DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Self-assembled single-digit nanometer memory cells

ORCiD logo [1];  [2]; ORCiD logo [3]; ORCiD logo [1]
  1. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
  2. Department of Automation, China University of Geosciences, Wuhan 430074, People's Republic of China
  3. EECS, University of California-Berkeley, Berkeley, California 94720, USA
Publication Date:
Sponsoring Org.:
OSTI Identifier:
Grant/Contract Number:  
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 113 Journal Issue: 6; Journal ID: ISSN 0003-6951
American Institute of Physics
Country of Publication:
United States

Citation Formats

Hong, J., Dong, K., Bokor, J., and You, L. Self-assembled single-digit nanometer memory cells. United States: N. p., 2018. Web. doi:10.1063/1.5033972.
Hong, J., Dong, K., Bokor, J., & You, L. Self-assembled single-digit nanometer memory cells. United States.
Hong, J., Dong, K., Bokor, J., and You, L. Mon . "Self-assembled single-digit nanometer memory cells". United States.
title = {Self-assembled single-digit nanometer memory cells},
author = {Hong, J. and Dong, K. and Bokor, J. and You, L.},
abstractNote = {},
doi = {10.1063/1.5033972},
journal = {Applied Physics Letters},
number = 6,
volume = 113,
place = {United States},
year = {2018},
month = {8}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 3 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers
journal, October 2004

  • Parkin, Stuart S. P.; Kaiser, Christian; Panchula, Alex
  • Nature Materials, Vol. 3, Issue 12
  • DOI: 10.1038/nmat1256

Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy
journal, March 2012

  • Gajek, M.; Nowak, J. J.; Sun, J. Z.
  • Applied Physics Letters, Vol. 100, Issue 13
  • DOI: 10.1063/1.3694270

The Physics of Spin-Transfer Torque Switching in Magnetic Tunneling Junctions in Sub-10 nm Size Range
journal, July 2016

  • Hong, Jeongmin; Hadjikhani, Ali; Stone, Mark
  • IEEE Transactions on Magnetics, Vol. 52, Issue 7
  • DOI: 10.1109/TMAG.2016.2530622

CoFeB Thickness Dependence of Thermal Stability Factor in CoFeB/MgO Perpendicular Magnetic Tunnel Junctions
journal, January 2012

Energy-efficient spin-transfer torque magnetization reversal in sub-10-nm magnetic tunneling junction point contacts
journal, March 2013

  • Hong, Jeongmin; Liang, Ping; Safonov, Vladimir L.
  • Journal of Nanoparticle Research, Vol. 15, Issue 4
  • DOI: 10.1007/s11051-013-1599-0

3D multilevel spin transfer torque devices
journal, March 2018

  • Hong, J.; Stone, M.; Navarrete, B.
  • Applied Physics Letters, Vol. 112, Issue 11
  • DOI: 10.1063/1.5021336

Excitation of a Magnetic Multilayer by an Electric Current
journal, May 1998

Servo and tracking algorithm for a probe storage system
journal, February 2005

Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions
journal, February 2018

Read/write mechanisms and data storage system using atomic force microscopy and MEMS technology
journal, May 2002

Tunneling between ferromagnetic films
journal, September 1975

A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
journal, July 2010

  • Ikeda, S.; Miura, K.; Yamamoto, H.
  • Nature Materials, Vol. 9, Issue 9
  • DOI: 10.1038/nmat2804

Sub-10-nm-resolution electron-beam lithography toward very-high-density multilevel 3D nano-magnetic information devices
journal, May 2013

  • Lee, Beomseop; Hong, Jeongmin; Amos, Nissim
  • Journal of Nanoparticle Research, Vol. 15, Issue 6
  • DOI: 10.1007/s11051-013-1665-7

Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications
journal, June 2017

Junction size effect on switching current and thermal stability in CoFeB/MgO perpendicular magnetic tunnel junctions
journal, July 2011

  • Sato, H.; Yamanouchi, M.; Miura, K.
  • Applied Physics Letters, Vol. 99, Issue 4
  • DOI: 10.1063/1.3617429

Thermal stability of magnetic tunneling junctions with MgO barriers for high temperature spintronics
journal, July 2006

  • Liu, Xiaoyong; Mazumdar, Dipanjan; Shen, Weifeng
  • Applied Physics Letters, Vol. 89, Issue 2
  • DOI: 10.1063/1.2219997

Fabrication and characterization of bit-patterned media beyond 1.5 Tbit/in 2
journal, August 2011

Large Magnetoresistance at Room Temperature in Ferromagnetic Thin Film Tunnel Junctions
journal, April 1995

Giant magnetic tunneling effect in Fe/Al2O3/Fe junction
journal, January 1995

Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature
journal, August 2008

  • Ikeda, S.; Hayakawa, J.; Ashizawa, Y.
  • Applied Physics Letters, Vol. 93, Issue 8
  • DOI: 10.1063/1.2976435

Currents and torques in metallic magnetic multilayers
journal, June 2002

Electric-field-driven switching of individual magnetic skyrmions
journal, November 2016

  • Hsu, Pin-Jui; Kubetzka, André; Finco, Aurore
  • Nature Nanotechnology, Vol. 12, Issue 2
  • DOI: 10.1038/nnano.2016.234