-sort-date"><label for="reference-search-sort-date" style="margin-left: .3em;">Sort by date</label></div> </fieldset> <div class="text-left" style="margin-left:1em;"> <a href="" class="filter-clear clearfix" title="Clear filter / sort" style="font-weight:normal; float:none;">[ × clear filter / sort ]</a> </div> </form> </div> </div> </div> </section> <section id="biblio-related" class="tab-content tab-content-sec " data-tab="biblio"> <div class="row"> <div class="col-sm-9 order-sm-9"> <section id="biblio-similar" class="tab-content tab-content-sec active" data-tab="related"> <div class="padding"> <p class="lead text-muted" style="font-size: 18px; margin-top:0px;">Similar Records in DOE PAGES and OSTI.GOV collections:</p> <aside> <ul class="item-list" itemscope itemtype="http://schema.org/ItemList" style="padding-left:0; list-style-type: none;"> <li> <div class="article item document" itemprop="itemListElement" itemscope itemtype="http://schema.org/WebPage"><meta itemprop="position" content="1" /><div class="item-info"> <h2 class="title" itemprop="name headline"><a href="/pages/biblio/1548218-multi-layered-interactive-energy-space-modeling-near-optimal-electrification-terrestrial-shipboard-aircraft-systems" itemprop="url">Multi-layered interactive energy space modeling for near-optimal electrification of terrestrial, shipboard and aircraft systems</a></h2> <div class="metadata"> <small class="text-muted" style="text-transform:uppercase;display:block;line-height:2.5em;">Journal Article</small><span class="authors"> <span class="author">Ilić, Marija D.</span> ; <span class="author">Jaddivada, Rupamathi</span> <span class="text-muted pubdata"> - Annual Reviews in Control</span> </span> </div> <div class="metadata-links small clearfix text-muted" style="margin-top:15px;"> <span class="fa fa-book text-muted" aria-hidden="true"></span> Cited by 1<div class="pure-menu pure-menu-horizontal pull-right" style="width:unset;"> <ul class="pure-menu-list"> <li class="pure-menu-item"><span class="item-info-ftlink">DOI: <a class="misc doi-link " href="https://doi.org/10.1016/j.arcontrol.2018.04.009" target="_blank" rel="noopener" title="Link to document DOI" data-ostiid="1548218" data-product-type="Journal Article" data-product-subtype="PM" >10.1016/j.arcontrol.2018.04.009</a></span></li> </ul> </div> </div> </div> <div class="clearfix"></div> </div> </li> <li> <div class="article item document" itemprop="itemListElement" itemscope itemtype="http://schema.org/WebPage"><meta itemprop="position" content="2" /><div class="item-info"> <h2 class="title" itemprop="name headline"><a href="/pages/biblio/1523570-optical-properties-nanoporous-gold-foams" itemprop="url">Optical properties of nanoporous gold foams</a></h2> <div class="metadata"> <small class="text-muted" style="text-transform:uppercase;display:block;line-height:2.5em;">Journal Article</small><span class="authors"> <span class="author">Asane, J. K.</span> ; <span class="author">Qi, Z.</span> ; <span class="author">Biener, M. M.</span> ; <span class="author">...</span> <span class="text-muted pubdata"> - AIP Advances</span> </span> </div> <div class="abstract">We fabricated and experimentally studied Au nano-foams and Al<sub>2</sub>O<sub>3</sub> scaffolds filled with Au nanoparticles (NPs). We found that while the reflectance spectra of Au nano-foams depended very little on the 8-10 nm Al<sub>2</sub>O<sub>3</sub> ALD coating, the spectra were highly sensitive to annealing, which increased the sizes of voids and ligaments from 50-100 nm to ~300 nm. The effective dielectric permittivities of the Au nano-foams and Al<sub>2</sub>O<sub>3</sub> scaffolds with Au NPs were extremely high, ~50. At the same time, Au nano-foams covered with a dielectric (MgF<sub>2</sub>) featured bright structural colors, calling for the model, which extends beyond the effective medium approximation.