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Title: Evidence for a conducting surface ground state in high-quality single crystalline FeSi

Abstract

We report anomalous physical properties of high-quality single-crystalline FeSi over a wide temperature range of 1.8–400 K. The electrical resistivity ρ(T) can be described by activated behavior with an energy gap Δ = 57 meV between 150 and 67 K, below which the estimated energy gap is significantly smaller. The magneto-resistivity and Hall coefficient change sign in the vicinity of 67 K, suggesting a change of dominant charge carriers. At ∼19 K, ρ(T) undergoes a cross-over from semiconducting to metallic behavior which is very robust against external magnetic fields. The low-temperature metallic conductivity depends strongly on the width/thickness of the sample. In addition, no indication of a bulk-phase transition or onset of magnetic order is found down to 2 K from specific heat and magnetic susceptibility measurements. The measurements are consistent with one another and point to complex electronic transport behavior that apparently involves a conducting surface state in FeSi at low temperatures, suggesting the possibility that FeSi is a 3D topological insulator.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Univ. of California, San Diego, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Security (NA-70)
OSTI Identifier:
1463065
Alternate Identifier(s):
OSTI ID: 1540301
Grant/Contract Number:  
DEFG02-04-ER46105; NA0002909; FG02-04ER46105
Resource Type:
Published Article
Journal Name:
Proceedings of the National Academy of Sciences of the United States of America
Additional Journal Information:
Journal Name: Proceedings of the National Academy of Sciences of the United States of America Journal Volume: 115 Journal Issue: 34; Journal ID: ISSN 0027-8424
Publisher:
Proceedings of the National Academy of Sciences
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Fang, Yuankan, Ran, Sheng, Xie, Weiwei, Wang, Shen, Meng, Ying Shirley, and Maple, M. Brian. Evidence for a conducting surface ground state in high-quality single crystalline FeSi. United States: N. p., 2018. Web. doi:10.1073/pnas.1806910115.
Fang, Yuankan, Ran, Sheng, Xie, Weiwei, Wang, Shen, Meng, Ying Shirley, & Maple, M. Brian. Evidence for a conducting surface ground state in high-quality single crystalline FeSi. United States. doi:10.1073/pnas.1806910115.
Fang, Yuankan, Ran, Sheng, Xie, Weiwei, Wang, Shen, Meng, Ying Shirley, and Maple, M. Brian. Mon . "Evidence for a conducting surface ground state in high-quality single crystalline FeSi". United States. doi:10.1073/pnas.1806910115.
@article{osti_1463065,
title = {Evidence for a conducting surface ground state in high-quality single crystalline FeSi},
author = {Fang, Yuankan and Ran, Sheng and Xie, Weiwei and Wang, Shen and Meng, Ying Shirley and Maple, M. Brian},
abstractNote = {We report anomalous physical properties of high-quality single-crystalline FeSi over a wide temperature range of 1.8–400 K. The electrical resistivity ρ(T) can be described by activated behavior with an energy gap Δ = 57 meV between 150 and 67 K, below which the estimated energy gap is significantly smaller. The magneto-resistivity and Hall coefficient change sign in the vicinity of 67 K, suggesting a change of dominant charge carriers. At ∼19 K, ρ(T) undergoes a cross-over from semiconducting to metallic behavior which is very robust against external magnetic fields. The low-temperature metallic conductivity depends strongly on the width/thickness of the sample. In addition, no indication of a bulk-phase transition or onset of magnetic order is found down to 2 K from specific heat and magnetic susceptibility measurements. The measurements are consistent with one another and point to complex electronic transport behavior that apparently involves a conducting surface state in FeSi at low temperatures, suggesting the possibility that FeSi is a 3D topological insulator.},
doi = {10.1073/pnas.1806910115},
journal = {Proceedings of the National Academy of Sciences of the United States of America},
number = 34,
volume = 115,
place = {United States},
year = {2018},
month = {8}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1073/pnas.1806910115

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Cited by: 1 work
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