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Title: Frequency dependent polarisation switching in h-ErMnO 3

We report an electric-field poling study of the geometrically-driven improper ferroelectric h-ErMnO 3. From a detailed dielectric analysis, we deduce the temperature and the frequency dependent range for which single-crystalline h-ErMnO 3 exhibits purely intrinsic dielectric behaviour, i.e., free from the extrinsic so-called Maxwell-Wagner polarisations that arise, for example, from surface barrier layers. In this regime, ferroelectric hysteresis loops as a function of frequency, temperature, and applied electric fields are measured, revealing the theoretically predicted saturation polarisation on the order of 5–6 μC/cm 2. Special emphasis is put on frequency dependent polarisation switching, which is explained in terms of domain-wall movement similar to proper ferroelectrics. Controlling the domain walls via electric fields brings us an important step closer to their utilization in domain-wall-based electronics.
Authors:
 [1] ;  [1] ; ORCiD logo [1] ;  [2] ;  [2] ;  [3] ; ORCiD logo [4] ; ORCiD logo [5] ;  [6] ;  [6] ; ORCiD logo [1]
  1. Univ. of Augsburg (Germany). Experimental Physics V. Center for Electronic Correlation and Magnetism
  2. Swiss Federal Inst. of Technology in Zurich (ETH Zurich) (Switzerland). Dept. of Materials
  3. Swiss Federal Inst. of Technology in Zurich (ETH Zurich) (Switzerland). Dept. of Materials; Univ. Grenoble Alpes (France). Inst. Néel
  4. Swiss Federal Inst. of Technology in Zurich (ETH Zurich) (Switzerland). Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
  5. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
  6. Norwegian Univ. of Science and Technology, Trondheim (Norway). Dept. of Materials Science and Engineering
Publication Date:
Grant/Contract Number:
AC02-05CH11231; ENREKON 03EK3015; 694955; 20021_149192; H2020-MSCA-IF-2014; 655866
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 18; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Univ. of Augsburg (Germany); Swiss Federal Inst. of Technology in Zurich (ETH Zurich) (Switzerland); Norwegian Univ. of Science and Technology, Trondheim (Norway)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); German Research Foundation (DFG); German Federal Ministry of Education and Research (BMBF); European Research Council (ERC); Swiss National Science Foundation (SNSF); European Commission (EC)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; dielectrics; microscopy; spectroscopy; multiferroics; ferroelectric materials; semiconductors; magnetic materials
OSTI Identifier:
1461985
Alternate Identifier(s):
OSTI ID: 1435863