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Title: Electronic structure of exfoliated and epitaxial hexagonal boron nitride

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USDOE Office of Science (SC), Basic Energy Sciences (BES)
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Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Name: Physical Review Materials Journal Volume: 2 Journal Issue: 7; Journal ID: ISSN 2475-9953
American Physical Society
Country of Publication:
United States

Citation Formats

Koch, Roland J., Katoch, Jyoti, Moser, Simon, Schwarz, Daniel, Kawakami, Roland K., Bostwick, Aaron, Rotenberg, Eli, Jozwiak, Chris, and Ulstrup, Søren. Electronic structure of exfoliated and epitaxial hexagonal boron nitride. United States: N. p., 2018. Web. doi:10.1103/PhysRevMaterials.2.074006.
Koch, Roland J., Katoch, Jyoti, Moser, Simon, Schwarz, Daniel, Kawakami, Roland K., Bostwick, Aaron, Rotenberg, Eli, Jozwiak, Chris, & Ulstrup, Søren. Electronic structure of exfoliated and epitaxial hexagonal boron nitride. United States.
Koch, Roland J., Katoch, Jyoti, Moser, Simon, Schwarz, Daniel, Kawakami, Roland K., Bostwick, Aaron, Rotenberg, Eli, Jozwiak, Chris, and Ulstrup, Søren. Fri . "Electronic structure of exfoliated and epitaxial hexagonal boron nitride". United States.
title = {Electronic structure of exfoliated and epitaxial hexagonal boron nitride},
author = {Koch, Roland J. and Katoch, Jyoti and Moser, Simon and Schwarz, Daniel and Kawakami, Roland K. and Bostwick, Aaron and Rotenberg, Eli and Jozwiak, Chris and Ulstrup, Søren},
abstractNote = {},
doi = {10.1103/PhysRevMaterials.2.074006},
journal = {Physical Review Materials},
number = 7,
volume = 2,
place = {United States},
year = {2018},
month = {7}

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Works referenced in this record:

Stability of boron nitride bilayers: Ground-state energies, interlayer distances, and tight-binding description
journal, June 2011

Micrometer-scale band mapping of single silver islands in real and reciprocal space
journal, March 2009

Efficient gating of epitaxial boron nitride monolayers by substrate functionalization
journal, September 2015

Growth and low-energy electron microscopy characterizations of graphene and hexagonal boron nitride
journal, June 2016

Epitaxial growth of single-domain graphene on hexagonal boron nitride
journal, July 2013

  • Yang, Wei; Chen, Guorui; Shi, Zhiwen
  • Nature Materials, Vol. 12, Issue 9
  • DOI: 10.1038/nmat3695

First-principles study of two- and one-dimensional honeycomb structures of boron nitride
journal, March 2009

A Platform for Large-Scale Graphene Electronics - CVD Growth of Single-Layer Graphene on CVD-Grown Hexagonal Boron Nitride
journal, April 2013

An experimentalist's guide to the matrix element in angle resolved photoemission
journal, January 2017

Spin and valley quantum Hall ferromagnetism in graphene
journal, May 2012

  • Young, A. F.; Dean, C. R.; Wang, L.
  • Nature Physics, Vol. 8, Issue 7
  • DOI: 10.1038/nphys2307

Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures
journal, September 2014

Van der Waals Epitaxy of Two-Dimensional MoS 2 –Graphene Heterostructures in Ultrahigh Vacuum
journal, May 2015

Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene Layer on a Wide-Band Gap Semiconductor
journal, May 2015

  • Shin, Ha-Chul; Jang, Yamujin; Kim, Tae-Hoon
  • Journal of the American Chemical Society, Vol. 137, Issue 21
  • DOI: 10.1021/jacs.5b03151

Atomically precise semiconductor—graphene and hBN interfaces by Ge intercalation
journal, December 2015

  • Verbitskiy, N. I.; Fedorov, A. V.; Profeta, G.
  • Scientific Reports, Vol. 5, Issue 1
  • DOI: 10.1038/srep17700

Graphene Field-Effect Transistors Based on Boron–Nitride Dielectrics
journal, July 2013

Structure of chemically derived mono- and few-atomic-layer boron nitride sheets
journal, December 2008

  • Han, Wei-Qiang; Wu, Lijun; Zhu, Yimei
  • Applied Physics Letters, Vol. 93, Issue 22
  • DOI: 10.1063/1.3041639

Huge Excitonic Effects in Layered Hexagonal Boron Nitride
journal, January 2006

Boron nitride substrates for high-quality graphene electronics
journal, August 2010

  • Dean, C. R.; Young, A. F.; Meric, I.
  • Nature Nanotechnology, Vol. 5, Issue 10, p. 722-726
  • DOI: 10.1038/nnano.2010.172

Interlayer Interaction and Electronic Screening in Multilayer Graphene Investigated with Angle-Resolved Photoemission Spectroscopy
journal, May 2007

Heteroepitaxial graphite on 6 H SiC ( 0001 ) :  Interface formation through conduction-band electronic structure
journal, December 1998

A simple energy filter for low energy electron microscopy/photoelectron emission microscopy instruments
journal, July 2009

Hexagonal boron nitride is an indirect bandgap semiconductor
journal, January 2016

