Self-assembled single-digit nanometer memory cells
- Authors:
-
[1]
; [2]
; [3]
; [1]
- School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
- Department of Automation, China University of Geosciences, Wuhan 430074, People's Republic of China
- EECS, University of California-Berkeley, Berkeley, California 94720, USA
- Publication Date:
- Grant/Contract Number:
- AC02-05CH11231
- Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Name: Applied Physics Letters Journal Volume: 113 Journal Issue: 6; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics
- Sponsoring Org:
- USDOE
- Country of Publication:
- United States
- Language:
- English
- OSTI Identifier:
- 1463756
Hong, J., Dong, K., Bokor, J., and You, L.. Self-assembled single-digit nanometer memory cells. United States: N. p.,
Web. doi:10.1063/1.5033972.
Hong, J., Dong, K., Bokor, J., & You, L.. Self-assembled single-digit nanometer memory cells. United States. doi:10.1063/1.5033972.
Hong, J., Dong, K., Bokor, J., and You, L.. 2018.
"Self-assembled single-digit nanometer memory cells". United States.
doi:10.1063/1.5033972.
@article{osti_1463756,
title = {Self-assembled single-digit nanometer memory cells},
author = {Hong, J. and Dong, K. and Bokor, J. and You, L.},
abstractNote = {},
doi = {10.1063/1.5033972},
journal = {Applied Physics Letters},
number = 6,
volume = 113,
place = {United States},
year = {2018},
month = {8}
}