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Title: Electrical properties of CdS/Cu(In,Ga)Se 2 interface

Abstract

We present an experimental method to measure and extract the interface density of states and fixed charge at the CdS/Cu(In,Ga)Se 2 (CIGS) interface using the capacitance-voltage technique applied to a metal-insulator-semiconductor structure. The density of interface states is on the order of 10 10 to 10 13 cm -2 eV -1. The effective fixed charge at the interface is (7.8 +/- 0.3) x 10 11 cm -2 and due to positive charges. These electrical properties make the CdS/CIGS interface well passivated and to some extent resemble the SiN x /p-Si interface. We also measure the inversion strength (i.e., Fermi level at the interface) and capture cross-section of interface states from admittance spectroscopy. Inputting the above extracted parameters into the extended Shockley-Read-Hall recombination formulation by Eades and Swanson [J. Appl. Phys. 58, 4267 (1985)], we calculate the surface recombination velocity of mid-to-high 103 cmcenterdots-1, which agrees reasonably with temperature-intensity dependent recombination analysis.

Authors:
 [1];  [2];  [2];  [2]
  1. National Cheng Kung Univ., Tainan City (Taiwan)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1462332
Report Number(s):
NREL/JA-5K00-72040
Journal ID: ISSN 0021-4922
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Accepted Manuscript
Journal Name:
Japanese Journal of Applied Physics
Additional Journal Information:
Journal Volume: 57; Journal Issue: 8; Journal ID: ISSN 0021-4922
Publisher:
Japan Society of Applied Physics
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; electrical properties; interface density; semiconductor structure

Citation Formats

Li, Jian V., Mansfield, Lorelle M., Egaas, Brian, and Ramanathan, Kannan. Electrical properties of CdS/Cu(In,Ga)Se2 interface. United States: N. p., 2018. Web. doi:10.7567/JJAP.57.085701.
Li, Jian V., Mansfield, Lorelle M., Egaas, Brian, & Ramanathan, Kannan. Electrical properties of CdS/Cu(In,Ga)Se2 interface. United States. doi:10.7567/JJAP.57.085701.
Li, Jian V., Mansfield, Lorelle M., Egaas, Brian, and Ramanathan, Kannan. Wed . "Electrical properties of CdS/Cu(In,Ga)Se2 interface". United States. doi:10.7567/JJAP.57.085701. https://www.osti.gov/servlets/purl/1462332.
@article{osti_1462332,
title = {Electrical properties of CdS/Cu(In,Ga)Se2 interface},
author = {Li, Jian V. and Mansfield, Lorelle M. and Egaas, Brian and Ramanathan, Kannan},
abstractNote = {We present an experimental method to measure and extract the interface density of states and fixed charge at the CdS/Cu(In,Ga)Se2 (CIGS) interface using the capacitance-voltage technique applied to a metal-insulator-semiconductor structure. The density of interface states is on the order of 1010 to 1013 cm-2 eV-1. The effective fixed charge at the interface is (7.8 +/- 0.3) x 1011 cm-2 and due to positive charges. These electrical properties make the CdS/CIGS interface well passivated and to some extent resemble the SiN x /p-Si interface. We also measure the inversion strength (i.e., Fermi level at the interface) and capture cross-section of interface states from admittance spectroscopy. Inputting the above extracted parameters into the extended Shockley-Read-Hall recombination formulation by Eades and Swanson [J. Appl. Phys. 58, 4267 (1985)], we calculate the surface recombination velocity of mid-to-high 103 cmcenterdots-1, which agrees reasonably with temperature-intensity dependent recombination analysis.},
doi = {10.7567/JJAP.57.085701},
journal = {Japanese Journal of Applied Physics},
number = 8,
volume = 57,
place = {United States},
year = {2018},
month = {6}
}

Journal Article:
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