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This content will become publicly available on August 7, 2019

Title: Activation of buried p-GaN in MOCVD-regrown vertical structures

Authors:
 [1] ;  [1] ;  [1] ;  [1] ; ORCiD logo [1] ;  [1] ;  [2] ;  [3] ;  [3] ;  [4] ; ORCiD logo [4]
  1. School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA
  2. IQE RF LLC, Somerset, New Jersey 08873, USA
  3. Qorvo, Inc., Richardson, Texas 75080, USA
  4. School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853, USA, Department of Material Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Publication Date:
Grant/Contract Number:
AR0000454
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 113 Journal Issue: 6; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1463218

Li, Wenshen, Nomoto, Kazuki, Lee, Kevin, Islam, S. M., Hu, Zongyang, Zhu, Mingda, Gao, Xiang, Xie, Jinqiao, Pilla, Manyam, Jena, Debdeep, and Xing, Huili Grace. Activation of buried p-GaN in MOCVD-regrown vertical structures. United States: N. p., Web. doi:10.1063/1.5041879.
Li, Wenshen, Nomoto, Kazuki, Lee, Kevin, Islam, S. M., Hu, Zongyang, Zhu, Mingda, Gao, Xiang, Xie, Jinqiao, Pilla, Manyam, Jena, Debdeep, & Xing, Huili Grace. Activation of buried p-GaN in MOCVD-regrown vertical structures. United States. doi:10.1063/1.5041879.
Li, Wenshen, Nomoto, Kazuki, Lee, Kevin, Islam, S. M., Hu, Zongyang, Zhu, Mingda, Gao, Xiang, Xie, Jinqiao, Pilla, Manyam, Jena, Debdeep, and Xing, Huili Grace. 2018. "Activation of buried p-GaN in MOCVD-regrown vertical structures". United States. doi:10.1063/1.5041879.
@article{osti_1463218,
title = {Activation of buried p-GaN in MOCVD-regrown vertical structures},
author = {Li, Wenshen and Nomoto, Kazuki and Lee, Kevin and Islam, S. M. and Hu, Zongyang and Zhu, Mingda and Gao, Xiang and Xie, Jinqiao and Pilla, Manyam and Jena, Debdeep and Xing, Huili Grace},
abstractNote = {},
doi = {10.1063/1.5041879},
journal = {Applied Physics Letters},
number = 6,
volume = 113,
place = {United States},
year = {2018},
month = {8}
}

Works referenced in this record:

Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
journal, March 1994
  • Nakamura, Shuji; Mukai, Takashi; Senoh, Masayuki
  • Applied Physics Letters, Vol. 64, Issue 13, p. 1687-1689
  • DOI: 10.1063/1.111832