Multimodal spectromicroscopy of monolayer WS 2 enabled by ultra-clean van der Waals epitaxy
Abstract
Van der Waals epitaxy enables the integration of 2D transition metal dichalcogenides with other layered materials to form heterostructures with atomically sharp interfaces. However, the ability to fully utilize and understand these materials using surface science techniques such as angle resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM) requires low defect, large area, epitaxial coverage with ultra-clean interfaces. We have developed a chemical vapor deposition van der Waals epitaxy growth process where the metal and chalcogen sources are separated such that growth times can be extended significantly to yield high coverage while minimizing surface contamination. We also demonstrate the growth of high quality 2D WS2 over large areas on graphene. The as-grown vertical heterostructures are exceptionally clean as demonstrated by ARPES, STM and spatially resolved photoluminescence mapping. With these correlated techniques we are able to relate defect density to electronic band structure and, ultimately, optical properties. We find that our synthetic approach provides ultra-clean, low defect density (~1012 cm-2), ~10 μm large WS2 monolayer crystals, with an electronic band structure and valence band effective masses that perfectly match the theoretical prediction for pristine WS2.
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division; Swiss National Science Foundation (SNSF)
- OSTI Identifier:
- 1461592
- Alternate Identifier(s):
- OSTI ID: 1465470
- Grant/Contract Number:
- AC02-05CH11231; P2SKP2_171770
- Resource Type:
- Published Article
- Journal Name:
- 2D Materials
- Additional Journal Information:
- Journal Name: 2D Materials Journal Volume: 5 Journal Issue: 4; Journal ID: ISSN 2053-1583
- Publisher:
- IOP Publishing
- Country of Publication:
- United Kingdom
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; transition metal dichalcogenides; TMD; TMDC; chemical vapor deposition; effective mass; exciton
Citation Formats
Kastl, C., Chen, C. T., Koch, R. J., Schuler, B., Kuykendall, T. R., Bostwick, A., Jozwiak, C., Seyller, T., Rotenberg, E., Weber-Bargioni, A., Aloni, S., and Schwartzberg, A. M. Multimodal spectromicroscopy of monolayer WS 2 enabled by ultra-clean van der Waals epitaxy. United Kingdom: N. p., 2018.
Web. doi:10.1088/2053-1583/aad21c.
Kastl, C., Chen, C. T., Koch, R. J., Schuler, B., Kuykendall, T. R., Bostwick, A., Jozwiak, C., Seyller, T., Rotenberg, E., Weber-Bargioni, A., Aloni, S., & Schwartzberg, A. M. Multimodal spectromicroscopy of monolayer WS 2 enabled by ultra-clean van der Waals epitaxy. United Kingdom. https://doi.org/10.1088/2053-1583/aad21c
Kastl, C., Chen, C. T., Koch, R. J., Schuler, B., Kuykendall, T. R., Bostwick, A., Jozwiak, C., Seyller, T., Rotenberg, E., Weber-Bargioni, A., Aloni, S., and Schwartzberg, A. M. Wed .
"Multimodal spectromicroscopy of monolayer WS 2 enabled by ultra-clean van der Waals epitaxy". United Kingdom. https://doi.org/10.1088/2053-1583/aad21c.
@article{osti_1461592,
title = {Multimodal spectromicroscopy of monolayer WS 2 enabled by ultra-clean van der Waals epitaxy},
author = {Kastl, C. and Chen, C. T. and Koch, R. J. and Schuler, B. and Kuykendall, T. R. and Bostwick, A. and Jozwiak, C. and Seyller, T. and Rotenberg, E. and Weber-Bargioni, A. and Aloni, S. and Schwartzberg, A. M.},
abstractNote = {Van der Waals epitaxy enables the integration of 2D transition metal dichalcogenides with other layered materials to form heterostructures with atomically sharp interfaces. However, the ability to fully utilize and understand these materials using surface science techniques such as angle resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM) requires low defect, large area, epitaxial coverage with ultra-clean interfaces. We have developed a chemical vapor deposition van der Waals epitaxy growth process where the metal and chalcogen sources are separated such that growth times can be extended significantly to yield high coverage while minimizing surface contamination. We also demonstrate the growth of high quality 2D WS2 over large areas on graphene. The as-grown vertical heterostructures are exceptionally clean as demonstrated by ARPES, STM and spatially resolved photoluminescence mapping. With these correlated techniques we are able to relate defect density to electronic band structure and, ultimately, optical properties. We find that our synthetic approach provides ultra-clean, low defect density (~1012 cm-2), ~10 μm large WS2 monolayer crystals, with an electronic band structure and valence band effective masses that perfectly match the theoretical prediction for pristine WS2.},
doi = {10.1088/2053-1583/aad21c},
journal = {2D Materials},
number = 4,
volume = 5,
place = {United Kingdom},
year = {Wed Jul 25 00:00:00 EDT 2018},
month = {Wed Jul 25 00:00:00 EDT 2018}
}
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https://doi.org/10.1088/2053-1583/aad21c
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Cited by: 34 works
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