Electrical properties of CdS/Cu(In,Ga)Se2 interface

Li, Jian V.; Mansfield, Lorelle M.; Egaas, Brian; Ramanathan, Kannan

doi:10.7567/JJAP.57.085701

Title: Electrical properties of CdS/Cu(In,Ga)Se₂ interface

Full Record
Other Related Research

Abstract

We present an experimental method to measure and extract the interface density of states and fixed charge at the CdS/Cu(In,Ga)Se₂ (CIGS) interface using the capacitance-voltage technique applied to a metal-insulator-semiconductor structure. The density of interface states is on the order of 10¹⁰ to 10¹³ cm^-2 eV^-1. The effective fixed charge at the interface is (7.8 +/- 0.3) x 10¹¹ cm^-2 and due to positive charges. These electrical properties make the CdS/CIGS interface well passivated and to some extent resemble the SiN _x /p-Si interface. We also measure the inversion strength (i.e., Fermi level at the interface) and capture cross-section of interface states from admittance spectroscopy. Inputting the above extracted parameters into the extended Shockley-Read-Hall recombination formulation by Eades and Swanson [J. Appl. Phys. 58, 4267 (1985)], we calculate the surface recombination velocity of mid-to-high 103 cmcenterdots-1, which agrees reasonably with temperature-intensity dependent recombination analysis.

Authors:

Li, Jian V. ^[1]; Mansfield, Lorelle M. ^[2]; Egaas, Brian ^[2]; Ramanathan, Kannan ^[2]

National Cheng Kung Univ., Tainan City (Taiwan)
National Renewable Energy Lab. (NREL), Golden, CO (United States)

Publication Date:: Wed Jun 27 00:00:00 EDT 2018

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States); Texas State Univ., San Marcos, TX (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

OSTI Identifier:: 1462332

Alternate Identifier(s):: OSTI ID: 1580433

Report Number(s):: NREL/JA-5K00-72040
Journal ID: ISSN 0021-4922

Grant/Contract Number:: AC36-08GO28308; EE0007541

Resource Type:: Accepted Manuscript

Journal Name:: Japanese Journal of Applied Physics

Additional Journal Information:: Journal Volume: 57; Journal Issue: 8; Journal ID: ISSN 0021-4922

Publisher:: Japan Society of Applied Physics

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; electrical properties; interface density; semiconductor structure

Citation Formats


                    Li, Jian V., Mansfield, Lorelle M., Egaas, Brian, and Ramanathan, Kannan. Electrical properties of CdS/Cu(In,Ga)Se2 interface.  United States: N. p., 2018. 
Web.  doi:10.7567/JJAP.57.085701.

Copy to clipboard


                    Li, Jian V., Mansfield, Lorelle M., Egaas, Brian, & Ramanathan, Kannan. Electrical properties of CdS/Cu(In,Ga)Se2 interface.  United States.  https://doi.org/10.7567/JJAP.57.085701

Copy to clipboard


                    Li, Jian V., Mansfield, Lorelle M., Egaas, Brian, and Ramanathan, Kannan. Wed .  
"Electrical properties of CdS/Cu(In,Ga)Se2 interface".  United States.  https://doi.org/10.7567/JJAP.57.085701.  https://www.osti.gov/servlets/purl/1462332.

Copy to clipboard


                    
@article{osti_1462332,

  title        = {Electrical properties of CdS/Cu(In,Ga)Se2 interface},

  author       = {Li, Jian V. and Mansfield, Lorelle M. and Egaas, Brian and Ramanathan, Kannan},

  abstractNote = {We present an experimental method to measure and extract the interface density of states and fixed charge at the CdS/Cu(In,Ga)Se2 (CIGS) interface using the capacitance-voltage technique applied to a metal-insulator-semiconductor structure. The density of interface states is on the order of 1010 to 1013 cm-2 eV-1. The effective fixed charge at the interface is (7.8 +/- 0.3) x 1011 cm-2 and due to positive charges. These electrical properties make the CdS/CIGS interface well passivated and to some extent resemble the SiN x /p-Si interface. We also measure the inversion strength (i.e., Fermi level at the interface) and capture cross-section of interface states from admittance spectroscopy. Inputting the above extracted parameters into the extended Shockley-Read-Hall recombination formulation by Eades and Swanson [J. Appl. Phys. 58, 4267 (1985)], we calculate the surface recombination velocity of mid-to-high 103 cmcenterdots-1, which agrees reasonably with temperature-intensity dependent recombination analysis.},

  doi          = {10.7567/JJAP.57.085701},

  journal      = {Japanese Journal of Applied Physics},

  number       = 8,

  volume       = 57,

  place        = {United States},

  year         = {Wed Jun 27 00:00:00 EDT 2018},

  month        = {Wed Jun 27 00:00:00 EDT 2018}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (DOE)

Publisher's Version of Record

https://doi.org/10.7567/JJAP.57.085701

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 2 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE PAGES and OSTI.GOV collections:

Study of charge transport properties in a ZnO/CdS/Cu(In,Ga)Se₂ solar cell via admittance spectroscopy

