skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Shock-induced amorphization in silicon carbide

Abstract

While silicon carbide (SiC) has been predicted to undergo pressure-induced amorphization, the microstructural evidence of such a drastic phase change is absent as its brittleness usually prevents its successful recovery from high-pressure experiments. In this paper we report on the observation of amorphous SiC recovered from laser-ablation-driven shock compression with a peak stress of approximately 50 GPa. Transmission electron microscopy reveals that the amorphous regions are extremely localized, forming bands as narrow as a few nanometers. In addition to these amorphous bands, planar stacking faults are observed. Large-scale non-equilibrium molecular dynamic simulations elucidate the process and suggest that the planar stacking faults serve as the precursors to amorphization. Finally, our results suggest that the amorphous phase produced is a high-density form, which enhances its thermodynamical stability under the high pressures combined with the shear stresses generated by the uniaxial strain state in shock compression.

Authors:
 [1];  [1];  [2];  [1];  [3];  [3];  [3];  [4]; ORCiD logo [1]
+ Show Author Affiliations
  1. Univ. of California, San Diego, CA (United States)
  2. Univ. of California, San Diego, CA (United States); Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  3. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Univ. of California, San Diego, CA (United States); Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); Univ. of California (United States)
OSTI Identifier:
1462276
Alternate Identifier(s):
OSTI ID: 1479061; OSTI ID: 1484982; OSTI ID: 1496409
Report Number(s):
LLNL-JRNL-754814
Journal ID: ISSN 1359-6454; PII: S1359645418305834
Grant/Contract Number:  
NA0002930; FG52-09NA29043; AC52-07NA27344; 09-LR-06-118456-MEYM; LFR-17-449059; AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Acta Materialia
Additional Journal Information:
Journal Volume: 158; Journal ID: ISSN 1359-6454
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; silicon carbide; amorphization; laser shock compression; Lasers

Citation Formats

Zhao, S., Flanagan, R., Hahn, E. N., Kad, B., Remington, B. A., Wehrenberg, C. E., Cauble, R., More, K., and Meyers, M. A. Shock-induced amorphization in silicon carbide. United States: N. p., 2018. Web. doi:10.1016/j.actamat.2018.07.047.
Copy to clipboard
Zhao, S., Flanagan, R., Hahn, E. N., Kad, B., Remington, B. A., Wehrenberg, C. E., Cauble, R., More, K., & Meyers, M. A. Shock-induced amorphization in silicon carbide. United States. doi:10.1016/j.actamat.2018.07.047.
Copy to clipboard
Zhao, S., Flanagan, R., Hahn, E. N., Kad, B., Remington, B. A., Wehrenberg, C. E., Cauble, R., More, K., and Meyers, M. A. Mon . "Shock-induced amorphization in silicon carbide". United States. doi:10.1016/j.actamat.2018.07.047. https://www.osti.gov/servlets/purl/1462276.
Copy to clipboard
@article{osti_1462276,
title = {Shock-induced amorphization in silicon carbide},
author = {Zhao, S. and Flanagan, R. and Hahn, E. N. and Kad, B. and Remington, B. A. and Wehrenberg, C. E. and Cauble, R. and More, K. and Meyers, M. A.},
abstractNote = {While silicon carbide (SiC) has been predicted to undergo pressure-induced amorphization, the microstructural evidence of such a drastic phase change is absent as its brittleness usually prevents its successful recovery from high-pressure experiments. In this paper we report on the observation of amorphous SiC recovered from laser-ablation-driven shock compression with a peak stress of approximately 50 GPa. Transmission electron microscopy reveals that the amorphous regions are extremely localized, forming bands as narrow as a few nanometers. In addition to these amorphous bands, planar stacking faults are observed. Large-scale non-equilibrium molecular dynamic simulations elucidate the process and suggest that the planar stacking faults serve as the precursors to amorphization. Finally, our results suggest that the amorphous phase produced is a high-density form, which enhances its thermodynamical stability under the high pressures combined with the shear stresses generated by the uniaxial strain state in shock compression.},
doi = {10.1016/j.actamat.2018.07.047},
journal = {Acta Materialia},
number = ,
volume = 158,
place = {United States},
year = {2018},
month = {7}
}
Copy to clipboard
Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI:  10.1016/j.actamat.2018.07.047
Copyright Statement
Other availability
Search WorldCat Search WorldCat to find libraries that may hold this journal
Citation Metrics:
Cited by: 5 works
Citation information provided by
Web of Science
Save / Share:
Export Metadata
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.

Similar Records in DOE PAGES and OSTI.GOV collections: