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Title: Ultrasensitive tunability of the direct bandgap of 2D [Twp-dimensional] InSe flakes via strain engineering

Abstract

InSe, a member of the layered materials family, is a superior electronic and optical material which retains a direct bandgap feature from the bulk to atomically thin few-layers and high electronic mobility down to a single layer limit. We, for the first time, exploit strain to drastically modify the bandgap of two-dimensional (2D) InSe nanoflakes. We demonstrated that we could decrease the bandgap of a few-layer InSe flake by 160 meV through applying an in-plane uniaxial tensile strain to 1.06% and increase the bandgap by 79 meV through applying an in-plane uniaxial compressive strain to 0.62%, as evidenced by photoluminescence (PL) spectroscopy. The large reversible bandgap change of ~239 meV arises from a large bandgap change rate (bandgap strain coefficient) of few-layer InSe in response to strain, ~154 meV/% for uniaxial tensile strain and ~140 meV/% for uniaxial compressive strain, representing the most pronounced uniaxial strain-induced bandgap strain coefficient experimentally reported in 2D materials. We developed a theoretical understanding of the strain-induced bandgap change through first-principles DFT and GW calculations. We also confirmed the bandgap change by photoconductivity measurements using excitation light with different photon energies. In conclusion, the highly tunable bandgap of InSe in the infrared regime should enablemore » a wide range of applications, including electro-mechanical, piezoelectric and optoelectronic devices.« less

Authors:
 [1];  [1];  [2];  [2];  [1]; ORCiD logo [3];  [3];  [3];  [4]; ORCiD logo [5];  [2]; ORCiD logo [6]
  1. Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Chemical and Biological Engineering
  2. Univ. of California, Berkeley, CA (United States). Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
  3. Academia Sinica, Taipei (Taiwan). Inst. of Physics; National Taiwan Univ., Taipei (Taiwan). Center for Condensed Matter Science
  4. Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Physics and Astronomy
  5. Harbin Inst. of Technology (China). School of Materials Science and Engineering
  6. Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Chemical and Biological Engineering; Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Electrical, Computer and System Engineering
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1461129
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
2D Materials
Additional Journal Information:
Journal Volume: 5; Journal Issue: 2; Journal ID: ISSN 2053-1583
Publisher:
IOP Publishing
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 2D materials; flexible optoelectronics; strain; band structure engineering; InSe

Citation Formats

Li, Yang, Wang, Tianmeng, Wu, Meng, Cao, Ting, Chen, Yanwen, Sankar, Raman, Ulaganathan, Rajesh K., Chou, Fangcheng, Wetzel, Christian, Xu, Cheng-Yan, Louie, Steven G., and Shi, Su-Fei. Ultrasensitive tunability of the direct bandgap of 2D [Twp-dimensional] InSe flakes via strain engineering. United States: N. p., 2018. Web. https://doi.org/10.1088/2053-1583/aaa6eb.
Li, Yang, Wang, Tianmeng, Wu, Meng, Cao, Ting, Chen, Yanwen, Sankar, Raman, Ulaganathan, Rajesh K., Chou, Fangcheng, Wetzel, Christian, Xu, Cheng-Yan, Louie, Steven G., & Shi, Su-Fei. Ultrasensitive tunability of the direct bandgap of 2D [Twp-dimensional] InSe flakes via strain engineering. United States. https://doi.org/10.1088/2053-1583/aaa6eb
Li, Yang, Wang, Tianmeng, Wu, Meng, Cao, Ting, Chen, Yanwen, Sankar, Raman, Ulaganathan, Rajesh K., Chou, Fangcheng, Wetzel, Christian, Xu, Cheng-Yan, Louie, Steven G., and Shi, Su-Fei. Mon . "Ultrasensitive tunability of the direct bandgap of 2D [Twp-dimensional] InSe flakes via strain engineering". United States. https://doi.org/10.1088/2053-1583/aaa6eb. https://www.osti.gov/servlets/purl/1461129.
@article{osti_1461129,
title = {Ultrasensitive tunability of the direct bandgap of 2D [Twp-dimensional] InSe flakes via strain engineering},
author = {Li, Yang and Wang, Tianmeng and Wu, Meng and Cao, Ting and Chen, Yanwen and Sankar, Raman and Ulaganathan, Rajesh K. and Chou, Fangcheng and Wetzel, Christian and Xu, Cheng-Yan and Louie, Steven G. and Shi, Su-Fei},
abstractNote = {InSe, a member of the layered materials family, is a superior electronic and optical material which retains a direct bandgap feature from the bulk to atomically thin few-layers and high electronic mobility down to a single layer limit. We, for the first time, exploit strain to drastically modify the bandgap of two-dimensional (2D) InSe nanoflakes. We demonstrated that we could decrease the bandgap of a few-layer InSe flake by 160 meV through applying an in-plane uniaxial tensile strain to 1.06% and increase the bandgap by 79 meV through applying an in-plane uniaxial compressive strain to 0.62%, as evidenced by photoluminescence (PL) spectroscopy. The large reversible bandgap change of ~239 meV arises from a large bandgap change rate (bandgap strain coefficient) of few-layer InSe in response to strain, ~154 meV/% for uniaxial tensile strain and ~140 meV/% for uniaxial compressive strain, representing the most pronounced uniaxial strain-induced bandgap strain coefficient experimentally reported in 2D materials. We developed a theoretical understanding of the strain-induced bandgap change through first-principles DFT and GW calculations. We also confirmed the bandgap change by photoconductivity measurements using excitation light with different photon energies. In conclusion, the highly tunable bandgap of InSe in the infrared regime should enable a wide range of applications, including electro-mechanical, piezoelectric and optoelectronic devices.},
doi = {10.1088/2053-1583/aaa6eb},
journal = {2D Materials},
number = 2,
volume = 5,
place = {United States},
year = {2018},
month = {1}
}

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Cited by: 14 works
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Figures / Tables:

Figure 1 Figure 1: Strain-induced Raman mode shifts in few-layer InSe. (a) A side view of the atomic structure of the InSe crystal structure. In atom: purple. Se atom: green. (b) A top view of the InSe crystal structure showing a hexagonal structure with D3h symmetry. (c) A schematic of the two-pointmore » bending apparatus used for applying uniaxial tensile and compressive strain. (d) A schematic for the calculation of the strain in InSe flake. (e) Evolution of Raman spectra of an InSe flake of thickness ~ 8 nm with the tensile strain from 0 to 0.79%. The phonon vibration modes E, A1(LO) and A1 modes, are labeled. (f) The peak positions of E, A1(LO) and A1 Raman modes as a function of applied strain. Schematic representation of relative atomic motion of each Raman mode is also shown.« less

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      Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.