Characterization of free-standing InAs quantum membranes by standing wave hard x-ray photoemission spectroscopy

Conti, G.; Nemsak, S.; Kuo, C. -T.; Gehlmann, M.; Conlon, C.; Keqi, A.; Rattanachata, A.; Karslioglu, O.; Mueller, J.; Sethian, J.; Bluhm, H.; Rault, J. E.; Rueff, J. P.; Fang, H.; Javey, A.; Fadley, C. S.

doi:10.1063/1.5022379

Title: Characterization of free-standing InAs quantum membranes by standing wave hard x-ray photoemission spectroscopy

Journal Article · 06 April 2018 · APL Materials

DOI: https://doi.org/10.1063/1.5022379 · OSTI ID:1461989

^[1]; Nemsak, S. ^[2];

^[1]; Gehlmann, M. ^[3]; Conlon, C. ^[1]; Keqi, A. ^[1]; Rattanachata, A. ^[1];

^[4]; Mueller, J. ^[5]; Sethian, J. ^[6]; Bluhm, H. ^[7]; Rault, J. E. ^[8];

^[9]; Fang, H. ^[10]; Javey, A. ^[11]; Fadley, C. S. ^[1]

Univ. of California, Davis, CA (United States). Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
Univ. of California, Davis, CA (United States). Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division. Advanced Light Source; Forschungszentrum Julich (Germany). Peter Grünberg Inst. PGI-6
Univ. of California, Davis, CA (United States). Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Forschungszentrum Julich (Germany). Peter Grünberg Inst. PGI-6
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Chemical Sciences Division
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Center for Computational Sciences and Engineering
Univ. of California, Berkeley, CA (United States). Dept. of Mathematics
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source. Chemical Sciences Division
Synchrotron-SOLEIL, Saint-Aubin (France)
Synchrotron-SOLEIL, Saint-Aubin (France); National Centre for Scientific Research (CNRS) and Sorbonne Univ., Paris (France). Lab. of Physical Chemistry - Matter and Radiation (LCPMR)
Northeastern Univ., Boston, MA (United States). Dept. of Electrical and Computer Engineering
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Univ. of California, Berkeley, CA (United States). Electrical Engineering and Computer Sciences

Free-standing nanoribbons of InAs quantum membranes (QMs) transferred onto a (Si/Mo) multilayer mirror substrate are characterized by hard x-ray photoemission spectroscopy (HXPS) and by standing-wave HXPS (SW-HXPS). Information on the chemical composition and on the chemical states of the elements within the nanoribbons was obtained by HXPS and on the quantitative depth profiles by SW-HXPS. By comparing the experimental SW-HXPS rocking curves to x-ray optical calculations, the chemical depth profile of the InAs(QM) and its interfaces were quantitatively derived with ångström precision. We determined that (i) the exposure to air induced the formation of an InAsO₄ layer on top of the stoichiometric InAs(QM); (ii) the top interface between the air-side InAsO₄ and the InAs(QM) is not sharp, indicating that interdiffusion occurs between these two layers; (iii) the bottom interface between the InAs(QM) and the native oxide SiO₂ on top of the (Si/Mo) substrate is abrupt. In addition, the valence band offset (VBO) between the InAs(QM) and the SiO₂/(Si/Mo) substrate was determined by HXPS. The value of VBO = 0.2 ± 0.04 eV is in good agreement with literature results obtained by electrical characterization, giving a clear indication of the formation of a well-defined and abrupt InAs/SiO₂ heterojunction. We have demonstrated that HXPS and SW-HXPS are non-destructive, powerful methods for characterizing interfaces and for providing chemical depth profiles of nanostructures, quantum membranes, and 2D layered materials.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: LBNL Laboratory Directed Research and Development (LDRD) Program; National Research Agency (ANR) (France); USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC02-05CH11231; SC0014697

OSTI ID:: 1461989

Journal Information:: APL Materials, Journal Name: APL Materials Journal Issue: 5 Vol. 6; ISSN 2166-532X

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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