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Title: Overcoming diffusion-related limitations in semiconductor defect imaging with phonon-plasmon-coupled mode Raman scattering

Abstract

Carrier diffusion is of paramount importance in many semiconductor devices, such as solar cells, photodetectors, and power electronics. Structural defects prevent such devices from reaching their full performance potential. Although a large carrier diffusion length indicates high material quality, it also implies increased carrier depletion by an individual extended defect (for instance, a dislocation) and obscures the spatial resolution of neighboring defects using optical techniques. For commonly utilized photoluminescence (PL) imaging, the spatial resolution is dictated by the diffusion length rather than by the laser spot size, no matter the spot is at or below the diffraction limit. We show how Raman imaging of the LO phonon-plasmon-coupled mode can be used to recover the intrinsic spatial resolution of the optical system, and we demonstrate the effectiveness of the technique by imaging defects in GaAs with diffraction-limited optics, achieving a 10-fold improvement in resolution. Furthermore, by combining Raman and PL imaging, we can independently and simultaneously determine the spatial dependence of the electron density, hole density, radiative recombination rate, and non-radiative recombination rate near a dislocation-like defect, which has not been possible using other techniques.

Authors:
 [1];  [2];  [1];  [3];  [4]; ORCiD logo [2]
  1. Univ. of North Carolina, Charlotte, NC (United States); Wuhan Univ. of Technology (China)
  2. Univ. of North Carolina, Charlotte, NC (United States)
  3. Davidson College, Davidson, NC (United States)
  4. National Renewable Energy Lab. (NREL), Golden, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE); US Army Research Office (ARO); National Natural Science Foundation of China (NNSFC); China Scholarship Council (CSC)
OSTI Identifier:
1461373
Report Number(s):
NREL/JA-5K00-71975
Journal ID: ISSN 2047-7538
Grant/Contract Number:  
AC36-08GO28308; W911NF-10-1-0524; W911NF-16-1-0263; 51702245
Resource Type:
Accepted Manuscript
Journal Name:
Light, Science & Applications
Additional Journal Information:
Journal Volume: 7; Journal Issue: 1; Journal ID: ISSN 2047-7538
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; diffraction; diffusion; gallium arsenide; III-V semiconductors; image resolution; optical systems; phonons; plasmons; semiconductor devices

Citation Formats

Hu, Changkui, Chen, Qiong, Chen, Fengxiang, Gfroerer, T. H., Wanlass, Mark W., and Zhang, Yong. Overcoming diffusion-related limitations in semiconductor defect imaging with phonon-plasmon-coupled mode Raman scattering. United States: N. p., 2018. Web. doi:10.1038/s41377-018-0016-y.
Hu, Changkui, Chen, Qiong, Chen, Fengxiang, Gfroerer, T. H., Wanlass, Mark W., & Zhang, Yong. Overcoming diffusion-related limitations in semiconductor defect imaging with phonon-plasmon-coupled mode Raman scattering. United States. doi:10.1038/s41377-018-0016-y.
Hu, Changkui, Chen, Qiong, Chen, Fengxiang, Gfroerer, T. H., Wanlass, Mark W., and Zhang, Yong. Wed . "Overcoming diffusion-related limitations in semiconductor defect imaging with phonon-plasmon-coupled mode Raman scattering". United States. doi:10.1038/s41377-018-0016-y. https://www.osti.gov/servlets/purl/1461373.
@article{osti_1461373,
title = {Overcoming diffusion-related limitations in semiconductor defect imaging with phonon-plasmon-coupled mode Raman scattering},
author = {Hu, Changkui and Chen, Qiong and Chen, Fengxiang and Gfroerer, T. H. and Wanlass, Mark W. and Zhang, Yong},
abstractNote = {Carrier diffusion is of paramount importance in many semiconductor devices, such as solar cells, photodetectors, and power electronics. Structural defects prevent such devices from reaching their full performance potential. Although a large carrier diffusion length indicates high material quality, it also implies increased carrier depletion by an individual extended defect (for instance, a dislocation) and obscures the spatial resolution of neighboring defects using optical techniques. For commonly utilized photoluminescence (PL) imaging, the spatial resolution is dictated by the diffusion length rather than by the laser spot size, no matter the spot is at or below the diffraction limit. We show how Raman imaging of the LO phonon-plasmon-coupled mode can be used to recover the intrinsic spatial resolution of the optical system, and we demonstrate the effectiveness of the technique by imaging defects in GaAs with diffraction-limited optics, achieving a 10-fold improvement in resolution. Furthermore, by combining Raman and PL imaging, we can independently and simultaneously determine the spatial dependence of the electron density, hole density, radiative recombination rate, and non-radiative recombination rate near a dislocation-like defect, which has not been possible using other techniques.},
doi = {10.1038/s41377-018-0016-y},
journal = {Light, Science & Applications},
number = 1,
volume = 7,
place = {United States},
year = {2018},
month = {6}
}

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Works referenced in this record:

Observation of the Interaction of Plasmons with Longitudinal Optical Phonons in GaAs
journal, May 1966


Polarization and Intensity of Raman Scattering from Plasmons and Phonons in Gallium Arsenide
journal, October 1967


Raman spectroscopy of macroscopic defects of GaAs grown by molecular beam epitaxy
journal, June 1993

  • Jang, H. S.; Cho, H. Y.; Lee, S. W.
  • Applied Physics A Solids and Surfaces, Vol. 56, Issue 6
  • DOI: 10.1007/BF00331407

Photo-excited hot carrier dynamics in hydrogenated amorphous silicon imaged by 4D electron microscopy
journal, July 2017


Confocal Micro-PL Mapping of Defects in CdTe Epilayers Grown on Si (211) Substrates with Different Annealing Cycles
journal, April 2014


Measuring long-range carrier diffusion across multiple grains in polycrystalline semiconductors by photoluminescence imaging
journal, October 2013

  • Alberi, K.; Fluegel, B.; Moutinho, H.
  • Nature Communications, Vol. 4, Issue 1
  • DOI: 10.1038/ncomms3699

Carrier Decay and Diffusion Dynamics in Single-Crystalline CdTe as Seen via Microphotoluminescence
journal, September 2014


Effects of dislocations on photoluminescent properties in liquid phase epitaxial GaP
journal, April 1975

  • Suzuki, Tohru; Matsumoto, Yoshishige
  • Applied Physics Letters, Vol. 26, Issue 8
  • DOI: 10.1063/1.88226

Modeling the effect of dislocations on the minority carrier diffusion length of a semiconductor
journal, September 1998

  • Donolato, C.
  • Journal of Applied Physics, Vol. 84, Issue 5
  • DOI: 10.1063/1.368378

Proposed method for molecular optical imaging
journal, January 1995


Stable Solid-State Source of Single Photons
journal, July 2000


Investigation of semiconductors with defects using Raman scattering
journal, March 2004


Plasmonic all-optical tunable wavelength shifter
journal, November 2007


The temperature dependence of the LO(T) and TO(T) phonons in GaAs and InP
journal, May 1996


Time-resolved correlative optical microscopy of charge-carrier transport, recombination, and space-charge fields in CdTe heterostructures
journal, February 2017

  • Kuciauskas, Darius; Myers, Thomas H.; Barnes, Teresa M.
  • Applied Physics Letters, Vol. 110, Issue 8
  • DOI: 10.1063/1.4976696

Collective Modes of Photoexcited Electron-Hole Plasmas in GaAs
journal, November 1981


GaAs micrometer‐sized dot imaging by Raman microscopy
journal, November 1993

  • Wang, P. D.; Cheng, C.; Torres, C. M. Sotomayor
  • Journal of Applied Physics, Vol. 74, Issue 9
  • DOI: 10.1063/1.354170

Distortion and Segregation in a Dislocation Core Region at Atomic Resolution
journal, September 2005


Methods of single-molecule fluorescence spectroscopy and microscopy
journal, August 2003

  • Moerner, W. E.; Fromm, David P.
  • Review of Scientific Instruments, Vol. 74, Issue 8
  • DOI: 10.1063/1.1589587

Optical Spectroscopy of Single Impurity Centers in Semiconductors
journal, August 2004


Charge-carrier transport and recombination in heteroepitaxial CdTe
journal, September 2014

  • Kuciauskas, Darius; Farrell, Stuart; Dippo, Pat
  • Journal of Applied Physics, Vol. 116, Issue 12
  • DOI: 10.1063/1.4896673

Breaking the Diffraction Barrier in Fluorescence Microscopy by Optical Shelving
journal, May 2007


Revealing Optical Properties of Reduced-Dimensionality Materials at Relevant Length Scales
journal, August 2015

  • Ogletree, D. Frank; Schuck, P. James; Weber-Bargioni, Alexander F.
  • Advanced Materials, Vol. 27, Issue 38
  • DOI: 10.1002/adma.201500930

An extended defect as a sensor for free carrier diffusion in a semiconductor
journal, January 2013

  • Gfroerer, T. H.; Zhang, Yong; Wanlass, M. W.
  • Applied Physics Letters, Vol. 102, Issue 1
  • DOI: 10.1063/1.4775369

Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: Polarization dependence, selection rules, and strain effects
journal, December 2009


Spatial resolution versus data acquisition efficiency in mapping an inhomogeneous system with species diffusion
journal, June 2015

  • Chen, Fengxiang; Zhang, Yong; Gfroerer, T. H.
  • Scientific Reports, Vol. 5, Issue 1
  • DOI: 10.1038/srep10542

    Works referencing / citing this record:

    Broadband transmission Raman measurements using a field-widened spatial heterodyne Raman spectrometer with mosaic grating structure
    journal, January 2018


    Broadband, high-resolution Raman observations from a double-echelle spatial heterodyne Raman spectrometer
    journal, January 2018