</div><div class="metadata-links small clearfix text-muted" style="margin-top:15px;"> <div class="pure-menu pure-menu-horizontal pull-right" style="width:unset;"> <ul class="pure-menu-list"> <li class="pure-menu-item"><span class="item-info-ftlink">DOI: <a class="misc doi-link " href="https://doi.org/10.1063/1.5030128" target="_blank" rel="noopener" title="Link to document DOI" data-ostiid="1523570" data-product-type="Journal Article" data-product-subtype="AM" >10.1063/1.5030128</a></span></li> <li class="pure-menu-item"><span class="item-info-ftlink"><a class="misc fulltext-link " href="/pages/servlets/purl/1523570" title="Link to document media" target="_blank" rel="noopener" data-ostiid="1523570" data-product-type="Journal Article" data-product-subtype="AM" >Full Text Available</a></span></li> </ul> </div> </div> </div> <div class="clearfix"></div> </div> </li> <li> <div class="article item document" itemprop="itemListElement" itemscope itemtype="http://schema.org/WebPage"><meta itemprop="position" content="3" /><div class="item-info"> <h2 class="title" itemprop="name headline"><a href="/pages/biblio/1412868-revealing-nature-extreme-coronal-line-emitter-sdss-j095209" itemprop="url">Revealing the nature of extreme coronal-line emitter SDSS J095209.56+214313.3</a></h2> <div class="metadata"> <small class="text-muted" style="text-transform:uppercase;display:block;line-height:2.5em;">Journal Article</small><span class="authors"> <span class="author">Palaversa, Lovro</span> ; <span class="author">Gezari, Suvi</span> ; <span class="author">Sesar, Branimir</span> ; <span class="author">...</span> <span class="text-muted pubdata"> - The Astrophysical Journal (Online)</span> </span> </div> <div class="abstract">Extreme coronal-line emitter (ECLE) SDSS J095209.56+214313.3, known by its strong, fading, high-ionization lines, has been a long-standing candidate for a tidal disruption event; however, a supernova (SN) origin has not yet been ruled out. Here we add several new pieces of information to the puzzle of the nature of the transient that powered its variable coronal lines: (1) an optical light curve from the Lincoln Near Earth Asteroid Research (LINEAR) survey that serendipitously catches the optical flare, and (2) late-time observations of the host galaxy with the Swift Ultraviolet and Optical Telescope (UVOT) and X-ray telescope (XRT) and the ground-based<a href='#' onclick='$(this).hide().next().show().next().show();return false;' style='margin-left:10px;'>more »</a><span style='display:none;'> Mercator telescope. The well-sampled, ~10 yr long, unfiltered LINEAR light curve constrains the onset of the flare to a precision of ±5 days and enables us to place a lower limit on the peak optical magnitude. Difference imaging allows us to estimate the location of the flare in proximity of the host galaxy core. Comparison of the GALEX data (early 2006) with the recently acquired Swift UVOT (2015 June) and Mercator observations (2015 April) demonstrates a decrease in the UV flux over a ~10 yr period, confirming that the flare was UV-bright. The long-lived UV-bright emission, detected 1.8 rest-frame years after the start of the flare, strongly disfavors an SN origin. In conclusion, these new data allow us to conclude that the flare was indeed powered by the tidal disruption of a star by a supermassive black hole and that tidal disruption events are in fact capable of powering the enigmatic class of ECLEs.</span><a href='#' onclick='$(this).hide().prev().hide().prev().show();return false;' style='margin-left:10px;display:none;'>« less</a></div><div class="metadata-links small clearfix text-muted" style="margin-top:15px;"> <span class="fa fa-book text-muted" aria-hidden="true"></span> Cited by 7<div class="pure-menu pure-menu-horizontal pull-right" style="width:unset;"> <ul class="pure-menu-list"> <li class="pure-menu-item"><span class="item-info-ftlink">DOI: <a class="misc doi-link " href="https://doi.org/10.3847/0004-637X/819/2/151" target="_blank" rel="noopener" title="Link to document DOI" data-ostiid="1412868" data-product-type="Journal Article" data-product-subtype="AM" >10.3847/0004-637X/819/2/151</a></span></li> <li class="pure-menu-item"><span class="item-info-ftlink"><a class="misc fulltext-link " href="/pages/servlets/purl/1412868" title="Link to document media" target="_blank" rel="noopener" data-ostiid="1412868" data-product-type="Journal Article" data-product-subtype="AM" >Full Text Available</a></span></li> </ul> </div> </div> </div> <div class="clearfix"></div> </div> </li> <li> <div class="article item document" itemprop="itemListElement" itemscope itemtype="http://schema.org/WebPage"><meta itemprop="position" content="4" /><div class="item-info"> <h2 class="title" itemprop="name headline"><a href="/biblio/1334415-data-diodes-support-trustworthy-cyber-infrastructure-net-centric-cyber-decision-support" itemprop="url">Data Diodes in Support of Trustworthy Cyber Infrastructure and Net-Centric Cyber Decision Support</a></h2> <div class="metadata"> <small class="text-muted" style="text-transform:uppercase;display:block;line-height:2.5em;">Journal Article</small><span class="authors"> <span class="author">Okhravi, Hamed</span> ; <span class="author">Sheldon, Frederick T.</span> ; <span class="author">Haines, Joshua</span> <span class="text-muted pubdata"> - Energy Systems</span> </span> </div> <div class="abstract">Data diodes provide protection of critical cyber assets by the means of physically enforcing traffic direction on the network. In order to deploy data diodes effectively, it is imperative to understand the protection they provide, the protection they do not provide, their limitations, and their place in the larger security infrastructure. In this work, we study data diodes, their functionalities and limitations. We then propose two critical infrastructure systems that can benefit from the additional protection offered by data diodes: process control networks and net-centric cyber decision support systems. We review the security requirements of these systems, describe the architectures,<a href='#' onclick='$(this).hide().next().show().next().show();return false;' style='margin-left:10px;'>more »</a><span style='display:none;'> and study the trade-offs. Finally, the architectures are evaluated against different attack patterns.</span><a href='#' onclick='$(this).hide().prev().hide().prev().show();return false;' style='margin-left:10px;display:none;'>« less</a></div><div class="metadata-links small clearfix text-muted" style="margin-top:15px;"> <div class="pure-menu pure-menu-horizontal pull-right" style="width:unset;"> <ul class="pure-menu-list"> <li class="pure-menu-item"><span class="item-info-ftlink">DOI: <a class="misc doi-link " href="https://doi.org/10.1007/978-3-642-38134-8_10" target="_blank" rel="noopener" title="Link to document DOI" data-ostiid="1334415" data-product-type="Journal Article" data-product-subtype="AC" >10.1007/978-3-642-38134-8_10</a></span></li> </ul> </div> </div> </div> <div class="clearfix"></div> </div> </li> <li> <div class="article item document" itemprop="itemListElement" itemscope itemtype="http://schema.org/WebPage"><meta itemprop="position" content="5" /><div class="item-info"> <h2 class="title" itemprop="name headline"><a href="/pages/biblio/1595422-broadband-high-speed-large-amplitude-dynamic-optical-switching-yttrium-doped-cadmium-oxide" itemprop="url">Broadband, High-Speed, and Large-Amplitude Dynamic Optical Switching with Yttrium-Doped Cadmium Oxide</a></h2> <div class="metadata"> <small class="text-muted" style="text-transform:uppercase;display:block;line-height:2.5em;">Journal Article</small><span class="authors"> <span class="author">Saha, Soham</span> ; <span class="author">Diroll, Benjamin T.</span> ; <span class="author">Shank, Joshua</span> ; <span class="author">...</span> <span class="text-muted pubdata"> - Advanced Functional Materials</span> </span> </div> <div class="abstract">Transparent conducting oxides, such as doped indium oxide, zinc oxide, and cadmium oxide (CdO), have recently attracted attention as tailorable materials for applications in nanophotonic and plasmonic devices such as low-loss modulators and all-optical switches due to their tunable optical properties, fast optical response, and low losses. Here, optically induced extraordinarily large reflection changes (up to 135%) are demonstrated in bulk CdO films in the mid-infrared wavelength range close to the epsilon near zero (ENZ) point. To develop a better understanding of how doping level affects the static and dynamic optical properties of CdO, the evolution of the optical properties<a href='#' onclick='$(this).hide().next().show().next().show();return false;' style='margin-left:10px;'>more »</a><span style='display:none;'> with yttrium (Y) doping is investigated. An increase in the metallicity and a blueshift of the ENZ point with increasing Y-concentrations is observed. Broadband all-optical switching from near-infrared to mid-infrared wavelengths is demonstrated. The major photoexcited carrier relaxation mechanisms in CdO are identified and it is shown that the relaxation times can be significantly reduced by increasing the dopant concentration in the film. Our report could pave the way to practical dynamic and passive optical and plasmonic devices with doped CdO spanning wavelengths from the ultraviolet to the mid-infrared region.