Activation of buried p-GaN in MOCVD-regrown vertical structures

Li, Wenshen; Nomoto, Kazuki; Lee, Kevin; Islam, S. M.; Hu, Zongyang; Zhu, Mingda; Gao, Xiang; Xie, Jinqiao; Pilla, Manyam; Jena, Debdeep; Xing, Huili Grace

doi:10.1063/1.5041879

Title: Activation of buried p-GaN in MOCVD-regrown vertical structures

Journal Article · 06 August 2018 · Applied Physics Letters

DOI: https://doi.org/10.1063/1.5041879 · OSTI ID:1463218

Li, Wenshen ^[1]; Nomoto, Kazuki ^[1]; Lee, Kevin ^[1]; Islam, S. M. ^[1];

^[1]; Zhu, Mingda ^[1]; Gao, Xiang ^[2]; Xie, Jinqiao ^[3]; Pilla, Manyam ^[3]; Jena, Debdeep ^[4];

^[4]

School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA
IQE RF LLC, Somerset, New Jersey 08873, USA
Qorvo, Inc., Richardson, Texas 75080, USA
School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA, Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA

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Sponsoring Organization:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

Grant/Contract Number:: AR0000454

OSTI ID:: 1463218

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 113; ISSN 0003-6951

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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