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Title: Assessing failure in epitaxially encapsulated micro-scale sensors using micro and nano x-ray computed tomography

Abstract

Millions of micro electro mechanical system sensors are fabricated each year using an ultra-clean process that allows for a vacuum-encapsulated cavity. These devices have a multi-layer structure that contains hidden layers with highly doped silicon, which makes common imaging techniques ineffective. Thus, examining device features post-fabrication, and testing, is a significant challenge. Here in this paper, we use a combination of micro- and nano-scale x-ray computed tomography to study device features and assess failure mechanisms in such devices without destroying the ultra-clean cavity. This provides a unique opportunity to examine surfaces and trace failure mechanisms to specific steps in the fabrication process.

Authors:
ORCiD logo [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Stanford Univ., CA (United States). Dept. of Mechanical Engineering
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); Defense Advanced Research Projects Agency (DARPA)
OSTI Identifier:
1461954
Grant/Contract Number:  
[AC02-76SF00515; N66001-12-1-4260; ECS-9731293]
Resource Type:
Accepted Manuscript
Journal Name:
MRS Communications
Additional Journal Information:
[ Journal Volume: 8; Journal Issue: 02]; Journal ID: ISSN 2159-6859
Publisher:
Materials Research Society - Cambridge University Press
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING

Citation Formats

Comenencia Ortiz, Lizmarie, Heinz, David B., Flader, Ian B., Alter, Anne L., Shin, Dongsuk D., Chen, Yunhan, and Kenny, Thomas W. Assessing failure in epitaxially encapsulated micro-scale sensors using micro and nano x-ray computed tomography. United States: N. p., 2018. Web. doi:10.1557/mrc.2018.70.
Comenencia Ortiz, Lizmarie, Heinz, David B., Flader, Ian B., Alter, Anne L., Shin, Dongsuk D., Chen, Yunhan, & Kenny, Thomas W. Assessing failure in epitaxially encapsulated micro-scale sensors using micro and nano x-ray computed tomography. United States. doi:10.1557/mrc.2018.70.
Comenencia Ortiz, Lizmarie, Heinz, David B., Flader, Ian B., Alter, Anne L., Shin, Dongsuk D., Chen, Yunhan, and Kenny, Thomas W. Thu . "Assessing failure in epitaxially encapsulated micro-scale sensors using micro and nano x-ray computed tomography". United States. doi:10.1557/mrc.2018.70. https://www.osti.gov/servlets/purl/1461954.
@article{osti_1461954,
title = {Assessing failure in epitaxially encapsulated micro-scale sensors using micro and nano x-ray computed tomography},
author = {Comenencia Ortiz, Lizmarie and Heinz, David B. and Flader, Ian B. and Alter, Anne L. and Shin, Dongsuk D. and Chen, Yunhan and Kenny, Thomas W.},
abstractNote = {Millions of micro electro mechanical system sensors are fabricated each year using an ultra-clean process that allows for a vacuum-encapsulated cavity. These devices have a multi-layer structure that contains hidden layers with highly doped silicon, which makes common imaging techniques ineffective. Thus, examining device features post-fabrication, and testing, is a significant challenge. Here in this paper, we use a combination of micro- and nano-scale x-ray computed tomography to study device features and assess failure mechanisms in such devices without destroying the ultra-clean cavity. This provides a unique opportunity to examine surfaces and trace failure mechanisms to specific steps in the fabrication process.},
doi = {10.1557/mrc.2018.70},
journal = {MRS Communications},
number = [02],
volume = [8],
place = {United States},
year = {2018},
month = {4}
}

Journal Article:
Free Publicly Available Full Text
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Citation Metrics:
Cited by: 1 work
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Figures / Tables:

Figure 1 Figure 1: Schematic representation of devices and current imaging techniques used to assess vacuum-sealed structures: (a) schematic representation of cross-section of a die fabricated with the vacuum-sealed encapsulation process, (b) SEM image of cross section of a resonant accelerometer, (c) IR image of an accelerometer with micro-tether.

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