</span><a href='#' onclick='$(this).hide().prev().hide().prev().show();return false;' style='margin-left:10px;display:none;'>« less</a></div><div class="metadata-links small clearfix text-muted" style="margin-top:15px;"> <span class="fa fa-book text-muted" aria-hidden="true"></span> Cited by 2<div class="pure-menu pure-menu-horizontal pull-right" style="width:unset;"> <ul class="pure-menu-list"> <li class="pure-menu-item"><span class="item-info-ftlink">DOI: <a class="misc doi-link " href="https://doi.org/10.1002/adfm.201908377" target="_blank" rel="noopener" title="Link to document DOI" data-ostiid="1595422" data-product-type="Journal Article" data-product-subtype="AM" >10.1002/adfm.201908377</a></span></li> </ul> </div> </div> </div> <div class="clearfix"></div> </div> </li> </ul> </aside> </div> </section> </div> <div class="col-sm-3 order-sm-3"> <ul class="nav nav-stacked"> <li class="active"><a class="tab-nav disabled" data-tab="related" style="color: #636c72 !important; opacity: 1;"><span class="fa fa-angle-right"></span> Similar Records</a></li> </ul> </div> </div> </section> </div></div> </div> </div> </section> <footer class="" style="background-color:#f9f9f9; /* padding-top: 0.5rem; */"> <div class="footer-minor"> <div class="container"> <hr class="footer-separator" /> <div class="text-center" style="margin-top:1.25rem;"> <div class="pure-menu pure-menu-horizontal"> <ul class="pure-menu-list" id="footer-org-menu"> <li class="pure-menu-item"> <a href="https://energy.gov" target="_blank" rel="noopener noreferrer"> <img src="data:image/gif;base64,R0lGODlhAQABAIAAAP///wAAACH5BAEAAAAALAAAAAABAAEAAAICRAEAOw==" class="sprite sprite-footer-us-doe-min" alt="U.S. Department of Energy" /> </a> </li> <li class="pure-menu-item"> <a href="https://www.energy.gov/science/office-science" target="_blank" rel="noopener noreferrer"> <img src="data:image/gif;base64,R0lGODlhAQABAIAAAP///wAAACH5BAEAAAAALAAAAAABAAEAAAICRAEAOw==" class="sprite sprite-footer-office-of-science-min" alt="Office of Science" /> </a> </li> <li class="pure-menu-item"> <a href="/"> <img src="data:image/gif;base64,R0lGODlhAQABAIAAAP///wAAACH5BAEAAAAALAAAAAABAAEAAAICRAEAOw==" class="sprite sprite-footer-osti-min" alt="Office of Scientific and Technical Information" /> </a> </li> </ul> </div> </div> <div class="text-center small" style="margin-top:0.5em;margin-bottom:2.0rem;"> <div class="pure-menu pure-menu-horizontal"> <ul class="pure-menu-list"> <li class="pure-menu-item"><a href="/disclaim" class="pure-menu-link"><span class="fa fa-institution"></span> Website Policies <span class="hidden-xs">/ Important Links</span></a></li> <li class="pure-menu-item"><a href="/pages/contact" class="pure-menu-link"><span class="fa fa-comments-o"></span> Contact Us</a></li> <li class="d-block d-md-none"></li> <li class="pure-menu-item"><a href="https://www.facebook.com/ostigov" target="_blank" rel="noopener noreferrer" class="pure-menu-link social"><span class="fa fa-facebook" style=""></span></a></li> <li class="pure-menu-item"><a href="https://twitter.com/OSTIgov" target="_blank" rel="noopener noreferrer" class="pure-menu-link social"><span class="fa fa-twitter" style=""></span></a></li> <li class="pure-menu-item"><a href="https://www.youtube.com/user/ostigov" target="_blank" rel="noopener noreferrer" class="pure-menu-link social"><span class="fa fa-youtube-play" style=""></span></a></li> </ul> </div> </div> </div> </div> </footer> <link href="/pages/css/pages.fonts.200611.1302.css" rel="stylesheet"> <script src="/pages/js/pages.200611.1302.js"></script><noscript></noscript> <script defer src="/pages/js/pages.biblio.200611.1302.js"></script><noscript></noscript> <script defer src="/pages/js/lity.js"></script><noscript></noscript> <script async type="text/javascript" src="/pages/js/Universal-Federated-Analytics-Min.js?agency=DOE" id="_fed_an_ua_tag"></script><noscript></noscript> </body> <!-- DOE PAGES v.200611.1302 --> </html>