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Title: Delayed Onset of Nonthermal Melting in Single-Crystal Silicon Pumped with Hard X Rays

Abstract

Here, we monitor the onset of nonthermal melting in single-crystal silicon by implementing an x-ray pump–x-ray probe scheme. Using the ultrashort pulses provided by the Linac Coherent Light Source (SLAC) and a custom-built split-and-delay line for hard x rays, we achieve the temporal resolution needed to detect the onset of the transition. Our data show no loss of long-range order up to 150 ± 40 fs from photoabsorption, which we interpret as the time needed for the electronic system to equilibrate at or above the critical nonthermal melting temperature. Once such equilibration is reached, the loss of long-range atomic order proceeds inertially and is completed within 315 ± 40 fs from photoabsorption.

Authors:
 [1];  [1];  [2];  [2];  [1];  [3];  [2];  [1];  [2];  [1];  [2];  [1];  [1];  [4];  [1];  [1]
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  2. SLAC National Accelerator Lab., Menlo Park, CA (United States)
  3. SLAC National Accelerator Lab., Menlo Park, CA (United States); Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  4. Univ. of Duisburg-Essen, Duisburg (Germany). Faculty of Physics and Center for Nanointegration Duisburg-Essen (CENIDE)
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States); Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); USDOE Laboratory Directed Research and Development (LDRD) Program; German Research Foundation (DFG)
OSTI Identifier:
1461829
Alternate Identifier(s):
OSTI ID: 1457098; OSTI ID: 1475357; OSTI ID: 1526857; OSTI ID: 1529827
Report Number(s):
LLNL-JRNL-740585; LA-UR-17-29806; LLNL-JRNL-739162
Journal ID: ISSN 0031-9007; PRLTAO; TRN: US1902054
Grant/Contract Number:  
AC52-07NA27344; AC52-06NA25396; AC02-76SF00515
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 120; Journal Issue: 26; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 47 OTHER INSTRUMENTATION; crystal melting; phase transitions; ultrafast pump-probe spectroscopy

Citation Formats

Pardini, T., Alameda, J., Aquila, A., Boutet, S., Decker, T., Gleason, A. E., Guillet, S., Hamilton, P., Hayes, M., Hill, R., Koglin, J., Kozioziemski, B., Robinson, J., Sokolowski-Tinten, K., Soufli, R., and Hau-Riege, S. P. Delayed Onset of Nonthermal Melting in Single-Crystal Silicon Pumped with Hard X Rays. United States: N. p., 2018. Web. doi:10.1103/physrevlett.120.265701.
Pardini, T., Alameda, J., Aquila, A., Boutet, S., Decker, T., Gleason, A. E., Guillet, S., Hamilton, P., Hayes, M., Hill, R., Koglin, J., Kozioziemski, B., Robinson, J., Sokolowski-Tinten, K., Soufli, R., & Hau-Riege, S. P. Delayed Onset of Nonthermal Melting in Single-Crystal Silicon Pumped with Hard X Rays. United States. doi:10.1103/physrevlett.120.265701.
Pardini, T., Alameda, J., Aquila, A., Boutet, S., Decker, T., Gleason, A. E., Guillet, S., Hamilton, P., Hayes, M., Hill, R., Koglin, J., Kozioziemski, B., Robinson, J., Sokolowski-Tinten, K., Soufli, R., and Hau-Riege, S. P. Mon . "Delayed Onset of Nonthermal Melting in Single-Crystal Silicon Pumped with Hard X Rays". United States. doi:10.1103/physrevlett.120.265701. https://www.osti.gov/servlets/purl/1461829.
@article{osti_1461829,
title = {Delayed Onset of Nonthermal Melting in Single-Crystal Silicon Pumped with Hard X Rays},
author = {Pardini, T. and Alameda, J. and Aquila, A. and Boutet, S. and Decker, T. and Gleason, A. E. and Guillet, S. and Hamilton, P. and Hayes, M. and Hill, R. and Koglin, J. and Kozioziemski, B. and Robinson, J. and Sokolowski-Tinten, K. and Soufli, R. and Hau-Riege, S. P.},
abstractNote = {Here, we monitor the onset of nonthermal melting in single-crystal silicon by implementing an x-ray pump–x-ray probe scheme. Using the ultrashort pulses provided by the Linac Coherent Light Source (SLAC) and a custom-built split-and-delay line for hard x rays, we achieve the temporal resolution needed to detect the onset of the transition. Our data show no loss of long-range order up to 150 ± 40 fs from photoabsorption, which we interpret as the time needed for the electronic system to equilibrate at or above the critical nonthermal melting temperature. Once such equilibration is reached, the loss of long-range atomic order proceeds inertially and is completed within 315 ± 40 fs from photoabsorption.},
doi = {10.1103/physrevlett.120.265701},
journal = {Physical Review Letters},
number = 26,
volume = 120,
place = {United States},
year = {2018},
month = {6}
}

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    Works referencing / citing this record:

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