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Title: Self-assembled single-digit nanometer memory cells

Authors:
ORCiD logo [1];  [2]; ORCiD logo [3]; ORCiD logo [1]
  1. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
  2. Department of Automation, China University of Geosciences, Wuhan 430074, People's Republic of China
  3. EECS, University of California-Berkeley, Berkeley, California 94720, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1463756
Grant/Contract Number:  
[AC02-05CH11231]
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
[Journal Name: Applied Physics Letters Journal Volume: 113 Journal Issue: 6]; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Hong, J., Dong, K., Bokor, J., and You, L. Self-assembled single-digit nanometer memory cells. United States: N. p., 2018. Web. doi:10.1063/1.5033972.
Hong, J., Dong, K., Bokor, J., & You, L. Self-assembled single-digit nanometer memory cells. United States. doi:10.1063/1.5033972.
Hong, J., Dong, K., Bokor, J., and You, L. Mon . "Self-assembled single-digit nanometer memory cells". United States. doi:10.1063/1.5033972.
@article{osti_1463756,
title = {Self-assembled single-digit nanometer memory cells},
author = {Hong, J. and Dong, K. and Bokor, J. and You, L.},
abstractNote = {},
doi = {10.1063/1.5033972},
journal = {Applied Physics Letters},
number = [6],
volume = [113],
place = {United States},
year = {2018},
month = {8}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.5033972

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Cited by: 1 work
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