Journal Article Paul, Sanjoy ; Lopez, Roberto ; Repins, Ingrid L. ; ... - Journal of Vacuum Science and Technology B

We investigate the charge carrier transport properties in a thin-film heterojunction Cu(In,Ga)Se2 (CIGS) solar cell device via coordinated capacitance-voltage and admittance spectroscopic measurements. The CIGS absorber width was measured using temperature dependent depletion width in the freeze-out regime and its acceptor density extracted from conventional capacitance-voltage analysis in the non-freeze-out regime. The bias-dependent modified dielectric relaxation in the Cu(In,Ga)Se2 solar cell was exploited to extract the absorber’s resistivity, hole mobility, and their temperature dependency, all by admittance spectroscopy. In the temperature range of 133 – 300 K, the extracted hole mobility in the CIGS device increases from 7.55 × 10-3more »« less
Cited by 13
https://doi.org/10.1116/1.5013046

Full Text Available
Investigating the electronic properties of Al{sub 2}O{sub 3}/Cu(In,Ga)Se{sub 2} interface

Journal Article Kotipalli, R., E-mail: raja.kotipalli@uclouvain.be ; Rajkumar, R. ; Flandre, D. ; ... - AIP Advances

Atomic layer deposited (ALD) Al{sub 2}O{sub 3} films on Cu(In,Ga)Se{sub 2} (CIGS) surfaces have been demonstrated to exhibit excellent surface passivation properties, which is advantageous in reducing recombination losses at the rear metal contact of CIGS thin-film solar cells. Here, we report, for the first time, experimentally extracted electronic parameters, i.e. fixed charge density (Q{sub f}) and interface-trap charge density (D{sub it}), for as-deposited (AD) and post-deposition annealed (PDA) ALD Al{sub 2}O{sub 3} films on CIGS surfaces using capacitance–voltage (C-V) and conductance-frequency (G-f) measurements. These results indicate that the AD films exhibit positive fixed charges Q{sub f} (approximately 10{sup 12}more »« less
https://doi.org/10.1063/1.4932512
Impact of K-Optimization on Trap Concentration in (Ag,Cu)(In,Ga)Se₂ Solar Cells

Conference Miller, Michael F ; Li, Siming ; Kuciauskas, Darius ; ...

Recent progress has been made in improving efficiency in Cu(In,Ga)Se₂ (CIGS) absorbers with steady increases in peak efficiency. One way this has been achieved is by adding Ag to CIGS (ACIGS) to achieve higher V_OC. However, these efficiencies are still well below the Shockley-Queisser efficiency limit, and traps acting as recombination centers and compensating centers are one thing limiting the solar efficiency. Past research in CIGS has shown that alkali treatment can improve the efficiency and metastability problems in CIGS, but less is understood about the role of alkali treatments in ACIGS. Here, we investigate the impact of potassium inmore »« less
https://doi.org/10.2172/1807858

Full Text Available
Reducing interface recombination for Cu(In,Ga)Se₂ by atomic layer deposited buffer layers

Journal Article Hultqvist, Adam ; Li, Jian V. ; Kuciauskas, Darius ; ... - Applied Physics Letters

Partial CuInGaSe₂ (CIGS) solar cell stacks with different atomic layer deposited buffer layers and pretreatments were analyzed by photoluminescence (PL) and capacitance voltage (CV) measurements to investigate the buffer layer/CIGS interface. Atomic layer deposited ZnS, ZnO, and SnO_x buffer layers were compared with chemical bath deposited CdS buffer layers. Band bending, charge density, and interface state density were extracted from the CV measurement using an analysis technique new to CIGS. The surface recombination velocity calculated from the density of interface traps for a ZnS/CIGS stack shows a remarkably low value of 810 cm/s, approaching the range of single crystalline II–VImore »« less
Cited by 17
https://doi.org/10.1063/1.4927096

Full Text Available
Electrical and optical characterization of CdTe solar cells with CdS and CdSe buffers—A comparative study

Journal Article Mia, Md Dalim ; Swartz, Craig H. ; Paul, Sanjoy ; ... - Journal of Vacuum Science and Technology B

A study is reported comparing the electrical and optical properties of CdTe solar cells, prepared using CdS and CdSe buffer layers, to investigate defects in the bulk and interface, carrier transport, and recombination. Temperature dependent capacitance-voltage measurement and admittance spectroscopy were used to extract carrier concentration, resistivity, charge carrier mobility, and their temperature dependence. We identify the presence of two defect signatures corresponding to carrier freeze-out and the formation of a Schottky back-contact barrier. The back-contact barrier height (≈ 300 meV) extracted from the temperature dependent current density-voltage (JVT) experiment was confirmed by conventional admittance spectroscopy. The activation energies ofmore »« less
Cited by 17
https://doi.org/10.1116/1.5044219

Full Text Available

Similar Records

Title: Electrical properties of CdS/Cu(In,Ga)Se2 interface

Abstract

Citation Formats

Title: Electrical properties of CdS/Cu(In,Ga)Se₂ interface