Activation of buried p-GaN in MOCVD-regrown vertical structures

Li, Wenshen; Nomoto, Kazuki; Lee, Kevin; Islam, S. M.; Hu, Zongyang; Zhu, Mingda; Gao, Xiang; Xie, Jinqiao; Pilla, Manyam; Jena, Debdeep; Xing, Huili Grace

doi:10.1063/1.5041879

Title: Activation of buried p-GaN in MOCVD-regrown vertical structures

Authors:

Li, Wenshen ^[1]; Nomoto, Kazuki ^[1]; Lee, Kevin ^[1]; Islam, S. M. ^[1];

^[1]; Zhu, Mingda ^[1]; Gao, Xiang ^[2]; Xie, Jinqiao ^[3]; Pilla, Manyam ^[3]; Jena, Debdeep ^[4];

^[4]

School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA
IQE RF LLC, Somerset, New Jersey 08873, USA
Qorvo, Inc., Richardson, Texas 75080, USA
School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA, Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA

Publication Date:: Mon Aug 06 00:00:00 EDT 2018

Sponsoring Org.:: USDOE Advanced Research Projects Agency - Energy (ARPA-E)

OSTI Identifier:: 1463218

Grant/Contract Number:: AR0000454

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Name: Applied Physics Letters Journal Volume: 113 Journal Issue: 6; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Li, Wenshen, Nomoto, Kazuki, Lee, Kevin, Islam, S. M., Hu, Zongyang, Zhu, Mingda, Gao, Xiang, Xie, Jinqiao, Pilla, Manyam, Jena, Debdeep, and Xing, Huili Grace. Activation of buried p-GaN in MOCVD-regrown vertical structures.  United States: N. p., 2018. 
Web.  doi:10.1063/1.5041879.

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                    Li, Wenshen, Nomoto, Kazuki, Lee, Kevin, Islam, S. M., Hu, Zongyang, Zhu, Mingda, Gao, Xiang, Xie, Jinqiao, Pilla, Manyam, Jena, Debdeep, & Xing, Huili Grace. Activation of buried p-GaN in MOCVD-regrown vertical structures.  United States.  https://doi.org/10.1063/1.5041879

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                    Li, Wenshen, Nomoto, Kazuki, Lee, Kevin, Islam, S. M., Hu, Zongyang, Zhu, Mingda, Gao, Xiang, Xie, Jinqiao, Pilla, Manyam, Jena, Debdeep, and Xing, Huili Grace. Mon .  
"Activation of buried p-GaN in MOCVD-regrown vertical structures".  United States.  https://doi.org/10.1063/1.5041879.

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@article{osti_1463218,

  title        = {Activation of buried p-GaN in MOCVD-regrown vertical structures},

  author       = {Li, Wenshen and Nomoto, Kazuki and Lee, Kevin and Islam, S. M. and Hu, Zongyang and Zhu, Mingda and Gao, Xiang and Xie, Jinqiao and Pilla, Manyam and Jena, Debdeep and Xing, Huili Grace},

  abstractNote = {},

  doi          = {10.1063/1.5041879},

  journal      = {Applied Physics Letters},

  number       = 6,

  volume       = 113,

  place        = {United States},

  year         = {Mon Aug 06 00:00:00 EDT 2018},

  month        = {Mon Aug 06 00:00:00 EDT 2018}

}

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Title: Activation of buried p-GaN in MOCVD-regrown vertical structures

Citation Formats

GaN HBT: toward an RF device journal, March 2001

Hole Compensation Mechanism of P-Type GaN Films journal, May 1992

GaN-Based Light Emitting Diodes with Tunnel Junctions journal, August 2001

880 V/ $2.7~\text{m}\Omega\cdot\text{cm}^{\text{2}}$ MIS Gate Trench CAVET on Bulk GaN Substrates journal, June 2018

Development of GaN Vertical Trench-MOSFET With MBE Regrown Channel journal, June 2018

Thermal Annealing Effects on P-Type Mg-Doped GaN Films journal, February 1992

Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition journal, October 1995

In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN substrates journal, March 2017

Local vibrational modes of the Mg–H acceptor complex in GaN journal, December 1996

Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown journal, December 2015

1.8 mΩ·cm 2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation journal, April 2015

Fermi level dependence of hydrogen diffusivity in GaN journal, September 2001

First-Principles Calculations on Mg Impurity and Mg-H Complex in GaN journal, July 1996

Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions journal, May 2001

Mechanism for low temperature activation of Mg-doped GaN with Ni catalysts journal, December 2001

Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer journal, March 2017

Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition journal, January 2003

Activation of p-Type GaN in a Pure Oxygen Ambient journal, May 2001

1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy journal, August 2017

1.5-kV and 2.2-m<inline-formula> <tex-math notation="TeX">\(\Omega \) </tex-math></inline-formula>-cm<inline-formula> <tex-math notation="TeX">\(^{2}\) </tex-math></inline-formula> Vertical GaN Transistors on Bulk-GaN Substrates journal, September 2014

Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes journal, March 1994

Hydrogen in GaN: Novel Aspects of a Common Impurity journal, December 1995

Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV journal, November 2015

600 V/ $1.7~\Omega$ Normally-Off GaN Vertical Trench Metal–Oxide–Semiconductor Field-Effect Transistor journal, November 2016

Role of hydrogen in doping of GaN journal, March 1996

Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction journal, May 2015

Influence of oxygen on the activation of p -type GaN journal, April 2000

Very high voltage operation (>330 V) with high current gain of AlGaN/GaN HBTs journal, March 2003

GaN-on-Si Quasi-Vertical Power MOSFETs journal, January 2018

Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions journal, August 2013

Low Temperature Activation of Mg-Doped GaN in O2 Ambient journal, February 2002

P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI) journal, December 1989

Design and Realization of GaN Trench Junction-Barrier-Schottky-Diodes journal, April 2017

High voltage and high current density vertical GaN power diodes journal, June 2016

AlGaN/GaN heterojunction bipolar transistor journal, June 1999

GaN HBT: toward an RF device
journal, March 2001

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journal, May 1992

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journal, August 2001

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journal, June 2018

Development of GaN Vertical Trench-MOSFET With MBE Regrown Channel
journal, June 2018

Thermal Annealing Effects on P-Type Mg-Doped GaN Films
journal, February 1992

Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition
journal, October 1995

In Situ Oxide, GaN Interlayer-Based Vertical Trench MOSFET (OG-FET) on Bulk GaN substrates
journal, March 2017

Local vibrational modes of the Mg–H acceptor complex in GaN
journal, December 1996

Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown
journal, December 2015

1.8 mΩ·cm ² vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
journal, April 2015

Fermi level dependence of hydrogen diffusivity in GaN
journal, September 2001

First-Principles Calculations on Mg Impurity and Mg-H Complex in GaN
journal, July 1996

Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions
journal, May 2001

Mechanism for low temperature activation of Mg-doped GaN with Ni catalysts
journal, December 2001

Normally OFF Trench CAVET With Active Mg-Doped GaN as Current Blocking Layer
journal, March 2017

Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
journal, January 2003

Activation of p-Type GaN in a Pure Oxygen Ambient
journal, May 2001

1.1-kV Vertical GaN p-n Diodes With p-GaN Regrown by Molecular Beam Epitaxy
journal, August 2017

1.5-kV and 2.2-m<inline-formula> <tex-math notation="TeX">\(\Omega \) </tex-math></inline-formula>-cm<inline-formula> <tex-math notation="TeX">\(^{2}\) </tex-math></inline-formula> Vertical GaN Transistors on Bulk-GaN Substrates
journal, September 2014

Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
journal, March 1994

Hydrogen in GaN: Novel Aspects of a Common Impurity
journal, December 1995

Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV
journal, November 2015

600 V/ $1.7~\Omega$ Normally-Off GaN Vertical Trench Metal–Oxide–Semiconductor Field-Effect Transistor
journal, November 2016

Role of hydrogen in doping of GaN
journal, March 1996

Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction
journal, May 2015

Influence of oxygen on the activation of p -type GaN
journal, April 2000

Very high voltage operation (>330 V) with high current gain of AlGaN/GaN HBTs
journal, March 2003

GaN-on-Si Quasi-Vertical Power MOSFETs
journal, January 2018

Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions
journal, August 2013

Low Temperature Activation of Mg-Doped GaN in O2 Ambient
journal, February 2002

P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
journal, December 1989

Design and Realization of GaN Trench Junction-Barrier-Schottky-Diodes
journal, April 2017

High voltage and high current density vertical GaN power diodes
journal, June 2016

AlGaN/GaN heterojunction bipolar transistor
journal, June 1999