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Title: Use of the drift-time method to measure the electron lifetime in long-drift-length CdZnTe detectors

Abstract

The traditional method for electron lifetime measurements of CdZnTe (CZT) detectors relies on using the Hecht equation. The procedure involves measuring the dependence of the detector response on the applied bias to evaluate the μτ product, which in turn can be converted into the carrier lifetime. Despite general acceptance of this technique, which is very convenient for comparative testing of different CZT materials, the assumption of a constant electric field inside a detector is unjustified. In the Hecht equation, this assumption means that the drift time would be a linear function of the distance. This condition is not fulfilled in practice at low applied biases, where the Hecht equation is most sensitive to the μτ product. As a result, researchers usually take measurements at relatively high biases, which work well in the case of the low μτ-product material, <10-3 cm2/V, but give significantly underestimated values for the case of high μτ-product crystals. In this paper, we applied the drift-time method to measure the electron lifetimes in long-drift-length (4 cm) standard-grade CZT detectors produced by the Redlen Technologies. We found that the electron μτ product of tested crystals is in the range 0.1–0.2 cm2/V, which is an order of the magnitudemore » higher than any value previously reported for a CZT material. Finally, in comparison, using the Hecht equation fitting, we obtained μτ = 2.3 × 10-2 cm2/V for a 2-mm thin planar detector fabricated from the same CZT material.« less

Authors:
 [1];  [1];  [2];  [1];  [3];  [1];  [1];  [1];  [2];  [4];  [5];  [2];  [1];  [1]; ORCiD logo [2];  [6]
+ Show Author Affiliations
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Redlen Technologies, Saanichton, BC (Canada)
  3. Brookhaven National Lab. (BNL), Upton, NY (United States); Charles Univ., Prague (Czech Republic). Inst. of Physics
  4. Brookhaven National Lab. (BNL), Upton, NY (United States); Pennsylvania State Univ., University Park, PA (United States). Dept. of Mechanical and Nuclear Engineering
  5. Univ. of Surrey, Guildford (United Kingdom). Dept. of Physics
  6. Brookhaven National Lab. (BNL), Upton, NY (United States); Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL). Science and Technology Directorate
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA), Office of Defense Nuclear Nonproliferation
OSTI Identifier:
1460686
Report Number(s):
BNL-207826-2018-JAAM
Journal ID: ISSN 0021-8979; TRN: US1901896
Grant/Contract Number:  
SC0012704
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 120; Journal Issue: 10; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION; time measurement; electron mobility; position sensitive detectors; electrical sensors; anodes; cathodes; amplifiers; electric fields; electric measurements; ballistics

Citation Formats

Bolotnikov, A. E., Camarda, G. S., Chen, E., Gul, R., Dedic, V., De Geronimo, G., Fried, J., Hossain, A., MacKenzie, J. M., Ocampo, L., Sellin, P., Taherion, S., Vernon, E., Yang, G., El-Hanany, U., and James, R. B. Use of the drift-time method to measure the electron lifetime in long-drift-length CdZnTe detectors. United States: N. p., 2016. Web. doi:10.1063/1.4962540.
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Bolotnikov, A. E., Camarda, G. S., Chen, E., Gul, R., Dedic, V., De Geronimo, G., Fried, J., Hossain, A., MacKenzie, J. M., Ocampo, L., Sellin, P., Taherion, S., Vernon, E., Yang, G., El-Hanany, U., & James, R. B. Use of the drift-time method to measure the electron lifetime in long-drift-length CdZnTe detectors. United States. https://doi.org/10.1063/1.4962540
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Bolotnikov, A. E., Camarda, G. S., Chen, E., Gul, R., Dedic, V., De Geronimo, G., Fried, J., Hossain, A., MacKenzie, J. M., Ocampo, L., Sellin, P., Taherion, S., Vernon, E., Yang, G., El-Hanany, U., and James, R. B. Wed . "Use of the drift-time method to measure the electron lifetime in long-drift-length CdZnTe detectors". United States. https://doi.org/10.1063/1.4962540. https://www.osti.gov/servlets/purl/1460686.
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@article{osti_1460686,
title = {Use of the drift-time method to measure the electron lifetime in long-drift-length CdZnTe detectors},
author = {Bolotnikov, A. E. and Camarda, G. S. and Chen, E. and Gul, R. and Dedic, V. and De Geronimo, G. and Fried, J. and Hossain, A. and MacKenzie, J. M. and Ocampo, L. and Sellin, P. and Taherion, S. and Vernon, E. and Yang, G. and El-Hanany, U. and James, R. B.},
abstractNote = {The traditional method for electron lifetime measurements of CdZnTe (CZT) detectors relies on using the Hecht equation. The procedure involves measuring the dependence of the detector response on the applied bias to evaluate the μτ product, which in turn can be converted into the carrier lifetime. Despite general acceptance of this technique, which is very convenient for comparative testing of different CZT materials, the assumption of a constant electric field inside a detector is unjustified. In the Hecht equation, this assumption means that the drift time would be a linear function of the distance. This condition is not fulfilled in practice at low applied biases, where the Hecht equation is most sensitive to the μτ product. As a result, researchers usually take measurements at relatively high biases, which work well in the case of the low μτ-product material, <10-3 cm2/V, but give significantly underestimated values for the case of high μτ-product crystals. In this paper, we applied the drift-time method to measure the electron lifetimes in long-drift-length (4 cm) standard-grade CZT detectors produced by the Redlen Technologies. We found that the electron μτ product of tested crystals is in the range 0.1–0.2 cm2/V, which is an order of the magnitude higher than any value previously reported for a CZT material. Finally, in comparison, using the Hecht equation fitting, we obtained μτ = 2.3 × 10-2 cm2/V for a 2-mm thin planar detector fabricated from the same CZT material.},
doi = {10.1063/1.4962540},
journal = {Journal of Applied Physics},
number = 10,
volume = 120,
place = {United States},
year = {Wed Sep 14 00:00:00 EDT 2016},
month = {Wed Sep 14 00:00:00 EDT 2016}
}
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Publisher's Version of Record
https://doi.org/10.1063/1.4962540
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Works referenced in this record:

CdZnTe position-sensitive drift detectors with thicknesses up to 5 cm
journal, February 2016

  • Bolotnikov, A. E.; Camarda, G. S.; Chen, E.
  • Applied Physics Letters, Vol. 108, Issue 9
  • DOI: 10.1063/1.4943161

Purification techniques and purity and density measurements of high-pressure Xe
journal, December 1996

  • Bolotnikov, Aleksey; Ramsey, Brian
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 383, Issue 2-3
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Design, construction and tests of the ICARUS T600 detector
journal, July 2004

  • Amerio, S.; Amoruso, S.; Antonello, M.
  • Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 527, Issue 3
  • DOI: 10.1016/j.nima.2004.02.044

Zum Mechanismus des lichtelektrischen Prim�rstromes in isolierenden Kristallen
journal, March 1932

Performance studies of CdZnTe detector by using a pulse shape analysis
conference, August 2005

  • Bolotnikov, A. E.; Camarda, G. S.; Carini, G. A.
  • Optics & Photonics 2005, SPIE Proceedings
  • DOI: 10.1117/12.618355
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    Works referencing / citing this record:

    Overcoming Mobility Lifetime Product Limitations in Vertical Bridgman Production of Cadmium Zinc Telluride Detectors
    journal, April 2019

    • McCoy, Jedidiah J.; Kakkireni, Saketh; Gilvey, Zachary H.
    • Journal of Electronic Materials, Vol. 48, Issue 7
    • DOI: 10.1007/s11664-019-07196-5
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