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Title: Optical properties of (Bi 1-x In x ) 2 Se 3 thin films

Abstract

Bi2Se3 is a topological insulator with unique optical properties, including linearly-dispersing surface states. Many of the proposed device applications for Bi2Se3 require a lattice-matched trivially-insulating component. It is known that (Bi1-xInx)2Se3 is a trivial band insulator for moderate indium concentrations. In this paper, we grow and characterize the optical properties of (Bi1-xInx)2Se3 films with varying indium concentrations. We find that the lattice constant and optical bandgap for (Bi1-xInx)2Se3 varies linearly with concentration. We perform infrared reflection measurements as a function of polarization and angle, enabling us to model the permittivity for these materials. Again, we find that most parameters vary linearly with concentration. Our results for the pure end members are consistent with the literature values. This is the first report of optical values for the intermediate compounds, which are likely to be integral components of future topological insulator optical devices.

Authors:
; ORCiD logo
Publication Date:
Research Org.:
Univ. of Delaware, Newark, DE (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1463197
Alternate Identifier(s):
OSTI ID: 1502480; OSTI ID: 1886854
Grant/Contract Number:  
SC0016380
Resource Type:
Published Article
Journal Name:
Optical Materials Express
Additional Journal Information:
Journal Name: Optical Materials Express Journal Volume: 8 Journal Issue: 9; Journal ID: ISSN 2159-3930
Publisher:
Optical Society of America
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Anisotropic optical materials; Thin films, optical properties; topological insulators, optical properties

Citation Formats

Wang, Y., and Law, S.. Optical properties of (Bi 1-x In x ) 2 Se 3 thin films. United States: N. p., 2018. Web. doi:10.1364/OME.8.002570.
Wang, Y., & Law, S.. Optical properties of (Bi 1-x In x ) 2 Se 3 thin films. United States. https://doi.org/10.1364/OME.8.002570
Wang, Y., and Law, S.. Tue . "Optical properties of (Bi 1-x In x ) 2 Se 3 thin films". United States. https://doi.org/10.1364/OME.8.002570.
@article{osti_1463197,
title = {Optical properties of (Bi 1-x In x ) 2 Se 3 thin films},
author = {Wang, Y. and Law, S.},
abstractNote = {Bi2Se3 is a topological insulator with unique optical properties, including linearly-dispersing surface states. Many of the proposed device applications for Bi2Se3 require a lattice-matched trivially-insulating component. It is known that (Bi1-xInx)2Se3 is a trivial band insulator for moderate indium concentrations. In this paper, we grow and characterize the optical properties of (Bi1-xInx)2Se3 films with varying indium concentrations. We find that the lattice constant and optical bandgap for (Bi1-xInx)2Se3 varies linearly with concentration. We perform infrared reflection measurements as a function of polarization and angle, enabling us to model the permittivity for these materials. Again, we find that most parameters vary linearly with concentration. Our results for the pure end members are consistent with the literature values. This is the first report of optical values for the intermediate compounds, which are likely to be integral components of future topological insulator optical devices.},
doi = {10.1364/OME.8.002570},
journal = {Optical Materials Express},
number = 9,
volume = 8,
place = {United States},
year = {2018},
month = {8}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1364/OME.8.002570

Citation Metrics:
Cited by: 14 works
Citation information provided by
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Figures / Tables:

Fig 1 Fig 1: Lattice constant as a function of indium concentration determined using the [00015] x-ray diffraction peak. Dotted line is a linear fit to the data using the equation. Inset shows the [00015] peak for the five samples.

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Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.