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This content will become publicly available on April 10, 2019

Title: Strain-Induced Spin-Resonance Shifts in Silicon Devices

In spin-based quantum-information-processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance shifts can be large compared to intrinsic spin linewidths, and it is therefore important to study, understand, and model such effects in order to better predict device performance. We investigate a sample of bismuth donor spins implanted in a silicon chip, on top of which a superconducting aluminum microresonator is fabricated. The on-chip resonator provides two functions: it produces local strain in the silicon due to the larger thermal contraction of the aluminum, and it enables sensitive electron spin-resonance spectroscopy of donors close to the surface that experience this strain. Through finite-element strain simulations, we are able to reconstruct key features of our experiments, including the electron spin-resonance spectra. Our results are consistent with a recently observed mechanism for producing shifts of the hyperfine interaction for donors in silicon, which is linear with the hydrostatic component of an applied strain.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [1] ;  [5] ;  [5] ;  [1] ;  [6] ;  [4] ;  [2]
  1. Univ. of New South Wales, Sydney, NSW (Australia). School of Electrical Engineering and Telecommunications
  2. Univ. Paris-Saclay, Commissariat a l'Energie Atomique et aux Energies Alternatives (CEA), Saclay (France). Quantronics Group
  3. Istituto Italiano di Tecnologia (IIT), Rovereto (Italy). Center for Neuroscience and Cognitive Systems; Univ. of St. Andrews, Scotland (United Kingdom). SUPA, School of Physics and Astronomy
  4. Univ. College London (United Kingdom). London Centre for Nanotechnology
  5. Univ. of Grenoble Alpes (France)
  6. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Accelerator Technology and Applies Physics Division
Publication Date:
Grant/Contract Number:
AC02-05CH11231
Type:
Accepted Manuscript
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Volume: 9; Journal Issue: 4; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society (APS)
Research Org:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org:
USDOE Office of Science (SC)
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
OSTI Identifier:
1462970
Alternate Identifier(s):
OSTI ID: 1432585