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This content will become publicly available on August 7, 2019

Title: Activation of buried p-GaN in MOCVD-regrown vertical structures

Authors:
 [1] ;  [1] ;  [1] ;  [1] ; ORCiD logo [1] ;  [1] ;  [2] ;  [3] ;  [3] ;  [4] ; ORCiD logo [4]
  1. School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA
  2. IQE RF LLC, Somerset, New Jersey 08873, USA
  3. Qorvo, Inc., Richardson, Texas 75080, USA
  4. School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA, Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Publication Date:
Grant/Contract Number:
AR0000454
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 113 Journal Issue: 6; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1463218