Electronic states of the heteroepitaxial double-layer system: Graphite/monolayer hexagonal boron nitride/Ni(111)
journal, November 1996

Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal
journal, May 2004

  • Watanabe, Kenji; Taniguchi, Takashi; Kanda, Hisao
  • Nature Materials, Vol. 3, Issue 6
  • DOI: 10.1038/nmat1134

Quasifreestanding single-layer hexagonal boron nitride as a substrate for graphene synthesis
journal, August 2010

Automated preparation of high-quality epitaxial graphene on 6H-SiC(0001)
journal, September 2010

  • Ostler, Markus; Speck, Florian; Gick, Markus
  • physica status solidi (b), Vol. 247, Issue 11-12
  • DOI: 10.1002/pssb.201000220

Intrinsic and extrinsic performance limits of graphene devices on SiO2
journal, March 2008

  • Chen, Jian-Hao; Jang, Chaun; Xiao, Shudong
  • Nature Nanotechnology, Vol. 3, Issue 4, p. 206-209
  • DOI: 10.1038/nnano.2008.58

Spatially Resolved Electronic Properties of Single-Layer WS 2 on Transition Metal Oxides
journal, October 2016

Hofstadter’s butterfly and the fractal quantum Hall effect in moiré superlattices
journal, May 2013

Gaps induced by inversion symmetry breaking and second-generation Dirac cones in graphene/hexagonal boron nitride
journal, August 2016

  • Wang, Eryin; Lu, Xiaobo; Ding, Shijie
  • Nature Physics, Vol. 12, Issue 12
  • DOI: 10.1038/nphys3856

Chemical Vapor Deposition and Characterization of Aligned and Incommensurate Graphene/Hexagonal Boron Nitride Heterostack on Cu(111)
journal, May 2013

  • Roth, Silvan; Matsui, Fumihiko; Greber, Thomas
  • Nano Letters, Vol. 13, Issue 6
  • DOI: 10.1021/nl400815w

Van der Waals heterostructures
journal, July 2013

  • Geim, A. K.; Grigorieva, I. V.
  • Nature, Vol. 499, Issue 7459, p. 419-425
  • DOI: 10.1038/nature12385

Quantum emission from hexagonal boron nitride monolayers
journal, October 2015

  • Tran, Toan Trong; Bray, Kerem; Ford, Michael J.
  • Nature Nanotechnology, Vol. 11, Issue 1
  • DOI: 10.1038/nnano.2015.242

Electrical properties and applications of graphene, hexagonal boron nitride (h-BN), and graphene/h-BN heterostructures
journal, September 2017

Strong Coulomb drag and broken symmetry in double-layer graphene
journal, October 2012

  • Gorbachev, R. V.; Geim, A. K.; Katsnelson, M. I.
  • Nature Physics, Vol. 8, Issue 12
  • DOI: 10.1038/nphys2441

Growth of hexagonal boron nitride on (111) Si for deep UV photonics and thermal neutron detection
journal, September 2016

  • Ahmed, K.; Dahal, R.; Weltz, A.
  • Applied Physics Letters, Vol. 109, Issue 11
  • DOI: 10.1063/1.4962831

Frictional Characteristics of Atomically Thin Sheets
journal, April 2010

Two-dimensional atomic crystals
journal, July 2005

  • Novoselov, K. S.; Jiang, D.; Schedin, F.
  • Proceedings of the National Academy of Sciences, Vol. 102, Issue 30, p. 10451-10453
  • DOI: 10.1073/pnas.0502848102

Direct observation of the band structure in bulk hexagonal boron nitride
journal, February 2017

Stacking and Registry Effects in Layered Materials: The Case of Hexagonal Boron Nitride
journal, July 2010

Giant spin-splitting and gap renormalization driven by trions in single-layer WS2/h-BN heterostructures
journal, January 2018

Hexagonal boron nitride and 6H-SiC heterostructures
journal, May 2013

  • Majety, S.; Li, J.; Zhao, W. P.
  • Applied Physics Letters, Vol. 102, Issue 21
  • DOI: 10.1063/1.4808365

Extended van Hove Singularity and Superconducting Instability in Doped Graphene
journal, April 2010

Excitons in van der Waals heterostructures: The important role of dielectric screening
journal, December 2015

Quasiparticle band structure of bulk hexagonal boron nitride and related systems
journal, March 1995

Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers
journal, August 2010

  • Song, Li; Ci, Lijie; Lu, Hao
  • Nano Letters, Vol. 10, Issue 8, p. 3209-3215
  • DOI: 10.1021/nl1022139

Stacking in Bulk and Bilayer Hexagonal Boron Nitride
journal, July 2013

Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
journal, February 2009

  • Emtsev, Konstantin V.; Bostwick, Aaron; Horn, Karsten
  • Nature Materials, Vol. 8, Issue 3
  • DOI: 10.1038/nmat2382

Epitaxial Growth of Hexagonal Boron Nitride on Ir(111)
journal, December 2011

  • Orlando, Fabrizio; Larciprete, Rosanna; Lacovig, Paolo
  • The Journal of Physical Chemistry C, Vol. 116, Issue 1
  • DOI: 10.1021/jp207571n

Hexagonal Boron Nitride-Graphene Heterostructures: Synthesis and Interfacial Properties
journal, October 2015