Superconductor–Insulator Transition in NbTiN Films

Journal Article · 28 February 2018 · JETP Letters

DOI: https://doi.org/10.1134/S0021364017230060 · OSTI ID:1461412

Burdastyh, M. V. ^[1]; Postolova, S. V. ^[1]; Baturina, T. I. ^[1]; Proslier, T. ^[2]; Vinokur, V. M. ^[3]; Mironov, A. Yu. ^[1]

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1. Russian Academy of Sciences, Novosibirsk (Russia); Novosibirsk State Univ., Novosibirsk (Russia)
2. Institut de recherches sur les lois fundamentales de l’univers, Gif-sur-Yvette (France); Argonne National Lab. (ANL), Argonne, IL (United States)
3. Argonne National Lab. (ANL), Argonne, IL (United States); Univ. of Chicago, Chicago, IL (United States)

Experimental results indicating a direct disorder-induced superconductor-insulator transition in NbTiN thin films have been reported. It has been shown that an increase in the resistance per square in the normal state is accompanied by the suppression of the critical temperature of the superconducting transition T_c according to the fermion mechanism of suppression of superconductivity by disorder. At the same time, the temperature of the Berezinskii-Kosterlitz-Thouless transition is completely suppressed at a nonzero critical temperature and, then, the ground state changes to insulating, which is characteristic of the boson model of suppression of superconductivity by disorder. Furthermore it has been shown that the temperature dependences of the resistance of insulating films follow the Arrhenius activation law.

• Research Organization: Argonne National Lab. (ANL), Argonne, IL (United States)
• Sponsoring Organization: Russian Science Foundation; USDOE
• Grant/Contract Number: AC02-06CH11357
• OSTI ID: 1461412
• Journal Information: JETP Letters, Journal Name: JETP Letters Journal Issue: 11 Vol. 106; ISSN 0021-3640
• Publisher: Pleiades Publishing - Springer NatureCopyright Statement
• Country of Publication: United States
• Language: English