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Title: Strain-Induced Spin-Resonance Shifts in Silicon Devices

Abstract

In spin-based quantum-information-processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance shifts can be large compared to intrinsic spin linewidths, and it is therefore important to study, understand, and model such effects in order to better predict device performance. We investigate a sample of bismuth donor spins implanted in a silicon chip, on top of which a superconducting aluminum microresonator is fabricated. The on-chip resonator provides two functions: it produces local strain in the silicon due to the larger thermal contraction of the aluminum, and it enables sensitive electron spin-resonance spectroscopy of donors close to the surface that experience this strain. Through finite-element strain simulations, we are able to reconstruct key features of our experiments, including the electron spin-resonance spectra. Our results are consistent with a recently observed mechanism for producing shifts of the hyperfine interaction for donors in silicon, which is linear with the hydrostatic component of an applied strain.

Authors:
 [1];  [2];  [3];  [4];  [1];  [5];  [5];  [1];  [6];  [4];  [2]
+ Show Author Affiliations
  1. Univ. of New South Wales, Sydney, NSW (Australia). School of Electrical Engineering and Telecommunications
  2. Univ. Paris-Saclay, Commissariat a l'Energie Atomique et aux Energies Alternatives (CEA), Saclay (France). Quantronics Group
  3. Istituto Italiano di Tecnologia (IIT), Rovereto (Italy). Center for Neuroscience and Cognitive Systems; Univ. of St. Andrews, Scotland (United Kingdom). SUPA, School of Physics and Astronomy
  4. Univ. College London (United Kingdom). London Centre for Nanotechnology
  5. Univ. of Grenoble Alpes (France)
  6. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Accelerator Technology and Applies Physics Division
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1462970
Alternate Identifier(s):
OSTI ID: 1432585
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Volume: 9; Journal Issue: 4; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS

Citation Formats

Pla, J. J., Bienfait, A., Pica, G., Mansir, J., Mohiyaddin, F. A., Zeng, Z., Niquet, Y. M., Morello, A., Schenkel, T., Morton, J. J. L., and Bertet, P. Strain-Induced Spin-Resonance Shifts in Silicon Devices. United States: N. p., 2018. Web. doi:10.1103/PhysRevApplied.9.044014.
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Pla, J. J., Bienfait, A., Pica, G., Mansir, J., Mohiyaddin, F. A., Zeng, Z., Niquet, Y. M., Morello, A., Schenkel, T., Morton, J. J. L., & Bertet, P. Strain-Induced Spin-Resonance Shifts in Silicon Devices. United States. https://doi.org/10.1103/PhysRevApplied.9.044014
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Pla, J. J., Bienfait, A., Pica, G., Mansir, J., Mohiyaddin, F. A., Zeng, Z., Niquet, Y. M., Morello, A., Schenkel, T., Morton, J. J. L., and Bertet, P. Tue . "Strain-Induced Spin-Resonance Shifts in Silicon Devices". United States. https://doi.org/10.1103/PhysRevApplied.9.044014. https://www.osti.gov/servlets/purl/1462970.
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@article{osti_1462970,
title = {Strain-Induced Spin-Resonance Shifts in Silicon Devices},
author = {Pla, J. J. and Bienfait, A. and Pica, G. and Mansir, J. and Mohiyaddin, F. A. and Zeng, Z. and Niquet, Y. M. and Morello, A. and Schenkel, T. and Morton, J. J. L. and Bertet, P.},
abstractNote = {In spin-based quantum-information-processing devices, the presence of control and detection circuitry can change the local environment of a spin by introducing strain and electric fields, altering its resonant frequencies. These resonance shifts can be large compared to intrinsic spin linewidths, and it is therefore important to study, understand, and model such effects in order to better predict device performance. We investigate a sample of bismuth donor spins implanted in a silicon chip, on top of which a superconducting aluminum microresonator is fabricated. The on-chip resonator provides two functions: it produces local strain in the silicon due to the larger thermal contraction of the aluminum, and it enables sensitive electron spin-resonance spectroscopy of donors close to the surface that experience this strain. Through finite-element strain simulations, we are able to reconstruct key features of our experiments, including the electron spin-resonance spectra. Our results are consistent with a recently observed mechanism for producing shifts of the hyperfine interaction for donors in silicon, which is linear with the hydrostatic component of an applied strain.},
doi = {10.1103/PhysRevApplied.9.044014},
journal = {Physical Review Applied},
number = 4,
volume = 9,
place = {United States},
year = {Tue Apr 10 00:00:00 EDT 2018},
month = {Tue Apr 10 00:00:00 EDT 2018}
}
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https://doi.org/10.1103/PhysRevApplied.9.044014
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Works referenced in this record:

Storing quantum information for 30 seconds in a nanoelectronic device
journal, October 2014

  • Muhonen, Juha T.; Dehollain, Juan P.; Laucht, Arne
  • Nature Nanotechnology, Vol. 9, Issue 12
  • DOI: 10.1038/nnano.2014.211

Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28
journal, April 2012

  • Weis, C. D.; Lo, C. C.; Lang, V.
  • Applied Physics Letters, Vol. 100, Issue 17
  • DOI: 10.1063/1.4704561

A silicon-based nuclear spin quantum computer
journal, May 1998

A single-atom electron spin qubit in silicon
journal, September 2012

  • Pla, Jarryd J.; Tan, Kuan Y.; Dehollain, Juan P.
  • Nature, Vol. 489, Issue 7417
  • DOI: 10.1038/nature11449

Gate-Defined Quantum Dots in Intrinsic Silicon
journal, July 2007

  • Angus, Susan J.; Ferguson, Andrew J.; Dzurak, Andrew S.
  • Nano Letters, Vol. 7, Issue 7
  • DOI: 10.1021/nl070949k

Quantum Computing with an Electron Spin Ensemble
journal, August 2009

Magnetic Resonance with Squeezed Microwaves
journal, October 2017

Electroelastic Hyperfine Tuning of Phosphorus Donors in Silicon
journal, January 2011

Inductive-detection electron-spin resonance spectroscopy with 65 spins/ Hz sensitivity
journal, November 2017

  • Probst, S.; Bienfait, A.; Campagne-Ibarcq, P.
  • Applied Physics Letters, Vol. 111, Issue 20
  • DOI: 10.1063/1.5002540

Stark Tuning of Donor Electron Spins in Silicon
journal, October 2006

Multimode Storage and Retrieval of Microwave Fields in a Spin Ensemble
journal, June 2014

On the thermal expansion coefficients of thin films
journal, September 2000

Noninvasive Spatial Metrology of Single-Atom Devices
journal, April 2013

  • Mohiyaddin, Fahd A.; Rahman, Rajib; Kalra, Rachpon
  • Nano Letters, Vol. 13, Issue 5
  • DOI: 10.1021/nl303863s

A single-atom transistor
journal, February 2012

  • Fuechsle, Martin; Miwa, Jill A.; Mahapatra, Suddhasatta
  • Nature Nanotechnology, Vol. 7, Issue 4
  • DOI: 10.1038/nnano.2012.21

Hybrid Quantum Circuit with a Superconducting Qubit Coupled to a Spin Ensemble
journal, November 2011

Reaching the quantum limit of sensitivity in electron spin resonance
journal, December 2015

Addressing spin transitions on Bi 209 donors in silicon using circularly polarized microwaves
journal, March 2016

A single-atom quantum memory in silicon
journal, March 2017

  • Freer, Solomon; Simmons, Stephanie; Laucht, Arne
  • Quantum Science and Technology, Vol. 2, Issue 1
  • DOI: 10.1088/2058-9565/aa63a4

Thin Ohmic or superconducting strip with an applied ac electric current
journal, March 2006

Electrically controlling single-spin qubits in a continuous microwave field
journal, April 2015

  • Laucht, Arne; Muhonen, Juha T.; Mohiyaddin, Fahd A.
  • Science Advances, Vol. 1, Issue 3
  • DOI: 10.1126/sciadv.1500022

Electron spin coherence exceeding seconds in high-purity silicon
journal, December 2011

  • Tyryshkin, Alexei M.; Tojo, Shinichi; Morton, John J. L.
  • Nature Materials, Vol. 11, Issue 2
  • DOI: 10.1038/nmat3182

Hybrid optical–electrical detection of donor electron spins with bound excitons in silicon
journal, March 2015

  • Lo, C. C.; Urdampilleta, M.; Ross, P.
  • Nature Materials, Vol. 14, Issue 5
  • DOI: 10.1038/nmat4250

Bismuth Qubits in Silicon: The Role of EPR Cancellation Resonances
journal, August 2010

Room-Temperature Quantum Bit Storage Exceeding 39 Minutes Using Ionized Donors in Silicon-28
journal, November 2013

Thermally-induced stresses in thin aluminum layers grown on silicon
journal, March 2004

  • Eiper, E.; Resel, R.; Eisenmenger-Sittner, C.
  • Powder Diffraction, Vol. 19, Issue 1
  • DOI: 10.1154/1.1649326

What is the Young's Modulus of Silicon?
journal, April 2010

  • Hopcroft, Matthew A.; Nix, William D.; Kenny, Thomas W.
  • Journal of Microelectromechanical Systems, Vol. 19, Issue 2
  • DOI: 10.1109/JMEMS.2009.2039697

