The impact of incorporating shell-corrections to energy loss in silicon

doi:10.1016/j.nima.2018.04.061

Title: The impact of incorporating shell-corrections to energy loss in silicon

Abstract

Modern silicon tracking detectors based on hybrid or fully integrated CMOS technology are continuing to push to thinner sensors. The ionization energy loss fluctuations in very thin silicon sensors significantly deviates from the Landau distribution. Therefore, we have developed a charge deposition setup that implements the Bichsel straggling function, which accounts for shell-effects. This enhanced simulation is important for comparing with testbeam or collision data with thin sensors as demonstrated by reproducing more realistically the degraded position resolution compared with naïve ionization models based on simple Landau-like fluctuation. Our implementation of the Bichsel model agrees well with the multipurpose photo absorption ionization (PAI) model in Geant4 and is significantly faster. The code is made publicly available as part of the Allpix software package in order to facilitate predictions for new detector designs and comparisons with testbeam data.

Authors:

Wang, Fuyue ^[1]; Dong, Su ^[2]; Nachman, Benjamin ^[3]; Garcia-Sciveres, Maurice ^[3]; Zeng, Qi ^[2]

Tsinghua Univ., Beijing (China). Key Lab. of Particle and Radiation Imaging and Dept. of Engineering Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Physics Division
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Physics Division

Publication Date:: 2018-05-21

Research Org.:: SLAC National Accelerator Lab., Menlo Park, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Org.:: USDOE Office of Science (SC); China Scholarship Council (CSC)

OSTI Identifier:: 1461879

Alternate Identifier(s):: OSTI ID: 1582955

Grant/Contract Number:: AC02-76SF00515; AC02-05CH11231; 201606210194

Resource Type:: Accepted Manuscript

Journal Name:: Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment

Additional Journal Information:: Journal Volume: 899; Journal Issue: C; Journal ID: ISSN 0168-9002

Publisher:: Elsevier

Country of Publication:: United States

Language:: English

Subject:: 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 97 MATHEMATICS AND COMPUTING; Thin silicon detector; Bichsel model; Simulation

Citation Formats


                    Wang, Fuyue, Dong, Su, Nachman, Benjamin, Garcia-Sciveres, Maurice, and Zeng, Qi. The impact of incorporating shell-corrections to energy loss in silicon.  United States: N. p., 2018. 
        Web.  doi:10.1016/j.nima.2018.04.061.

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                    Wang, Fuyue, Dong, Su, Nachman, Benjamin, Garcia-Sciveres, Maurice, & Zeng, Qi. The impact of incorporating shell-corrections to energy loss in silicon.  United States.  doi:https://doi.org/10.1016/j.nima.2018.04.061

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                    Wang, Fuyue, Dong, Su, Nachman, Benjamin, Garcia-Sciveres, Maurice, and Zeng, Qi. Mon .  
        "The impact of incorporating shell-corrections to energy loss in silicon".  United States.  doi:https://doi.org/10.1016/j.nima.2018.04.061.  https://www.osti.gov/servlets/purl/1461879.

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@article{osti_1461879,

  title        = {The impact of incorporating shell-corrections to energy loss in silicon},

  author       = {Wang, Fuyue and Dong, Su and Nachman, Benjamin and Garcia-Sciveres, Maurice and Zeng, Qi},

  abstractNote = {Modern silicon tracking detectors based on hybrid or fully integrated CMOS technology are continuing to push to thinner sensors. The ionization energy loss fluctuations in very thin silicon sensors significantly deviates from the Landau distribution. Therefore, we have developed a charge deposition setup that implements the Bichsel straggling function, which accounts for shell-effects. This enhanced simulation is important for comparing with testbeam or collision data with thin sensors as demonstrated by reproducing more realistically the degraded position resolution compared with naïve ionization models based on simple Landau-like fluctuation. Our implementation of the Bichsel model agrees well with the multipurpose photo absorption ionization (PAI) model in Geant4 and is significantly faster. The code is made publicly available as part of the Allpix software package in order to facilitate predictions for new detector designs and comparisons with testbeam data.},

  doi          = {10.1016/j.nima.2018.04.061},

  journal      = {Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment},

  number       = C,

  volume       = 899,

  place        = {United States},

  year         = {2018},

  month        = {5}

}

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DOI: https://doi.org/10.1016/j.nima.2018.04.061

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Figures / Tables:

Figure 1: Schematic diagrams of the energy deposition inside a pixel module using the EMstandard (left) and the Bichsel model (right).

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