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Title: Evidence for a conducting surface ground state in high-quality single crystalline FeSi

Abstract

We report anomalous physical properties of high-quality single-crystalline FeSi over a wide temperature range of 1.8–400 K. The electrical resistivity ρ(T) can be described by activated behavior with an energy gap Δ = 57 meV between 150 and 67 K, below which the estimated energy gap is significantly smaller. The magneto-resistivity and Hall coefficient change sign in the vicinity of 67 K, suggesting a change of dominant charge carriers. At ~19 K, ρ(T) undergoes a cross-over from semiconducting to metallic behavior which is very robust against external magnetic fields. The low-temperature metallic conductivity depends strongly on the width/thickness of the sample. In addition, no indication of a bulk-phase transition or onset of magnetic order is found down to 2 K from specific heat and magnetic susceptibility measurements. The measurements are consistent with one another and point to complex electronic transport behavior that apparently involves a conducting surface state in FeSi at low temperatures, suggesting the possibility that FeSi is a 3D topological insulator.

Authors:
 [1];  [2];  [3];  [4];  [4];  [5]
  1. Materials Science and Engineering Program, University of California, San Diego, La Jolla, CA 92093,, Center for Advanced Nanoscience, University of California, San Diego, La Jolla, CA 92093,
  2. Department of Physics, University of California, San Diego, La Jolla, CA 92093,
  3. Department of Chemistry, Louisiana State University, Baton Rouge, LA 70803,
  4. Department of NanoEngineering, University of California, San Diego, La Jolla, CA 92093
  5. Materials Science and Engineering Program, University of California, San Diego, La Jolla, CA 92093,, Center for Advanced Nanoscience, University of California, San Diego, La Jolla, CA 92093,, Department of Physics, University of California, San Diego, La Jolla, CA 92093,
Publication Date:
Research Org.:
Univ. of California, San Diego, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Security
OSTI Identifier:
1463065
Alternate Identifier(s):
OSTI ID: 1540301
Grant/Contract Number:  
DEFG02-04-ER46105; NA0002909; FG02-04ER46105
Resource Type:
Published Article
Journal Name:
Proceedings of the National Academy of Sciences of the United States of America
Additional Journal Information:
Journal Name: Proceedings of the National Academy of Sciences of the United States of America Journal Volume: 115 Journal Issue: 34; Journal ID: ISSN 0027-8424
Publisher:
Proceedings of the National Academy of Sciences
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Fang, Yuankan, Ran, Sheng, Xie, Weiwei, Wang, Shen, Meng, Ying Shirley, and Maple, M. Brian. Evidence for a conducting surface ground state in high-quality single crystalline FeSi. United States: N. p., 2018. Web. doi:10.1073/pnas.1806910115.
Fang, Yuankan, Ran, Sheng, Xie, Weiwei, Wang, Shen, Meng, Ying Shirley, & Maple, M. Brian. Evidence for a conducting surface ground state in high-quality single crystalline FeSi. United States. https://doi.org/10.1073/pnas.1806910115
Fang, Yuankan, Ran, Sheng, Xie, Weiwei, Wang, Shen, Meng, Ying Shirley, and Maple, M. Brian. Mon . "Evidence for a conducting surface ground state in high-quality single crystalline FeSi". United States. https://doi.org/10.1073/pnas.1806910115.
@article{osti_1463065,
title = {Evidence for a conducting surface ground state in high-quality single crystalline FeSi},
author = {Fang, Yuankan and Ran, Sheng and Xie, Weiwei and Wang, Shen and Meng, Ying Shirley and Maple, M. Brian},
abstractNote = {We report anomalous physical properties of high-quality single-crystalline FeSi over a wide temperature range of 1.8–400 K. The electrical resistivity ρ(T) can be described by activated behavior with an energy gap Δ = 57 meV between 150 and 67 K, below which the estimated energy gap is significantly smaller. The magneto-resistivity and Hall coefficient change sign in the vicinity of 67 K, suggesting a change of dominant charge carriers. At ~19 K, ρ(T) undergoes a cross-over from semiconducting to metallic behavior which is very robust against external magnetic fields. The low-temperature metallic conductivity depends strongly on the width/thickness of the sample. In addition, no indication of a bulk-phase transition or onset of magnetic order is found down to 2 K from specific heat and magnetic susceptibility measurements. The measurements are consistent with one another and point to complex electronic transport behavior that apparently involves a conducting surface state in FeSi at low temperatures, suggesting the possibility that FeSi is a 3D topological insulator.},
doi = {10.1073/pnas.1806910115},
journal = {Proceedings of the National Academy of Sciences of the United States of America},
number = 34,
volume = 115,
place = {United States},
year = {2018},
month = {8}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1073/pnas.1806910115

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Cited by: 1 work
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