The electric field gradient in noncubic metals
journal, January 1979

Electronic properties of two-dimensional systems
journal, April 1982

Recommended Values for the Thermal Expansivity of Silicon from 0 to 1000 K
journal, April 1983

  • Swenson, C. A.
  • Journal of Physical and Chemical Reference Data, Vol. 12, Issue 2
  • DOI: 10.1063/1.555681

Angle-Dependent Microresonator ESR Characterization of Locally Doped Gd 3 + : Al 2 O 3
journal, August 2016

Electron spin lifetime of a single antimony donor in silicon
journal, September 2013

  • Tracy, L. A.; Lu, T. M.; Bishop, N. C.
  • Applied Physics Letters, Vol. 103, Issue 14
  • DOI: 10.1063/1.4824128

Quadrupolar effects on nuclear spins of neutral arsenic donors in silicon
journal, April 2016

  • Franke, David P.; Pflüger, Moritz P. D.; Mortemousque, Pierre-André
  • Physical Review B, Vol. 93, Issue 16
  • DOI: 10.1103/PhysRevB.93.161303

High-fidelity readout and control of a nuclear spin qubit in silicon
journal, April 2013

  • Pla, Jarryd J.; Tan, Kuan Y.; Dehollain, Juan P.
  • Nature, Vol. 496, Issue 7445
  • DOI: 10.1038/nature12011

The Thermal Expansion of Pure Metals: Copper, Gold, Aluminum, Nickel, and Iron
journal, October 1941

Controlling spin relaxation with a cavity
journal, February 2016

Quantum Memory for Microwave Photons in an Inhomogeneously Broadened Spin Ensemble
journal, June 2013

Hyperfine Stark effect of shallow donors in silicon
journal, November 2014

Atomic clock transitions in silicon-based spin qubits
journal, June 2013

  • Wolfowicz, Gary; Tyryshkin, Alexei M.; George, Richard E.
  • Nature Nanotechnology, Vol. 8, Issue 8
  • DOI: 10.1038/nnano.2013.117

Theory of Donor States in Silicon
journal, May 1955

Quadrupole shift of nuclear magnetic resonance of donors in silicon at low magnetic field
journal, November 2016

Metal-semiconductor contacts
journal, January 1982

Interaction of Strain and Nuclear Spins in Silicon: Quadrupolar Effects on Ionized Donors
journal, July 2015

Formation of strain-induced quantum dots in gated semiconductor nanostructures
journal, August 2015

  • Thorbeck, Ted; Zimmerman, Neil M.
  • AIP Advances, Vol. 5, Issue 8
  • DOI: 10.1063/1.4928320

Single shot spin readout using a cryogenic high-electron-mobility transistor amplifier at sub-Kelvin temperatures
journal, February 2016

  • Tracy, L. A.; Luhman, D. R.; Carr, S. M.
  • Applied Physics Letters, Vol. 108, Issue 6
  • DOI: 10.1063/1.4941421

Stark Tuning of Donor Electron Spins in Silicon
conference, January 2007

  • Bradbury, F. R.; Tyryshkin, Alexei M.; Sabouret, Guillaume
  • PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006, AIP Conference Proceedings
  • DOI: 10.1063/1.2730277

Spin Echoes
journal, December 1950

Atomic clock transitions in silicon-based spin qubits
text, January 2013

High-fidelity readout and control of a nuclear spin qubit in silicon
text, January 2013

A single-atom electron spin qubit in silicon
text, January 2013

Storing quantum information for 30 seconds in a nanoelectronic device
text, January 2014

Formation of Strain-Induced Quantum Dots in Gated Semiconductor Nanostructures
preprint, January 2014

Interaction of Strain and Nuclear Spins in Silicon: Quadrupolar Effects on Ionized Donors
text, January 2015

Quadrupole Shift of Nuclear Magnetic Resonance of Donors in Silicon at Low Magnetic Field
text, January 2015

A single-atom quantum memory in silicon
preprint, January 2016

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    Works referencing / citing this record:

    Deep level transient spectroscopy study of heavy ion implantation induced defects in silicon
    journal, September 2018

    • Lew, C. T. -K.; Johnson, B. C.; McCallum, J. C.
    • Journal of Applied Physics, Vol. 124, Issue 12
    • DOI: 10.1063/1.5047534

    Influence of uniaxial stress on phonon-assisted relaxation in bismuth-doped silicon
    journal, January 2020

    • Zhukavin, R. Kh.; Pavlov, S. G.; Stavrias, N.
    • Journal of Applied Physics, Vol. 127, Issue 3
    • DOI: 10.1063/1.5134691

    Controlling Spin-Orbit Interactions in Silicon Quantum Dots Using Magnetic Field Direction
    journal, May 2019

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